公开(公告)号：US20200052687A1

公开(公告)日：2020-02-13

申请号：US16455803

申请日：2019-06-28

Applicant: University of Electronic Science and Technology of China

Inventor： Xin MING ,  Li HU ,  Xuan ZHANG ,  Su PAN ,  Chunqi ZHANG ,  Yao QIN ,  Zhiwen ZHANG ,  Yangli XIN ,  Zhuo WANG ,  Bo ZHANG

IPC: H03K17/06 ,  H03K17/16

Abstract: A switch bootstrap charging circuit suitable for a gate drive circuit of a GaN power device includes a high-voltage MOSFET, a low-voltage MOSFET, a high-voltage MOSFET control module, and a low-voltage MOSFET control module. The low-voltage MOSFET is a PMOS transistor, and the source of the low-voltage MOSFET is connected to the power supply voltage. The drain of the high-voltage MOSFET serves as an output terminal of the switch bootstrap charging circuit. The low-voltage MOSFET control module and the high-voltage MOSFET control module generate a gate drive signal of the low-voltage MOSFET and a gate drive signal of the high-voltage MOSFET according to the gate drive signal of the lower power transistor.

公开(公告)号：US10553926B2

公开(公告)日：2020-02-04

申请号：US15739169

申请日：2017-07-19

Applicant: University of Electronic Science and Technology of China

Inventor： Yong Xiang ,  Cong Wang ,  Xuesong Feng ,  Fenfen Liu

IPC: H01P7/04 ,  H01P7/10 ,  H01P7/06

Abstract: The present disclosure is related to the microwave measuring field, and in particularly to a coaxial resonant cavity and system and method for measuring the dielectric constant of material. The coaxial resonant cavity includes a coupling mechanism and a cavity body. The coupling mechanism is accommodated in the cavity body for exciting or coupling microwaves inside the cavity body. The coaxial resonant cavity further includes a probe extending out of the cavity body and being coaxial with the cavity body. The cavity body is shaped as an annular column, and a ratio of an outer radius of the annular column to an inner radius of the annular column is (3-5):1. The present disclosure still provides a system and method for measuring the dielectric constant of material using the coaxial resonant cavity.

公开(公告)号：US10550240B2

公开(公告)日：2020-02-04

申请号：US15825109

申请日：2017-11-29

Applicant: University of Electronic Science and Technology of China

Inventor： Huiling Tai ,  Xueliang Ye ,  Zhen Yuan ,  Rui Guo ,  Yadong Jiang ,  Weizhi Li ,  Xiaosong Du

IPC: B29D7/01 ,  C08J5/18 ,  B32B27/12 ,  C08K3/04 ,  C08F2/20 ,  C08F26/10 ,  C08F120/56 ,  B32B27/30 ,  B32B27/28 ,  C08G73/02 ,  G01N21/35 ,  G01Q60/24 ,  H01J37/28

Abstract: A carbon material-polymer strain sensitive film and its preparation method are disclosed. The carbon material-polymer strain sensitive film includes multiple layers of carbon sensitive films and multiple layers of polymer films, wherein the multiple layers of carbon sensitive films and the multiple layers of polymer films form a multi-layer composite film in sequence through a layer-by-layer assembly process. The preparation method includes steps of: cleaning, processing a hydrophilic treatment and processing a hydrophobic treatment on a rigid substrate in sequence; preparing a carbon material in dispersion solution and a polymer dispersion solution; through a layer-by-layer self-assembly process, growing the polymer and the carbon material in a form of layer-by-layer on the rigid substrate; transferring the composite film from the rigid substrate to a flexible substrate; and pasting two electrodes at two ends of the composite film and encapsulating with a flexible film.

公开(公告)号：US20190371937A1

公开(公告)日：2019-12-05

申请号：US15774291

申请日：2016-09-17

Applicant: University of Electronic Science and Technology of China

Inventor： Min REN ,  Yuci LIN ,  Chi XIE ,  Zhiheng SU ,  Zehong LI ,  Jinping ZHANG ,  Wei GAO ,  Bo ZHANG

IPC: H01L29/78 ,  H01L29/423

Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby. the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

公开(公告)号：US20190288475A1

公开(公告)日：2019-09-19

申请号：US16427347

申请日：2019-05-31

Applicant: University of Electronic Science and Technology of China

Inventor： Yunjiang Rao ,  Kang Li ,  Bing Han ,  Yun Fu ,  Zengling Ran

IPC: H01S3/067 ,  H01S3/094 ,  G01H9/00 ,  G01D5/353

Abstract: A long-distance FODAS amplification system includes a distributed amplification unit, which includes a LEAF, a pump, and a WDM; wherein the pump light passes through the WDM into the LEAF, so as to realize distributed amplification. A long-distance FODAS amplification method includes steps of: 1) modulating and amplifying a light source to obtain the probe pulse light; 2) guiding the pump light and the probe pulse light into LEAF; 3) combining the probe pulse light with the pump light to perform distributed amplification, so as to generate power-raised Rayleigh backscattered light; and 4) converting and demodulating the Rayleigh backscattered light after being output through the circulator, so as to complete distributed sensing.

公开(公告)号：US10310546B2

公开(公告)日：2019-06-04

申请号：US15730407

申请日：2017-10-11

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Yindong Xiao ,  Guangkun Guo ,  Ke Liu ,  Junwu Zhang ,  Houjun Wang ,  Jianguo Huang ,  Shulin Tian

IPC: G06F1/02 ,  G06F15/78 ,  H03K4/02 ,  G01R31/28 ,  G10H1/12 ,  G06F1/03 ,  G06F13/28

Abstract: The present invention provides an arbitrary waveform generator based on instruction architecture. To deal with the feature that the instructions and waveform data of the AWG are coupled in the prior art, an instruction set based waveform synthesis controller is employed, and substitutes for the sequence wave generator in the present invention, i.e. an arbitrary waveform generator based on instruction architecture. Thus the time-sharing scheduling in reading the waveform synthesis instruction and the segment waveform data is realized, and the complexity of the hardware is reduced, so that the AWG in present invention can synthesize and generate a complex sequence wave rapidly and efficiently.

公开(公告)号：US10253413B2

公开(公告)日：2019-04-09

申请号：US15121045

申请日：2015-04-30

Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA

Inventor： Bowan Tao ,  Jie Xiong ,  Fei Zhang ,  Chaoren Li ,  Xiaohui Zhao ,  Yanrong Li

IPC: C23C16/46 ,  C23C16/56 ,  C23C14/24 ,  C23C14/08 ,  C23C14/54 ,  C23C14/56 ,  C23C16/40 ,  C23C16/54

Abstract: The invention provides a thin film deposition system and a method, and relates to the field of thin film deposition. The deposition method comprises the following steps: 1) heating metal substrate; carrying out deposition. The method is characterized in the step 1) that a current is conducted into the metal substrate at one end of the growth zone by one electrode, and out of the metal substrate at the other end of the growth zone by the other electrode, so that the metal substrate is heated by the heat emitting of the resistant of the metal substrate itself. According to the method, the quality of the prepared thin film is improved, while the preparation cost of the thin film is reduced. In addition, the consistent double-sided thin films can be easily prepared on two surfaces of the metal substrate by employing the system and method.

公开(公告)号：US20190067415A1

公开(公告)日：2019-02-28

申请号：US15774286

申请日：2016-09-17

Applicant: University of Electronic Science and Technology of China

Inventor： Min REN ,  Yumeng ZHANG ,  Cong DI ,  Jingzhi XIONG ,  Zehong LI ,  Jinping ZHANG ,  Wei GAO ,  Bo ZHANG

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/40

CPC classification number: H01L29/0615 ,  H01L29/0638 ,  H01L29/407 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7823

Abstract: A junction termination with an internal field plate, the field plate structure and the junction termination extension region are folded inside the device to make full use of the thickness of the drift region in the body, thereby reducing the area of the termination and relieving the electric field concentration at the end of the PN junction. The breakdown position is transferred from the surface into the body of the original PN junction, and the withstand voltage of termination can reach to the breakdown voltage of the parallel plane junction. Under such design, a smaller area can be obtained than that of the conventional structure at the same withstand voltage.

公开(公告)号：US20190057831A1

公开(公告)日：2019-02-21

申请号：US16131028

申请日：2018-11-13

Applicant: University of Electronic Science and Technology of China

Inventor： Zhaoyun Duan ,  Xin Wang ,  Xirui Zhan ,  Fei Wang ,  Shifeng Li ,  Zhanliang Wang ,  Yubin Gong

IPC: H01J25/12 ,  H01J23/20 ,  H01J23/22

CPC classification number: H01J25/12 ,  H01J23/20 ,  H01J23/22

Abstract: A left-handed material extended interaction klystron includes: an input cavity, a middle cavity, an output cavity, first-section drift tube and a second-section drift tube; wherein the input cavity, the middle cavity and the output cavity are all cylindrical resonant cavities having arrays of Complementary electric Split-Ring Resonator (CeSRR) unit cells provided therein; wherein a first side of the input cavity is an input channel of an electron beam, a second side connects the middle cavity via the first-section drift tube; a first T-shaped coaxial input structure is provided in the input cavity; a first side of the output cavity is for connecting a collector, a second side of the output cavity connects the middle cavity via the second-section drift tube, a second T-shaped coaxial output structure is provided in the output cavity.

公开(公告)号：US20190036214A1

公开(公告)日：2019-01-31

申请号：US15959305

申请日：2018-04-23

Applicant: University of Electronic Science and Technology of China

Inventor： Yujian CHENG ,  Yichen ZHONG ,  Renbo HE ,  Yan LIU ,  Yong FAN ,  Kaijun SONG ,  Bo ZHANG ,  Xianqi LIN ,  Yonghong ZHANG

IPC: H01Q3/30 ,  H01Q19/06 ,  H01Q13/02 ,  H01Q3/14

Abstract: An antenna for generating an arbitrarily directed Bessel beam, including a beam-forming plane and a feeding horn, the beam-forming plane is a dual-layer dielectric substrate structure having a beam focusing function, including: a printed circuit bottom layer, a high-frequency dielectric substrate lower layer, a printed circuit middle layer, a high-frequency dielectric substrate upper layer, and, a printed circuit upper layer; the printed circuit bottom layer, the high-frequency dielectric substrate lower layer, the printed circuit middle layer, the high-frequency dielectric substrate upper layer, and the printed circuit upper layer are co-axially stacked from the bottom to the top: the beam-forming plane is entirely divided into periodically arranged beam-forming units by a plurality of meshes, and each beam-forming unit consists of printed circuit upper, middle and lower metal patches of which centers are on the same longitudinal axis, the high-frequency dielectric substrate lower layer and the high-frequency dielectric substrate upper layer.