公开(公告)号：US11112697B2

公开(公告)日：2021-09-07

申请号：US16272962

申请日：2019-02-11

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: H01L21/67 ,  H01L21/687 ,  G03F7/20 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38 ,  G03F7/40

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US11110383B2

公开(公告)日：2021-09-07

申请号：US16897045

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Sultan Malik ,  Srinivas Nemani ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: B01D53/04 ,  H01L21/67 ,  H01L21/673

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US11066747B2

公开(公告)日：2021-07-20

申请号：US15468758

申请日：2017-03-24

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Adib Khan ,  Tobin Kaufman-Osborn ,  Srinivas D. Nemani ,  Ludovic Godet

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/448 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  B05D1/00 ,  B05D1/18

Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.

公开(公告)号：US10947621B2

公开(公告)日：2021-03-16

申请号：US16126760

申请日：2018-09-10

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: C23C16/455 ,  C23C16/448 ,  C23C16/44 ,  C07F15/00

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.

公开(公告)号：US10590530B2

公开(公告)日：2020-03-17

申请号：US16290786

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/455 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

公开(公告)号：US10550472B2

公开(公告)日：2020-02-04

申请号：US14481774

申请日：2014-09-09

Applicant: Applied Materials, Inc.

Inventor： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/452

Abstract: Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

公开(公告)号：US10240232B2

公开(公告)日：2019-03-26

申请号：US15184670

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/455 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

公开(公告)号：US20180342374A1

公开(公告)日：2018-11-29

申请号：US15858886

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/26 ,  C23C16/455

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas can extend through a first gas distribution plate. A grid filter can be positioned between the workpiece support and the plurality of monopole antennas.

公开(公告)号：US20180342372A1

公开(公告)日：2018-11-29

申请号：US15858891

申请日：2017-12-29

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/3065

CPC classification number: H01J37/3211 ,  C23C16/26 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/503 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32715 ,  H01J37/32724 ,  H01J2237/3321 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67017 ,  H01L21/67103 ,  H05H1/46 ,  H05H2001/463 ,  H05H2001/4652 ,  H05H2001/4675

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas. The plurality of monopole antennas are divided into a plurality of groups of monopole antennas, and the AC power source is configured to generate AC power on a plurality of power supply lines at a plurality of different phases, and different groups of monopole antennas are coupled to different power supply lines.

公开(公告)号：US10096466B2

公开(公告)日：2018-10-09

申请号：US15073444

申请日：2016-03-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jun Xue ,  Ludovic Godet ,  Srinivas Nemani ,  Michael W. Stowell ,  Qiwei Liang ,  Douglas A. Buchberger

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/768

Abstract: Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.