公开(公告)号：US20130249001A1

公开(公告)日：2013-09-26

申请号：US13429568

申请日：2012-03-26

申请人： Armin Willmeroth ,  Franz Hirler ,  Peter Irsigler

发明人： Armin Willmeroth ,  Franz Hirler ,  Peter Irsigler

IPC分类号： H01L29/78

CPC分类号： H01L27/0629 ,  H01L21/823487 ,  H01L27/0826 ,  H01L27/0828 ,  H01L27/10841 ,  H01L27/10864 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/10 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/732 ,  H01L29/7395 ,  H01L29/7788 ,  H01L29/78 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7825 ,  H01L29/7838 ,  H01L29/7926 ,  H01L29/8611 ,  H01L29/88

摘要： A semiconductor arrangement includes a semiconductor body and a power transistor arranged in a first device region of the semiconductor body. The power transistor includes at least one source region, a drain region, and at least one body region, at least one drift region of a first doping type and at least one compensation region of a second doping complementary to the first doping type, and a gate electrode arranged adjacent to the at least one body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement also includes a further semiconductor device arranged in a second device region of the semiconductor body. The second device region includes a well-like structure of the second doping type surrounding a first semiconductor region of the first doping type. The further semiconductor device includes device regions arranged in the first semiconductor region.

摘要翻译： 半导体装置包括半导体本体和布置在半导体本体的第一器件区域中的功率晶体管。 功率晶体管包括至少一个源极区，漏极区和至少一个体区，至少一个第一掺杂类型的漂移区和与第一掺杂类型互补的第二掺杂的至少一个补偿区，以及 栅电极，其布置成与所述至少一个体区相邻并且通过栅极电介质与所述体区电介质绝缘。 半导体布置还包括布置在半导体本体的第二器件区域中的另一半导体器件。 第二器件区域包括围绕第一掺杂型的第一半导体区域的第二掺杂型的类似结构。 另外的半导体器件包括布置在第一半导体区域中的器件区域。

公开(公告)号：US08513730B2

公开(公告)日：2013-08-20

申请号：US12021736

申请日：2008-01-29

申请人： Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Hans-Joachim Schulze

发明人： Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Hans-Joachim Schulze

IPC分类号： H01L29/78 ,  H01L29/66

CPC分类号： H01L21/76224 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/161 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/7831

摘要： A semiconductor component with vertical structures having a high aspect ratio and method. In one embodiment, a drift zone is arranged between a first and a second component zone. A drift control zone is arranged adjacent to the drift zone in a first direction. A dielectric layer is arranged between the drift zone and the drift control zone wherein the drift zone has a varying doping and/or a varying material composition at least in sections proceeding from the dielectric.

摘要翻译： 具有高纵横比和垂直结构的半导体元件。 在一个实施例中，漂移区布置在第一和第二组分区之间。 漂移控制区在第一方向上布置成与漂移区相邻。 电介质层布置在漂移区和漂移控制区之间，其中漂移区具有至少在从电介质进行的部分中的变化的掺杂和/或变化的材料组成。

公开(公告)号：US08411471B2

公开(公告)日：2013-04-02

申请号：US12818381

申请日：2010-06-18

申请人： Armin Willmeroth ,  Marc Fahlenkamp

发明人： Armin Willmeroth ,  Marc Fahlenkamp

IPC分类号： H02M3/335

CPC分类号： H01L27/088 ,  H02M1/36

摘要： Disclosed is an electronic circuit with a first load terminal, a second load terminal, a supply terminal configured for having a charge storage arrangement connected thereto, and a load transistor, a current sense circuit with a sense transistor, and a start-up circuit with a start-up transistor.

摘要翻译： 公开了一种电子电路，具有第一负载端子，第二负载端子，被配置为具有与其连接的电荷存储装置的供电端子，以及负载晶体管，具有感测晶体管的电流感测电路和具有感测晶体管的启动电路， 启动晶体管。

公开(公告)号：US08344415B2

公开(公告)日：2013-01-01

申请号：US11924115

申请日：2007-10-25

申请人： Holger Ruething ,  Frank Pfirsch ,  Armin Willmeroth ,  Frank Hille ,  Hans-Joachim Schulze

发明人： Holger Ruething ,  Frank Pfirsch ,  Armin Willmeroth ,  Frank Hille ,  Hans-Joachim Schulze

IPC分类号： H01L29/739

CPC分类号： H01L29/0696 ,  H01L21/22 ,  H01L29/083 ,  H01L29/0834 ,  H01L29/36 ,  H01L29/7395 ,  H01L29/7397

摘要： A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.

摘要翻译： 公开了半导体部件。 一个实施例提供一种半导体本体，其具有在后侧具有至少一个第一导电类型区域和至少一个第二导电类型区域的单元区域。 提供了单元区域中第一导电类型的漂移区。 漂移区包含至少一个区域，电荷载体在半导体组件的工作模式中以一个极性流动，并且电荷载体不以相反极性的半导体组件的工作模式流动。

公开(公告)号：US20120306003A1

公开(公告)日：2012-12-06

申请号：US13118928

申请日：2011-05-31

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/7803 ,  H01L29/7831

摘要： Disclosed is a MOSFET including at least one transistor cell. The at least one transistor cell includes a source region, a drain region, a body region and a drift region. The body region is arranged between the source region and the drift region and the drift region is arranged between the body region and the drain region. The at least one transistor cell further includes a compensation region arranged in the drift region and distant to the body region, a source electrode electrically contacting the source region and the body region, a gate electrode arranged adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a coupling arrangement including a control terminal. The coupling arrangement is configured to electrically couple the compensation region to at least one of the body region, the source region, the source electrode and the gate electrode dependent on a control signal received at the control terminal.

摘要翻译： 披露了包括至少一个晶体管单元的MOSFET。 所述至少一个晶体管单元包括源极区，漏极区，体区和漂移区。 体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和漏极区域之间。 所述至少一个晶体管单元还包括布置在所述漂移区域中并且远离所述体区域的补偿区域，与所述源极区域和所述体区域电接触的源电极，邻近所述体区域布置并与所述主体电介质绝缘的栅电极 区域，以及包括控制端子的耦合装置。 耦合装置被配置为根据在控制端接收到的控制信号将补偿区域电耦合到体区域，源极区域，源电极和栅电极中的至少一个。

公开(公告)号：US07936010B2

公开(公告)日：2011-05-03

申请号：US12342721

申请日：2008-12-23

申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger than a breakdown charge amount at breakdown voltage.

摘要翻译： 公开了一种具有轻掺杂漂移和缓冲层的功率半导体元件。 一个实施例具有在第一导电类型的深阱区之下并且在第二导电类型的轻掺杂漂移和缓冲层之间并且在深阱区之间。 漂移和缓冲层在半导体衬底的相邻表面上的漏极接触层和最深阱区的底部之间具有至少等于深阱区域之间的最小横向距离的最小垂直延伸。 也可以确定垂直延伸，使得漂移缓冲层中的每单位面积的掺杂剂的总量大于击穿电压下的击穿电荷量。

公开(公告)号：US07821033B2

公开(公告)日：2010-10-26

申请号：US11706860

申请日：2007-02-15

申请人： Stefan Sedlmaier ,  Anton Mauder ,  Armin Willmeroth ,  Franz Hirler

发明人： Stefan Sedlmaier ,  Anton Mauder ,  Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/165 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor component is disclosed herein comprising a drift zone and a drift control zone. The drift control zone is arranged adjacent to the drift zone and is dielectrically insulated from the drift zone by a dielectric layer. The drift control zone includes at least one first semiconductor layer and one second semiconductor layer. The first semiconductor layer has a higher charge carrier mobility than the second semiconductor layer.

摘要翻译： 本文公开了一种半导体元件，其包括漂移区和漂移控制区。 漂移控制区域布置成与漂移区相邻，并且通过介电层与漂移区介电绝缘。 漂移控制区包括至少一个第一半导体层和一个第二半导体层。 第一半导体层具有比第二半导体层更高的电荷载流子迁移率。

公开(公告)号：US20100213506A1

公开(公告)日：2010-08-26

申请号：US12773580

申请日：2010-05-04

申请人： Armin Willmeroth ,  Franz Hirler

发明人： Armin Willmeroth ,  Franz Hirler

IPC分类号： H01L27/06 ,  H01L29/78 ,  H01L29/739

CPC分类号： H01L29/7802 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7816 ,  H01L29/7825 ,  H03K17/063 ,  H03K2017/6878

摘要： A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.

摘要翻译： 公开了一种包括具有场电极的MOS晶体管的部件布置。 一个实施例包括栅极，漂移区和场电极，其布置成与漂移区相邻并且通过介电层与漂移区介电绝缘，该充电电路具有连接在栅电极和场电极之间的整流元件。

公开(公告)号：US20100078710A1

公开(公告)日：2010-04-01

申请号：US11874591

申请日：2007-10-18

申请人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler ,  Stefan Sedlmaier

发明人： Armin Willmeroth ,  Anton Mauder ,  Franz Hirler ,  Stefan Sedlmaier

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7804

摘要： A semiconductor component has a drift zone and a drift control zone, a drift control zone dielectric, which is arranged in sections between the drift zone and the drift control zone, and has a first and a second connection zone, which are doped complementarily with respect to one another and which form a pn junction between the drift control zone and a section of the drift zone.

摘要翻译： 半导体部件具有漂移区和漂移控制区，漂移控制区电介质，其布置在漂移区和漂移控制区之间的部分中，并且具有第一和第二连接区，其相互掺杂互补 并且在漂移控制区域和漂移区段的一部分之间形成pn结。

公开(公告)号：US20090321818A1

公开(公告)日：2009-12-31

申请号：US12164611

申请日：2008-06-30

申请人： Armin Willmeroth ,  Anton Mauder ,  Winfried Kaindl

发明人： Armin Willmeroth ,  Anton Mauder ,  Winfried Kaindl

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7395 ,  H01L29/7813

摘要： A semiconductor component with a two-stage body zone. One embodiment provides semiconductor component including a drift zone, and a compensation zone of a second conduction type. The compensation zone is arranged in the drift zone. A source zone and a body zone is provided. The body zone is arranged between the source zone and the drift zone. A gate electrode is arranged adjacent to the body zone. The body zone has a first body zone section and a second body zone section, which are adjacent to one another along the gate dielectric and of which the first body zone section is doped more highly than the second body zone section.

摘要翻译： 具有两级体区的半导体元件。 一个实施例提供了包括漂移区和第二导电类型的补偿区的半导体元件。 补偿区设置在漂移区。 提供源区和体区。 身体区域布置在源区和漂移区之间。 栅电极邻近身体区域布置。 身体区域具有沿着栅极电介质彼此相邻的第一身体区段和第二身体区段部分，并且第一身体区域部分被掺杂得比第二身体区段更高。