公开(公告)号：US20070191411A1

公开(公告)日：2007-08-16

申请号：US11246883

申请日：2005-10-07

申请人： Richard Smith

发明人： Richard Smith

IPC分类号： A61K31/485 ,  A61K31/4745

CPC分类号： A61K31/485 ,  A61K31/4709 ,  A61K31/4745 ,  A61K45/06 ,  A61K47/22 ,  A61K2300/00

摘要： During clinical trials on patients suffering from neurological disorders, it has been observed that some patients obtain dramatic improvements in motor control and/or higher mental functioning, when they receive a combination of dextromethorphan and quinidine, at suitable dosages. Improved motor control has been exemplified to date by improved ability to swallow and/or speak, among victims of stroke, head injury, or ALS. Improved higher mental functioning has been exemplified better job performance, increased ability to analyze and solve problems, and increased ability to have successful and satisfying interactions with other people. These types of effects can be seen in a relatively brief time period, such as within several days to a week.

摘要翻译： 在对患有神经障碍的患者的临床试验期间，已经观察到，当以合适的剂量接受右美沙芬和奎尼丁的组合时，一些患者在运动控制和/或较高的精神功能方面获得显着改善。 在中风，头部受伤或ALS的受害者中，通过改善吞咽和/或说话的能力，已经改进了运动控制。 改善了更高的心理功能已被列为更好的工作表现，增加分析和解决问题的能力，以及增加与其他人取得成功和令人满意的互动的能力。 这些类型的效果可以在相对短的时间内看到，例如在几天到一周之内。

公开(公告)号：US20070135679A1

公开(公告)日：2007-06-14

申请号：US11301912

申请日：2005-12-13

申请人： John Hunt ,  Michael Cropper ,  Richard Smith ,  Richard Schwemberger ,  John Measamer

发明人： John Hunt ,  Michael Cropper ,  Richard Smith ,  Richard Schwemberger ,  John Measamer

IPC分类号： A61B1/00

CPC分类号： A61B1/31 ,  A61B1/00154 ,  A61B17/3421 ,  A61B17/3462 ,  A61B2017/3452 ,  A61B2017/347 ,  A61B2017/3492

摘要： A colonoscopic device stabilizer for stabilizing a colonoscopic device when inserted in an anus of a patient. The stabilizer includes a body adapted for receipt within the anus of a patient. The body has an opening sized and shaped for receiving the colonoscopic device when the device is inserted in the anus of the patient. The stabilizer also includes a clamp attached to the body selectively moveable between a locked position in which the clamp resists movement of the colonoscopic device relative to the body and an unlocked position in which the clamp permits movement of the colonoscopic device relative to the body.

摘要翻译： 一种用于在插入患者肛门时稳定结肠镜装置的结肠镜装置稳定器。 稳定器包括适于在患者的肛门内接收的主体。 身体具有开口尺寸和形状，用于当将装置插入患者的肛门时接收结肠镜装置。 稳定器还包括附接到身体的夹具，其选择性地可在其中夹具抵抗结肠镜检查装置相对于身体的移动的锁定位置和夹具允许结肠镜装置相对于身体移动的解锁位置之间移动。

公开(公告)号：US20070020647A1

公开(公告)日：2007-01-25

申请号：US11354559

申请日：2006-02-14

申请人： Gregory Hageman ,  Richard Smith

发明人： Gregory Hageman ,  Richard Smith

IPC分类号： C12Q1/68

CPC分类号： C07K14/47 ,  A61K9/0048 ,  C07K14/435 ,  C12Q1/6883 ,  C12Q2600/136 ,  C12Q2600/156 ,  C12Q2600/158 ,  C12Q2600/172

摘要： The invention relates to Factor H gene polymorphisms and haplotypes associated with an elevated or a reduced risk of AMD. The invention provides methods and reagents for diagnosis and treatment of AMD.

摘要翻译： 本发明涉及与升高或降低的AMD风险相关的因子H基因多态性和单体型。 本发明提供用于诊断和治疗AMD的方法和试剂。

公开(公告)号：US20070007939A1

公开(公告)日：2007-01-11

申请号：US11436964

申请日：2006-05-16

申请人： John Miller ,  Richard Smith

发明人： John Miller ,  Richard Smith

IPC分类号： G05F5/00

CPC分类号： B60K6/28 ,  B60K6/26 ,  B60K6/365 ,  B60K6/445 ,  B60K6/448 ,  B60L50/16 ,  B60L50/40 ,  B60L50/61 ,  B60L58/20 ,  B60L2210/12 ,  B60L2210/14 ,  F16H2037/102 ,  Y02T10/6217 ,  Y02T10/6239 ,  Y02T10/6243 ,  Y02T10/7005 ,  Y02T10/7022 ,  Y02T10/7066 ,  Y02T10/7077 ,  Y02T10/7225 ,  Y02T10/7233

摘要： A hybrid vehicle propulsion system with a double-layer capacitor is provided. A low voltage double-layer capacitor energy storage system provides power to a hybrid vehicle propulsion system. A boost converter boosts the voltage of the double-layer capacitor system to a higher operating voltage to power at least one motor/generator of the propulsion system.

摘要翻译： 提供了具有双层电容器的混合动力车辆推进系统。 低压双层电容器能量存储系统为混合动力车辆推进系统提供动力。 升压转换器将双层电容器系统的电压升高到更高的工作电压，以为推进系统的至少一个电动机/发电机供电。

公开(公告)号：US20060291623A1

公开(公告)日：2006-12-28

申请号：US11453546

申请日：2006-06-14

申请人： Richard Smith ,  Robert Madden ,  James Connelly

发明人： Richard Smith ,  Robert Madden ,  James Connelly

IPC分类号： G21K5/10

CPC分类号： G01V5/0025 ,  G01N23/20 ,  G01V5/0016 ,  G21K1/02

摘要： An angular analysis system that can be controlled to receive radiation at a defined angle from a defined focus region. The angular analysis system is used for level 2 inspection in an explosive detection system. Level 2 inspection is provided by a three-dimensional inspection system that identifies suspicious regions of items under inspection. The angular analysis system is focused to gather radiation scattered at defined angles from the suspicious regions. Focusing may be achieved in multiple dimensions by movement of source and detector assemblies in a plane parallel to a plane holding the item under inspection. Focusing is achieved by independent motion of the source and detector assemblies. This focusing arrangement provides a compact device, providing simple, low cost and accurate operation.

公开(公告)号：US20060267468A1

公开(公告)日：2006-11-30

申请号：US11500999

申请日：2006-08-09

申请人： John Myers ,  Douglas Pohl ,  Richard Smith

发明人： John Myers ,  Douglas Pohl ,  Richard Smith

IPC分类号： A47B96/04

CPC分类号： F25D23/066 ,  F25D2400/04

摘要： A refrigerator cabinet includes a shell having first and second laterally spaced, upstanding side walls that are interconnected by a top wall, each of the walls includes an in-turned front edge portion defining a liner receiving cavity. The shell further includes a mullion bar, which partitions the shell into first and second liner cavities, and a base member. Both the mullion bar and base member have respective liner receiving portions. With this arrangement, first and second liners are adapted to be inserted into their respective cavities and flexed such that three sides are inserted into the liner receiving cavities, while the remaining side is positioned against a land of the mullion bar or base member. Once in place, the liners are secured through a mullion bar cover and a base member cover. This construction combines the benefits of a front-load process with that of a flex-load process, lowering assembly time without the need to reinforce the liner.

摘要翻译： 冰箱包括壳体，其具有通过顶壁互连的第一和第二横向间隔的直立侧壁，每个壁包括限定衬套接收腔的转向前边缘部分。 壳体还包括将壳分隔成第一和第二衬里空腔的竖框，以及基部构件。 竖框和底部构件都具有相应的衬套接收部分。 利用这种布置，第一和第二衬里适于插入其相应的空腔中并弯曲，使得三个侧面插入到衬套容纳空腔中，而剩余的侧面位于竖框或底座构件的平台上。 一旦到位，衬垫通过竖框杆盖和基座盖固定。 这种结构将前负载过程的优点与柔性加载过程的优点相结合，降低了组装时间，而不需要加固衬套。

公开(公告)号：US20060242230A1

公开(公告)日：2006-10-26

申请号：US11113033

申请日：2005-04-25

申请人： Richard Smith ,  Johanna Wilson

发明人： Richard Smith ,  Johanna Wilson

IPC分类号： G06F15/16

CPC分类号： H04W4/14 ,  H04L12/66 ,  H04L29/06 ,  H04L67/02 ,  H04L69/08 ,  H04W88/184

摘要： A mobile device-to-HTTP protocol gateway (MHG, or “MO Gateway”) which translates between Wireless Mobile Originated commands from an SMSC, and an application server on the Internet (i.e., a “web IP Server”). A wireless Internet gateway establishes communications with one or more relevant SMSCs using standard format SMPP commands, and the MHG utilizes HTTP protocol POST messages to post short messages originated at the mobile device to a particular URL. Return results are received by the MHG via HTTP protocol messages, translated to SMPP messages, and forwarded back to the SMSC for delivery to the mobile device. The wireless Internet Gateway communicates with the MHG using RMI protocol commands. An MHG in accordance with the principles of the present invention enables a developer to create mobile applications using standard web development tools, e.g., Java Servlets. The MHG allows standard format command messages to be used throughout the pathway between a mobile device and an application program on a web IP server at a particular URL.

摘要翻译： 在SMSC的无线移动发起命令和互联网上的应用服务器（即，“Web IP服务器”）之间转换的移动设备到HTTP协议网关（MHG或“MO网关”）。 无线因特网网关使用标准格式的SMPP命令建立与一个或多个相关SMSC的通信，并且MHG利用HTTP协议POST消息将在移动设备发起的短消息发布到特定URL。 返回结果由MHG通过HTTP协议消息接收，转换为SMPP消息，并转发回SMSC以传送到移动设备。 无线因特网网关使用RMI协议命令与MHG进行通信。 根据本发明的原理的MHG使得开发者能够使用标准web开发工具（例如Java Servlet）来创建移动应用。 MHG允许在特定URL的Web IP服务器上的移动设备和应用程序之间的整个路径中使用标准格式命令消息。

公开(公告)号：US20060226412A1

公开(公告)日：2006-10-12

申请号：US11103117

申请日：2005-04-11

申请人： Adam Saxler ,  Yifeng Wu ,  Primit Parikh ,  Umesh Mishra ,  Richard Smith ,  Scott Sheppard

发明人： Adam Saxler ,  Yifeng Wu ,  Primit Parikh ,  Umesh Mishra ,  Richard Smith ,  Scott Sheppard

IPC分类号： H01L29/06

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/02425 ,  H01L21/02439 ,  H01L21/02491 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7787

摘要： Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive GaN substrate, an insulating or semi-insulating GaN epitaxial layer on the conductive GaN substrate, a GaN based semiconductor device on the GaN epitaxial layer and a via hole and corresponding via metal in the via hole that extends through layers of the GaN based semiconductor device and the GaN epitaxial layer.

摘要翻译： 提供半导体器件结构和制造半导体器件结构的方法，其包括在导电半导体衬底和/或导电层上的半绝缘或绝缘GaN外延层。 半绝缘或绝缘GaN外延层具有至少约4μm的厚度。 还提供GaN半导体器件结构和制造GaN半导体器件结构的方法，其包括在导电SiC衬底上的导电SiC衬底和绝缘或半绝缘GaN外延层。 GaN外延层具有至少约4μm的厚度。 还提供GaN半导体器件结构和制造GaN半导体器件结构的方法，其包括导电GaN衬底，导电GaN衬底上的绝缘或半绝缘GaN外延层，GaN外延层上的GaN基半导体器件和 通孔和通孔中相应的通孔金属延伸穿过GaN基半导体器件和GaN外延层的层。

公开(公告)号：US20060071859A1

公开(公告)日：2006-04-06

申请号：US11003255

申请日：2004-12-03

申请人： Edward Condon ,  Richard Smith ,  John Grabner

发明人： Edward Condon ,  Richard Smith ,  John Grabner

IPC分类号： H01Q1/38 ,  H01Q9/04 ,  H01Q5/00

CPC分类号： H01Q1/02 ,  H01Q1/2258 ,  H01Q1/48 ,  H01Q9/0407 ,  H01Q21/28 ,  H01Q25/005

摘要： A system and method improves linearly-polarized microstrip patch antenna performance and fabrication through the incorporation of a pin fin ground plane and an integral antenna feed assembly. In one embodiment, a patch antenna system includes an antenna area with a patch antenna that provides radio communications. A heat dissipation member is coupled to the antenna area and includes a plurality of pins that provide for both the dissipation of heat from the antenna area and a ground plane for the antenna area. An antenna feed line is further coupled with the antenna patch for providing an electrical connection from the antenna patch to other electronic circuitries, such as a wireless device that may be mechanically coupled to the heat dissipation member. Heat generated during the operation of the wireless device is directed to ambient air by way of the heat dissipation member.

摘要翻译： 一种系统和方法通过引入鳍鳍接地平面和整体天线馈电组件来提高线性极化微带贴片天线的性能和制造。 在一个实施例中，贴片天线系统包括具有提供无线电通信的贴片天线的天线区域。 散热构件耦合到天线区域并且包括多个引脚，其提供来自天线区域的热量的散发和用于天线区域的接地平面。 天线馈线还与天线贴片耦合，以提供从天线贴片到其它电子电路的电连接，例如可机械耦合到散热构件的无线装置。 在无线设备的操作期间产生的热量通过散热构件被引导到环境空气。

公开(公告)号：US20060017064A1

公开(公告)日：2006-01-26

申请号：US10899215

申请日：2004-07-26

申请人： Adam Saxler ,  Scott Sheppard ,  Richard Smith

发明人： Adam Saxler ,  Scott Sheppard ,  Richard Smith

IPC分类号： H01L29/739

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

摘要： High electron mobility transistors and/or methods of fabricating high electron mobility transistors that include a first Group III-nitride layer having vertically grown regions, laterally grown regions and a coalescence region are provided. A Group III-nitride channel layer is provided on the first Group III-nitride layer and a Group III-nitride barrier layer is provided on the Group III-nitride channel layer. A drain contact, a source contact and a gate contact are provided on the barrier layer. The gate contact is disposed on a portion of the barrier layer on a laterally grown region of the first Group III-nitride layer and at least a portion of one of the source contact and/or the drain contact is disposed on a portion of the barrier layer on a vertically grown region of the first Group III-nitride layer.