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公开(公告)号：US10971069B2
公开(公告)日：2021-04-06
申请号：US16616234
申请日：2019-04-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Tieshi Wang , Kuanjun Peng , Wei Qin , Chengchung Yang , Xueling Gao , Xiaolong Li , Zhiqiang Xu , Yan Wei , Shengnan Li
IPC: G09G3/3258
Abstract: A pixel driving circuit, a driving method and a display device are provided. The pixel driving circuit includes a driving unit, a capacitor unit, a data write-in unit connected to a corresponding gate line, a corresponding data line and the driving unit, a power source control unit connected to a first light-emitting control end, a power source signal input end and the driving unit, and a first light-emitting control unit connected to a second light-emitting control end, the power source signal input end and the driving unit and configured to, within a predetermined time period of a light-emitting stage, control the power source signal input end to be electrically connected to the driving unit under the control of the second light-emitting control end, stop the operation of the driving unit, and enable the light-emitting unit not to emit light.
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62.发明申请公开(公告)号：US20200381523A1
公开(公告)日：2020-12-03
申请号：US16497658
申请日：2019-04-12
Inventor： Xiaolong Li , Jinchao Bai , Huibin Guo , Xiao Han , Yongzhi Song
IPC: H01L29/417 , H01L29/66 , H01L29/786 , H01L29/40
Abstract: Embodiments of the present disclosure disclose a thin film transistor, a method for manufacturing a thin film transistor, an array substrate, and a display device. The thin film transistor includes a source electrode and a drain electrode, each of the source electrode and the drain electrode including a metal substrate and a conductive layer covering the metal substrate. An adhesion between the conductive layer and a photoresist material is larger than an adhesion between the metal substrate and the photoresist material. The metal substrate and the conductive layer are both formed on a base substrate, an orthographic projection of the conductive layer on the base substrate covers an orthographic projection of the metal substrate on the base substrate, and. an area of the orthographic projection of the conductive layer on the base substrate is larger than an area of the orthographic projection of the metal substrate on the base substrate.
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63.发明授权公开(公告)号：US10551696B2
公开(公告)日：2020-02-04
申请号：US15970803
申请日：2018-05-03
Inventor： Xiaolong Li , Xiaoxiang Zhang , Huibin Guo , Mingxuan Liu , Wenqing Xu , Zumou Wu , Yongzhi Song
IPC: H01L21/027 , G02F1/1343 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/786 , G02F1/1335 , H01L21/3213
Abstract: The present disclosure relates to a metal electrode, an array substrate and a method of producing the same, and a display device. In an embodiment, the method includes: forming a protection layer on a metal layer; patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.
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公开(公告)号：US10431669B2
公开(公告)日：2019-10-01
申请号：US15116980
申请日：2015-10-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolong Li , Zheng Liu , Xiaoyong Lu , Dong Li , Chunping Long
IPC: H01L29/66 , H01L21/20 , H01L21/265 , H01L21/28 , H01L27/12 , H01L29/06 , H01L29/786
Abstract: A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.
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65.发明申请公开(公告)号：US20190094597A1
公开(公告)日：2019-03-28
申请号：US15970803
申请日：2018-05-03
Inventor： Xiaolong Li , Xiaoxiang Zhang , Huibin Guo , Mingxuan Liu , Wenqing Xu , Zumou Wu , Yongzhi Song
IPC: G02F1/1343 , H01L21/027 , H01L27/12 , H01L29/45 , H01L29/49 , H01L29/786
Abstract: The present disclosure relates to a metal electrode, an array substrate and a method of producing the same, and a display device. In an embodiment, the method includes: forming a protection layer on a metal layer; patterning the protection layer to form a protection pattern, a profile of the protection pattern being the same as a profile of a predetermined pattern of the metal electrode; and etching a part of the metal layer not covered by the protection pattern to form the metal electrode, the metal electrode being covered by the protection pattern, wherein an etching anisotropy of the protection layer is larger than an etching anisotropy of the metal layer.
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Patent Agency Ranking
公开(公告)号：US20190074483A1
公开(公告)日：2019-03-07
申请号：US16035524
申请日：2018-07-13
Applicant: BOE Technology Group Co., Ltd.
Inventor： Xiangxiang Zou , Wei Qin , Kuanjun Peng , Xiaolong Li
Abstract: The embodiments of the present disclosure propose a substrate, a method for manufacturing the same, and a display device comprising the substrate. The substrate comprises a supporting base; and a light scattering layer disposed such that a projected region of the light scattering layer on the supporting base is located in a light transmission formation region of the supporting base, and the light scattering layer has a light scattering structure configured to scatter incident light.
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公开(公告)号：US10197846B2
公开(公告)日：2019-02-05
申请号：US14892066
申请日：2015-06-18
Inventor： Yupeng Wang , Xiaolong Li , Lifeng Lin , Chao Tian , Hongming Zhan
IPC: G02F1/1335 , G02F1/13357 , G06F1/16
Abstract: A display device includes a display component (1), which includes a liquid crystal panel and a backlight source (11) with the liquid crystal panel including a liquid crystal cell, a first polarizing sheet (12) located on a side of the liquid crystal cell near the backlight source, and a second polarizing sheet (16) located on a side of the liquid crystal cell away from the backlight source. One of the first polarizing sheet (12) and the second polarizing sheet (16) is movable.
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68.发明申请公开(公告)号：US20170271171A1
公开(公告)日：2017-09-21
申请号：US15321537
申请日：2016-03-07
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaoyong Lu , Chunping Long , Chien Hung Liu , Yucheng Chan , Xiaolong Li , Zheng Liu
IPC: H01L21/321 , H01L21/3213 , H01L21/02
CPC classification number: H01L21/3212 , B81C2201/0121 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/30625 , H01L21/31051 , H01L21/31053 , H01L21/32115 , H01L21/32134 , H01L21/32139 , H01L21/48 , H01L21/7684
Abstract: Embodiments of the present invention provide a method of processing a surface of a polysilicon and a method of processing a surface of a substrate assembly. The method of processing a surface of a polysilicon includes forming a material film on the surface of the polysilicon; and processing, by using a chemico-mechanical polishing technology, the surface of the polysilicon on which the material film is formed. The material film is selected such that the polysilicon is preferentially removed in a polishing process.
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公开(公告)号：US09673333B2
公开(公告)日：2017-06-06
申请号：US15122066
申请日：2016-02-22
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zheng Liu , Xiaoyong Lu , Xiaolong Li , Yu-Cheng Chan
IPC: H01L29/786 , H01L27/02 , H01L27/12
CPC classification number: H01L29/78621 , H01L27/02 , H01L27/1222 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L27/1288 , H01L29/66757 , H01L29/786 , H01L29/78645 , H01L29/78675 , H01L29/78696
Abstract: A method for fabricating a Polysilicon Thin-Film Transistor is provided. The method includes forming a polysilicon active layer, forming a first gate insulation layer and a first gate electrode sequentially on the active layer, conducting a first ion implantation process on the active layer by using the first gate electrode as a mask to form two doped regions at ends of the active layer, forming a second gate insulation layer and a second gate electrode sequentially on the first gate insulation layer and the first gate electrode, and conducting a second ion implantation process on the active layer by using the second gate electrode as another mask to form two source/drain implantation regions at two outer sides of the doped regions of the active layer. Accordingly, impurity concentration of the two doped regions is smaller than that of the two source/drain implantation regions.
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公开(公告)号：US20240105091A1
公开(公告)日：2024-03-28
申请号：US18491531
申请日：2023-10-20
Applicant: BOE Technology Group Co., Ltd.
Inventor： Weixing Liu , Wei Qin , Kuanjun Peng , Tieshi Wang , Chunfang Zhang , Hui Zhang , Changfeng Li , Shunhang Zhang , Kai Hou , Hongrun Wang , Liwei Liu , Yunsik Im , Wanpeng Teng , Xiaolong Li , Kai Guo , Zhiqiang Xu
CPC classification number: G09G3/20 , G11C19/287 , G09G2300/0408 , G09G2310/0267 , G09G2310/0286 , G09G2310/08
Abstract: The present disclosure provides a gate driving circuit, a method of driving a gate driving circuit, and a display panel. The gate driving circuit includes a plurality of driving units connected in cascade. Each driving unit includes: N shift register units; and a mode control circuit connected to the N shift register units, wherein the mode control circuit is configured to receive a control signal for the driving unit, and connect the N shift register units in one of a plurality of resolution modes under the control of the control signal.
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