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111 条记录 (耗时 0.03 秒)

    Etching of solar cell materials
    62.
    发明授权
    Etching of solar cell materials 有权
    蚀刻太阳能电池材料

    公开(公告)号：US07455787B2

    公开(公告)日：2008-11-25

    申请号：US10632747

    申请日：2003-08-01

    申请人： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

    发明人： Douglas H. Rose ,  Pongsthorn Uralwong ,  David D. Smith

    IPC分类号： C23F1/00

    CPC分类号： H01L31/022425 ,  H01L31/02008 ,  H01L31/18

    摘要： A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer in the solar cell is etched without substantially etching a topmost metallic layer comprising tin. For example, an etchant comprising sulfuric acid and hydrogen peroxide may be employed to etch the copper layer selective to the tin layer. A particular example of the aforementioned etchant is a Co-Bra Etcho® etchant modified to comprise about 1% by volume of sulfuric acid, about 4% by volume of phosphoric acid, and about 2% by volume of stabilized hydrogen peroxide. In one embodiment, an aluminum layer in the solar cell is etched without substantially etching the tin layer. For example, an etchant comprising potassium hydroxide may be employed to etch the aluminum layer without substantially etching the tin layer.

    摘要翻译： 通过蚀刻其一个或多个层而不基本上蚀刻太阳能电池的另一层来制造太阳能电池。 在一个实施例中，蚀刻太阳能电池中的铜层而基本上不蚀刻包含锡的最顶层金属层。 例如，可以使用包含硫酸和过氧化氢的蚀刻剂来蚀刻对锡层有选择性的铜层。 上述蚀刻剂的一个具体实例是改性为包含约1体积％的硫酸，约4体积％的磷酸和约2体积％的稳定的过氧化氢的Co-BraEtcho蚀刻剂。 在一个实施例中，蚀刻太阳能电池中的铝层而基本上不蚀刻锡层。 例如，可以使用包含氢氧化钾的蚀刻剂来蚀刻铝层而基本上不蚀刻锡层。

    System and method for output management
    64.
    发明授权
    System and method for output management 有权
    输出管理系统和方法

    公开(公告)号：US06441920B1

    公开(公告)日：2002-08-27

    申请号：US09246646

    申请日：1999-02-08

    申请人： David D. Smith

    发明人： David D. Smith

    IPC分类号： G06F312

    CPC分类号： B41B19/00 ,  G06F3/1213 ,  G06F3/1247 ,  G06F3/1285 ,  G06K15/02 ,  G06K2215/0071 ,  G06K2215/0082 ,  H04N1/00204 ,  H04N1/00236 ,  H04N1/00238 ,  H04N1/32561 ,  H04N2201/0067 ,  H04N2201/0082 ,  H04N2201/33328 ,  H04N2201/33378

    摘要： An output manager that is included in a prepress workflow between a raster image processor and an output device generates a print production format file. The file is created by defining an output device and a press, and configuring a press profile in response to the output device and the press. The output manager receives a reduced resolution image, modifies the reduced resolution image responsive to the press profile, and stores the modified reduced resolution image in a print production file according to the CIP3 format.

    摘要翻译： 包括在光栅图像处理器和输出设备之间的印前工作流程中的输出管理器生成打印生产格式文件。 该文件是通过定义输出设备和印刷机来创建的，并且根据输出设备和印刷机配置印刷机配置文件。 输出管理器接收缩小的分辨率图像，并根据印刷机轮廓修改降低分辨率的图像，并根据CIP3格式将经修改的缩小分辨率图像存储在打印制作文件中。

    Network bridge
    65.
    发明授权
    Network bridge 失效
    网桥

    公开(公告)号：US5400326A

    公开(公告)日：1995-03-21

    申请号：US178373

    申请日：1993-12-22

    申请人： David D. Smith

    发明人： David D. Smith

    IPC分类号： H04L12/46 ,  H04L12/54

    CPC分类号： H04L12/46

    摘要： A bridge for interconnecting data networks includes an adapter connected to each network and a central programmed processor. Each adapter includes a receive and a transmit FIFO storage which is less than the packets being transferred from one network to the other. The control program generates Receive Buffer Descriptors which include buffer pointers, buffer length fields and pointers to next descriptors. These Descriptors are used by the adapters to buffer received packets which are directed to another network. When a packet is buffered the control program generates Transmission Descriptors which are used by the adapter to transfer packet data to the other network. The control program modifies packet when needed by by generating and storing in its memory only the modified portion and including in the Receive Buffer Descriptor pointers which the buffered information which is to be transmitted and the sequence.

    摘要翻译： 用于互连数据网络的桥接器包括连接到每个网络的适配器和中央编程处理器。 每个适配器包括接收和发送FIFO存储器，其小于从一个网络传输到另一个网络的数据包。 控制程序产生接收缓冲区描述符，其包括缓冲区指针，缓冲区长度字段和下一个描述符的指针。 适配器使用这些描述符来缓冲指向另一个网络的接收到的数据包。 当数据包被缓冲时，控制程序产生传输描述符，适配器使用该描述符将数据包数据传输到另一个网络。 当需要时，控制程序通过在其存储器中仅生成和存储修改的部分并且在接收缓冲器描述符指针中包含要发送的缓冲信息和序列来修改分组。

    Metallization of solar cells with differentiated P-type and N-type region architectures
    67.
    发明授权
    Metallization of solar cells with differentiated P-type and N-type region architectures 有权
    具有差异化P型和N型区域结构的太阳能电池的金属化

    公开(公告)号：US09502601B1

    公开(公告)日：2016-11-22

    申请号：US15089382

    申请日：2016-04-01

    申请人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

    发明人： David D. Smith ,  Timothy Weidman ,  Scott Harrington ,  Venkatasubramani Balu

    IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0216 ,  H01L31/0236

    CPC分类号： H01L31/022441 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/0745 ,  Y02E10/50

    摘要： Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a back contact solar cell can include a substrate having a light-receiving surface and a back surface. A first polycrystalline silicon emitter region of a first conductivity type is disposed on a first thin dielectric layer disposed on the back surface of the substrate. A second polycrystalline silicon emitter region of a second, different, conductivity type is disposed on a second thin dielectric layer disposed on the back surface of the substrate. A third thin dielectric layer is disposed over an exposed outer portion of the first polycrystalline silicon emitter region and is disposed laterally directly between the first and second polycrystalline silicon emitter regions. A first conductive contact structure is disposed on the first polycrystalline silicon emitter region. A second conductive contact structure is disposed on the second polycrystalline silicon emitter region. Metallization methods, include etching techniques for forming a first and second conductive contact structure are also described.

    摘要翻译： 描述了具有差异化的P型和N型区域结构的太阳能电池发射极区域的制造方法和所得的太阳能电池。 在一个示例中，背接触太阳能电池可以包括具有光接收表面和背面的基板。 第一导电类型的第一多晶硅发射极区域设置在设置在基板的背面上的第一薄介电层上。 具有第二不同导电类型的第二多晶硅发射极区域设置在设置在基板的背面上的第二薄介电层上。 第三薄介电层设置在第一多晶硅发射极区域的暴露的外部部分上，并且横向地设置在第一和第二多晶硅发射极区域之间。 第一导电接触结构设置在第一多晶硅发射极区域上。 第二导电接触结构设置在第二多晶硅发射极区域上。 还描述了金属化方法，包括用于形成第一和第二导电接触结构的蚀刻技术。

    SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION
    68.
    发明申请
    SOLAR CELL EMITTER REGION FABRICATION USING SUBSTRATE-LEVEL ION IMPLANTATION 审中-公开
    太阳能电池区域制造使用基板级离子植入

    公开(公告)号：US20160284913A1

    公开(公告)日：2016-09-29

    申请号：US14672071

    申请日：2015-03-27

    申请人： Staffan Westerberg ,  Timothy Weidman ,  David D. Smith

    发明人： Staffan Westerberg ,  Timothy Weidman ,  David D. Smith

    IPC分类号： H01L31/065 ,  H01L31/18 ,  H01L31/0224

    CPC分类号： H01L31/1864 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： Methods of fabricating solar cell emitter regions using substrate-level ion implantation, and resulting solar cells, are described. In an example, a method of fabricating a solar cell involves forming a lightly doped region in a semiconductor substrate by ion implantation, the lightly doped region of a first conductivity type of a first concentration. The method also involves forming a first plurality of dopant regions of the first conductivity type of a second, higher, concentration by ion implantation, the first plurality of dopant regions overlapping with a first portion of the lightly doped region. The method also involves forming a second plurality of dopant regions by ion implantation, the second plurality of dopant regions having a second conductivity type of a concentration higher than the first concentration, and the second plurality of dopant regions overlapping with a second portion of the lightly doped region and alternating with but not overlapping the first plurality of dopant regions.

    摘要翻译： 描述了使用衬底级离子注入制造太阳能电池发射极区域的方法，以及所得到的太阳能电池。 在一个实例中，制造太阳能电池的方法包括通过离子注入在半导体衬底中形成轻掺杂区域，即第一浓度的第一导电类型的轻掺杂区域。 该方法还包括通过离子注入形成第一导电类型的第一导电类型的第一多个掺杂区，第一多个掺杂区与轻掺杂区的第一部分重叠。 该方法还涉及通过离子注入形成第二多个掺杂剂区域，第二多个掺杂剂区域具有高于第一浓度的浓度的第二导电类型，并且第二多个掺杂剂区域与轻微的第二部分重叠 并且与第一多个掺杂区域交替而不重叠。