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公开(公告)号：US06667483B2
公开(公告)日：2003-12-23
申请号：US09842789
申请日：2001-04-27
申请人： Atsushi Kobaru , Tadashi Otaka
发明人： Atsushi Kobaru , Tadashi Otaka
IPC分类号： H01J3726
CPC分类号： G01N23/04 , H01J37/20 , H01J37/28 , H01J37/3045 , H01J2237/20292
摘要： An apparatus using charged particle beam is provided with means for detecting positional difference between a target position on a chip pattern within an observation visual field of a microscope after displacing a sample stage thereof and a predetermined position within the visual field, means for storing the detection result and means for determining a new displacement target position for displacement to the predetermined position in subsequent observation while taking into account of the positional difference stored previously and the displacement target position used at the time of storage. When observing another wafer on which the same patterns with the same alignment as the previous one are printed or another pattern on the same wafer, the previous sample stage displacement target designation position is also modified while taking into account of the previous observation visual field position deviation which is registered to the corresponding observation position, and the stage is displaced according to the designation position. Thereby, quick and correct displacement of the observation position within an observation visual field can be realized.
摘要翻译： 使用带电粒子束的装置设置有用于检测显微镜的观察视野内的切片图案上的目标位置与移动其取样台之后的位置差异的装置和视野内的预定位置之间的位置差异的装置， 结果和装置，用于在考虑到先前存储的位置差异和在存储时使用的位移目标位置的同时，确定用于随后观察中位移到预定位置的新位移目标位置。 当观察其上印刷与之前相同的相同图案的另一个晶片或在同一晶片上的另一图案时，先前的样品台位移目标指定位置也被修改，同时考虑到先前的观察视野位置偏差 其被登记到相应的观察位置，并且台根据指定位置而移位。 因此，可以实现观察视野内的观察位置的快速且正确的位移。
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公开(公告)号：US6140644A
公开(公告)日：2000-10-31
申请号：US116345
申请日：1998-07-16
申请人： Yoshimi Kawanami , Akio Yoneyama , Tadashi Otaka
发明人： Yoshimi Kawanami , Akio Yoneyama , Tadashi Otaka
CPC分类号： G01N23/00
摘要： The inspection apparatus uses a particle beam and has a high throughput by obtaining a characteristic frequency corresponding to the characteristic quantity of focusing-shift from a Fourier spectrum of a sample image using a focusing-shift evaluator. A beam blur profile is produced corresponding to the characteristic frequency in a beam blur profile generator. A component of the beam-blur profile is removed from the sample image stored in one dimensional image memory using a de-convolution operator. A dimensional measurement is performed in a critical dimension evaluator for an obtained sample image. Since time spent for focus adjustment using particle beam scanning is obviated, it is possible to reduce the inspection time for a dimension and an appearance abnormality of a semiconductor element.
摘要翻译： 检查装置使用粒子束并且通过使用聚焦移位评估器从样本图像的傅立叶频谱获得与聚焦移位的特征量相对应的特征频率而具有高吞吐量。 对应于光束模糊分布生成器中的特征频率产生光束模糊轮廓。 使用去卷积运算符从存储在一维图像存储器中的样本图像中去除光束模糊轮廓的分量。 对于获得的样本图像，在关键维度评估器中执行尺寸测量。 由于消除了使用粒子束扫描进行焦点调整的时间，因此可以减少半导体元件的尺寸和外观异常的检查时间。
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公开(公告)号：US5912462A
公开(公告)日：1999-06-15
申请号：US692291
申请日：1996-08-02
申请人： Sho Takami , Tadashi Otaka
发明人： Sho Takami , Tadashi Otaka
IPC分类号： H01J37/04 , H01J37/244 , H01J37/28 , H01J37/29
CPC分类号： H01J37/28
摘要： In the electron microscope, a degree of sample contamination caused by irradiating electron beams to a sample can be suppressed to an allowable range. The electron microscope is comprised of: means for directly measuring an electron beam irradiation current to a sample; time measuring means for measuring irradiation time of electron beams to an observation region on the sample; and means for calculating a dose of the electron beams irradiated to the observation region based upon the measured electron beam irradiation current, the measured electron beam irradiation time, and preset observation magnification.
摘要翻译： 在电子显微镜中，通过向样品照射电子束引起的样品污染程度可以抑制在允许范围内。 电子显微镜包括：用于直接测量向样品的电子束照射电流的装置; 用于测量电子束对样品上的观察区域的照射时间的时间测量装置; 以及用于基于测量的电子束照射电流，测量的电子束照射时间和预设观察倍率来计算照射到观察区域的电子束的剂量的装置。
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公开(公告)号：US4803369A
公开(公告)日：1989-02-07
申请号：US771
申请日：1987-01-06
申请人： Tadashi Otaka
发明人： Tadashi Otaka
CPC分类号： H01J37/09
摘要： On a charged particle beam disphragm for confining the angular aperture of a charged particle beam striking a sample, contamination is caused by the impact of the charged particles. A metal material is sputtered by the ion sputtering technique, and the sputtered metal particles are attached over the surface of the contamination incurred on the charged particle beam diaphragm to cover the surface of the contamination. As a result, the charged particle beam diaphragm is substantially purified.
摘要翻译： 在用于限制带电粒子束撞击样品的角孔的带电粒子束上，污染是由带电粒子的影响引起的。 通过离子溅射技术溅射金属材料，并且将溅射的金属颗粒附着在带电粒子束隔膜上产生的污染物的表面上以覆盖污染物的表面。 结果，带电粒子束隔膜基本上被净化。
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公开(公告)号：US08324594B2
公开(公告)日：2012-12-04
申请号：US12370242
申请日：2009-02-12
申请人： Hiroyuki Ito , Yuko Sasaki , Tadashi Otaka
发明人： Hiroyuki Ito , Yuko Sasaki , Tadashi Otaka
CPC分类号： H01J37/28 , H01J37/20 , H01J37/30 , H01J2237/0216 , H01J2237/20214 , H01J2237/20221
摘要： A charged particle beam apparatus can be constructed with a smaller size (resulting in a small installation space) and a lower cost, suppress vibration, operate at higher speed, and be reliable in inspection. The charged particle beam apparatus is largely effective when a wafer having a large diameter is used. The charged particle beam apparatus includes: a plurality of inspection mechanisms, each of which is mounted on a vacuum chamber and has a charged particle beam mechanism for performing at least an inspection on the sample; a single-shaft transfer mechanism that moves the sample between the inspection mechanisms in the direction of an axis of the single-shaft transfer mechanism; and a rotary stage that mounts the sample thereon and has a rotational axis on the single-shaft transfer mechanism. The single-shaft transfer mechanism moves the sample between the inspection mechanisms in order that the sample is placed under any of the inspection mechanisms. The rotary stage positions the sample such that a target portion of the sample can be inspected by the inspection mechanism under which the sample is placed, and the inspection mechanisms inspect the sample.
摘要翻译： 带电粒子束装置可以以较小的尺寸（导致小的安装空间）和较低的成本，抑制振动，更高的速度运行并且可靠地进行检查。 当使用具有大直径的晶片时，带电粒子束装置很有效。 带电粒子束装置包括：多个检查机构，每个检查机构安装在真空室上，并具有至少对样品进行检查的带电粒子束机构; 单轴传送机构，其在所述检查机构之间沿所述单轴传送机构的轴线的方向移动所述样本; 以及将样品安装在其上并在单轴传送机构上具有旋转轴的旋转台。 单轴传送机构将样品移动到检查机构之间，以便将样品放置在任何检查机构下。 旋转台定位样品，使得样品的目标部分可以通过放置样品的检查机构进行检查，检查机构检查样品。
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公开(公告)号：US20100038535A1
公开(公告)日：2010-02-18
申请号：US12560091
申请日：2009-09-15
申请人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
发明人： Osamu Nasu , Tadashi Otaka , Hiroki Kawada , Ritsuo Fukaya , Makoto Ezumi
CPC分类号： H01J37/28 , G01B15/00 , G01N23/225 , H01J2237/2814
摘要： The present invention suppresses decreases in the volumes of the patterns which have been formed on the surfaces of semiconductor samples or of the like, or performs accurate length measurements, irrespective of such decreases. In an electrically charged particle ray apparatus by which the line widths and other length data of the patterns formed on samples are to be measured by scanning the surface of each sample with electrically charged particle rays and detecting the secondary electrons released from the sample, the scanning line interval of said electrically charged particle rays is set so as not to exceed the irradiation density dictated by the physical characteristics of the sample. Or measured length data is calculated from prestored approximation functions.
摘要翻译： 本发明抑制在半导体样品的表面上形成的图案的体积减少，或者执行精确的长度测量，而不管这种减少。 在带电粒子射线装置中，通过用带电粒子射线扫描每个样品的表面并检测从样品释放的二次电子，测量在样品上形成的图案的线宽和其它长度数据，扫描 所述带电粒子束的线间隔被设定为不超过由样品的物理特性决定的照射密度。 或者测量的长度数据由预先存储的近似函数计算。
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公开(公告)号：US07369703B2
公开(公告)日：2008-05-06
申请号：US11501843
申请日：2006-08-10
CPC分类号： G01N23/2251 , G01N21/95684 , G03F7/70616 , G06T7/0004 , G06T2207/30148 , H01J2237/2817
摘要： A system for measuring a pattern on a sample, including: a data processing system that processes a set of two-dimensional distribution data of intensities from the sample, to calculate: a set of edge points indicative of position of edges of the pattern in a two-dimensional plane from the two-dimensional distribution data; an approximation edge indicative of the edge of the pattern; an edge fluctuation data by calculating a difference between the set of edge points and the approximation edge; and a correlation between a first portion of the edge fluctuation data and a second portion of the edge fluctuation data.
摘要翻译： 一种用于测量样本上的图案的系统，包括：数据处理系统，处理来自样本的一组强度的二维分布数据，以计算：一组边缘点，其指示图案的边缘的位置 二维平面从二维分布数据; 指示图案的边缘的近似边缘; 通过计算边缘点集合和近似边缘之间的差异的边缘波动数据; 以及边缘波动数据的第一部分与边缘波动数据的第二部分之间的相关性。
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公开(公告)号：US20060269121A1
公开(公告)日：2006-11-30
申请号：US11501843
申请日：2006-08-10
IPC分类号： G06K9/00
CPC分类号： G01N23/2251 , G01N21/95684 , G03F7/70616 , G06T7/0004 , G06T2207/30148 , H01J2237/2817
摘要： A system for measuring a pattern on a sample, including: a data processing system that processes a set of two-dimensional distribution data of intensities from the sample, to calculate: a set of edge points indicative of position of edges of said pattern in a two-dimensional plane from said two-dimensional distribution data; an approximation edge indicative of the edge of the pattern; an edge roughness data by calculating a difference between the set of edge points and said approximation edge; and a correlation between a first portion of the edge roughness data and a second portion of the edge roughness data.
摘要翻译： 一种用于测量样本上的图案的系统，包括：数据处理系统，处理来自样本的一组强度的二维分布数据，以计算：一组指示所述图案的边缘位置的边缘点， 二维平面从所述二维分布数据; 指示图案的边缘的近似边缘; 通过计算所述一组边缘点和所述近似边缘之间的差异的边缘粗糙度数据; 以及边缘粗糙度数据的第一部分与边缘粗糙度数据的第二部分之间的相关性。
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公开(公告)号：US07095884B2
公开(公告)日：2006-08-22
申请号：US10071097
申请日：2002-02-11
IPC分类号： G06K9/00
CPC分类号： G01N23/2251 , G01N21/95684 , G03F7/70616 , G06T7/0004 , G06T2207/30148 , H01J2237/2817
摘要： The present invention provides a circuit pattern edge inspection method of finding out a failure in a fabricating process and image distortion in an observing apparatus by analyzing, by a non-destructive inspection, the shape of an edge of a line of a fine pattern in which characteristics of the material, process, and an exposure optical system in a semiconductor fabricating process appear, and performing analysis quantitatively. The method includes a step of detecting a set of edge points indicative of positions of edges of the pattern in a two-dimensional plane by a threshold method; a step of obtaining an approximation line for the set of edge points detected; and a step of obtaining an edge roughness shape and a characteristic by calculating the difference between the set of the edge points and the approximation line. A plurality of values are used as thresholds used for the threshold method.
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公开(公告)号：US07038767B2
公开(公告)日：2006-05-02
申请号：US10289401
申请日：2002-11-07
申请人： Yuya Toyoshima , Yasuhiro Mitsui , Yasutsugu Usami , Isao Kawata , Tadashi Otaka
发明人： Yuya Toyoshima , Yasuhiro Mitsui , Yasutsugu Usami , Isao Kawata , Tadashi Otaka
IPC分类号： G01N21/00
CPC分类号： H01L21/67288 , G01B11/30 , G01B15/04 , H01J37/28 , H01J2237/2815
摘要： A light beam is emitted to a test pattern place formed in the scribe area on the wafer for height measurement, an electron beam is emitted to the test pattern place for width and contrast measurement and their correlations are stored. The three-dimensional profile of a pattern in a semiconductor device on the wafer is determined by irradiating the pattern with an electron beam to measure the width and contrast and estimating the height of the pattern by inferring from a correlation corresponding to the measured width and contrast. Thus, a three-dimensional profile measuring system and method capable of measuring the three-dimensional profile of a micropattern in a semiconductor device without cutting the wafer are provided.
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