公开(公告)号：US09356179B2

公开(公告)日：2016-05-31

申请号：US14586847

申请日：2014-12-30

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Chia-Hsin Chao ,  Yen-Hsiang Fang ,  Yi-Chen Lin ,  Ying-Chien Chu ,  Mu-Tao Chu

IPC: H01L33/00 ,  H01L31/173 ,  G02F1/157 ,  H01L27/32 ,  H01L51/52 ,  G02F1/133

CPC classification number: H01L31/173 ,  G02F1/157 ,  G02F2001/13324 ,  G02F2201/44 ,  H01L27/3209 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3227 ,  H01L27/3232 ,  H01L27/3246 ,  H01L27/3272 ,  H01L27/3283 ,  H01L51/5284 ,  H01L2251/5323

Abstract: A display panel comprising a substrate, a meshed shielding pattern, a plurality of light-emitting devices and a solar cell is provided. The substrate has a first surface and a second surface opposite to the first surface, the substrate comprises a first circuit layer disposed over the first surface and a second circuit layer disposed over the second surface. The meshed shielding pattern is disposed on first surface of the substrate to define a plurality of pixel regions over the substrate. The light-emitting devices are disposed on the first surface of the substrate and electrically connected to the first circuit layer, and at least one of the light-emitting devices is disposed in one of the pixel regions. The solar cell is disposed on the second surface of the substrate and electrically connected to the second circuit layer.

Abstract translation: 提供了包括基板，网状屏蔽图案，多个发光装置和太阳能电池的显示面板。 衬底具有与第一表面相对的第一表面和第二表面，衬底包括设置在第一表面上的第一电路层和设置在第二表面上的第二电路层。 网状屏蔽图案设置在基板的第一表面上以在基板上限定多个像素区域。 发光装置设置在基板的第一表面上并电连接到第一电路层，并且至少一个发光装置设置在一个像素区域中。 太阳能电池设置在基板的第二表面上并电连接到第二电路层。

公开(公告)号：US20150179880A1

公开(公告)日：2015-06-25

申请号：US14139880

申请日：2013-12-24

Applicant: Industrial Technology Research Institute

Inventor： Yen-Hsiang Fang ,  Rong Xuan ,  Chia-Lung Tsai ,  Yu-Hsiang Chang

IPC: H01L33/14 ,  H01L33/32

CPC classification number: H01L33/14 ,  H01L33/32

Abstract: A nitride light emitting diode structure including a first type doped semiconductor layer, a second type doped semiconductor layer, a light emitting layer, a first metal pad, a second metal pad and a magnetic film is disclosed. The magnetic film disposed between the first metal pad and the first type doped semiconductor layer includes a zinc oxide (ZnO) layer doped with cobalt (Co). The content of Co in the ZnO layer ranges from 5% to 25% by molar ratio.

Abstract translation: 公开了一种包括第一掺杂半导体层，第二掺杂半导体层，发光层，第一金属焊盘，第二金属焊盘和磁性膜的氮化物发光二极管结构。 设置在第一金属焊盘和第一类型掺杂半导体层之间的磁性膜包括掺杂有钴（Co）的氧化锌（ZnO）层。 ZnO层中Co的含量为5〜25摩尔％。

公开(公告)号：US20150111329A1

公开(公告)日：2015-04-23

申请号：US14583594

申请日：2014-12-27

Applicant: Industrial Technology Research Institute

Inventor： Ming-Hsien Wu ,  Ying-Chien Chu ,  Shih-Hao Wang ,  Yen-Hsiang Fang ,  Mu-Tao Chu

IPC: H01L33/00 ,  H01L33/56 ,  H01L33/62

CPC classification number: H01L33/0095 ,  H01L25/0753 ,  H01L27/153 ,  H01L33/44 ,  H01L33/58 ,  H01L2224/95 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A transfer-bonding method for light emitting devices including following steps is provided. A plurality of light emitting devices is formed over a first substrate and is arranged in array, wherein each of the light emitting devices includes a device layer and an interlayer sandwiched between the device layer and the first substrate. A protective layer is formed over the first substrate to selectively cover parts of the light emitting devices, and other parts of the light emitting devices are uncovered by the protective layer. The device layers uncovered by the protective layer are bonded with a second substrate. The interlayers uncovered by the protective layer are removed, so that parts of the device layers uncovered by the protective layer are separated from the first substrate and are transfer-bonded to the second substrate.

Abstract translation: 提供了包括以下步骤的发光器件的转印 - 粘合方法。 多个发光器件形成在第一衬底上并且被布置成阵列，其中每个发光器件包括器件层和夹在器件层和第一衬底之间的夹层。 在第一基板上形成保护层以选择性地覆盖部分发光器件，并且发光器件的其它部分被保护层覆盖。 由保护层未覆盖的器件层与第二衬底结合。 由保护层覆盖的夹层被去除，使得被保护层未覆盖的器件层的部分与第一衬底分离并且转移结合到第二衬底。

公开(公告)号：US20140103354A1

公开(公告)日：2014-04-17

申请号：US14049209

申请日：2013-10-09

Applicant: Industrial Technology Research Institute

Inventor： Chih-Wei Hu ,  Chen-Zi Liao ,  Yen-Hsiang Fang ,  Rong Xuan

IPC: H01L29/205

CPC classification number: H01L29/205 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L29/2003 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride semiconductor structure including a silicon substrate, a nucleation layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate includes a cubic silicon carbon nitride (SiCN) layer. The buffer layer is disposed on the nucleation layer. The nitride semiconductor layer is disposed on the buffer layer.

Abstract translation: 提供了包括硅衬底，成核层，缓冲层和氮化物半导体层的氮化物半导体结构。 设置在硅衬底上的成核层包括立方氮化硅（SiCN）层。 缓冲层设置在成核层上。 氮化物半导体层设置在缓冲层上。