Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer
    61.
    发明授权
    Method of making PIN-type photo detecting element with a controlled thickness of window semiconductor layer 有权
    制造具有受控厚度的窗口半导体层的PIN型光电检测元件的方法

    公开(公告)号:US08105866B2

    公开(公告)日:2012-01-31

    申请号:US12711881

    申请日:2010-02-24

    摘要: A semiconductor photo detecting element includes a PIN-type photo detecting element and window semiconductor layer. The PIN-type photo detecting element has a semiconductor substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer. The first semiconductor layer is provided on the semiconductor substrate, is lattice-matched to the semiconductor substrate, includes a first conductivity type dopant, and has first band gap energy. The second semiconductor layer is provided on the first semiconductor layer, has the first band gap energy, and has a concentration of the first conductivity type dopant lower than that of the first semiconductor layer or is substantially undoped. The third semiconductor layer is provided on the second semiconductor layer. The window semiconductor layer has second band gap energy larger than the first band gap energy at a light-incoming side with respect to the second semiconductor layer and has a thickness of 5 nm to 50 nm.

    摘要翻译: 半导体光电检测元件包括PIN型光检测元件和窗半导体层。 PIN型光检测元件具有半导体衬底,第一半导体层,第二半导体层和第三半导体层。 第一半导体层设置在半导体衬底上,与半导体衬底晶格匹配,包括第一导电型掺杂剂,并且具有第一带隙能量。 第二半导体层设置在第一半导体层上,具有第一带隙能量,并且第一导电类型掺杂物的浓度低于第一半导体层的浓度或基本上未掺杂。 第三半导体层设置在第二半导体层上。 窗口半导体层具有比相对于第二半导体层的光入射侧的第一带隙能量大的第二带隙能量,并且具有5nm至50nm的厚度。

    Semiconductor photodetector and method for manufacturing the same
    62.
    发明申请
    Semiconductor photodetector and method for manufacturing the same 有权
    半导体光电探测器及其制造方法

    公开(公告)号:US20110068428A1

    公开(公告)日:2011-03-24

    申请号:US12926484

    申请日:2010-11-22

    IPC分类号: H01L31/107 H01L31/18

    摘要: In order to improve reliability by preventing an edge breakdown in a semiconductor photodetector having a mesa structure such as a mesa APD, the semiconductor photodetector comprises a mesa structure formed on a first semiconductor layer of the first conduction type formed on a semiconductor substrate, the mesa structure including a light absorbing layer for absorbing light, an electric field buffer layer for dropping an electric field intensity, an avalanche multiplication layer for causing avalanche multiplication to occur, and a second semiconductor layer of the second conduction type, wherein the thickness of the avalanche multiplication layer at the portion in the vicinity of the side face of the mesa structure is made thinner than the thickness at the central portion of the mesa structure.

    摘要翻译: 为了通过防止具有诸如台面APD的台面结构的半导体光电探测器中的边缘击穿来提高可靠性,半导体光电检测器包括形成在形成在半导体衬底上的第一导电类型的第一半导体层上的台面结构,台面 包括用于吸收光的光吸收层的结构,用于降低电场强度的电场缓冲层,用于引起雪崩倍增的雪崩倍增层和第二导电类型的第二半导体层,其中雪崩的厚度 在台面结构的侧面附近的部分的倍增层比台面结构的中央部分的厚度薄。

    Process for producing a functional device-mounted module
    65.
    发明申请
    Process for producing a functional device-mounted module 失效
    用于制造功能装置安装模块的方法

    公开(公告)号:US20080311707A1

    公开(公告)日:2008-12-18

    申请号:US12222437

    申请日:2008-08-08

    IPC分类号: H01L21/00

    摘要: The present disclosure provides an optical functional device-mounted module which needs no expensive or special members, can be reduced in size, and provide a producing process thereof. A bank to dam a liquid sealing resin is provided on a substrate around an optical functional device, the substrate being formed with a predetermined wiring pattern and having the optical functional device mounted thereon. The liquid sealing resin is filled between the functional device and the bank by dropping the liquid sealing resin therebetween. A package component member having a light transmission hole corresponding to an optical function part of the optical functional device is brought into contact with the bank such that the light transmission hole is opposed to the function part of the optical functional device, thereby causing the package component member to contact with the liquid sealing resin. The package component member is fixed onto the substrate by curing the liquid sealing resin and the bank is finally cut off and removed.

    摘要翻译: 本公开提供了一种不需要昂贵或特殊构件的光学功能装置安装模块,可以减小尺寸并提供其制造方法。 在光学功能器件周围的基板上设置有用于防止液体密封树脂的堤坝,该基板由预定的布线图案形成并且安装有光学功能元件。 液体密封树脂通过在其间滴落液体密封树脂而填充在功能元件和堤岸之间。 具有与光功能元件的光学功能部分相对应的透光孔的封装部件与堤相接触,使得透光孔与光功能元件的功能部分相对,从而使封装元件 与液体密封树脂接触的部件。 通过固化液体密封树脂将封装构件部件固定在基板上,最后切断并移除堤岸。

    Semiconductor light-receiving device
    66.
    发明授权
    Semiconductor light-receiving device 失效
    半导体光接收装置

    公开(公告)号:US07368750B2

    公开(公告)日:2008-05-06

    申请号:US10665204

    申请日:2003-09-22

    IPC分类号: H01L29/04 H01L31/036

    摘要: A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrate and has a lower impurity concentration than the semiconductor layer of the first conduction type; a light absorption layer that is formed on the buffer layer and generates carriers in accordance with incident light; a semiconductor layer of a second conduction type that is formed on the light absorption layer; and a semiconductor intermediate layer that is interposed between the buffer layer and the light absorption layer, and has a forbidden bandwidth within a range lying between the forbidden bandwidth of the buffer layer and the forbidden bandwidth of the light absorption layer.

    摘要翻译: 半导体光接收装置包括:半绝缘基板; 形成在半绝缘基板上的第一导电型半导体层; 所述第一导电类型的缓冲层形成在所述半绝缘基板上并且具有比所述第一导电类型的半导体层更低的杂质浓度; 形成在缓冲层上并根据入射光产生载流子的光吸收层; 形成在所述光吸收层上的第二导电类型的半导体层; 以及介于缓冲层和光吸收层之间的半导体中间层,并且在缓冲层的禁止带宽和光吸收层的禁止带宽之间的范围内具有禁止带宽。

    Information processing apparatus and method and program for mediating applications
    67.
    发明申请
    Information processing apparatus and method and program for mediating applications 有权
    用于中介应用的信息处理设备和方法和程序

    公开(公告)号:US20070235537A1

    公开(公告)日:2007-10-11

    申请号:US11727725

    申请日:2007-03-28

    IPC分类号: G06K7/00

    CPC分类号: G06F13/102

    摘要: An information processing apparatus is capable of being connected to an IC card via a reader/writer. The information processing apparatus includes a middleware and a device driver provided so as to correspond to the reader/writer. The middleware provides a plurality of applications for the IC card with basic functions shared by the applications. The device driver sequentially processes a plurality of commands received from the plurality of applications via the middleware in the order in which the commands are received so as to control the corresponding reader/writer. In this way, the applications concurrently access the reader/writer.

    摘要翻译: 信息处理装置能够经由读写器与IC卡连接。 信息处理设备包括中间件和设备驱动器,以便与读/写器对应。 中间件为IC卡提供了多个应用程序,具有应用程序共享的基本功能。 设备驱动器按照接收命令的顺序依次处理从多个应用程序接收的多个命令,以控制对应的读取器/写入器。 这样,应用程序同时访问读写器。

    Niobium oxide and method for producing the same
    68.
    发明申请
    Niobium oxide and method for producing the same 审中-公开
    氧化铌及其制造方法

    公开(公告)号:US20070031324A1

    公开(公告)日:2007-02-08

    申请号:US11518620

    申请日:2006-09-08

    IPC分类号: C01G31/02

    摘要: An object of the present invention is to provide a niobium oxide that is suitable for application to capacitors, high in purity, large in specific surface area and small in particle size. The present invention also provides a method for producing such a high-purity niobium oxide. The present invention provides a niobium oxide that is a low oxidation number niobium oxide obtained from a high oxidation number niobium oxide, characterized in that the niobium oxide has a specific surface area (BET value) of 2.0 m2/g to 50.0 m2/g. The production method comprising dry reducing niobium pentoxide to produce niobium monoxide is characterized in that the reduction treatment is carried out stepwise in two steps. In the stepwise reduction, it is preferable that a carbon-containing reducing agent be used at least in any one of the two steps, and the temperature and the ambient pressure be maintained in a predetermined range in each of the steps.

    摘要翻译: 本发明的目的是提供一种适用于高纯度,比表面积大,粒径小的电容器的铌氧化物。 本发明还提供了这种高纯度铌氧化物的制造方法。 本发明提供一种氧化铌氧化物,其是由高氧化铌氧化物获得的低氧化铌氧化物,其特征在于,所述铌氧化物的比表面积(BET值)为2.0m 2以上, g至50.0 m 2 / g。 包含干燥还原铌五氧化物以制备铌一氧化铌的制备方法的特征在于还原处理分两步进行。 在逐步还原中,优选至少在两个步骤中的任一个中使用含碳还原剂,并且在每个步骤中将温度和环境压力保持在预定范围内。

    Double-faced adhesive tape and wing with the same
    69.
    发明申请
    Double-faced adhesive tape and wing with the same 有权
    双面胶带和机翼相同

    公开(公告)号:US20060144413A1

    公开(公告)日:2006-07-06

    申请号:US10544573

    申请日:2004-07-15

    IPC分类号: A41G3/00

    CPC分类号: A41G3/0025 Y10T428/28

    摘要: A double-stick adhesive tape (10) for fixing a wig (100) to a head, of which the surface of at least one side (12) of both sides of adhesive layers (12, 13) on a core material (11) is deglossed by forming minute concavity and convexity (12a), one side of adhesive layer (12) is formed to have a thickness to bury at least more than half of a wire diameter of the filament (103) used as a net member of a wig base (101), thereby one side of adhesive layer (12) is set inside of a network (104) of the net member, and bonded to the net member, a filament (103) is peripherally bonded with the adhesive layer (12) and the other adhesive layer (13) is bonded to the head.

    摘要翻译: 一种用于将假发(100)固定到头部的双面粘合带(10),其中芯材(11)上的粘合剂层(12,13)两侧的至少一侧(12)的表面, 通过形成微小的凹凸(12a)而消失,粘合剂层(12)的一侧形成为具有至少大于铜丝直径的一半以上的厚度 一个假发基座(101),由此将粘合剂层(12)的一侧设置在网状部件的网络(104)的内部,并且结合到网状部件上,将长丝(103)与粘合剂层 12),另一个粘合剂层(13)结合到头部。