公开(公告)号：US20070254390A1

公开(公告)日：2007-11-01

申请号：US11414581

申请日：2006-04-28

申请人： David Bour ,  Jacob Smith ,  Jie Su ,  Sandeep Nijhawan

发明人： David Bour ,  Jacob Smith ,  Jie Su ,  Sandeep Nijhawan

IPC分类号： H01L21/00

CPC分类号： H01L33/007

摘要： Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other.

摘要翻译： 公开了具有非对称双面结构的氮化物光电器件和制造这种结构的方法。 两个n型III-N层同时形成在具有基本相同组成的衬底的相对侧上。 此后，在n型III-N层之一上形成p型III-N有源层，而不是在另一层上形成p型III-N有源层。

公开(公告)号：US20070254100A1

公开(公告)日：2007-11-01

申请号：US11411672

申请日：2006-04-26

申请人： Sandeep Nijhawan ,  Lori Washington ,  Jacob Smith ,  Gary Kwong ,  David Bour ,  David Eaglesham

发明人： Sandeep Nijhawan ,  Lori Washington ,  Jacob Smith ,  Gary Kwong ,  David Bour ,  David Eaglesham

IPC分类号： C23C16/00 ,  B05C11/00

CPC分类号： C23C16/303 ,  C23C16/4482 ,  C23C16/52

摘要： Methods and systems permit fabricating structures using liquid sources without active temperature control. A substrate is disposed within a substrate processing chamber. A liquid source of a group-III precursor is provided in a bubbler. A push gas is applied to the liquid source to drive the group-III precursor into a vaporizer. A carrier gas is flowed into the vaporizer. A flow of vaporized group-III precursor carried by the carrier gas is injected from the vaporizer into the processing chamber. A nitrogen precursor is flowed into the processing chamber. A group-III nitride layer is deposited over the substrate with a thermal chemical vapor deposition within the processing chamber using the vaporized group-III precursor and the nitrogen precursor.

摘要翻译： 方法和系统允许使用没有主动温度控制的液体源制造结构。 基板设置在基板处理室内。 在起泡器中提供III族前体的液体源。 推动气体被施加到液体源以驱动III族前体进入蒸发器。 载气流入蒸发器。 由载气携带的汽化的III族前体的流动从蒸发器注入到处理室中。 氮气前体流入处理室。 使用蒸发的III族前体和氮前体，在处理室内通过热化学气相沉积在衬底上沉积III族氮化物层。

公开(公告)号：US20070243652A1

公开(公告)日：2007-10-18

申请号：US11404525

申请日：2006-04-14

申请人： David Bour ,  Sandeep Nijhawan ,  Lori Washington ,  Jacob Smith ,  David Eaglesham

发明人： David Bour ,  Sandeep Nijhawan ,  Lori Washington ,  Jacob Smith ,  David Eaglesham

IPC分类号： H01L21/205 ,  H01L21/365

CPC分类号： C23C16/481 ,  C23C16/303 ,  C23C16/45502 ,  C23C16/4583 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0079

摘要： Methods are provided of fabricating compound nitride semiconductor structures. A group-III precursor and a nitrogen precursor are flowed into a processing chamber to deposit a first layer over a surface of a first substrate with a thermal chemical-vapor-deposition process. A second layer is deposited over a surface of a second substrate with the thermal chemical-vapor-deposition process using the first group-III precursor and the first nitrogen precursor. The first and second substrates are different outer substrates of a plurality of stacked substrates disposed within the processing chamber as a stack so that the first and second layers are deposited on opposite sides of the stack. Deposition of the first layer and deposition of the second layer are performed simultaneously.

摘要翻译： 提供了制造复合氮化物半导体结构的方法。 将III族前体和氮前体流入处理室中，以通过热化学气相沉积工艺在第一基板的表面上沉积第一层。 使用第一组III前体和第一氮前体，通过热化学气相沉积工艺将第二层沉积在第二衬底的表面上。 第一和第二基板是作为堆叠设置在处理室内的多个堆叠基板的不同的外部基板，使得第一和第二层沉积在堆叠的相对侧上。 同时进行第一层的沉积和第二层的沉积。

公开(公告)号：US07180923B2

公开(公告)日：2007-02-20

申请号：US10367200

申请日：2003-02-13

申请人： David Bour ,  Chaokun Lin ,  Michael Tan ,  Bill Perez

发明人： David Bour ,  Chaokun Lin ,  Michael Tan ,  Bill Perez

IPC分类号： H01S5/00

CPC分类号： H01S5/18358 ,  H01S5/0421 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/3095 ,  H01S5/3235

摘要： An improved tunnel junction structure and a VCSEL that uses this structure is disclosed. The tunnel junction includes first, second, and third layers that include materials of the InP family of materials. The first layer is doped with n-type dopant species to a concentration of 1019 dopant atoms per cm3 or greater. The second layer is doped with Zn to a similar concentration and is in contact with the first layer. The interface between the first and second layers forms a tunnel junction. The third layer includes a material that retards the diffusion of Zn out of the second layer. The third layer preferably includes undoped AlInAs. The tunnel junction structure of the present invention can be utilized in a VCSEL having an active layer between first and second mirrors that are both constructed from n-type semiconductor layers.

摘要翻译： 公开了一种改进的隧道结结构和使用该结构的VCSEL。 隧道结包括第一层，第二层和第三层，包括InP材料系列的材料。 第一层掺杂有n型掺杂剂物质，浓度为每厘米3或更大的10 19掺杂剂原子。 第二层掺杂有类似浓度的Zn并与第一层接触。 第一和第二层之间的界面形成隧道结。 第三层包括阻止Zn扩散到第二层的材料。 第三层优选包括未掺杂的AlInAs。 本发明的隧道结结构可以用于具有由n型半导体层构成的第一和第二反射镜之间的有源层的VCSEL。

公开(公告)号：US20060269183A1

公开(公告)日：2006-11-30

申请号：US11141100

申请日：2005-05-31

申请人： David Bour ,  Jintian Zhu

发明人： David Bour ,  Jintian Zhu

IPC分类号： G02F1/035

CPC分类号： B82Y20/00 ,  G02F1/01725 ,  G02F2001/0175 ,  G02F2001/01758

摘要： An optical modulator comprises a first waveguide layer and a barrier layer, and a quantum well layer sandwiched between the first waveguide layer and the barrier layer, where the quantum well layer has a graded composition that varies the bandgap energy of the quantum well layer between a minimum bandgap energy and the bandgap energy of at least one of the first waveguide layer and the barrier layer.

摘要翻译： 光调制器包括第一波导层和阻挡层，以及夹在第一波导层和阻挡层之间的量子阱层，其中量子阱层具有改变量子阱层的带隙能量的分级组成 最小带隙能量和第一波导层和阻挡层中的至少一个的带隙能量。

公开(公告)号：US06807214B2

公开(公告)日：2004-10-19

申请号：US10211865

申请日：2002-08-01

申请人： Scott W. Corzine ,  David Bour

发明人： Scott W. Corzine ,  David Bour

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0265 ,  H01S5/3403 ,  H01S5/34306 ,  H01S5/34373

摘要： A modulated light emitter having a laser and modulator constructed on a common substrate. The light emitter includes an active layer having a quantum well (QW) layer sandwiched between first and second barrier layers. The active layer includes a laser region and a modulator region connected by a waveguide. The laser region emits light when a potential is applied across the active layer in the laser region. The modulator region has a first state in which the modulator region absorbs the generated light and a second state in which the modulator region transmits the generated light. The modulator region assumes either the first or second state depending on the potential across the modulator region. The QW layer in the modulator region is under a tensile strain, which provides improved light absorption in the first state.