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106 条记录 (耗时 0.038 秒)

    Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor
    62.
    发明申请
    Method Of Manufacturing Electric Device, Array Of Electric Devices, And Manufacturing Method Therefor 有权
    电气设备制造方法，电气设备阵列及其制造方法

    公开(公告)号：US20130001554A1

    公开(公告)日：2013-01-03

    申请号：US13173986

    申请日：2011-06-30

    申请人： Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

    发明人： Jong Won Chung ,  Christopher J. Bettinger ,  Zhenan Bao ,  Do Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

    IPC分类号： H01L29/12 ,  H01L21/66 ,  H01L51/30

    CPC分类号： H01L51/0558 ,  H01L51/0003 ,  H01L51/0026 ,  H01L51/0541 ,  H01L51/0545

    摘要： An example embodiment relates to a method of manufacturing an array of electric devices that includes attaching a platform including a micro-channel structure to a substrate. The method includes injecting first and second solutions into the micro-channel structure to form at least three liquid film columns, where the first and second solutions include different solvent composition ratios and the liquid columns each, respectfully, include different solvent composition ratios. The method further includes detaching the platform the substrate, removing solvent from the liquid film columns to form thin film columns, and treating the thin film columns under different conditions along a length direction of the thin film columns. The solvent is removed from the thin film columns and the thin film columns are treated under different conditions along a length direction of the thin film columns.

    摘要翻译： 示例性实施例涉及一种制造电气设备阵列的方法，其包括将包括微通道结构的平台附接到基板。 该方法包括将第一和第二溶液注入到微通道结构中以形成至少三个液膜柱，其中第一和第二溶液包括不同的溶剂组成比，并且液柱各自包括不同的溶剂组成比。 该方法还包括将基板分离，从液膜柱移除溶剂以形成薄膜柱，以及沿着薄膜柱的长度方向在不同条件下处理薄膜柱。 从薄膜柱中除去溶剂，并在薄膜柱的长度方向上在不同的条件下处理薄膜柱。

    Interface Apparatus And Methods
    63.
    发明申请
    Interface Apparatus And Methods 有权
    接口设备及方法

    公开(公告)号：US20120075241A1

    公开(公告)日：2012-03-29

    申请号：US13229338

    申请日：2011-09-09

    申请人： Zhenan Bao ,  Benjamin Chee-Keong Tee

    发明人： Zhenan Bao ,  Benjamin Chee-Keong Tee

    IPC分类号： G06F3/045 ,  B32B37/14 ,  B05D5/12

    CPC分类号： G01L1/146 ,  G01L1/148 ,  G06F3/0412 ,  G06F3/0414 ,  G06F3/044 ,  G06F2203/04102 ,  G06F2203/04103 ,  G06F2203/04107 ,  H01L29/84 ,  H01L51/0055 ,  H01L51/0541 ,  Y10T29/49002 ,  Y10T156/10

    摘要： Input devices are provided. In accordance with an example embodiment, an input device includes an interface layer that flexes in response to pressure, a plurality of sense electrodes, a dielectric between the sense electrodes and the interface layer, and interconnecting circuitry. The dielectric compresses or expands in response to movement of the interface layer, and exhibits dielectric characteristics that vary based upon a state of compression of the dielectric. The interconnecting circuitry is to the sense electrodes and provides an output indicative of both the position of each sense electrode and an electric characteristic at each sense electrode that provides an indication of pressure applied to the dielectric adjacent the respective sense electrodes.

    摘要翻译： 提供输入设备。 根据示例实施例，输入装置包括响应于压力而弯曲的界面层，多个感测电极，感测电极和界面层之间的电介质以及互连电路。 电介质根据界面层的移动而压缩或膨胀，并且表现出基于电介质的压缩状态而变化的介电特性。 互连电路是针对感测电极并提供指示每个感测电极的位置和每个感测电极处的电特性两者的输出，该电特性提供施加到邻近各个感测电极的电介质的压力的指示。

    FULLERENE-DOPED NANOSTRUCTURES AND METHODS THEREFOR
    64.
    发明申请
    FULLERENE-DOPED NANOSTRUCTURES AND METHODS THEREFOR 有权
    全能的纳米结构及其方法

    公开(公告)号：US20110204319A1

    公开(公告)日：2011-08-25

    申请号：US13011402

    申请日：2011-01-21

    申请人： Ajay Virkar ,  Melburne C. Lemieux ,  Zhenan Bao

    发明人： Ajay Virkar ,  Melburne C. Lemieux ,  Zhenan Bao

    IPC分类号： H01L29/66 ,  H01L21/22 ,  B82Y99/00 ,  B82Y40/00

    CPC分类号： H01L51/0048 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  H01L51/0046

    摘要： Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.

    摘要翻译： 掺杂纳米结构以设定电导率特性。 根据各种示例性实施例，纳米结构如碳纳米管掺杂有卤化富勒烯型掺杂剂材料。 在一些实施方案中，掺杂剂材料从溶液沉积或通过气相沉积沉积，并用于掺杂纳米管以增加纳米管的热和/或电导率。

    PATTERNING OF ORGANIC SEMICONDUCTOR MATERIALS
    65.
    发明申请
    PATTERNING OF ORGANIC SEMICONDUCTOR MATERIALS 有权
    有机半导体材料的构图

    公开(公告)号：US20100308309A1

    公开(公告)日：2010-12-09

    申请号：US12743772

    申请日：2008-11-20

    申请人： Stefan Christian Bernhardt Mannsfeld ,  Armon Sharei ,  Zhenan Bao

    发明人： Stefan Christian Bernhardt Mannsfeld ,  Armon Sharei ,  Zhenan Bao

    IPC分类号： H01L51/00 ,  H01L51/40 ,  G03F7/20

    CPC分类号： H01L51/0003 ,  H01L51/0012 ,  H01L51/0036 ,  H01L51/0541

    摘要： Organic semiconductor material can be patterned from a solution onto a substrate by selectively wetting the substrate with the solution while applying a mechanical disturbance (such as stirring the solution while the substrate is immersed, or wiping the solution on the substrate). The organic semiconductor material can then be precipitated out of the solution, for example to bridge gaps between source and drain electrodes to form transistor devices. In some embodiments, the solution containing the organic semiconductor material can be mixed in an immiscible host liquid. This can allow the use of higher concentration solutions while also using less of the organic semiconductor material.

    摘要翻译： 通过在施加机械扰动（例如在浸渍基材时搅拌溶液或将基板上的溶液擦拭）的机械干扰（例如搅拌溶液），通过在溶液中选择性地润湿基材，可以将有机半导体材料从溶液图案化。 然后可以将有机半导体材料从溶液中沉淀出来，例如以桥接源极和漏极之间的间隙以形成晶体管器件。 在一些实施方案中，含有有机半导体材料的溶液可以混合在不混溶的主体液体中。 这可以允许使用更高浓度的溶液，同时也使用少量的有机半导体材料。

    Method for Forming Self-Assembled Monolayer Film, and Structural Body and Field-Effect Transistor Having Same
    68.
    发明申请
    Method for Forming Self-Assembled Monolayer Film, and Structural Body and Field-Effect Transistor Having Same 审中-公开
    形成自组装单层膜的方法，以及具有相同结构体和场效应晶体管的方法

    公开(公告)号：US20090297868A1

    公开(公告)日：2009-12-03

    申请号：US12127605

    申请日：2008-05-27

    申请人： Yutaka Ito ,  Zhenan Bao ,  Jason Locklin

    发明人： Yutaka Ito ,  Zhenan Bao ,  Jason Locklin

    IPC分类号： B05D3/12 ,  B05D3/02 ,  B32B9/04

    CPC分类号： H01L51/0533 ,  H01L51/0545 ,  Y10T428/31663

    摘要： A method for forming a self-organized monomolecular film, including at least: dissolving an alkylsilane compound having at least an alkoxysilane group or a chlorosilane group at one end of a molecule in an organic solvent having a dielectric constant of 3.0 or more to 6.0 or less to obtain a solution; subsequently coating the solution on a base material or immersing the base material into the solution; and subsequently drying the solution located on the base material.

    摘要翻译： 一种形成自组织单分子膜的方法，至少包括：将分子一端具有至少烷氧基硅烷基或氯硅烷基的烷基硅烷化合物溶解在介电常数为3.0以上至6.0的有机溶剂中，或 较少获得解决方案; 随后将溶液涂覆在基材上或将基材浸入溶液中; 随后干燥位于基材上的溶液。

    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    69.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 审中-公开
    用于生产有机场效应晶体管的方法

    公开(公告)号：US20080090325A1

    公开(公告)日：2008-04-17

    申请号：US11550229

    申请日：2006-10-17

    申请人： Martin KOENEMANN ,  Peter Erk ,  Zhenan Bao ,  Mang Mang Ling

    发明人： Martin KOENEMANN ,  Peter Erk ,  Zhenan Bao ,  Mang Mang Ling

    IPC分类号： H01L51/40 ,  C07D471/02 ,  C07D471/22

    CPC分类号： C07D493/06 ,  C07D471/06 ,  H01L27/283 ,  H01L51/0053 ,  H01L51/0545

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    摘要翻译： 一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到 栅极结构，源电极和漏电极所在的衬底的区域，其中n型有机半导体化合物选自式I化合物，其中R 1， R 2，R 3和R 4独立地是氢，氯或溴，条件是这些基团中的至少一个不是 氢，Y 1是O或NR a，其中R a是氢或有机残基，Y 2， 是O或NR b，其中R b是氢或有机残基，Z 1，Z 2， Z 3和Z 4是O，其中，在Y 1是NR a a的情况下， 残基Z 1和Z 2中的一个可以是NR c，其中R a， 另一方面，在末端键之间具有2〜5个原子的桥连基团，其中，在Y 2的情况下，NR 2是其中之一， 残基Z 3和Z 4可以是NR d D基团，其中R b和R 4都是 一起是在末端键之间具有2至5个原子的桥连基团。

    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    70.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 有权

    公开(公告)号：US20080017850A1

    公开(公告)日：2008-01-24

    申请号：US11744611

    申请日：2007-05-04

    申请人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    发明人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    IPC分类号： H01L51/30 ,  C07D471/08 ,  H01L51/40 ,  C07D471/22

    CPC分类号： H01L51/0053 ,  C07D471/06 ,  C07D471/16 ,  C07D493/06 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/0558

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.