公开(公告)号：US08891172B2

公开(公告)日：2014-11-18

申请号：US12402015

申请日：2009-03-11

申请人： Eric Eva ,  Payam Tayebati ,  Michael Thier ,  Markus Hauf ,  Ulrich Schoenhoff ,  Ole Fluegge ,  Arif Kazi ,  Alexander Sauerhoefer ,  Gerhard Focht ,  Jochen Weber ,  Toralf Gruner

发明人： Eric Eva ,  Payam Tayebati ,  Michael Thier ,  Markus Hauf ,  Ulrich Schoenhoff ,  Ole Fluegge ,  Arif Kazi ,  Alexander Sauerhoefer ,  Gerhard Focht ,  Jochen Weber ,  Toralf Gruner

IPC分类号： G02B9/00 ,  G03F7/20 ,  G02B27/00 ,  G02B7/02

CPC分类号： G03F7/70891 ,  G02B7/028 ,  G02B27/0068 ,  G03F7/70266

摘要： The disclosure relates to an optical element configure to at least partial spatially resolve correction of a wavefront aberration of an optical system (e.g., a projection exposure apparatus for microlithography) to which optical radiation can be applied, as well as related systems and methods.

摘要翻译： 本公开涉及一种光学元件，其被配置为至少部分空间地解决可以应用光辐射的光学系统（例如，用于微光刻的投影曝光设备）的波前像差的校正，以及相关的系统和方法。

公开(公告)号：US20130188162A1

公开(公告)日：2013-07-25

申请号：US13782103

申请日：2013-03-01

申请人： Michael Gerhard ,  Bernd Doerband ,  Toralf Gruner

发明人： Michael Gerhard ,  Bernd Doerband ,  Toralf Gruner

IPC分类号： G03F7/20

CPC分类号： G03F7/70191 ,  G03F7/70266 ,  G03F7/706 ,  G03F7/70833 ,  G03F7/70891

摘要： A method for operating a projection exposure tool for microlithography is provided. The projection exposure tool includes an optical system which includes a number of optical elements which, during an imaging process, convey electromagnetic radiation. All of the surfaces of the optical elements interact with the electromagnetic radiation during the imaging process to form an overall optical surface of the optical system. The method includes: determining respective individual thermal expansion coefficients at at least two different locations of the overall optical surface; calculating a change to an optical property of the optical system brought about by heat emission of the electromagnetic radiation (during the imaging process upon the basis of the thermal expansion coefficients; and imaging mask structures into an image plane via the projection exposure tool with adaptation of the imaging characteristics of the projection exposure tool so that the calculated change to the optical property is at least partially compensated.

摘要翻译： 提供了一种用于操作用于微光刻的投影曝光工具的方法。 投影曝光工具包括光学系统，其包括在成像过程期间传送电磁辐射的多个光学元件。 光学元件的所有表面在成像过程中与电磁辐射相互作用以形成光学系统的总体光学表面。 该方法包括：确定整个光学表面的至少两个不同位置处的相应各个热膨胀系数; 计算由电磁辐射的热辐射引起的光学系统的光学特性的变化（在基于热膨胀系数的成像过程期间）;以及通过投影曝光工具将掩模结构成像到图像平面中， 投影曝光工具的成像特性，使得计算出的对光学特性的变化至少部分地被补偿。

公开(公告)号：US08446665B2

公开(公告)日：2013-05-21

申请号：US12562693

申请日：2009-09-18

申请人： Alexander Epple ,  Vladimir Kamenov ,  Toralf Gruner ,  Thomas Schicketanz

发明人： Alexander Epple ,  Vladimir Kamenov ,  Toralf Gruner ,  Thomas Schicketanz

IPC分类号： G02B5/08

CPC分类号： G02B17/0892 ,  G02B1/11 ,  G02B17/08 ,  G02B17/0896 ,  G03F7/70 ,  G03F7/70225 ,  G03F7/70275

摘要： Catadioptric projection objective (1) for microlithography for imaging an object field (3) in an object plane (5) onto an image field (7) in an image plane (9). The objective includes a first partial objective (11) imaging the object field onto a first real intermediate image (13), a second partial objective (15) imaging the first intermediate image onto a second real intermediate image (17), and a third partial objective (19) imaging the second intermediate image onto the image field. The second partial objective is a catadioptric objective having exactly one concave mirror and having at least one lens (L21, L22). A first folding mirror (23) deflects the radiation from the object plane toward the concave mirror and a second folding mirror (25) deflects the radiation from the concave mirror toward the image plane. At least one surface of a lens (L21, L22) of the second partial objective has an antireflection coating having a reflectivity of less than 0.2% for an operating wavelength of between 150 nm and 250 nm and for an angle-of-incidence range of between 0° and 30°. As an alternative or in addition, all the surfaces of the lenses of the second partial objective are configured such that the deviation from the marginal ray concentricity is greater than or equal to 20°.

摘要翻译： 用于微光刻的反折射投影物镜（1），用于将物平面（5）中的物场（3）成像到图像平面（9）中的图像场（7）上。 该目的包括将对象场成像到第一实际中间图像（13）上的第一部分目标（11），将第一中间图像成像到第二实际中间图像（17）上的第二部分目标（15） 物镜（19）将第二中间图像成像到图像场上。 第二部分目标是具有恰好一个凹面镜并具有至少一个透镜（L21，L22）的反射折射物镜。 第一折叠镜（23）将来自物体平面的辐射偏转到凹面镜，并且第二折叠镜（25）将来自凹面镜的辐射偏转到图像平面。 第二部分物镜的透镜的至少一个表面（L21，L22）具有对于150nm至250nm的工作波长具有小于0.2％的反射率的抗反射涂层，并且对于 介于0°和30°之间。 作为替代或另外，第二部分物镜的透镜的所有表面被配置为使得与边缘射线同心度的偏差大于或等于20°。

公开(公告)号：USRE44216E1

公开(公告)日：2013-05-14

申请号：US12604821

申请日：2009-10-23

申请人： Michael Totzeck ,  Heiko Feldmann ,  Toralf Gruner ,  Karl-Heinz Schuster ,  Joern Greif-Wuestenbecker ,  Thomas Scheruebl ,  Wolfgang Harnisch ,  Norbert Rosenkranz ,  Ulrich Matejka

发明人： Michael Totzeck ,  Heiko Feldmann ,  Toralf Gruner ,  Karl-Heinz Schuster ,  Joern Greif-Wuestenbecker ,  Thomas Scheruebl ,  Wolfgang Harnisch ,  Norbert Rosenkranz ,  Ulrich Matejka

IPC分类号： G02B23/00

CPC分类号： G03F7/70566 ,  G02B5/3025 ,  G02B21/0016 ,  G03F7/70666 ,  Y10S359/90

摘要： An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

摘要翻译： 用于检查显微镜的光学成像系统，通过该光学成像系统可以通过光学掩模来检查缺陷，特别是通过高光阑扫描器系统的仿真。 用于模拟高光圈成像系统的显微镜成像系统包括成像光学器件，检测器和评估单元，其中偏振光学元件选择性地布置在照明光束路径中，用于产生照明光束和/或成像光束的不同偏振状态 用于选择成像光束的不同偏振分量的路径，具有偏振相关强度衰减功能的光学元件可以被引入到成像光束路径中，掩模和/或采样的图像被检测器接收用于不同偏振光束分量， 被传送到评估单元进行进一步处理。

公开(公告)号：US08330935B2

公开(公告)日：2012-12-11

申请号：US12703068

申请日：2010-02-09

申请人： Albrecht Ehrmann ,  Ulrich Wegmann ,  Rainer Hoch ,  Joerg Mallmann ,  Karl-Heinz Schuster ,  Ulrich Loering ,  Toralf Gruner ,  Bernhard Kneer ,  Bernhard Geuppert ,  Franz Sorg ,  Jens Kugler ,  Norbert Wabra

发明人： Albrecht Ehrmann ,  Ulrich Wegmann ,  Rainer Hoch ,  Joerg Mallmann ,  Karl-Heinz Schuster ,  Ulrich Loering ,  Toralf Gruner ,  Bernhard Kneer ,  Bernhard Geuppert ,  Franz Sorg ,  Jens Kugler ,  Norbert Wabra

IPC分类号： G03B27/52 ,  G03B27/68 ,  G03B27/58

CPC分类号： G03F7/70341 ,  G03F7/70591 ,  G03F7/70691 ,  G03F7/7085 ,  G03F7/70875 ,  G03F7/70891 ,  G03F7/70991

摘要： A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.

摘要翻译： 微光刻投影曝光装置包括配置为浸没操作的投影透镜。 为此，将浸没液体引入位于图像侧的投影透镜的最后一个透镜与待曝光的感光层之间的浸没空间中。 为了减少由浸没液体内发生的温度梯度引起的折射率的波动，投影曝光装置包括加热或冷却浸没液的部分体积的传热元件，以便达到至少基本均匀或至少基本上旋转对称的温度 在浸液中的分布。

公开(公告)号：US08294991B2

公开(公告)日：2012-10-23

申请号：US12687299

申请日：2010-01-14

申请人： Ralf Mueller ,  Toralf Gruner ,  Michael Totzeck ,  Heiko Feldmann ,  Hans-Jochen Paul

发明人： Ralf Mueller ,  Toralf Gruner ,  Michael Totzeck ,  Heiko Feldmann ,  Hans-Jochen Paul

IPC分类号： G02B27/00

CPC分类号： G03F7/70308 ,  G02B5/205 ,  G02B5/283 ,  G02B26/001 ,  G02B26/0825 ,  G03F7/70191 ,  G03F7/70266 ,  G03F7/70566

摘要： An optical system of a microlithographic projection exposure apparatus permits comparatively flexible and fast influencing of the intensity distribution and/or the polarization state. The optical system includes at least one layer system that is at least one-side bounded by a lens or a mirror. The layer system is an interference layer system of several layers and has at least one liquid or gaseous layer portion with a maximum thickness of one micrometer (μm), and a manipulator for manipulation of the thickness profile of the layer portion.

摘要翻译： 微光刻投影曝光装置的光学系统允许强度分布和/或偏振状态的相对灵活和快速的影响。 光学系统包括至少一个由透镜或反射镜限定的一个层系统。 层系统是几层的干涉层系统，并且具有至少一个最大厚度为1微米（μm）的液体或气体层部分，以及用于操纵层部分的厚度分布的操纵器。

公开(公告)号：US08248578B2

公开(公告)日：2012-08-21

申请号：US12410640

申请日：2009-03-25

申请人： Julian Kaller ,  Toralf Gruner

发明人： Julian Kaller ,  Toralf Gruner

IPC分类号： G03B27/52

CPC分类号： G03F7/70933 ,  G03F7/70191 ,  G03F7/70575 ,  G03F7/70941

摘要： In a projection exposure method, primary radiation having a center wavelength λ is generated and guided through an illumination system along an illumination path and through a projection system along a projection path. The center wavelength is varied within a wavelength variation range Δλ having a lower limit λMIN≦λ and an upper limit λMAX≧λ. A specific absorption coefficient k(λ) of at least one gaseous absorbent species selected from the group consisting of oxygen (O2), ozone (O3) and water vapor (H2O) present in at least one gas-filled space along at least one of the illumination path and the projection path varies between a minimum absorption coefficient kMIN and a maximum absorption coefficient kMAX within the wavelength variation range such that an absorption ratio (kMAX/kMIN) exceeds 10. A concentration of the absorbent species within the gas-filled space is controlled such that an overall absorption variation effected by the absorbent species for all rays running along differing ray paths towards the image field is maintained below a predetermined absorption variation threshold value.

摘要翻译： 在投影曝光方法中，产生具有中心波长λ的一次辐射并沿着照明路径通过照明系统并沿着投影路径通过投影系统。 中心波长在具有下限λMIN＆nlE;λ和上限λMAX≥λ的波长变化范围＆Dgr;λ内变化。 至少一种选自氧（O 2），臭氧（O 3）和水蒸汽（H 2 O）的气体吸收物质的比吸收系数k（λ）存在于至少一个气体填充空间中， 照射路径和投影路径在波长变化范围内的最小吸收系数kMIN和最大吸收系数kMAX之间变化，使得吸收比（kMAX / kMIN）超过10。气体填充空间内的吸收物质的浓度 被控制为使得沿着沿着不同光线路朝着图像场行进的所有射线的吸收物质的整体吸收变化保持在预定吸收变化阈值以下。

公开(公告)号：US20120188636A1

公开(公告)日：2012-07-26

申请号：US13440226

申请日：2012-04-05

申请人： Wilhelm Ulrich ,  Thomas Okon ,  Norbert Wabra ,  Toralf Gruner ,  Boris Bittner ,  Volker Graeschus

发明人： Wilhelm Ulrich ,  Thomas Okon ,  Norbert Wabra ,  Toralf Gruner ,  Boris Bittner ,  Volker Graeschus

IPC分类号： G02B17/08

CPC分类号： G03F7/70308 ,  G02B17/08 ,  G02B27/0025 ,  G03F7/70216 ,  G03F7/70225 ,  G03F7/70258 ,  G03F7/70266

摘要： A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.

摘要翻译： 一种用于校正光刻投影曝光机的投影物镜的至少一个图像缺陷的方法，所述投影物镜包括由多个透镜和至少一个反射镜组成的光学装置，所述至少一个反射镜具有光学操作表面， 可能是有缺陷的并且因此对至少一个图像缺陷负责，包括以下步骤：至少近似地确定主光线高度hMH与至少一个反射镜的光学操作表面处的边缘光线高度hMR的比率VM， 至少近似地确定透镜的透镜表面中的至少一个光学透镜表面，其中主光线高度hLH与边缘光线高度hLR的比值VL的大小至少最接近于比率VM，并且至少选择至少 用于校正图像缺陷的一个确定的透镜表面。

公开(公告)号：US20120176591A1

公开(公告)日：2012-07-12

申请号：US13423965

申请日：2012-03-19

申请人： Franz Sorg ,  Peter Deufel ,  Toralf Gruner

发明人： Franz Sorg ,  Peter Deufel ,  Toralf Gruner

IPC分类号： G03B27/32

CPC分类号： G03F7/70308 ,  G03F7/70825 ,  G03F7/70933

摘要： The disclosure relates to a microlithography projection exposure system having optical corrective elements configured to modify the imaging characteristics, as well as related systems and component.

摘要翻译： 本公开涉及具有被配置为修改成像特性以及相关系统和部件的光学校正元件的微光刻投影曝光系统。

公开(公告)号：US08174676B2

公开(公告)日：2012-05-08

申请号：US13187003

申请日：2011-07-20

申请人： Wilhelm Ulrich ,  Thomas Okon ,  Norbert Wabra ,  Toralf Gruner ,  Boris Bittner ,  Volker Graeschus

发明人： Wilhelm Ulrich ,  Thomas Okon ,  Norbert Wabra ,  Toralf Gruner ,  Boris Bittner ,  Volker Graeschus

IPC分类号： G03B27/70

CPC分类号： G03F7/70308 ,  G02B17/08 ,  G02B27/0025 ,  G03F7/70216 ,  G03F7/70225 ,  G03F7/70258 ,  G03F7/70266

摘要： A method for correcting at least one image defect of a projection objective of a lithography projection exposure machine, the projection objective comprising an optical arrangement composed of a plurality of lenses and at least one mirror, the at least one mirror having an optically operative surface that can be defective and is thus responsible for the at least one image defect, comprises the steps of: at least approximately determining a ratio VM of principal ray height hMH to marginal ray height hMR at the optically operative surface of the at least one mirror, at least approximately determining at least one optically operative lens surface among the lens surfaces of the lenses, at which the magnitude of a ratio VL of principal ray height hLH to marginal ray height hLR comes at least closest to the ratio VM, and selecting the at least one determined lens surface for the correction of the image defect.

摘要翻译： 一种用于校正光刻投影曝光机的投影物镜的至少一个图像缺陷的方法，所述投影物镜包括由多个透镜和至少一个反射镜组成的光学装置，所述至少一个反射镜具有光学操作表面， 可能是有缺陷的并且因此对至少一个图像缺陷负责，包括以下步骤：至少近似地确定主光线高度hMH与至少一个反射镜的光学操作表面处的边缘光线高度hMR的比率VM， 至少近似地确定透镜的透镜表面中的至少一个光学透镜表面，其中主光线高度hLH与边缘光线高度hLR的比值VL的大小至少最接近于比率VM，并且至少选择至少 用于校正图像缺陷的一个确定的透镜表面。