公开(公告)号：US06754053B2

公开(公告)日：2004-06-22

申请号：US10108472

申请日：2002-03-29

申请人： Masatoshi Yoshikawa ,  Masashi Sahashi ,  Katsuhiko Koi ,  Hitoshi Iwasaki ,  Hiromi Yuasa ,  Hideaki Fukuzawa

发明人： Masatoshi Yoshikawa ,  Masashi Sahashi ,  Katsuhiko Koi ,  Hitoshi Iwasaki ,  Hiromi Yuasa ,  Hideaki Fukuzawa

IPC分类号： G11B5127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3143 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/325

摘要： A magnetoresistance effect film including a magnetically pinned layer, a non-magnetic intermediate layer and a magnetically free layer has sidewall layers covering at least side surfaces of the magnetically pinned layer and the non-magnetic intermediate layer. The sidewall layers are made of a high-resistance oxide, nitride, fluoride, boride, sulfide or carbide having a specular reflection effect against conduction electrons, thereby to prevent non-elastic scattering of electrons and missing of spin information on side surfaces of the magnetoresistance effect film.

摘要翻译： 包括磁性钉扎层，非磁性中间层和无磁性层的磁阻效应膜具有覆盖磁性被钉扎层和非磁性中间层的至少侧面的侧壁层。 侧壁层由具有对传导电子的镜面反射效应的高电阻氧化物，氮化物，氟化物，硼化物，硫化物或碳化物制成，从而防止电子的非弹性散射和在磁阻的侧表面上缺少自旋信息 效果片。

公开(公告)号：US06348274B1

公开(公告)日：2002-02-19

申请号：US09472144

申请日：1999-12-27

申请人： Yuzo Kamiguchi ,  Hiromi Yuasa ,  Masashi Sahashi ,  Hitoshi Iwasaki

发明人： Yuzo Kamiguchi ,  Hiromi Yuasa ,  Masashi Sahashi ,  Hitoshi Iwasaki

IPC分类号： G11B566

CPC分类号： H01F10/3263 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1171

摘要： A magnetoresistive element includes a pinned layer, free layer and non-magnetic spacer film between them. The pinned layer is made up of a first ferromagnetic metal layer, first non-metal layer on the first ferromagnetic metal layer, second non-metal layer on the first non-metal layer and different in composition from the first non-metal layer, and second ferromagnetic metal layer on the second non-metal layer. Thus, the magnetoresistive element, which may be used in a magnetic head of a magnetic recording apparatus, ensures a good bias property of the pinned film while maintaining a large MR changing rate of a specular spin valve structure, and it is simultaneously improved in soft magnetic property.

摘要翻译： 磁阻元件包括它们之间的钉扎层，自由层和非磁性间隔膜。 被钉扎层由第一强磁性金属层，第一铁磁金属层上的第一非金属层，第一非金属层上的第二非金属层和第一非金属层的组成不同而构成，以及 第二非铁金属层上的第二铁磁金属层。 因此，可以用于磁记录装置的磁头中的磁阻元件确保了被钉扎膜的良好的偏置特性，同时保持了镜面自旋阀结构的大的MR变化率，同时在软的 磁性。

公开(公告)号：US06338899B1

公开(公告)日：2002-01-15

申请号：US09332440

申请日：1999-06-14

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B566

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.

摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁层相邻设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。

公开(公告)号：US06336978B1

公开(公告)日：2002-01-08

申请号：US09419924

申请日：1999-10-18

申请人： Yoichi Tokai ,  Masashi Sahashi

发明人： Yoichi Tokai ,  Masashi Sahashi

IPC分类号： H01F1053

CPC分类号： F02G1/0445 ,  F02G2250/18 ,  F05C2225/08 ,  F25B9/14 ,  F25B2309/003 ,  H01F1/012 ,  H01F1/015

摘要： A heat regenerative material including AMz, where A is at least one rare earth element selected from the group consisting of Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm and Yb; M is at least one metal selected from the group consisting of Ni and Co; and z is 0.001 to 9.0; the heat regenerative material being formed of particles with an average diameter of 1-2,000 &mgr;m or filaments with an average diameter of 1-2,000 &mgr;m.

摘要翻译： 包括AMz的热再生材料，其中A是选自Y，La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm中的至少一种稀土元素，和 Yb; M是选自Ni和Co中的至少一种金属; z为0.001〜9.0; 热再生材料由平均直径为1-2,000μm的颗粒或平均直径为1-2,000μm的长丝形成。

公开(公告)号：US06256171B1

公开(公告)日：2001-07-03

申请号：US08937183

申请日：1997-09-29

申请人： Hiroaki Yoda ,  Akio Hori ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Masatoshi Yoshikawa ,  Miki Mori

发明人： Hiroaki Yoda ,  Akio Hori ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Masatoshi Yoshikawa ,  Miki Mori

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/10 ,  G11B5/105 ,  G11B5/3106 ,  G11B5/3967 ,  G11B5/40 ,  G11B2005/3996 ,  Y10S977/934

摘要： A thin film magnetic head has a reproducing element or/and recording element which is held from the direction of its thickness between a first ceramic substrate and a second ceramic substrate. The reproducing element or/and recording element is positioned at substantially the center with respect to the direction of track width. The first and second ceramic substrates hold the reproducing element or/and recording element from, for example, the direction of track width. The reproducing element or/and recording element is provided with a yoke type reproducing part which has at least one pair of magnetic cores with a magnetic gap therebetween on the side of a medium opposed face and a magnetoresistance effect element to which a signal magnetic flux from a magnetic recording medium is led through the pair of magnetic cores. Heat due to a sense current and heat due to the contact between the reproducing element or/and recording element and the magnetic recording medium are efficiently dissipated to the first and second ceramic substrates, thereby retarding a temperature increase of the reproducing element or/and recording element. Abrasion in the neighborhood of the reproducing element or/and recording element is retarded by the first and second ceramic substrates. A magnetic recording apparatus is provided with a magnetic recording medium, and a magnetic head slider having the thin film magnetic head described above.

摘要翻译： 薄膜磁头具有从第一陶瓷基板和第二陶瓷基板之间的厚度方向保持的再现元件或/和记录元件。 再现元件或/和记录元件相对于轨道宽度的方向基本上位于中心。 第一和第二陶瓷衬底从例如轨道宽度的方向保持再现元件或/和记录元件。 再现元件或/和记录元件设置有磁轭式再现部件，该磁轭式再现部件在介质相对面侧具有至少一对磁芯，其间具有磁隙，并且磁阻效应元件具有来自 磁记录介质被引导通过一对磁芯。 由于由于再现元件或/和记录元件与磁记录介质之间的接触而产生的感测电流和热的热量被有效地耗散到第一和第二陶瓷基板，从而延迟再现元件的温度升高或/和记录 元件。 在再现元件或/和记录元件附近的磨损被第一和第二陶瓷衬底延迟。 具有磁记录介质的磁记录装置和具有上述薄膜磁头的磁头滑块。

公开(公告)号：US6165607A

公开(公告)日：2000-12-26

申请号：US101455

申请日：1998-07-17

申请人： Takashi Yamanobe ,  Naomi Fujioka ,  Takashi Ishigami ,  Nobuo Katsui ,  Hiromi Fuke ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Takashi Watanabe

发明人： Takashi Yamanobe ,  Naomi Fujioka ,  Takashi Ishigami ,  Nobuo Katsui ,  Hiromi Fuke ,  Kazuhiro Saito ,  Hitoshi Iwasaki ,  Masashi Sahashi ,  Takashi Watanabe

IPC分类号： C23C14/06 ,  C23C14/14 ,  C23C14/34 ,  G11B5/39 ,  H01F10/32 ,  H01F41/18 ,  H01F41/30 ,  H01L43/12 ,  G11B5/66

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/14 ,  C23C14/3414 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/183 ,  H01F41/302 ,  H01L43/12 ,  Y10S428/90 ,  Y10T428/1121 ,  Y10T428/26 ,  Y10T428/265

摘要： A sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target, at least as a part of target texture, comprises one member selected from a group of an alloy phase and a compound phase formed between the R element and Mn. In addition, oxygen content in the target is 1 weight % or less (including 0). With such a sputtering target, an anti-ferromagnetic material film consisting of RMn alloy excellent in corrosion resistivity and thermal performance can be stabilized in its film composition and film quality. By employing the anti-ferromagnetic material film, when an exchange coupling film is formed by stacking the anti-ferromagnetic material film and the ferromagnetic material film, sufficient exchange coupling force is obtained stably. Such an exchange coupling film can be used in a magneto-resistance effect element and the like.

摘要翻译： PCT No.PCT / JP97 / 04232 Sec。 371日期：1998年7月17日 102（e）日期1998年7月17日PCT 1997年11月20日PCT公布。 公开号WO98 / 22636 日期1998年5月28日一种主要由Mn和选自Ni，Pd，Pt，Co，Rh，Ir，V，Nb，Ta，Cu，Ag，Au，Ru中的至少一种R元素组成的溅射靶， Os，Cr，Mo，W和Re。 至少作为目标结构的一部分的溅射靶包括选自由R元素和Mn之间形成的合金相和化合物相的组中的一种。 此外，靶中的氧含量为1重量％以下（包括0）。 通过这样的溅射靶，可以在其膜组成和膜质量中稳定由耐腐蚀性和耐热性优异的RMn合金构成的反铁磁性材料膜。 通过采用反铁磁材料膜，当通过堆叠反铁磁材料膜和铁磁材料膜形成交换耦合膜时，稳定地获得了充分的交换耦合力。 这种交换耦合膜可用于磁阻效应元件等。

公开(公告)号：US5962905A

公开(公告)日：1999-10-05

申请号：US931419

申请日：1997-09-16

申请人： Yuzo Kamiguchi ,  Masashi Sahashi

发明人： Yuzo Kamiguchi ,  Masashi Sahashi

IPC分类号： H01L29/66 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10 ,  H01L43/00

CPC分类号： H01L29/66984 ,  H01L29/82 ,  H01L43/08 ,  H01L43/10

摘要： A magnetoresistive element comprises an n-type emitter layer, a p-type base layer, and an n-type collector layer, the three layers being so arranged as to form a pn-junction with each other, an emitter ferromagnetic layer formed in contact with the n-type emitter layer, a base ferromagnetic layer formed in contact with the p-type base layer, a power source for applying, by way of the emitter ferromagnetic layer, a forward bias voltage between the n-type emitter layer and the p-type base layer, a power source for applying a backward bias voltage to the n-type collector layer and the p-type base layer and a power source for applying, by way of the base ferromagnetic layer, a bias voltage so as to inject minority carriers into the p-type base layer.

摘要翻译： 磁阻元件包括n型发射极层，p型基极层和n型集电极层，所述三个层被布置为彼此形成pn结，发射铁磁层形成为接触 与n型发射极层，形成为与p型基极层接触的基极铁磁层，用于通过发射极铁磁层施加在n型发射极层和 p型基极层，用于向n型集电极层和p型基极层施加反向偏置电压的电源以及通过基极铁磁层施加偏置电压的电源，以便 将少数载流子注入p型基底层。

公开(公告)号：US5583474A

公开(公告)日：1996-12-10

申请号：US248679

申请日：1994-05-25

申请人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

发明人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

IPC分类号： G05F1/40 ,  H01F5/00 ,  H01F17/00 ,  H01F27/30 ,  H01F41/00

CPC分类号： H01F17/0006 ,  H01F2017/0066 ,  H01F2017/0086 ,  Y10T29/4902

摘要： Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

公开(公告)号：US5190599A

公开(公告)日：1993-03-02

申请号：US586983

申请日：1990-09-24

申请人： Masashi Sahashi ,  Yoichi Tokai ,  Tomomi Funayama

发明人： Masashi Sahashi ,  Yoichi Tokai ,  Tomomi Funayama

IPC分类号： C22C5/04 ,  G11B5/64 ,  H01F1/00 ,  H01F1/01 ,  H01F1/03 ,  H01F10/14

CPC分类号： G11B5/653 ,  H01F1/012 ,  H01F1/0306

摘要： A magnetic memory and a magnetic alloy thereof are disclosed, which comprise a magnetic alloy whose main phase is an iso-molar compound phase, the iso-molar compound phase being represented with general expression Pt(Fe.sub.1-x Mn.sub.x)Sn where the relationship of 0

摘要翻译： 公开了一种磁记忆体及其磁性合金，它们包括主相为异摩尔化合物相的磁性合金，异摩尔化合物相以通式Pt（Fe1-x Mnx）Sn表示，其中， 0

公开(公告)号：US4959631A

公开(公告)日：1990-09-25

申请号：US250401

申请日：1988-09-28

申请人： Michio Hasegawa ,  Masashi Sahashi

发明人： Michio Hasegawa ,  Masashi Sahashi

IPC分类号： H01F17/00

CPC分类号： H01F17/0006

摘要： Disclosed is a planar inductor which has spiral conductor coil means sandwiched between ferromagnetic layers with insulating layers interposed therebetween. The spiral conductor coil means is formed of two spiral conductor coils of the same shape arranged flush with and close to each other. Moreover, the two spiral conductor coils are connected electrically to each other so that currents of different directions flow individually through the conductor coils. Furthermore, the spiral conductor coil means is sandwiched between the two ferromagnetic layers with the insulating layers therebetween, each of the ferromagnetic layers having an area greater than the combined area of the two conductor coils. In the planar inductor according to the present invention, inductance is prevented from lowering while its components are being bonded together, so that the inductance value per unit volume is increased.