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公开(公告)号：US5707256A
公开(公告)日：1998-01-13
申请号：US587756
申请日：1996-01-17
IPC分类号： H01R13/40 , H01R13/642
CPC分类号： H01R13/642
摘要： A connector for an electric vehicle in which a bus bar connecting portion of a terminal is secured and connected, in parallel, to a plate-like bus bar arranged in either a vertical or horizontal orientation. In the connector, a connector housing has a terminal accommodating chamber in the form of a substantially cylindrical space, and a rotation-preventing face is provided on the inner wall of the terminal accommodating chamber to radially and inwardly protrude from the inner wall. A body portion of the terminal is formed into a rod to be fitted into the terminal accommodating chamber. The bus bar connecting portion in the form of a plate, with a width equal to an outer diameter of the body portion, is extended from the rear end of the body portion. Two slants are formed on the body portion by partially removing the body portion along two planes intersecting perpendicularly to each other. The slants selectively abut against the rotation-preventing face when the terminal is inserted into the terminal accommodating chamber.
摘要翻译： 一种用于电动车辆的连接器，其中端子的母线连接部分被固定并并联连接到布置成垂直或水平取向的板状母线。 在连接器中，连接器壳体具有基本上为圆柱形的空间的端子容纳室，并且在端子容纳室的内壁上设置防旋转面，以从内壁径向向内突出。 端子的主体部分形成为装配到端子容纳室中的杆。 主体部分的后端延伸宽度等于主体部分的外径的板形式的汇流条连接部分。 通过沿彼此垂直相交的两个平面部分去除主体部分，在主体部分上形成两个斜面。 当端子插入端子容纳室时，斜面选择性地抵靠旋转防止面。
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公开(公告)号：US5653615A
公开(公告)日：1997-08-05
申请号：US405854
申请日：1995-03-17
IPC分类号： H01R13/05 , H01R13/11 , H01R13/17 , H01R13/187 , H01R43/16
CPC分类号： H01R43/16 , H01R13/17 , H01R13/187 , H01R13/052 , Y10T29/49201 , Y10T29/49204 , Y10T29/49218
摘要： An object of the invention is to quickly supply inexpensive large current terminals without entailing complicated metal-working process and labor. Further, another object thereof is to provide methods of metal-working such terminals. A large current male terminal is constructed by forming a hollow cylindrical electric contact part on one end of a conductive pipe, a hollow cylindrical wire crimping part on the other end thereof, and a collar between the electric contact part and the wire crimping part. The electric contact part has a substantially conical nose and is formed by squeezing one end of the conductive pipe in such a manner that the diameter of the one end is gradually reduced frontward. The wire crimping part has such an inner diameter as to allow a wire to be inserted thereinto. The collar has a diameter larger than the other parts.
摘要翻译： 本发明的目的是快速地提供廉价的大电流端子，而不需要复杂的金属加工和劳动。 此外，其另一个目的是提供金属加工这种端子的方法。 通过在导电管的一端上形成中空的圆柱形电接触部分，在另一端形成中空的圆柱形电线压接部分，以及在电接触部分和电线压接部分之间形成一个套环，构成一个大电流公端子。 电接触部分具有大致圆锥形的鼻部，并且通过以使得一端的直径逐渐向前减小的方式挤压导电管的一端而形成。 电线压接部具有允许电线插入其中的内径。 套环的直径大于其他部分。
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公开(公告)号：US5571750A
公开(公告)日：1996-11-05
申请号：US314585
申请日：1994-09-28
CPC分类号： H01S5/0425 , H01S5/164 , H01S5/0201 , H01S5/0281 , Y10S148/026 , Y10S148/095 , Y10S148/104 , Y10S148/106 , Y10S148/143 , Y10S438/945
摘要： A method for producing a semiconductor laser device includes the steps of: forming window layers on either one of a top surface of an internal structure or a reverse surface of a substrate and on light-emitting end facets of the internal structure; forming a reflection film on the light-emitting end facets; removing the window layer formed on either one of the top surface or the reverse surface by using an etchant which hardly etches the reflection film; and forming electrodes on the surface from which the window layer is removed by etching and on the other surface. Another method for producing a semiconductor laser device includes the steps of: forming window layers on light-emitting end facets of the bars; inserting the bars into an apparatus having openings for forming electrodes and a supporting portion for preventing a positional shift between the bars and the openings, and forming the electrodes on the top surfaces and the reverse surfaces of the bars; and cutting the bars into the chips.
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公开(公告)号：US5511993A
公开(公告)日：1996-04-30
申请号：US296189
申请日：1994-08-25
IPC分类号： H01R4/50 , H01R9/05 , H01R13/58 , H01R13/648 , H01R13/658
CPC分类号： H01R9/0524 , H01R13/5812 , H01R13/6593 , H01R13/6583 , H01R4/50
摘要： A connector shield wire connection structure includes a connector housing including a shield wire accommodating portion, a conductive contact element including an inclined slide portion and a hold portion corresponding to a terminal shield portion of a shield wire, the conductive contact elements being connectable to the shield portion of a connector.
摘要翻译： 连接器屏蔽线连接结构包括连接器壳体，其包括屏蔽线容纳部分，包括倾斜滑动部分的导电接触元件和对应于屏蔽线的端子屏蔽部分的保持部分，所述导电接触元件可连接到屏蔽 连接器的一部分。
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公开(公告)号：US5054031A
公开(公告)日：1991-10-01
申请号：US455574
申请日：1989-12-22
CPC分类号： H01S5/10 , H01S5/16 , H01S5/2234 , H01S5/2235 , H01S5/24
摘要： A semiconductor laser device is disclosed which comprises a semiconductor substrate having a ridge portion, the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer formed on the substrate including the ridge portion; at least one striped groove formed on the center of the ridge portion through the current blocking layer; and a multi-layered structure disposed on the current blocking layer, the multi-layered structure successively having a first current blocking layer, an active layer for laser oscillation, and a second current blocking layer; wherein at least two side grooves are symmetrically formed on both sides of the center region of the ridge portion with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.
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公开(公告)号：US4903274A
公开(公告)日：1990-02-20
申请号：US195742
申请日：1988-05-18
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device comprising a substrate with a plurality of grooves and an active layer disposed over the substrate, resulting in optical waveguides within the active layer corresponding to the grooves, wherein the grooves are disposed over the entire area of the substrate and a means for preventing the injection of current into some of the grooves that are positioned outside of the central area of the substrate is disposed whereby the other grooves positioned in the central area of the substrate consitute a laser array portion of the semiconductor laser array device.
摘要翻译： 一种半导体激光器阵列器件，包括具有多个沟槽的衬底和设置在衬底上的有源层，从而产生与沟槽对应的有源层内的光波导，其中沟槽设置在衬底的整个区域上， 用于防止将电流注入到位于基板的中心区域外部的一些凹槽中，由此位于基板的中心区域中的其它凹槽构成半导体激光器阵列器件的激光器阵列部分。
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公开(公告)号：US4815088A
公开(公告)日：1989-03-21
申请号：US105638
申请日：1987-10-05
CPC分类号： H01S5/4068
摘要： A semiconductor laser array device with a waveguide structure comprising waveguides designed such that the widths thereof gradually increase from the center waveguide to the waveguides positioned at both sides of the array portions.
摘要翻译： 一种具有波导结构的半导体激光器阵列器件，其包括设计成使得其宽度从中心波导逐渐增加到位于阵列部分两侧的波导的波导。
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公开(公告)号：US4811351A
公开(公告)日：1989-03-07
申请号：US35477
申请日：1987-04-07
CPC分类号： H01S5/028 , G02B6/122 , H01S5/4068
摘要： A semiconductor laser array device comprising a substrate; an index-waveguiding area positioned on said substrate; a Fourier-converting area, which is adjacent to said waveguiding area and in which laser lights emitted with synchronized phases from said waveguiding area undergo the Fourier-conversion, positioned on said substrate; and a reflecting mirror, which is adjacent to said Fourier-converting area and by which said converted laser lights with a 0.degree.-phase shift mode are selectively reflected so as to be incident upon said waveguiding areas.
摘要翻译： 一种半导体激光器阵列器件，包括衬底; 位于所述基板上的折射率波导区域; 傅里叶变换区域，其邻近所述波导区域，并且其中来自所述波导区域的同步相位发射的激光经历傅里叶变换，位于所述基板上; 以及反射镜，其与所述傅立叶变换区域相邻，并且所述经转换的0°相移模式的激光被选择性地反射以入射到所述波导区域。
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公开(公告)号：US4742526A
公开(公告)日：1988-05-03
申请号：US816311
申请日：1986-01-06
CPC分类号： G02B6/2804 , H01S5/4068
摘要： A semiconductor laser array device comprising an optical waveguide which is in a single mode or a multiple mode in the center portion thereof and is in a branching mode at each of both end portions thereof to form a plurality of branching waveguides which are positioned symmetrically with respect to the waveguiding direction of the laser beams and which are parallel to each other near the facets, thereby oscillating laser beams with a 0.degree.-phase shift therebetween.
摘要翻译： 一种半导体激光器阵列器件，包括在其中心部分处于单一模式或多模式的光波导，并且在其两端部分别处于分支模式，以形成多个分支波导，该分支波导相对于 到激光束的波导方向，并且在面附近彼此平行，从而在其间振荡激光束0°相移。
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70.发明授权Process for preventing melt-back in the production of aluminum-containing laser devices 失效制造含铝激光装置时防止熔融回收的方法
公开(公告)号：US4632709A
公开(公告)日：1986-12-30
申请号：US781707
申请日：1985-09-30
IPC分类号： H01L21/20 , H01L21/208 , H01S5/00
CPC分类号： H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02625 , H01L21/02628
摘要： A process for the production of semiconductor devices includes: (1) forming a thin semiconductor film containing no aluminum on a first semiconductor layer containing aluminum that is disposed on a substrate one or more (2) forming channels on said thin semiconductor film in such a manner that the channel or channels reach or go through said first semiconductor layer to expose a portion of said substrate, resulting in a channelled substrate for succeeding crystal growth thereon, and (3) producing by epitaxial growth crystalline layers on said channelled substrate by the use of a crystal growth solution having a supersaturation which is high enough to prevent said first semiconductor layer from undergoing meltback.
摘要翻译： 一种制造半导体器件的方法包括：（1）在包含铝的第一半导体层上形成不含铝的薄半导体膜，所述第一半导体层设置在基板上一个或多个（2）在所述薄半导体膜上形成沟槽， 通道或通道到达或穿过所述第一半导体层以暴露所述衬底的一部分，导致用于在其上继续晶体生长的沟道衬底，以及（3）通过使用在所述沟道衬底上的外延生长晶体层产生 具有足够高以防止所述第一半导体层经历回熔的过饱和度的晶体生长溶液。
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