公开(公告)号：US06547938B1

公开(公告)日：2003-04-15

申请号：US09526869

申请日：2000-03-16

申请人： Satoshi Matsumura ,  Kenji Yamagata

发明人： Satoshi Matsumura ,  Kenji Yamagata

IPC分类号： C25D1700

CPC分类号： H01L21/67017

摘要： This invention is to reduce the influence of a gas generated by an anodizing reaction. A silicon substrate (101) to be processed is horizontally held. A negative electrode (129) is arranged on the upper side of the silicon substrate (101), and a positive electrode (114) is brought into contact with the lower surface of the silicon substrate (101). The space between the negative electrode (129) and the silicon substrate (101) is filled with an HF solution (132). The negative electrode (129) has a number of degassing holes (130) to prevent a gas generated by the anodizing reaction from staying on the lower side of the negative electrode (129).

摘要翻译： 本发明是为了减少由阳极反应产生的气体的影响。 要处理的硅衬底（101）被水平保持。 在硅基板（101）的上侧配置有负极（129），使正极（114）与硅基板（101）的下表面接触。 负极（129）和硅衬底（101）之间的空间填充有HF溶液（132）。 负极（129）具有多个脱气孔（130），以防止阳极反应产生的气体停留在负极（129）的下侧。

公开(公告)号：US5951833A

公开(公告)日：1999-09-14

申请号：US979602

申请日：1997-11-26

申请人： Kenji Yamagata

发明人： Kenji Yamagata

IPC分类号： H01L21/306 ,  C25D11/32 ,  C25D17/00 ,  C25D17/06 ,  H01L21/00 ,  H01L21/304 ,  H01L21/3063 ,  H01L21/316 ,  H01L21/683

CPC分类号： H01L21/67086 ,  C25D11/005 ,  C25D11/32 ,  C25D17/00 ,  C25D17/06 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/31675 ,  H01L21/67028 ,  H01L21/6838 ,  C25D17/001 ,  Y10S134/902

摘要： A holder (102) made from an HF-resistant material includes annular suction pads (105, 108). The suction pad (105) is used to hold a small silicon substrate by suction, and the suction pad (108) is used to hold a large silicon substrate by suction. This makes silicon substrates with various sizes processable. A silicon substrate is held by suction by reducing a pressure in a space in a groove of the suction pad by a pump (120). An opening (103) is formed in the holder (102) so that the both surfaces of the silicon substrate are brought into contact with an HF solution (115). The silicon substrate is anodized by applying a DC voltage by using a platinum electrode (109a) as a negative electrode and a platinum electrode (109b) as a positive electrode, and thereby a substrate having a porous layer is produced.

摘要翻译： 由耐高温材料制成的支架（102）包括环形吸盘（105,108）。 吸盘（105）用于通过抽吸来保持小的硅衬底，并且吸盘（108）用于通过抽吸来容纳大的硅衬底。 这使得具有各种尺寸的硅衬底可加工。 通过泵（120）减小吸盘的凹槽中的空间中的压力，通过抽吸来保持硅衬底。 在保持器（102）中形成开口（103），使得硅衬底的两个表面与HF溶液（115）接触。 通过使用作为负极的铂电极（109a）和作为正极的铂电极（109b）施加直流电压来阳极氧化硅衬底，由此制造具有多孔层的衬底。

公开(公告)号：US5580381A

公开(公告)日：1996-12-03

申请号：US552439

申请日：1995-11-03

申请人： Kenji Yamagata

发明人： Kenji Yamagata

IPC分类号： C30B25/18 ,  H01L21/20 ,  C30B25/04

CPC分类号： H01L21/0242 ,  C30B25/18 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02645 ,  H01L21/02647

摘要： A crystal forming method comprises disposing, on a surface of a substrate or in recessed portion formed in the substrate having a surface with a low nucleation density, primary seed having a sufficient small volume to singly aggregate and a rectangular prismatic or cubic shape in which all the sides and the bottom are surrounded by an insulator in contact therewith; performing heat treatment for aggregating the primary seed to form monocrystalline seed crystal having controlled plane orientation and in-plane orientation; and selectively growing monocrystal by crystal growth treatment using the seed crystal as starting point.

摘要翻译： 一种晶体形成方法，包括在基板表面或形成在具有低成核密度的表面的基板的凹部中设置具有足够小体积的单晶聚集体和矩形棱柱形或立方体形，其中全部 侧面和底部被与其接触的绝缘体包围; 进行用于聚集初级种子的热处理以形成具有受控平面取向和面内取向的单晶晶种; 并通过晶种生长处理以晶种为起点选择性地生长单晶。

公开(公告)号：US4983539A

公开(公告)日：1991-01-08

申请号：US508490

申请日：1990-04-13

申请人： Kenji Yamagata ,  Takeshi Ichikawa

发明人： Kenji Yamagata ,  Takeshi Ichikawa

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/329 ,  H01L21/331 ,  H01L21/336 ,  H01L21/337 ,  H01L27/00 ,  H01L27/12 ,  H01L29/06 ,  H01L29/205 ,  H01L29/73 ,  H01L29/74 ,  H01L29/747 ,  H01L29/78 ,  H01L29/786 ,  H01L29/808 ,  H01S5/00

CPC分类号： H01L29/0692 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02639 ,  H01L21/02647 ,  Y10S117/913

摘要： A process for producing a semiconductor article comprises applying crystal formation treatment to a substrate having a free surface on which a nonnucleation surface exhibiting a smaller nucleation density and a nucleation surface of an amorphous material exhibiting a larger nucleation density and having a sufficiently minute area so as to allow only a single nucleus to be formed thereon are disposed next to each other whereby a semiconductor monocrystal is permitted to grow from the nucleus, the production conditions during said crystal formation treatment being varied to form semiconductor crystal regions different in their characteristics within at least part of said semiconductor monocrystal.

公开(公告)号：US4410546A

公开(公告)日：1983-10-18

申请号：US260580

申请日：1981-05-05

申请人： Kanji Noda ,  Akira Nakagawa ,  Munehiko Hirano ,  Kenji Yamagata ,  Yoichi Nakashima ,  Terumi Hachiya ,  Hiroyuki Ide ,  Akihide Koda

发明人： Kanji Noda ,  Akira Nakagawa ,  Munehiko Hirano ,  Kenji Yamagata ,  Yoichi Nakashima ,  Terumi Hachiya ,  Hiroyuki Ide ,  Akihide Koda

IPC分类号： A61K31/19

CPC分类号： A61K31/19

摘要： An antiallergic composition comprising, as the effective ingredient, a compound represented by the following general formula ##STR1## wherein R is n-butyl group or n-pentyl group, the compound being preferably supported by a carrier such as sugar, starch, gum arabic or calcium stearate.

摘要翻译： 一种抗过敏组合物，其包含作为有效成分的由以下通式表示的化合物，其中R是正丁基或正戊基，该化合物优选由载体例如糖，淀粉，阿拉伯树胶 或硬脂酸钙。