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    Enhancing Metrology Target Information Content
    61.
    发明申请
    Enhancing Metrology Target Information Content 审中-公开

    公开(公告)号：US20190178630A1

    公开(公告)日：2019-06-13

    申请号：US16132157

    申请日：2018-09-14

    Applicant: KLA-Tencor Corporation

    Inventor： Eran Amit ,  Amnon Manassen ,  Nadav Gutman

    IPC: G01B11/06 ,  G06N99/00

    Abstract: Metrology targets designs, design methods and measurement methods are provided, which reduce noise and enhance measurement accuracy. Disclosed targets comprise an additional periodic structure which is orthogonal to the measurement direction along which given target structures are periodic. For example, in addition to two or more periodic structures along each measurement direction in imaging or scatterometry targets, a third, orthogonal periodic structure may be introduced, which provides additional information in the orthogonal direction, can be used to reduce noise, enhances accuracy and enables the application of machine learning algorithms to further enhance accuracy. Signals may be analyzed slice-wise with respect to the orthogonal periodic structure, which can be integrated in a process compatible manner in both imaging and scatterometry targets.

    METHODS OF ANALYZING AND UTILIZING LANDSCAPES TO REDUCE OR ELIMINATE INACCURACY IN OVERLAY OPTICAL METROLOGY
    65.
    发明申请
    METHODS OF ANALYZING AND UTILIZING LANDSCAPES TO REDUCE OR ELIMINATE INACCURACY IN OVERLAY OPTICAL METROLOGY 审中-公开
    分析和利用景观以减少或消除在重叠光学计量学中不精确的方法

    公开(公告)号：US20160313658A1

    公开(公告)日：2016-10-27

    申请号：US15198902

    申请日：2016-06-30

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Tal Marciano ,  Barak Bringoltz ,  Evgeni Gurevich ,  Ido Adam ,  Ze'ev Lindenfeld ,  Zeng Zhao ,  Yoel Feler ,  Daniel Kandel ,  Nadav Carmel ,  Amnon Manassen ,  Nuriel Amir ,  Oded Kaminsky ,  Tal Yaziv ,  Ofer Zaharan ,  Moshe Cooper ,  Roee Sulimarski ,  Tom Leviant ,  Noga Sella ,  Boris Efraty ,  Lilach Saltoun ,  Amir Handelman ,  Eltsafon Ashwal ,  Ohad Bachar

    IPC: G03F9/00

    Abstract: Methods are provided for deriving a partially continuous dependency of metrology metric(s) on recipe parameter(s), analyzing the derived dependency, determining a metrology recipe according to the analysis, and conducting metrology measurement(s) according to the determined recipe. The dependency may be analyzed in form of a landscape such as a sensitivity landscape in which regions of low sensitivity and/or points or contours of low or zero inaccuracy are detected, analytically, numerically or experimentally, and used to configure parameters of measurement, hardware and targets to achieve high measurement accuracy. Process variation is analyzed in terms of its effects on the sensitivity landscape, and these effects are used to characterize the process variation further, to optimize the measurements and make the metrology both more robust to inaccuracy sources and more flexible with respect to different targets on the wafer and available measurement conditions.

    Abstract translation: 提供了用于导出计量度量对配方参数的部分连续依赖性的方法，分析衍生依赖性，根据分析确定计量配方，并根据确定的配方进行计量测量。 依赖性可以以景观的形式进行分析，例如灵敏度景观，其中检测到低分辨率或零误差的低灵敏度和/或点或等值线的区域，分析，数字或实验，并用于配置测量参数，硬件 并达到高测量精度。 根据其对灵敏度景观的影响分析过程变化，并且这些效应用于进一步表征过程变化，优化测量结果，使计量学对于不准确性来源更加鲁棒，并且对于不同的目标更灵活 晶圆和可用的测量条件。

    Detectable overlay targets with strong definition of center locations
    67.
    发明授权
    Detectable overlay targets with strong definition of center locations 有权
    可检测的覆盖目标，具有中心位置的强烈定义

    公开(公告)号：US09429856B1

    公开(公告)日：2016-08-30

    申请号：US14160249

    申请日：2014-01-21

    Applicant: KLA-Tencor Corporation

    Inventor： Amnon Manassen ,  Barry Loevsky

    IPC: G03F7/20 ,  H01L23/544 ,  G01B11/14

    CPC classification number: G03F7/70633 ,  G01B11/02 ,  G01B11/14 ,  G06K9/00 ,  G06K9/3216 ,  G06T7/0004 ,  H01L22/30 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An overlay target for a semiconductor device is disclosed. The overlay measurement target includes a first ring target located on a first measured layer of the semiconductor device. The first ring target includes a plurality of detectable features arranged in a circular manner having a first circumference. The overlay measurement target also includes a second ring target located on a second measured layer of the semiconductor device. The second ring target includes a plurality of detectable features arranged in a circular manner having a second circumference different from the first circumference. The displacement between a detected center of the first ring target and a detected center of the second ring target indicates an overlay error between the first measured layer and the second measured layer.

    Abstract translation: 公开了一种用于半导体器件的覆盖目标。 覆盖测量目标包括位于半导体器件的第一测量层上的第一环目标。 第一环目标包括以圆形方式布置的具有第一圆周的多个可检测特征。 覆盖测量目标还包括位于半导体器件的第二测量层上的第二环目标。 第二环目标包括以圆形方式布置的多个可检测特征，其具有不同于第一圆周的第二圆周。 检测到的第一环目标的中心与第二环目标的检测中心之间的位移表示第一测量层与第二测量层之间的重叠误差。

    Method for estimating and correcting misregistration target inaccuracy
    68.
    发明授权
    Method for estimating and correcting misregistration target inaccuracy 有权
    估计和纠正不对准目标误差的方法

    公开(公告)号：US09329033B2

    公开(公告)日：2016-05-03

    申请号：US13834915

    申请日：2013-03-15

    Applicant: KLA-TENCOR CORPORATION

    Inventor： Eran Amit ,  Dana Klein ,  Guy Cohen ,  Amir Widmann ,  Nimrod Shuall ,  Amnon Manassen ,  Nuriel Amir

    IPC: G01N37/00 ,  G01B21/04 ,  G03F7/20 ,  G06F11/30

    CPC classification number: G01B21/042 ,  G03F7/70625 ,  G03F7/70633

    Abstract: Aspects of the present disclosure describe systems and methods for calibrating a metrology tool by using proportionality factors. The proportionality factors may be obtained by measuring a substrate under different measurement conditions. Then calculating the measured metrology value and one or more quality merits. From this information, proportionality factors may be determined. Thereafter the proportionality factors may be used to quantify the inaccuracy in a metrology measurement. The proportionality factors may also be used to determine an optimize measurement recipe. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    Abstract translation: 本公开的方面描述了通过使用比例因子来校准度量工具的系统和方法。 可以通过在不同测量条件下测量衬底来获得比例因子。 然后计算测量的度量值和一个或多个质量优点。 根据该信息，可以确定比例因子。 此后，可以使用比例因子来量化度量测量中的不精确度。 比例因子也可用于确定优化测量配方。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    Measurement of critical dimension and scanner aberration utilizing metrology targets
    69.
    发明授权
    Measurement of critical dimension and scanner aberration utilizing metrology targets 有权
    使用计量目标测量临界尺寸和扫描仪像差

    公开(公告)号：US09255787B1

    公开(公告)日：2016-02-09

    申请号：US14160217

    申请日：2014-01-21

    Applicant: KLA-Tencor Corporation

    Inventor： Amnon Manassen ,  Barry Loevsky

    IPC: G06K9/00 ,  G01B11/02 ,  G06T7/00

    CPC classification number: G03F7/70633 ,  G01B11/02 ,  G01B11/14 ,  G06K9/00 ,  G06K9/3216 ,  G06T7/0004 ,  H01L22/30 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Metrology targets and method of using the metrology targets for measurement of critical dimension, overlay or scanner aberration are disclosed. A target may include an unresolved grid having a plurality of lines spaced equally apart from each other according to a pre-determined pitch distance and at least one resolved feature tilted at an angle with respect to the unresolved grid. The method may indentify multiple regions of interest (ROIs) and determine a series of center points between the ROIs as the ROIs are being shifted. Critical dimension, overlay or scanner aberration may be calculated by analyzing the series of center points between the ROIs.

    Abstract translation: 公开了使用度量目标测量关键尺寸，叠加或扫描仪像差的计量目标和方法。 目标可以包括根据预定的间距距离彼此间隔相等的多条线的未解决的网格，以及相对于未解决的网格以一定角度倾斜的至少一个已解析的特征。 该方法可以识别多个感兴趣区域（ROI），并且当ROI被移动时，确定ROI之间的一系列中心点。 可以通过分析ROI之间的一系列中心点来计算关键尺寸，重叠或扫描仪像差。

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