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76 条记录 (耗时 0.04 秒)

    MOS transistor with laser-patterned metal gate, and method for making the same
    61.
    发明申请
    MOS transistor with laser-patterned metal gate, and method for making the same 有权

    公开(公告)号：US20060211187A1

    公开(公告)日：2006-09-21

    申请号：US11203563

    申请日：2005-08-11

    申请人： Criswell Choi ,  Joerg Rockenberger ,  J. MacKenzie ,  Christopher Gudeman

    发明人： Criswell Choi ,  Joerg Rockenberger ,  J. MacKenzie ,  Christopher Gudeman

    IPC分类号： H01L21/8234

    CPC分类号： H01L21/32131 ,  H01L21/28123 ,  H01L21/84 ,  H01L27/1292 ,  H01L29/66757

    摘要： A MOS transistor with a laser-patterned metal gate, and methods for its manufacture. The method generally includes forming a layer of metal-containing material on a dielectric film, wherein the dielectric film is on an electrically functional substrate comprising an inorganic semiconductor; laser patterning a metal gate from the metal-containing material layer; and forming source and drain terminals in the inorganic semiconductor in locations adjacent to the metal gate. The transistor generally includes an electrically functional substrate; a dielectric film on at least portions of the electrically functional substrate; a laser patterned metal gate on the dielectric film; and source and drain terminals comprising a doped inorganic semiconductor layer adjacent to the metal gate. The present invention advantageously provides MOS thin film transistors having reliable electrical characteristics quickly, efficiently, and/or at a low cost by eliminating one or more conventional photolithographic steps.

    MOS transistor with laser-patterned metal gate, and method for making the same
    64.
    发明授权
    MOS transistor with laser-patterned metal gate, and method for making the same 有权
    具有激光图案化金属栅极的MOS晶体管及其制造方法

    公开(公告)号：US08461628B2

    公开(公告)日：2013-06-11

    申请号：US11203563

    申请日：2005-08-11

    申请人： Criswell Choi ,  Joerg Rockenberger ,  J. Devin MacKenzie ,  Christopher Gudeman

    发明人： Criswell Choi ,  Joerg Rockenberger ,  J. Devin MacKenzie ,  Christopher Gudeman

    IPC分类号： H01L29/66 ,  H01L21/336 ,  H01L21/8234 ,  H01L29/772

    CPC分类号： H01L21/32131 ,  H01L21/28123 ,  H01L21/84 ,  H01L27/1292 ,  H01L29/66757

    摘要： A MOS transistor with a laser-patterned metal gate, and methods for its manufacture. The method generally includes forming a layer of metal-containing material on a dielectric film, wherein the dielectric film is on an electrically functional substrate comprising an inorganic semiconductor; laser patterning a metal gate from the metal-containing material layer; and forming source and drain terminals in the inorganic semiconductor in locations adjacent to the metal gate. The transistor generally includes an electrically functional substrate; a dielectric film on at least portions of the electrically functional substrate; a laser patterned metal gate on the dielectric film; and source and drain terminals comprising a doped inorganic semiconductor layer adjacent to the metal gate. The present invention advantageously provides MOS thin film transistors having reliable electrical characteristics quickly, efficiently, and/or at a low cost by eliminating one or more conventional photolithographic steps.

    摘要翻译： 具有激光图案化金属栅极的MOS晶体管及其制造方法。 该方法通常包括在电介质膜上形成含金属材料层，其中电介质膜位于包含无机半导体的电功能基底上; 激光从含金属材料层图案化金属栅极; 以及在与金属栅极相邻的位置的无机半导体中形成源极和漏极端子。 晶体管通常包括电功能基板; 在所述电功能基板的至少一部分上的介电膜; 电介质膜上的激光图案化金属栅极; 源极和漏极端子包括与金属栅极相邻的掺杂的无机半导体层。 本发明有利地通过消除一个或多个常规光刻步骤来快速，有效地和/或以低成本提供具有可靠电特性的MOS薄膜晶体管。

    Print Processing for Patterned Conductor, Semiconductor and Dielectric Materials
    65.
    发明申请
    Print Processing for Patterned Conductor, Semiconductor and Dielectric Materials 有权
    图案导体，半导体和电介质材料的印刷加工

    公开(公告)号：US20090065776A1

    公开(公告)日：2009-03-12

    申请号：US12114741

    申请日：2008-05-02

    申请人： Erik SCHER ,  Steven Molesa ,  Joerg Rockenberger ,  Arvind Kamath ,  Ikuo Mori

    发明人： Erik SCHER ,  Steven Molesa ,  Joerg Rockenberger ,  Arvind Kamath ,  Ikuo Mori

    IPC分类号： H01L29/04 ,  C08L83/00 ,  H01L29/06 ,  H01L29/16 ,  H01L21/208

    CPC分类号： C09D5/24 ,  C09D11/101 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01B3/02 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28008 ,  H01L27/1292 ,  H01L29/6675 ,  H01L29/78696 ,  Y10T428/24802

    摘要： Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.

    摘要翻译： 实施例涉及从含有材​​料前体的油墨印刷特征。 在一些实施例中，材料包括电活性材料，例如半导体，金属或其组合。 在另一个实施例中，该材料包括电介质。 这些实施例提供改进的印刷工艺条件，其允许更精确地控制印刷线或其它特征的形状，轮廓和尺寸。 组合物和/或方法通过增加油墨中组分的粘度和质量负载来改善对钉扎的控制。 因此，示例性方法包括在基板上以图案印刷包含材料前体和溶剂的油墨; 以图案沉淀前体以形成钉扎线; 基本上蒸发溶剂以形成由钉扎线限定的材料前体的特征; 并将材料前体转化成图案化材料。

    Printed dopant layers
    69.
    发明申请
    Printed dopant layers 有权
    印刷掺杂剂层

    公开(公告)号：US20080044964A1

    公开(公告)日：2008-02-21

    申请号：US11888949

    申请日：2007-08-03

    申请人： Arvind Kamath ,  James Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

    发明人： Arvind Kamath ,  James Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

    IPC分类号： H01L21/00 ,  H01L21/311

    CPC分类号： H01L21/316 ,  H01L21/02211 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/3165 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/66757 ,  H01L29/78621

    摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

    摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

    Printed, self-aligned, top gate thin film transistor
    70.
    发明申请
    Printed, self-aligned, top gate thin film transistor 有权
    印刷，自对准，顶栅薄膜晶体管

    公开(公告)号：US20070287237A1

    公开(公告)日：2007-12-13

    申请号：US11818078

    申请日：2007-06-12

    申请人： Joerg Rockenberger ,  James Cleeves ,  Arvind Kamath

    发明人： Joerg Rockenberger ,  James Cleeves ,  Arvind Kamath

    IPC分类号： H01L21/84 ,  H01L21/00

    CPC分类号： H01L29/7866 ,  B82Y10/00 ,  H01L27/1248 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78681 ,  H01L29/7869

    摘要： A self-aligned top-gate thin film transistor (TFT) and a method of forming such a thin film transistor, by forming a semiconductor thin film layer; printing a doped glass pattern thereon, a gap in the doped glass pattern defining a channel region of the TFT; forming a gate electrode on or over the channel region, the gate electrode comprising a gate dielectric film and a gate conductor thereon; and diffusing a dopant from the doped glass pattern into the semiconductor thin film layer.

    摘要翻译： 一种自对准顶栅薄膜晶体管（TFT）和通过形成半导体薄膜层形成这种薄膜晶体管的方法; 在其上印刷掺杂的玻璃图案，所述掺杂玻璃图案中的间隙限定所述TFT的沟道区域; 在沟道区域上或上方形成栅电极，栅电极在其上包括栅介质膜和栅极导体; 并且将掺杂剂从掺杂的玻璃图案扩散到半导体薄膜层中。