公开(公告)号：US06472328B2

公开(公告)日：2002-10-29

申请号：US09896773

申请日：2001-06-29

申请人： Terry Gilton ,  Casey Kurth ,  Russ Meyer ,  Phillip G. Wald

发明人： Terry Gilton ,  Casey Kurth ,  Russ Meyer ,  Phillip G. Wald

IPC分类号： H01L21302

CPC分类号： H01L21/02052 ,  H01L21/28512 ,  H01L21/28525 ,  H01L21/76802 ,  H01L21/76805 ,  Y10S438/953

摘要： A method of forming an electrical contact to semiconductive material includes forming an insulative layer over a contact area of semiconductive material. A contact opening is etched through the insulative layer to the semiconductive material contact area. Such etching changes an outer portion of the semiconductive material exposed by the etching. The change is typically in the form of modifying crystalline structure of only an outer portion from that existing prior to the etch. The changed outer portion of the semiconductive material is etched substantially selective relative to semiconductive material therebeneath which is unchanged. The preferred etching chemistry is a tetramethyl ammonium hydroxidde solution. A conductive material within the contact opening is formed in electrical connection with the semiconductive material. In another aspect, the changed outer portion is etched with a basic solution regardless of selectivity in the etch relative to semiconductive material therebeneath which is unchanged by the contact opening etch. The preferred conductive material is conductively doped semiconductive material which is formed in the contact opening to be in contact with semiconductive material which is unchanged. Further, the conductive material within the contact opening is preferably void of any silicide material.

摘要翻译： 形成与半导体材料的电接触的方法包括在半导体材料的接触区域上形成绝缘层。 通过绝缘层将接触开口蚀刻到半导体材料接触区域。 这种蚀刻改变由蚀刻暴露的半导体材料的外部部分。 该变化通常是仅在蚀刻之前从存在的外部部分修改晶体结构的形式。 相对于其下的半导体材料，半导体材料的改变的外部部分被大大选择性地蚀刻，其不变。 优选的蚀刻化学性质是四甲基氢氧化铵溶液。 接触开口内的导电材料形成为与半导体材料电连接。 在另一方面，改变的外部部分用碱性溶液进行蚀刻，而不管蚀刻中相对于半导体材料的选择性如何，其中接触开口蚀刻不变。 优选的导电材料是形成在接触开口中以与半导体材料接触的导电掺杂半导体材料，其不变。 此外，接触开口内的导电材料优选不含任何硅化物材料。

公开(公告)号：US06344364B1

公开(公告)日：2002-02-05

申请号：US09645057

申请日：2000-08-23

申请人： Terry Gilton

发明人： Terry Gilton

IPC分类号： H01L21302

CPC分类号： H01L22/26

摘要： In one aspect, the invention includes a method of etching, comprising: a) forming a material over a substrate, the material comprising a lower portion near the substrate and an upper portion above the lower portion; b) providing a quantity of detectable atoms within the material, the detectable atoms being provided at a different concentration in the lower portion than in the upper portion; c) etching into the material and forming etching debris; and d) detecting the detectable atoms in the debris. In another aspect, the invention includes a method of etching, comprising: a) providing a semiconductor wafer substrate, the substrate having a center and an edge; b) forming a material over the substrate, the material comprising detectable atoms; c) etching into the material and forming etching debris; d) detecting the detectable atoms in the debris; and e) estimating a degree of center-to-edge uniformity of the etching from the detecting.

摘要翻译： 一方面，本发明包括蚀刻方法，包括：a）在衬底上形成材料，所述材料包括在衬底附近的下部和在下部上方的上部; b）在材料内提供一定量的可检测原子，可检测的原子在下部分中提供的浓度不同于上部; c）蚀刻到材料中并形成蚀刻碎片; 和d）检测碎片中的可检测原子。 另一方面，本发明包括一种蚀刻方法，包括：a）提供半导体晶片衬底，所述衬底具有中心和边缘; b）在衬底上形成材料，该材料包含可检测的原子; c）蚀刻到材料中并形成蚀刻碎片; d）检测碎片中的可检测原子; 以及e）从所述检测估计所述蚀刻的中心到边缘均匀度的程度。

公开(公告)号：US5188723A

公开(公告)日：1993-02-23

申请号：US867345

申请日：1992-04-13

申请人： Chris C. Yu ,  Gurtej S. Sandhu ,  Terry Gilton

发明人： Chris C. Yu ,  Gurtej S. Sandhu ,  Terry Gilton

IPC分类号： H01L21/288 ,  H05K3/06 ,  H05K3/10 ,  H05K3/24

CPC分类号： H01L21/2885 ,  H05K3/241 ,  H05K3/062 ,  H05K3/108

摘要： A process for selectively electrodepositing a pattern of metal such as copper on a substrate comprises the deposition of two successive layers over the entire substrate, photolithographic patterning of the upper layer, and placement of the exposed part of the first deposited layer to a lower surface potential then the patterned second layer. The metal is then deposited under a periodical modulated voltage signal that is adjusted in reference to the reduction potential of the metal so that any metal deposited on the exposed part of the first layer during the positive duty cycle of the signal is removed during the negative duty cycle while little or none of the metal deposited on the second layer is removed due to the second layer higher surface potential. The remaining exposed part of the first layer is etched away after the electrodeposition process is terminated.

摘要翻译： 用于在衬底上选择性地电沉积诸如铜的金属图案的方法包括在整个衬底上沉积两个连续的层，上层的光刻图案，以及将第一沉积层的暴露部分放置到较低的表面电位 然后是图案化的第二层。 然后将金属沉积在相对于金属的还原电位进行调节的周期性调制电压信号下，使得在负值期间去除在信号的正占空比期间沉积在第一层的暴露部分上的任何金属 循环，而由于第二层较高的表面电位，很少或没有沉积在第二层上的金属被去除。 在电沉积过程终止后，第一层的剩余暴露部分被蚀刻掉。

公开(公告)号：US07777287B2

公开(公告)日：2010-08-17

申请号：US11484706

申请日：2006-07-12

申请人： Terry Gilton

发明人： Terry Gilton

IPC分类号： H01L31/232

CPC分类号： G01N21/75 ,  B01L3/5027 ,  G01N21/253 ,  G01N21/274 ,  G01N21/77

摘要： An analytical system-on-a-chip can be used as an analytical imaging device, for example, for detecting the presence of a chemical compound. A layer of analytical material is formed on a transparent layer overlying a solid state image sensor. The analytical material can react in known ways with at least one reactant to block light or to allow light to pass through to the array. The underlying sensor array, in turn, can process the presence, absence or amount of light into a digitized signal output. The system-on-a-chip may also include software that can detect and analyze the output signals of the device.

摘要翻译： 分析片上系统可用作分析成像装置，例如用于检测化合物的存在。 在覆盖固态图像传感器的透明层上形成分析材料层。 分析材料可以以已知方式与至少一种反应物反应以阻挡光或允许光通过阵列。 底层传感器阵列又可以将光的存在，不存在或数量处理成数字化的信号输出。 片上系统还可以包括可以检测和分析设备的输出信号的软件。

公开(公告)号：US20070158302A1

公开(公告)日：2007-07-12

申请号：US11711304

申请日：2007-02-27

申请人： Terry Gilton

发明人： Terry Gilton

IPC分类号： C03C25/68 ,  H01L21/302 ,  C03C15/00 ,  B44C1/22 ,  C23F1/00

CPC分类号： H01L21/6715 ,  G03F7/423 ,  G03F7/427 ,  H01L21/02054 ,  H01L21/31133 ,  H01L21/6708 ,  Y10S438/948

摘要： A system for removing resist from a substrate is configured to apply an ozonated resist stripper to a resist that is to be removed, as well as to direct another gas toward the resist. In a resist removal method, a resist stripper that includes ozone is applied to a resist and another gas is directed toward the resist. Direction of a gas other than ozone at least partially toward the resist may facilitate removal of the resist, such as by causing movement in the resist stripper.

摘要翻译： 用于从基板去除抗蚀剂的系统被配置为将臭氧化抗蚀剂剥离剂施加到待除去的抗蚀剂上，并且将另一种气体引导到抗蚀剂。 在抗蚀剂去除方法中，将包含臭氧的抗蚀剂剥离器施加到抗蚀剂上，而另一种气体被引向抗蚀剂。 至少部分地朝向抗蚀剂的除了臭氧之外的气体的方向可以有助于去除抗蚀剂，例如通过引起抗蚀剂剥离器中的移动。

公开(公告)号：US20070128792A1

公开(公告)日：2007-06-07

申请号：US11700086

申请日：2007-01-31

申请人： Terry Gilton

发明人： Terry Gilton

IPC分类号： H01L21/82 ,  H01L21/8242 ,  H01L29/94

CPC分类号： G11C13/0004 ,  G11C11/56 ,  G11C11/5678 ,  G11C17/14 ,  H01L45/085 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144

摘要： A programmable multiple data state memory cell including a first electrode layer formed from a first conductive material, a second electrode layer formed from a second conductive material, and a first layer of a metal-doped chalcogenide material disposed between the first and second electrode layers. The first layer providing a medium in which a conductive growth can be formed to electrically couple together the first and second electrode layers. The memory cell further includes a third electrode layer formed from a third conductive material, and a second layer of a metal-doped chalcogenide material disposed between the second and third electrode layers, the second layer providing a medium in which a conductive growth can be formed to electrically couple together the second and third electrode layers.

公开(公告)号：US20060254277A1

公开(公告)日：2006-11-16

申请号：US11452185

申请日：2006-06-13

申请人： Terry Gilton

发明人： Terry Gilton

IPC分类号： F01K23/06

CPC分类号： F01K27/005

摘要： A rotatable micro-machine is comprised of a solvent reservoir, a porous evaporation region and a channel connecting the solvent reservoir to the evaporation region. The evaporation region may be constructed of capillary paths that enable a capillary action which pulls solvent from the channel so as to enable a flow of solvent from the reservoir to the evaporation region through the channel. A rotatable member has portions in communication with the channel so as to be rotated by the flow. In one embodiment, the rotatable member may be a component of a micro-turbine generator. A system may be comprised of the rotatable micro-machine in combination with at least one electrical circuit. The porous region may be positioned to receive heat from the circuit. That may be accomplished in several ways; the evaporation region may be formed adjacent to the circuit, the evaporation region may be fabricated on the side of a die that is opposite of the side of the die carrying the circuit, or the reservoir, micro-turbine generator, evaporation region, and channel may be fabricated on one die and the circuit fabricated on another die. The two dies may then be connected to one another by a heat transferring adhesive with the evaporation region proximate to the circuit. Methods of operating a rotatable micro-machine are also disclosed. Because of the rules governing abstracts, this abstract should not be used in construing the claims.

公开(公告)号：US20060239062A1

公开(公告)日：2006-10-26

申请号：US11109946

申请日：2005-04-20

申请人： Jun Liu ,  Terry Gilton

发明人： Jun Liu ,  Terry Gilton

IPC分类号： G11C11/00

CPC分类号： G11C11/38 ,  G11C13/0011 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2211/5614

摘要： An SRAM memory device having improved stability including two series connected devices, at least one of the devices being a chalcogenide device exhibiting differential negative resistance characteristics. One of the two devices serves as the load of the other. A switch is provided to bias a middle input node and switch the memory device between two logic states.

公开(公告)号：US20060234167A1

公开(公告)日：2006-10-19

申请号：US11452830

申请日：2006-06-13

申请人： Trung Doan ,  Terry Gilton

发明人： Trung Doan ,  Terry Gilton

IPC分类号： G03F7/40

CPC分类号： G03F7/322 ,  G03F7/36

摘要： The invention includes a process whereby a solvent is utilized to remove soluble portions of a resist, and subsequently the solvent can be removed with a gas-fortified liquid. In particular aspects, the gas-fortified liquid emits bubbles during the removal of the solvent. Additionally, the gas-fortified liquid can be utilized to remove residual resist scum, and in such aspects the gas-fortified liquid can emit bubbles during the scum removal.

摘要翻译： 本发明包括使用溶剂去除抗蚀剂的可溶部分的方法，随后用气体强化液体除去溶剂。 在特定方面，气体强化液体在除去溶剂期间会发出气泡。 此外，气体强化液体可用于去除残留的抗蚀剂浮渣，并且在这些方面，气体强化液体可以在浮渣期间发出气泡。

公开(公告)号：US20060183322A1

公开(公告)日：2006-08-17

申请号：US11394971

申请日：2006-03-30

申请人： Gurtej Sandhu ,  Garo Derderian ,  Guy Blalock ,  Terry Gilton

发明人： Gurtej Sandhu ,  Garo Derderian ,  Guy Blalock ,  Terry Gilton

IPC分类号： H01L21/44

CPC分类号： C23C16/45544 ,  C23C16/44 ,  C23C16/45527 ,  C23C16/45534 ,  C30B25/02 ,  C30B25/18

摘要： A deposition method includes, at a first temperature, contacting a substrate with a surface activation agent and adsorbing a first layer over the substrate. At a second temperature greater than the first temperature, the first layer may be contacted with a first precursor, chemisorbing a second layer at least one monolayer thick over the substrate. The first layer may enhance a chemisorption rate of the first precursor compared to the substrate without the surface activation agent adsorbed thereon. One deposition apparatus includes a deposition chamber with a precursor gas dispenser in a contacting zone and a cooling gas dispenser in a cooling zone. A substrate chuck moves by linear translational motion from the contacting zone to the cooling zone. The substrate chuck includes a substrate lift that positions a deposition substrate at an elevation above a heated surface of the substrate chuck when dispensing a cooling gas or surface activation agent. Another deposition apparatus includes a cooling chamber with a cooled substrate chuck and a contacting chamber with a heated substrate chuck. The contacting chamber also has a precursor gas dispenser and the heated substrate chuck includes a substrate lift. A robotic substrate handler moves a substrate from the cooled substrate chuck to the heated substrate chuck.