摘要:
In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.
摘要:
A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities RS, RP and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要:
Two phase modulators or polarizing elements are employed to modulate the polarization of an interrogating radiation beam before and after the beam has been modified by a sample to be measured. Radiation so modulated and modified by the sample is detected and up to 25 harmonics may be derived from the detected signal. The up to 25 harmonics may be used to derive ellipsometric and system parameters, such as parameters related to the angles of fixed polarizing elements, circular deattenuation, depolarization of the polarizing elements and retardances of phase modulators. A portion of the radiation may be diverted for detecting sample tilt or a change in sample height. A cylindrical objective may be used for focusing the beam onto the sample to illuminate a circular spot on the sample. The above-described self-calibrating ellipsometer may be combined with another optical measurement instrument such as a polarimeter, a spectroreflectometer or another ellipsometer to improve the accuracy of measurement and/or to provide calibration standards for the optical measurement instrument. The self-calibrating ellipsometer as well as the combined system may be used for measuring sample characteristics such as film thickness and depolarization of radiation caused by the sample.
摘要:
A polarized sample beam of broadband radiation is focused onto the surface of a sample and the radiation modified by the sample is collected by means of a mirror system in different planes of incidence. The sample beam focused to the sample has a multitude of polarization states. The modified radiation is analyzed with respect to a polarization plane to provide a polarimetric spectrum. Thickness and refractive information may then be derived from the spectrum. Preferably the polarization of the sample beam is altered only by the focusing and the sample, and the analyzing is done with respect to a fixed polarization plane. In the preferred embodiment, the focusing of the sample beam and the collection of the modified radiation are repeated employing two different apertures to detect the presence or absence of a birefringence axis in the sample. In another preferred embodiment, the above-described technique may be combined with ellipsometry for determining the thicknesses and refractive indices of thin films.
摘要:
A surface height detection and positioning device for use in a surface inspection system. An incident beam of light impinges obliquely upon the surface, and a position detector is disposed to receive light reflected from the surface. The position detector has a sensitivity characteristic graded along a direction transverse to the surface, so that the output of the position detector is used to determine a height of the surface. The device can be incorporated into a particle detection system that scans patterned wafers with obliquely incident light to search for particles with a particle detector positioned to receive scattered light. In one embodiment, the position detector can have a width that is graded along the direction transverse to the surface, so that a scan line on the surface that is focused upon the position detector crosses the width of that detector in a time that varies as a function of the height of the surface. This time can be measured as an electrical pulse from the position detector that can be used for various purposes, including adjusting the height of the surface during scanning. In another embodiment, the position detector can have a periodic variance in light sensitivity that is graded, so that varying a height of the surface varies a phase of the output from the position detector.
摘要:
The position detector has a sensitivity characteristic graded along a direction transverse to the surface, so that the output of the position detector is used to determine a height of the surface. A surface height detection and positioning device for use in a surface inspection system. An incident beam of light impinges obliquely upon the surface, and a position detector is disposed to receive specularly reflected light, producing a plurality of electrical signals, with a mechanical window, defining an aperture, placed in front of the detector. The aperture's width, along the scan direction, is of sufficient size so as to create a train of signals from each of the plurality of electrical signals, having a frequency equal to the scan frequency. These electrical signals carry information responsive to both the position of reflected beam impinging on the detector and the beam's intensity and are, in turn, related to a height of the surface. To abrogate information responsive to intensity variations at the position sensitive detector, an electronic circuit is employed which determines the sum and the difference of the plurality of signals relating to wafer height and beam intensity, producing a summed signal and a difference signal respectively. The difference signal is then divided by the summed signal, thereby producing a normalized signal which represents the height of the wafer surface without regards to these reflected beam intensity variations. These signals are synchronized to the scan frequency which facilitates removing unwanted signals resulting from thermal drifts and ambient light.
摘要:
An ultrasound high velocity flow measurement apparatus uses cross-correlation between consecutive echoes of coded pulses which are matched filtered at the receiver to determine velocity profiles of flowing blood. Because coded pulses are used, the interval between two pulses can be made arbitrarily small, effectively removing the peak velocity limitation.
摘要:
A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.
摘要:
In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.
摘要:
In an optical scanning system for detecting particles and pattern defects on a sample surface, a light beam is focused to an illuminated spot on the surface and the spot is scanned across the surface along a scan line. A detector is positioned adjacent to the surface to collect scattered light from the spot where the detector includes a one- or two-dimensional array of sensors. Light scattered from the illuminated spot at each of a plurality of positions along the scan line is focused onto a corresponding sensor in the array. A plurality of detectors symmetrically placed with respect to the illuminating beam detect laterally and forward scattered light from the spot. The spot is scanned over arrays of scan line segments shorter than the dimensions of the surface. A bright field channel enables the adjustment of the height of the sample surface to correct for errors caused by height variations of the surface. Different defect maps provided by the output of the detectors can be compared to identify and classify the defects. The imaging function of the array of sensors combines the advantages of a scanning system and an imaging system while improving signal/background ratio of the system.