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    METHOD AND DEVICE OF TRANSMITTING AND PARSING DATA IN WIRELESS COMMUNICATION NETWORK
    62.
    发明申请
    METHOD AND DEVICE OF TRANSMITTING AND PARSING DATA IN WIRELESS COMMUNICATION NETWORK 有权
    在无线通信网络中发送和分配数据的方法和设备

    公开(公告)号：US20100008350A1

    公开(公告)日：2010-01-14

    申请号：US12438210

    申请日：2007-08-22

    申请人： Tao Yang ,  Mingli You ,  Jin Liu ,  Pingping Wen

    发明人： Tao Yang ,  Mingli You ,  Jin Liu ,  Pingping Wen

    IPC分类号： H04W4/00 ,  H04L12/56 ,  H04J3/24

    CPC分类号： H04W28/06 ,  H04L69/22

    摘要： The present invention provides a method and corresponding device of processing and parsing a to-be-transmitted data packet in a communication network, such as a LTE system. A sub-header that is used for a header portion of a transmitted data packet is generated for each component data packet constituting the transmitted data packet, containing: original data packet ID for indicating an original data packet which the component data packet belongs to; segmentation processing ID for indicating times of segmentation happened to the original data packet in order to the component data packet, and a data segment which said component data packet belongs to after each segmentation; data amount IF for indicating a data amount of a data portion of the data packet. With the technical solution provided by the present invention, the header structure definition of a data packet is optimized, and the transmission resource utilization efficiency is improved.

    摘要翻译： 本发明提供了在诸如LTE系统的通信网络中处理和解析待发送数据分组的方法和对应的装置。 针对构成发送数据分组的每个分量数据分组产生用于发送数据分组的报头部分的子报头，其中包含：用于指示分量数据分组所属的原始数据分组的原始数据分组ID; 分段处理ID，用于指示原始数据分组发生的分段时间，以便分量数据分组，以及每个分割后所述分量数据分组所属的数据段; 用于指示数据分组的数据部分的数据量的数据量IF。 利用本发明提供的技术方案，优化了数据分组的报头结构定义，提高了传输资源的利用效率。

    Method and apparatus for computer-aided determination of viewer's gaze direction
    63.
    发明授权
    Method and apparatus for computer-aided determination of viewer's gaze direction 失效
    用于计算机辅助确定观察者视线方向的方法和装置

    公开(公告)号：US07538744B1

    公开(公告)日：2009-05-26

    申请号：US10129217

    申请日：2000-10-27

    申请人： Jin Liu ,  Siegmund Pastoor

    发明人： Jin Liu ,  Siegmund Pastoor

    IPC分类号： G09G5/00 ,  A61B3/10

    CPC分类号： G06F3/013

    摘要： The corneal reflex method is used to detect the current direction of view (VD) of a user (UE) to perform specifically selected functions on a computer. Eye vectors (EV) can be detected between the pupil center (ZP) and reflection points (RP) on the cornea (CA) that can be associated with a fixation point (FP) on a computer screen using infrared light (IRS). The association is produced as a function of the direction of view (VDF), so the relationship is detected during an initial calibration (C) by a referenced user (RE) to develop a set of reference eye vectors (EVR). A shorter self-balancing recalibration (RC) is then carried out for each subsequent user (UE). A mapping function (MF) is detected during the recalibration (RC) so that the individual eye vectors (EVU) can be converted to the reference eye vectors (EVR) by the mapping function. The recalibration (RC) can take place without the user (UE) realizing it. The method is useful in medical diagnostics, psycho-optical examinations and eye-controlled interaction with multimedia computers.

    摘要翻译： 角膜反射方法用于检测用户（UE）在计算机上执行特定选择的功能的当前方向（VD）。 可以在使用红外光（IRS）的计算机屏幕上可以与可以与计算机屏幕上的注视点（FP）相关联的角膜（CA）上的瞳孔中心（ZP）和反射点（RP）之间检测眼矢量（EV）。 根据观察方向（VDF）产生关联，因此在参考用户（RE）的初始校准（C）期间检测关系以开发一组参考眼矢量（EVR）。 然后对每个后续用户（UE）执行较短的自平衡重新校准（RC）。 在重新校准（RC）期间检测到映射函数（MF），使得各个眼矢量（EVU）可以通过映射函数转换为参考眼矢量（EVR）。 重新校准（RC）可以在用户（UE）实现的情况下进行。 该方法在医学诊断，心理光学检查和与多媒体计算机的眼睛控制的交互中是有用的。

    Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch
    65.
    发明申请
    Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch 有权
    在具有大晶格失配的衬底上形成松散半导体缓冲层的方法

    公开(公告)号：US20050164436A1

    公开(公告)日：2005-07-28

    申请号：US10865433

    申请日：2004-06-10

    申请人： Jin Liu ,  Dong Sohn ,  Liang Hsia

    发明人： Jin Liu ,  Dong Sohn ,  Liang Hsia

    IPC分类号： C30B29/52 ,  H01L21/20 ,  H01L29/10 ,  H01L21/338 ,  C30B1/00 ,  H01L21/36

    CPC分类号： C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/0262 ,  H01L29/1054

    摘要： A method of forming a relaxed silicon—germanium layer for use as an underlying layer for a subsequent, overlying tensile strain silicon layer, has been developed. The method features initial growth of a underlying first silicon—germanium layer on a semiconductor substrate, compositionally graded to feature the largest germanium content at the interface of the first silicon—germanium layer and the semiconductor substrate, with the level of germanium decreasing as the growth of the graded first silicon—germanium layer progresses. This growth sequence allows the largest lattice mismatch and greatest level of threading dislocations to be present at the bottom of the graded silicon—germanium layer, with the magnitude of lattice mismatch and threading dislocations decreasing as the growth of the graded silicon—germanium layer progresses. In situ growth of an overlying silicon—germanium layer featuring uniform or non—graded germanium content, results in a relaxed silicon—germanium layer with a minimum of dislocations propagating from the underlying graded silicon—germanium layer. In situ growth of a silicon layer results in a tensile strain, low defect density layer to be used for MOSFET device applications.

    摘要翻译： 已经开发了形成用于随后的上覆拉伸应变硅层的下层的松弛硅锗层的方法。 该方法的特征在于半导体衬底上的底层第一硅 - 锗层的初始生长，其组成分级以在第一硅 - 锗层和半导体衬底的界面处具有最大的锗含量，锗的含量随着生长 的分级第一硅锗层进行。 该生长序列允许最大的晶格失配和最高级别的穿透位错存在于渐变硅 - 锗层的底部，随着梯度硅 - 锗层的生长进行，晶格失配和穿透位错的大小减小。 具有均匀或非分级锗含量的上覆硅锗层的原位生长导致松弛的硅 - 锗层，其中最小的位错从下面的梯度硅 - 锗层传播。 硅层的原位生长导致用于MOSFET器件应用的拉伸应变，低缺陷密度层。

    Silicon - germanium virtual substrate and method of fabricating the same
    66.
    发明申请
    Silicon - germanium virtual substrate and method of fabricating the same 有权
    硅 - 锗虚拟衬底及其制造方法

    公开(公告)号：US20050153495A1

    公开(公告)日：2005-07-14

    申请号：US10755501

    申请日：2004-01-12

    申请人： Jin Liu

    发明人： Jin Liu

    IPC分类号： H01L21/336 ,  H01L29/10 ,  H01L29/78

    CPC分类号： H01L29/78 ,  H01L29/1054

    摘要： A method of forming a relaxed silicon-germanium layer for accommodation of an overlying silicon layer formed with tensile strain, has been developed. The method features growth of multiple composite layers on a semiconductor substrate, with each composite layer comprised of an underlying silicon-germanium-carbon layer and of an overlying silicon-germanium layer, followed by the growth of an overlying thicker silicon-germanium layer. A hydrogen anneal procedure performed after growth of the multiple composite layers and of the thicker silicon-germanium layer, results in a top composite layer now comprised with an overlying relaxed silicon-germanium layer, exhibiting a low dislocation density. The presence of silicon-carbon micro crystals in each silicon-germanium-carbon layer reduces the formation of, and the propagation of threading dislocations in overlying silicon-germanium layers, therefore also reducing extension of these defects into an overlying silicon layer, wherein the tensile strained silicon layer will be used to accommodate a subsequent device structure.

    摘要翻译： 已经开发了形成用于容纳形成有拉伸应变的上覆硅层的松弛硅 - 锗层的方法。 该方法的特征是在半导体衬底上生长多个复合层，其中每个复合层由下面的硅 - 锗 - 碳层和上覆的硅 - 锗层组成，随后生长上覆的较厚的硅 - 锗层。 在多个复合层和更厚的硅 - 锗层的生长之后执行的氢退火程序导致顶层复合层现在包含具有低位错密度的上覆松弛硅 - 锗层。 在每个硅 - 锗 - 碳层中硅 - 碳微晶的存在减少了覆盖硅 - 锗层中穿透位错的形成和扩散，因此也减少了这些缺陷扩展到上覆硅层，其中拉伸 应变硅层将用于适应随后的器件结构。

    Bipolar transistor having high emitter efficiency
    67.
    发明授权
    Bipolar transistor having high emitter efficiency 有权
    具有高发射极效率的双极晶体管

    公开(公告)号：US6114745A

    公开(公告)日：2000-09-05

    申请号：US365358

    申请日：1999-07-30

    申请人： Ming Fang ,  Jin Liu ,  Gilles E. Thomas ,  Viviane Marguerite Do-Bento-Vieira

    发明人： Ming Fang ,  Jin Liu ,  Gilles E. Thomas ,  Viviane Marguerite Do-Bento-Vieira

    IPC分类号： H01L29/24 ,  H01L29/737 ,  H01L31/0312 ,  H01L23/58 ,  H01L27/082

    CPC分类号： H01L29/7375 ,  H01L29/1608

    摘要： A vertical conduction NPN bipolar transistor with a tunneling barrier of silicon carbide in the emitter providing a high emitter injection efficiency and high, stable current gain. The emitter structure comprises a heavily doped polysilicon layer atop a silicon carbide layer that contacts a shallow, heavily doped emitter region at the surface of an epitaxial silicon layer, which is disposed on a monocrystallinie silicon substrate. The silicon carbide layer is about 100 to 200 angstroms thick and has a composition selected to provide an energy band gap in the 1.8 to 3.5 eV range. The thickness and composition of the silicon carbide can be varied within the preferred ranges to tune the transistor's electrical characteristics and simplify the fabrication process.

    摘要翻译： 具有发射极中的碳化硅隧道势垒的垂直导通NPN双极晶体管提供高发射极注入效率和高稳定的电流增益。 发射极结构包括位于碳化硅层顶部的重掺杂多晶硅层，其接触位于单晶硅衬底上的外延硅层表面处的浅重掺杂发射极区。 该碳化硅层的厚度为约100至200埃，并且具有选择的组成以提供1.8至3.5eV范围内的能带隙。 碳化硅的厚度和组成可以在优选的范围内变化，以调整晶体管的电特性并简化制造工艺。

    Method and device in a node used for wireless communication
    69.
    发明授权
    Method and device in a node used for wireless communication 有权

    公开(公告)号：US11576209B2

    公开(公告)日：2023-02-07

    申请号：US16824719

    申请日：2020-03-20

    申请人： Jin Liu ,  XiaoBo Zhang

    发明人： Jin Liu ,  XiaoBo Zhang

    IPC分类号： H04W74/08 ,  H04W72/04 ,  H04L5/00 ,  H04W74/00

    摘要： A method and a device in a node used for wireless communication are disclosed in the present disclosure. A first node transmits a first sequence and a first radio signal, the first sequence being associated with the first radio signal, the first sequence being transmitted on a first random-access channel, and a first bit block being used for generating the first radio signal; receives a second radio signal, the second radio signal comprising a first information block; and transmits a second sequence and a third radio signal, the second sequence being associated with the third radio signal, and the second sequence being transmitted on a second random-access channel, the first bit block being used for generating the third radio signal; the first information block comprises a first sequence index, the first sequence index corresponds to the first sequence.

    Smart microscope system for radiation biodosimetry
    70.
    发明授权
    Smart microscope system for radiation biodosimetry 有权

    公开(公告)号：US10929641B2

    公开(公告)日：2021-02-23

    申请号：US16057710

    申请日：2018-08-07

    申请人： Peter Keith Rogan ,  Yanxin Li ,  Jin Liu

    发明人： Peter Keith Rogan ,  Yanxin Li ,  Jin Liu

    IPC分类号： G06K9/00 ,  G06T5/50 ,  G01T1/02 ,  G06T5/00

    摘要： An automated microscope system is described that detects dicentric chromosomes (DCs) in metaphase cells arising from exposure to ionizing radiation. The radiation dose depends on the accuracy of DC detection. Accuracy is increased using image segmentation methods are used to rank high quality cytogenetic images and eliminate suboptimal metaphase cell data in a sample based on novel quality measures. When a sufficient number of high quality images are detected, the microscope system is directed to terminate metaphase image collection for a sample. The microscope system integrates image selection procedures that control an automated digitally controlled microscope with the analysis of acquired metaphase cell images to accurately determine radiation dose. Early termination of image acquisition reduces sample processing time without compromising accuracy. This approach constitutes a reliable and scalable solution that will be essential for analysis of large numbers of potentially exposed individuals.