Abstract:
A power supply apparatus and a method for supplying power are provided. The method includes: providing a first power supply for outputting a first power signal; providing a second power supply for outputting a second power signal; and selectively charging the second power supply by using the first power supply.
Abstract:
A programming method, a reading method and an operating system for a memory are provided. The programming method includes the following steps. A data is provided. A parity generation is performed to obtain an error-correcting code (ECC). The memory is programmed to record the data and the error-correcting code. The data is transformed before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1.
Abstract:
A method and a system for operating a memory are provided. The memory includes a plurality of memory cells which are configured to store data. The method includes the following steps. A counting number recorded in a counter is counted by 1, if the memory is written. The memory is set as a frequently using device, if the counting number recoded in the counter reaches a predetermined value.
Abstract:
An integrated circuit includes an output buffer and a control circuit. The output buffer has a signal input, a signal output, and a set of control inputs. The output buffer has an output buffer delay, and a driving strength adjustable in response to control signals applied to the set of control inputs. The control circuit is connected to the set of control inputs of the output buffer. The control circuit uses first and second timing signals to generate the control signals, and includes a reference delay circuit that generates the first timing signal with a reference delay, and a delay emulation circuit that generates the second timing signal with an emulation delay that correlates with the output buffer delay.
Abstract:
Current drivers and biasing circuitry at least partly compensate for manufacturing variations and environmental variations such as supply voltage, temperature, and fabrication process.
Abstract:
Various aspects of a nonvolatile memory have an improved erase suspend procedure. A bias arrangement is applied to word lines of an erase sector undergoing an erase procedure interrupted by an erase suspend procedure. As a result, another operation performed during erase suspend, such as a read operation or program operation, has more accurate results due to decreased leakage current from any over-erased nonvolatile memory cells of the erase sector.
Abstract:
A power supply apparatus and a method for supplying power are provided. The method includes: providing a first power supply for outputting a first power signal; providing a second first power supply for outputting a second power signal; and selectively charging the second power supply by using the first power supply.
Abstract:
A memory device comprises an array of memory cells, a physically unclonable function PUF circuit in the memory device to generate a PUF code, a data path connecting a first circuit to a second circuit in the memory device coupled to the array of memory cells, and logic circuitry to encode data on the data path from the first circuit using the PUF code to produce encoded data, and to provide the encoded data to the second circuit.
Abstract:
An integrated circuit includes a serial peripheral interface memory device. In an embodiment, the memory device includes a clock signal, a plurality of pins, and a configuration register. In an embodiment, the configuration register includes a wait cycle count. The method includes transmitting a read address to the memory device using a first input/output pin and a second input/output pin concurrently. In an embodiment, the read address includes at least a first address bit and a second address bit, the first address bit being transmitted using the first input/output pin, and the second address bit being transmitted using the second input/output pin. The method includes accessing the memory device for data associated with the address and waiting a predetermined number clock cycles associated with the wait cycle count. The method includes transferring the data from the memory device using the first input/output pin and the second input/output pin concurrently.
Abstract:
A memory device comprises an array of memory cells, a physically unclonable function PUF circuit in the memory device to generate a PUF code, a data path connecting a first circuit to a second circuit in the memory device coupled to the array of memory cells, and logic circuitry to encode data on the data path from the first circuit using the PUF code to produce encoded data, and to provide the encoded data to the second circuit.