Abstract:
In an integrated semiconductor memory having a memory cell array divided into memory banks, supply potentials with high drive capability are applied to the memory banks only if the respective memory bank is activated for access to a memory cell. For this purpose a supply voltage assigned to the respective memory bank is controlled by the same address signal as the memory bank. The supply voltage sources generate a word line potential, a bit line potential or a substrate potential. As a result, a power loss is reduced.
Abstract:
A circuit embodying the invention includes a gating circuit responsive to a first control signal and to a second externally supplied control signal having an active state and an inactive state. The first control signal is produced by a power supply circuit which is responsive to the application of an externally supplied operating voltage for producing an "internal" operating voltage and which produces the first control signal having an active state when the internal operating voltage reaches a predetermined value. The gating circuit has an output for producing a third control signal which is enabling only if the second control signal goes from its inactive state to its active state when the first control signal is already in, and remains in, its active state. The gating circuit prevents a chip from operating in an unintended mode at power-up.
Abstract:
A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.
Abstract:
One aspect of the invention relates to a voltage regulation process as well as to a voltage regulation system. A first voltage, present at an input of the voltage regulating system, is changed into a second voltage, which can be tapped at an output of the voltage regulation system, with a first device for generating an essentially constant voltage from the first voltage, or a voltage derived from it. A further device is provided for generating a further voltage from the first voltage or a voltage derived from it, in particular a voltage which can be higher than the voltage generated by the first device.
Abstract:
A method of sending data on request from a memory to a device, wherein the memory receives a request from the device for sending predetermined data to the device, wherein the memory sends data and information about the data to the device.
Abstract:
An integrated circuit includes an array of memory cells and a digital flag generator circuit configured to generate a data inversion flag based on whether a number of logical zero bits contained in a data word to be transmitted from the memory cells is greater than a threshold number. The digital flag generator circuit includes a first digital stage including a first plurality of binary logic circuits. Each of the binary logic circuits is configured to receive a subset of the data word.
Abstract:
A memory device can be operated in a first operating state and a second operating state, where read access to memory cells can be performed in the first operating state. The memory device includes an activatable clock generator circuit to generate a clock signal. The clock generator circuit can be operated in an activated state, in which it generates the clock signal, and in a deactivated state, in which generation of the clock signal is suppressed. The activatable clock generator circuit is operated in the activated state at a time period after changeover of the memory device from the first operating state to the second operating state, and is changed over from the activated state to the deactivated state no later than after the period has elapsed.
Abstract:
A memory device has a first memory area and a second memory area. A method for operating the memory device includes a write access to the first memory area and a read access to the second memory area.
Abstract:
A memory circuit comprises a D/A converter connected with an input/output circuit and with a writing circuit, wherein the D/A converter converts a digital data with at least two digital bits received from the input/output circuit to one analog value and forwards the analog value to the writing circuit, wherein the digital data is at least a part of a floating point number, wherein the writing circuit writes the analog value in at least one selected memory cell, and an A/D converter connected with a reading circuit and with the input/output circuit, wherein the reading circuit reads an analog value from a selected memory cell and forwards the analog value to the A/D converter, wherein the A/D converter converts the analog value to digital data, and wherein the A/D converter forwards the digital data to the input/output circuit. Furthermore, a method is provided for reading data from at least one memory cell of a memory, wherein an analog value is read from the memory cell and the analog value is corrected according to a correction factor representing a storage time the analog value was stored and wherein the corrected analog value is converted to digital data.
Abstract:
The invention creates an electronic circuit arrangement for receiving a received electrical signal (101) with a first receiving device (100), a second receiving device (200) and a comparator unit (301) for comparing a second signal difference (207), output by the second receiving device (200), with a target value signal (303) and for outputting a control signal (305) in dependence on the comparison, wherein the control signal (305) controls both the first receiving device (100) and the second receiving device (200) into a respective operating point in such a manner that the amplified second signal difference (207) is held at a level of the target value signal (303) and a first signal difference (107) output from the first receiving device (100) supplies with high accuracy a measure of the received signal (101) with respect to a predetermined reference signal (103).