公开(公告)号：US06383856B2

公开(公告)日：2002-05-07

申请号：US09921902

申请日：2001-08-06

申请人： Seiji Inumiya ,  Yoshio Ozawa

发明人： Seiji Inumiya ,  Yoshio Ozawa

IPC分类号： H01L213115

CPC分类号： H01L21/28202 ,  H01L21/28185 ,  H01L21/2822 ,  H01L21/31155 ,  H01L21/76224 ,  H01L21/823481 ,  H01L29/42368 ,  H01L29/518

摘要： A semiconductor device is provided in which a lowering in the breakdown voltage of a gate insulating film (nitrided silicon oxide film) in a boundary region between the upper-end corner portion of the side wall of an element isolating groove and a silicon substrate in the end portion of an element forming region which is formed in contact therewith can be suppressed without causing an increase in the number of steps (time for effecting the steps). An element isolation insulating film is filled into the internal portion of the element isolating groove to cover the end portion of the silicon substrate in the element forming region which is formed in contact with the upper-end portion of the side wall of the element isolating groove, nitrogen is selectively doped into the surface of the silicon substrate in a region of the element forming region other than the end portion thereof with the element isolation insulating film used as a mask, then a portion of the element isolation insulating film lying outside the element isolating groove is removed to expose the upper-end portion of the side wall, and a nitrided silicon oxide film used as the gate insulating film is formed by the heat treatment in an atmosphere containing an oxidizing agent.

摘要翻译： 提供了一种半导体器件，其中在元件隔离槽的侧壁的上端拐角部分和硅衬底的边界区域中的栅绝缘膜（氮化硅氧化物膜）的击穿电压降低 可以抑制与其接触形成的元件形成区域的端部，而不会增加步骤数（进行步骤的时间）。 元件隔离绝缘膜被填充到元件隔离槽的内部，以覆盖与元件隔离槽的侧壁的上端部接触形成的元件形成区域中的硅基板的端部 在元件隔离绝缘膜用作掩模的情况下，在除了其端部之外的元件形成区域的区域中的氮衬底的表面中选择性地掺杂氮，然后元件隔离绝缘膜的位于元件外部的部分 去除隔离槽以暴露侧壁的上端部分，并且在包含氧化剂的气氛中通过热处理形成用作栅极绝缘膜的氮化氧化硅膜。

公开(公告)号：US6017809A

公开(公告)日：2000-01-25

申请号：US988221

申请日：1997-12-10

申请人： Seiji Inumiya ,  Yoshio Ozawa

发明人： Seiji Inumiya ,  Yoshio Ozawa

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L21/3205

CPC分类号： H01L29/66575 ,  H01L21/28061 ,  H01L21/28105 ,  H01L29/4933

摘要： A method of manufacturing a semiconductor device comprises the steps of forming a gate insulating film and a first silicon film on a semiconductor substrate, forming on the first silicon film a conductive film selected from the group consisting of a metal film and a metal silicide film, patterning the conductive film and the first silicon film, thereby forming a gate electrode, forming a second silicon film on a surface of the gate electrode, and carrying out a heat treatment at temperatures of 950.degree. C. or above for increasing the radius of curvature of a lower end portion of the gate electrode or increasing the thickness of the gate insulating film under the lower end portion of the gate electrode, and repairing defects in the gate insulating film.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底上形成栅绝缘膜和第一硅膜，在第一硅膜上形成选自金属膜和金属硅化物膜的导电膜， 图案化导电膜和第一硅膜，由此形成栅电极，在栅电极的表面上形成第二硅膜，并在950℃或更高的温度下进行热处理以增加曲率半径 或增加栅电极下端部分的栅极绝缘膜的厚度，修复栅极绝缘膜的缺陷。

公开(公告)号：US08084834B2

公开(公告)日：2011-12-27

申请号：US12512221

申请日：2009-07-30

申请人： Akio Kaneko ,  Seiji Inumiya

发明人： Akio Kaneko ,  Seiji Inumiya

IPC分类号： H01L21/8234

CPC分类号： H01L21/31604 ,  H01L21/28044 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/318 ,  H01L29/4916 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device of the present invention includes: a semiconductor layer; a gate insulation film provided on the semiconductor layer and including at least one of Hf and Zr; and a gate electrode provided on the gate insulation film and including a carbonitride which includes at least one of Hf and Zr.

摘要翻译： 本发明的半导体器件包括：半导体层; 设置在所述半导体层上并且包括Hf和Zr中的至少一种的栅极绝缘膜; 以及设置在所述栅极绝缘膜上并包括包含Hf和Zr中的至少一种的碳氮化物的栅电极。

公开(公告)号：US08071447B2

公开(公告)日：2011-12-06

申请号：US12704315

申请日：2010-02-11

申请人： Seiji Inumiya ,  Tomonori Aoyama

发明人： Seiji Inumiya ,  Tomonori Aoyama

IPC分类号： H01L21/336

CPC分类号： H01L21/28167 ,  H01L21/02057 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/7624 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device manufacturing method includes removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the substrate on the surface of the substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into an insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the substrate, and oxygen.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在半导体基板上通过蚀刻，通过使用液体氧化剂对所述基板的表面进行氧化而不使所述表面暴露在大气中而除去半导体基板上的绝缘膜，由此形成含有成分的氧化物的第一绝缘膜 衬底表面上的衬底元件; 在所述第一绝缘膜上形成含有氧化铝的第二绝缘膜; 在所述第二绝缘膜上形成含有稀土类氧化物的第三绝缘膜; 在第三绝缘膜上形成高k绝缘膜; 将氮引入高k绝缘膜，从而使其成为第四绝缘膜; 进行热处理，将第一至第三绝缘膜变成由含有铝，稀土元素，基板的构成元素和氧的混合物构成的绝缘膜。

公开(公告)号：US07858536B2

公开(公告)日：2010-12-28

申请号：US11902300

申请日：2007-09-20

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/31

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

摘要翻译： 一种半导体器件，包括半导体衬底，形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质，所述氧化硅膜含有所述金属元素，所述金属元素包括在其下表面附近的第一区域， 上表面和第一和第二区域之间的第三区域，包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布，存在于第三区域中的密度分布的峰值， 以及形成在栅极电介质上的电极。

公开(公告)号：US07816215B2

公开(公告)日：2010-10-19

申请号：US10941814

申请日：2004-09-16

申请人： Daisuke Matsushita ,  Koichi Muraoka ,  Seiji Inumiya ,  Koichi Kato ,  Kazuhiro Eguchi ,  Mariko Takayanagi ,  Yasushi Nakasaki

发明人： Daisuke Matsushita ,  Koichi Muraoka ,  Seiji Inumiya ,  Koichi Kato ,  Kazuhiro Eguchi ,  Mariko Takayanagi ,  Yasushi Nakasaki

IPC分类号： H01L21/336

CPC分类号： H01L21/28202 ,  H01L21/022 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518

摘要： A semiconductor device manufacturing method comprises: forming a gate insulative film on a semiconductor substrate by: forming a first nitride film on the substrate; forming a first oxide film and a second oxide film, the first oxide film being between the substrate and the first nitride film, the second oxide film being on the first nitride film; and nitriding the second oxide film to form, on the first nitride film, one of either: a second nitride film or an SiON film; and forming a gate electrode on the gate insulative film; wherein the equivalent oxide thickness of the gate insulative film is equal to or less than 1 nm.

摘要翻译： 一种半导体器件制造方法，包括：在半导体衬底上形成栅极绝缘膜，方法是在衬底上形成第一氮化物膜; 形成第一氧化物膜和第二氧化物膜，所述第一氧化膜位于所述衬底和所述第一氮化物膜之间，所述第二氧化物膜位于所述第一氮化物膜上; 并且对所述第二氧化物膜进行氮化以在所述第一氮化物膜上形成以下之一：第二氮化物膜或SiON膜; 并在所述栅极绝缘膜上形成栅电极; 其中所述栅绝缘膜的等效氧化物厚度等于或小于1nm。

公开(公告)号：US20100173487A1

公开(公告)日：2010-07-08

申请号：US12654559

申请日：2009-12-23

申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

IPC分类号： H01L21/28

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

公开(公告)号：US20100159686A1

公开(公告)日：2010-06-24

申请号：US12659250

申请日：2010-03-02

申请人： Akio Kaneko ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Motoyuki Sato

发明人： Akio Kaneko ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Kazuhiro Eguchi ,  Motoyuki Sato

IPC分类号： H01L21/28

CPC分类号： H01L21/28194 ,  H01L21/28079 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to the present invention comprises a semiconductor substrate, a gate insulating film which is composed of a material whose main component is a tetravalent metal oxide, a mixture of a tetravalent metal oxide and SiO2, or a mixture of a tetravalent metal oxide and SiON and which containing B when it is in an nMOS structure on the semiconductor substrate or containing at least one of P and As when it is in a pMOS structure on the semiconductor substrate, and a gate electrode made of a metal having a work function of 4 eV to 5.5 eV.

公开(公告)号：US07652341B2

公开(公告)日：2010-01-26

申请号：US11889278

申请日：2007-08-10

申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

IPC分类号： H01L29/78

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

摘要翻译： 一种半导体装置，其中形成在半导体衬底上的器件包括栅极绝缘膜，该栅极绝缘膜包括形成在基底上的高介电常数膜和形成在高介电常数膜上的抗反应膜，以及形成在抗反应上的栅电极 高介电常数膜包括含有Hf和Zr中的至少一种以及Si和O的膜，或包含Hf和Zr中的至少一种以及Si，O和N的膜，所述抗反应膜包括 SiO 2膜，含有SiO 2作为主要成分的膜和Hf和Zr中的至少一种，以SiO 2为主要成分的膜和N，以SiO 2为主要成分的膜，Hf和N，含有SiO 2作为 主成分Zr和N，或以SiO2为主要成分的膜，Hf，Zr和N.

公开(公告)号：US07265427B2

公开(公告)日：2007-09-04

申请号：US10927115

申请日：2004-08-27

申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

摘要翻译： 一种半导体装置，其中形成在半导体衬底上的器件包括栅极绝缘膜，该栅极绝缘膜包括形成在基底上的高介电常数膜和形成在高介电常数膜上的抗反应膜，以及形成在抗反应上的栅电极 高介电常数膜包括含有Hf和Zr中的至少一种以及Si和O的膜，或包含Hf和Zr中的至少一种以及Si，O和N的膜，所述抗反应膜包括 SiO 2膜，含有SiO 2作为主要成分的膜和Hf和Zr中的至少一种的膜，含有SiO 2的膜作为 主要成分为N，以SiO 2为主要成分的膜，Hf和N，以SiO 2为主要成分的膜，Zr和N，或膜 含有SiO 2作为主要成分的Hf，Zr和N.