利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

81 条记录 (耗时 0.021 秒)

    Semiconductor device and method of fabricating the same
    2.
    发明申请
    Semiconductor device and method of fabricating the same 审中-公开
    半导体装置及其制造方法

    公开(公告)号：US20100003813A1

    公开(公告)日：2010-01-07

    申请号：US12585334

    申请日：2009-09-11

    申请人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

    发明人： Katsuyuki Sekine ,  Akio Kaneko ,  Motoyuki Sato ,  Seiji Inumiya ,  Kazuhiro Eguchi

    IPC分类号： H01L21/28

    CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02329 ,  H01L21/3145

    摘要： According to the present invention, there is provided a semiconductor device comprising: a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a gate electrode formed on said gate insulating film; and a source region and drain region formed, in a surface portion of said semiconductor substrate, on two sides of a channel region positioned below said gate electrode, wherein a carbon concentration in an interface where said gate insulating film is in contact with said gate electrode is not more than 5×1022 atoms/cm3.

    摘要翻译： 根据本发明，提供了一种半导体器件，包括：选择性地形成在半导体衬底的预定区域上的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及在所述半导体衬底的表面部分中形成在位于所述栅极电极下方的沟道区域的两侧上的源极区和漏极区，其中所述栅极绝缘膜与所述栅电极接触的界面中的碳浓度 不大于5×1022原子/ cm3。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
    半导体器件及其制造方法

    公开(公告)号：US20090194821A1

    公开(公告)日：2009-08-06

    申请号：US12359974

    申请日：2009-01-26

    申请人： Akio KANEKO ,  Seiji Inumiya ,  Tomonori Aoyama ,  Takuya Kobayashi

    发明人： Akio KANEKO ,  Seiji Inumiya ,  Tomonori Aoyama ,  Takuya Kobayashi

    IPC分类号： H01L29/68 ,  H01L21/8238

    CPC分类号： H01L21/823807 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/823431 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/0886 ,  H01L27/0922 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66651 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7851 ,  H01L29/7853

    摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film.

    摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在半导体衬底上形成SiGe晶体层，所述SiGe晶体层具有第一平面和相对于第一平面倾斜的第二平面; 在SiGe晶体层上形成非晶Si膜; 通过使用SiGe晶体层的第一和第二平面作为种子进行热处理，使位于非晶Si膜的第一和第二平面附近的部分结晶，从而形成Si晶体层; 通过热处理选择性去除或稀薄未结晶的非晶Si膜的一部分; 对Si晶体层的表面进行氧化处理，从而在Si晶体层的表面上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。

    Semiconductor apparatus and method of manufacturing the semiconductor apparatus
    6.
    发明申请
    Semiconductor apparatus and method of manufacturing the semiconductor apparatus 有权
    半导体装置及其制造方法

    公开(公告)号：US20080054378A1

    公开(公告)日：2008-03-06

    申请号：US11889278

    申请日：2007-08-10

    申请人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

    发明人： Akio Kaneko ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Motoyuki Sato

    IPC分类号： H01L29/76

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L27/115 ,  H01L27/1203 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66825 ,  H01L29/78

    摘要： A semiconductor apparatus wherein a device formed on a semiconductor substrate comprises a gate insulating film including a high dielectric constant film formed on the substrate and an anti-reaction film formed on the high dielectric constant film, and a gate electrode formed on the anti-reaction film, the high dielectric constant film comprises a film containing at least one of Hf and Zr, and Si and O, or a film containing at least one of Hf and Zr, and Si, O and N, the anti-reaction film comprises an SiO2 film, a film containing SiO2 as a main component and at least one of Hf and Zr, a film containing SiO2 as a main component and N, a film containing SiO2 as a main component, Hf and N, a film containing SiO2 as a main component, Zr and N, or a film containing SiO2 as a main component, Hf, Zr and N.

    摘要翻译： 一种半导体装置，其中形成在半导体衬底上的器件包括栅极绝缘膜，该栅极绝缘膜包括形成在基底上的高介电常数膜和形成在高介电常数膜上的抗反应膜，以及形成在抗反应上的栅电极 高介电常数膜包括含有Hf和Zr中的至少一种以及Si和O的膜，或包含Hf和Zr中的至少一种以及Si，O和N的膜，所述抗反应膜包括 SiO 2膜，含有SiO 2作为主要成分的膜和Hf和Zr中的至少一种的膜，含有SiO 2的膜作为 主要成分为N，以SiO 2为主要成分的膜，Hf和N，以SiO 2为主要成分的膜，Zr和N，或膜 含有SiO 2作为主要成分的Hf，Zr和N.

    Semiconductor device and method of fabricating the same
    9.
    发明申请
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20050236678A1

    公开(公告)日：2005-10-27

    申请号：US10962673

    申请日：2004-10-13

    申请人： Motoyuki Sato ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Akio Kaneko

    发明人： Motoyuki Sato ,  Kazuhiro Eguchi ,  Seiji Inumiya ,  Katsuyuki Sekine ,  Akio Kaneko

    IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/76

    CPC分类号： H01L29/518 ,  H01L21/2807 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/78

    摘要： According to the present invention, there is provided a semiconductor device comprising: an interface insulating film selectively formed on a predetermined region of a semiconductor substrate, and having a film thickness of substantially one atomic layer; a gate insulating film formed on said interface insulating film, and having a dielectric constant higher than that of said interface insulating film; a gate electrode formed on said gate insulating film; and source and drain regions formed in a surface region of said semiconductor substrate on two sides of a channel region positioned below said gate electrode.

    摘要翻译： 根据本发明，提供了一种半导体器件，包括：界面绝缘膜，其选择性地形成在半导体衬底的预定区域上，并且具有基本上一个原子层的膜厚度; 形成在所述界面绝缘膜上并具有高于所述界面绝缘膜的介电常数的介电常数的栅极绝缘膜; 形成在所述栅极绝缘膜上的栅电极; 以及源极和漏极区，形成在位于所述栅电极下方的沟道区的两侧的所述半导体衬底的表面区域中。

    Semiconductor device and method of fabricating the same
    10.
    发明授权
    Semiconductor device and method of fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US08039333B2

    公开(公告)日：2011-10-18

    申请号：US12359974

    申请日：2009-01-26

    申请人： Akio Kaneko ,  Seiji Inumiya ,  Tomonori Aoyama ,  Takuya Kobayashi

    发明人： Akio Kaneko ,  Seiji Inumiya ,  Tomonori Aoyama ,  Takuya Kobayashi

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L21/823807 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/823431 ,  H01L21/82385 ,  H01L21/823857 ,  H01L27/0886 ,  H01L27/0922 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66651 ,  H01L29/66795 ,  H01L29/7834 ,  H01L29/7851 ,  H01L29/7853

    摘要： A method of fabricating a semiconductor device according to one embodiment includes: forming a SiGe crystal layer on a semiconductor substrate, the SiGe crystal layer having a first plane and a second plane inclined with respect to the first plane; forming an amorphous Si film on the SiGe crystal layer; crystallizing a portion located adjacent to the first and second planes of the amorphous Si film by applying heat treatment using the first and second planes of the SiGe crystal layer as a seed, thereby forming a Si crystal layer; selectively removing or thinning a portion of the amorphous Si film that is not crystallized by the heat treatment; applying oxidation treatment to a surface of the Si crystal layer, thereby forming a gate insulating film on the surface of the Si crystal layer; and forming a gate electrode on the gate insulating film.

    摘要翻译： 根据一个实施例的制造半导体器件的方法包括：在半导体衬底上形成SiGe晶体层，所述SiGe晶体层具有第一平面和相对于第一平面倾斜的第二平面; 在SiGe晶体层上形成非晶Si膜; 通过使用SiGe晶体层的第一和第二平面作为种子进行热处理，使位于非晶Si膜的第一和第二平面附近的部分结晶，从而形成Si晶体层; 通过热处理选择性去除或稀薄未结晶的非晶Si膜的一部分; 对Si晶体层的表面进行氧化处理，从而在Si晶体层的表面上形成栅极绝缘膜; 以及在所述栅极绝缘膜上形成栅电极。