公开(公告)号：US20100187523A1

公开(公告)日：2010-07-29

申请号：US12683695

申请日：2010-01-07

申请人： Junichiro SAKATA ,  Takashi SHIMAZU ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

发明人： Junichiro SAKATA ,  Takashi SHIMAZU ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/24 ,  H01L29/22 ,  H01L21/34

CPC分类号： H01L29/16 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/78618 ,  H01L29/7869

摘要： An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiOx is used in a channel formation region, and in order to reduce contact resistance with source and drain electrode layers formed using a metal material with low electric resistance, source and drain regions are provided between the source and drain electrode layers and the oxide semiconductor layer including SiOx. The source and drain regions are formed using an oxide semiconductor layer which does not include SiOx or an oxynitride film.

摘要翻译： 本发明的目的是提供一种包括具有氧化物半导体层并具有高电特性的薄膜晶体管的半导体器件。 在沟道形成区域中使用包含SiO x的氧化物半导体层，为了降低与使用具有低电阻的金属材料形成的源极和漏极电极层的接触电阻，源极和漏极电极层之间提供源极和漏极区域 和包含SiOx的氧化物半导体层。 源极和漏极区域使用不包括SiO x或氮氧化物膜的氧化物半导体层形成。

公开(公告)号：US20100181565A1

公开(公告)日：2010-07-22

申请号：US12683681

申请日：2010-01-07

申请人： Junichiro SAKATA ,  Takashi SHIMAZU ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

发明人： Junichiro SAKATA ,  Takashi SHIMAZU ,  Hiroki OHARA ,  Toshinari SASAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  H01L21/36

CPC分类号： H01L29/78696 ,  C23C14/086 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02592 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693 ,  H04M1/0266

摘要： A semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics and reliability. Film deposition is performed using an oxide semiconductor target containing an insulator (an insulating oxide, an insulating nitride, silicon oxynitride, aluminum oxynitride, or the like), typically SiO2, so that the semiconductor device in which the Si-element concentration in the thickness direction of the oxide semiconductor layer has a gradient which increases in accordance with an increase in a distance from a gate electrode is realized.

摘要翻译： 一种包括具有氧化物半导体层并具有高电特性和可靠性的薄膜晶体管的半导体器件。 通常使用包含绝缘体（绝缘氧化物，绝缘氮化物，氮氧化硅，氮氧化铝等）（通常为SiO 2）的氧化物半导体靶进行膜沉积，使得其中Si元素浓度在厚度 氧化物半导体层的方向具有根据与栅电极的距离的增加而增加的梯度。

公开(公告)号：US20070194306A1

公开(公告)日：2007-08-23

申请号：US11674428

申请日：2007-02-13

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Takahiro KAWAKAMI ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Takahiro KAWAKAMI ,  Yoshiaki YAMAMOTO ,  Miki KATAYAMA ,  Kohei YOKOYAMA

IPC分类号： H01L29/08

CPC分类号： C09K11/08 ,  H01L51/5088 ,  H05B33/22

摘要： It is an object to provide a light emitting element capable of low-voltage driving; with high luminous efficiency; with high emission luminance; and with long emission lifetime. It is another object to provide a light emitting device and an electronic appliance in which power consumption is reduced; and which can be manufactured at low cost. A light emitting element is provided, including a light emitting layer and a layer including a composite material between a first electrode and a second electrode, where the light emitting layer includes a base material and an impurity element, the layer including the composite material includes an organic compound and an inorganic compound, the layer including the composite material is provided to be in contact with the second electrode, and light emission is obtained by application of a voltage so that an electric potential of the second electrode is higher than that of the first electrode.

摘要翻译： 本发明的目的是提供一种能够进行低电压驱动的发光元件。 发光效率高; 具有高发光亮度; 并具有长的发光寿命。 另一个目的是提供一种减少功耗的发光装置和电子设备; 并且可以以低成本制造。 提供了一种发光元件，其包括发光层和在第一电极和第二电极之间包括复合材料的层，其中发光层包括基底材料和杂质元素，所述包括复合材料的层包括 有机化合物和无机化合物，包括复合材料的层被设置为与第二电极接触，并且通过施加电压获得发光，使得第二电极的电位高于第一电极的电位 电极。

公开(公告)号：US20120181522A1

公开(公告)日：2012-07-19

申请号：US13417551

申请日：2012-03-12

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Yasuo NAKAMURA ,  Keiko SAITO

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hisao IKEDA ,  Yasuo NAKAMURA ,  Keiko SAITO

IPC分类号： H01L27/32

CPC分类号： H01L27/3272 ,  H01L27/1218 ,  H01L27/1222 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3248 ,  H01L33/08 ,  H01L33/36 ,  H01L33/50 ,  H01L33/56 ,  H01L33/58 ,  H01L51/5052 ,  H01L51/5088 ,  H01L51/5092 ,  H01L51/5203 ,  H01L51/5212 ,  H01L51/5228 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5259 ,  H01L51/5262 ,  H01L51/5284 ,  H01L51/56 ,  H01L2251/5315

摘要： The present invention provides a light-emitting device comprising a first light-emitting element that emits red light, a second light-emitting element that emits green light, a third light-emitting element that emits blue light, and a color filter, where the color filter comprises a first coloring layer that selectively transmits red light, a second coloring layer that selectively transmits green light, and a third coloring layer that selectively transmits blue light, the first to third light-emitting elements respectively correspond to the first to third coloring layers, wherein each of the first to third light-emitting elements has a first electrode, an electroluminescent layer on the first electrode, and a second electrode on the electroluminescent layer, and wherein the electroluminescent layer includes a layer in contact with the second electrode, and a metal oxide or a benzoxazole derivative is included in the layer in contact with the second electrode.

摘要翻译： 本发明提供一种包括发射红光的第一发光元件，发出绿光的第二发光元件，发出蓝光的第三发光元件和滤色器的发光器件，其中 滤色器包括选择性地透射红光的第一着色层，选择性地透射绿光的第二着色层和选择性地透射蓝光的第三着色层，第一至第三发光元件分别对应于第一至第三着色层 层，其中第一至第三发光元件中的每一个具有第一电极，第一电极上的电致发光层和电致发光层上的第二电极，并且其中电致发光层包括与第二电极接触的层， 并且在与第二电极接触的层中包含金属氧化物或苯并恶唑衍生物。

公开(公告)号：US20110111558A1

公开(公告)日：2011-05-12

申请号：US12938538

申请日：2010-11-03

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Toru TAKAYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Toru TAKAYAMA

IPC分类号： H01L21/336 ,  C23C14/34 ,  C23C14/08

CPC分类号： H01L21/6719 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/67207 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.

摘要翻译： 本发明的目的是提供一种用于形成含有少量诸如氢原子或碳原子的杂质的薄膜的沉积装置。 此外，目的在于提供一种形成含有少量杂质的薄膜的方法。 此外，目的在于提供一种制造高可靠性的半导体元件的方法，所述半导体元件包括少量杂质的氧化物半导体膜。 可以提供沉积装置，用于形成含有少量杂质的薄膜，例如含有氢原子的化合物如H 2 O，含有碳原子的化合物，氢原子或碳原子。 此外，可以提供形成含有少量杂质的薄膜的方法。 此外，可以提供形成包含少量杂质的氧化物半导体膜的高可靠性半导体元件的方法。

公开(公告)号：US20100117074A1

公开(公告)日：2010-05-13

申请号：US12612096

申请日：2009-11-04

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78669 ,  H01L21/02565 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78678 ,  H01L29/7869 ,  H01L29/78696

摘要： It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.

摘要翻译： 本发明的目的是提供一种包括电特性稳定的薄膜晶体管的高度可靠的半导体器件。 此外，另一个目的是以低成本，高生产率制造高度可靠的半导体器件。 在包括薄膜晶体管的半导体器件中，薄膜晶体管的半导体层形成有添加了金属元素的氧化物半导体层。 作为金属元素，使用铁，镍，钴，铜，金，锰，钼，钨，铌和钽中的至少一种金属元素。 此外，氧化物半导体层含有铟，镓和锌。

公开(公告)号：US20090170227A1

公开(公告)日：2009-07-02

申请号：US12362461

申请日：2009-01-29

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hideaki KUWABARA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hideaki KUWABARA

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： G03F1/66 ,  C23C14/042 ,  G03F7/70741 ,  H01L51/0011

摘要： The present invention provides a large mask with a high mask accuracy for conducting selective deposition on a substrate with a large surface area. In accordance with the present invention, the mask body is fixed in a fixing position disposed on a line passing through a thermal expansion center in the width of the mask frame. Further, in accordance with the present invention, the substrate and mask body are fixed and deposition is carried out by moving the deposition source in the X direction or Y direction. A method comprising moving the deposition source in the X direction or Y direction is suitable for deposition on large substrates.

摘要翻译： 本发明提供了具有高掩模精度的大掩模，用于在具有大表面积的基板上进行选择性沉积。 根据本发明，掩模体固定在布置在通过荫罩框架的宽度的热膨胀中心的线上的固定位置。 此外，根据本发明，通过在X方向或Y方向移动沉积源来固定基板和掩模体并进行沉积。 包括在X方向或Y方向上移动沉积源的方法适合于沉积在大的衬底上。

公开(公告)号：US20120298990A1

公开(公告)日：2012-11-29

申请号：US13567451

申请日：2012-08-06

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Ikuko KAWAMATA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroyuki MIYAKE ,  Hideaki KUWABARA ,  Ikuko KAWAMATA

IPC分类号： H01L29/12

CPC分类号： H01L27/1251 ,  G02F1/13454 ,  G02F2201/40 ,  G02F2202/10 ,  H01L27/1225 ,  H01L27/1233

摘要： An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor.

摘要翻译： 目的是提高半导体器件的开口率。 半导体器件包括驱动器电路部分和在一个衬底上的显示部分（也称为像素部分）。 驱动器电路部分包括用于驱动电路的沟道蚀刻薄膜晶体管，其中使用金属形成源电极和漏电极，并且沟道层由氧化物半导体形成，并且使用金属形成驱动电路布线。 显示部分包括用于像素的沟道保护薄膜晶体管，其中使用氧化物导体形成源极电极层和漏极电极层，并且半导体层由氧化物半导体形成;以及显示部分布线，其使用 氧化物导体。

公开(公告)号：US20120146019A1

公开(公告)日：2012-06-14

申请号：US13399375

申请日：2012-02-17

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroki OHARA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Hiroki OHARA

IPC分类号： H01L29/786

CPC分类号： H01L21/465 ,  H01L21/02565 ,  H01L21/28176 ,  H01L21/324 ,  H01L21/477 ,  H01L29/04 ,  H01L29/045 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

公开(公告)号：US20110215319A1

公开(公告)日：2011-09-08

申请号：US13104546

申请日：2011-05-10

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Jun KOYAMA

IPC分类号： H01L29/786 ,  H01L33/08

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

摘要翻译： 提供一种包括具有氧化物半导体层和优异的电特性的薄膜晶体管的半导体器件。 此外，提供了一种用于制造半导体器件的方法，其中在一个衬底上形成了多种不同结构的薄膜晶体管，以形成多种电路，并且其中步数没有大的增加。 在绝缘表面上形成金属薄膜之后，在其上形成氧化物半导体层。 然后，进行氧化处理如热处理以部分或全部氧化金属薄膜。 此外，在诸如逻辑电路和矩阵电路之类的重点放在诸如操作速度的电路之间，薄膜晶体管的结构是不同的。