摘要:
A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.
摘要:
A complementary metal oxide semiconductor integrated circuit may be formed with NMOS and PMOS transistors that have high dielectric constant gate dielectric material over a semiconductor substrate. A metal barrier layer may be formed over the gate dielectric. A workfunction setting metal layer is formed over the metal barrier layer and a cap metal layer is formed over the workfunction setting metal layer.
摘要:
Ambipolar conduction can be reduced in carbon nanotube transistors by forming a gate electrode of a metal. Metal sidewall spacers having different workfunctions than the gate electrode may be formed to bracket the metal gate electrode.
摘要:
Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a subtractive process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.
摘要:
Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.
摘要:
In a metal gate replacement process, a gate electrode stack may be formed of a germanium containing layer. In subsequent processing of the source/drains, high temperature steps may be utilized, forming a germinide on said stacks. That germinide may be removed, prior to removing the rest of the stack, using H2O2.
摘要翻译:在金属栅极替换工艺中,栅电极堆叠可以由含锗层形成。 在源/下水道的后续处理中,可以利用高温步骤,在所述堆上形成发芽。 在使用H 2 O 2 O 2除去堆叠的其余部分之前,可以除去该发芽物。
摘要:
In a metal gate replacement process, a stack of at least two polysilicon layers or other materials may be formed. Sidewall spacers may be formed on the stack. The stack may then be planarized. Next, the upper layer of the stack may be selectively removed. Then, the exposed portions of the sidewall spacers may be selectively removed. Finally, the lower portion of the stack may be removed to form a T-shaped trench which may be filled with the metal replacement.
摘要:
A wafer may be rotated while etching to displace bubbles that may form, for example, from a reaction between silicon and water. As a result, a hydrophobic layer, which would otherwise be created by the bubbles, cannot form, resulting in a more uniform etch rate in some embodiments.
摘要:
A field-effect transistor for a narrow-body, multiple-gate transistor such as a FinFET, tri-gate or Ω-FET is described. The corners of the channel region disposed beneath the gate are rounded n, for instance, oxidation steps, to reduce the comer effect associated with conduction initiating in the corners of the channel region.
摘要:
The present invention relates to a Tunnel Field Effect Transistor (TFET), which utilizes angle implantation and amorphization to form asymmetric source and drain regions. The TFET further comprises a silicon germanium alloy epitaxial source region with a conductivity opposite that of the drain.