公开(公告)号：US20190189630A1

公开(公告)日：2019-06-20

申请号：US16186042

申请日：2018-11-09

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  John Mark Meldrim ,  Everett A. McTeer

IPC: H01L27/11556

CPC classification number: H01L27/11556 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11582

Abstract: Some embodiments include a method in which an assembly is formed to have voids within a stack, and to have slits adjacent the voids. Peripheral boundaries of the voids have proximal regions near the slits and distal regions adjacent the proximal regions. A material is deposited within the voids under conditions which cause the material to form to a greater thickness along the distal regions than along the proximal regions. Some embodiments include an assembly having a stack of alternating first and second levels. The second levels include conductive material. Panel structures extend through the stack. The conductive material within the second levels has outer edges with proximal regions near the panel structures and distal regions adjacent the proximal regions. Interface material is along the outer edges of the conductive material and has a different composition along the proximal regions than along the distal regions.

公开(公告)号：US10283524B1

公开(公告)日：2019-05-07

申请号：US15848612

申请日：2017-12-20

Applicant: Micron Technology, Inc.

Inventor： Jordan D. Greenlee ,  Chet E. Carter ,  Collin Howder ,  John Mark Meldrim ,  Everett A. McTeer

IPC: H01L21/28 ,  H01L29/10 ,  H01L29/49 ,  H01L21/285 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/3213 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582

Abstract: Some embodiments include a method of forming an integrated structure. An assembly is formed to include a stack of alternating first and second levels. The first levels have insulative material, and the second levels have voids which extend horizontally. The assembly includes channel material structures extending through the stack. A first metal-containing material is deposited within the voids to partially fill the voids. The deposited first metal-containing material is etched to remove some of the first metal-containing material from within the partially-filled voids. Second metal-containing material is then deposited to fill the voids.

公开(公告)号：US10193064B2

公开(公告)日：2019-01-29

申请号：US15642673

申请日：2017-07-06

Applicant: Micron Technology, Inc.

Inventor： Tsz W. Chan ,  D. V. Nirmal Ramaswamy ,  Qian Tao ,  Yongjun Jeff Hu ,  Everett A. McTeer

IPC: H01L45/00 ,  H01L27/24

Abstract: A memory cell comprising a threshold switching material over a first electrode on a substrate. The memory cell includes a second electrode over the threshold switching material and at least one dielectric material between the threshold switching material and at least one of the first electrode and the second electrode. A memory material overlies the second electrode. The dielectric material may directly contact the threshold switching material and each of the first electrode and the second electrode. Memory cells including only one dielectric material between the threshold switching material and an electrode are disclosed. A memory device including the memory cells and methods of forming the memory cells are also described.

公开(公告)号：US20160155619A1

公开(公告)日：2016-06-02

申请号：US14986757

申请日：2016-01-04

Applicant: Micron Technology, Inc.

Inventor： Yongjun Jeff Hu ,  Everett A. McTeer ,  John A. Smythe, III ,  Gurtej S. Sandhu

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3467 ,  C23C14/08 ,  C23C14/082 ,  C23C14/088 ,  C23C14/3407 ,  C23C14/3485 ,  C23C14/35 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/3322 ,  H01L21/02192 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625

Abstract: Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.

Abstract translation: 本文描述了使用高功率脉冲磁控溅射的存储器。 一个或多个方法实施例包括在使用高功率脉冲磁控溅射（HIPIMS）的结构上形成电阻式存储器材料，其中在具有大约400摄氏度或更低的温度的环境中在该结构上形成电阻性存储材料。

公开(公告)号：US20140268991A1

公开(公告)日：2014-09-18

申请号：US13829754

申请日：2013-03-14

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Yongjun J. Hu ,  Dale W. Collins ,  Everett A. McTeer

IPC: H01L45/00 ,  G11C13/00

CPC classification number: G11C13/0002 ,  G11C13/0007 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148

Abstract: Embodiments disclosed herein may relate to a memory cell comprising a chalcogenide material mixture having a chalcogenide composition and a metallic glass-forming composition.

Abstract translation: 本文公开的实施方案可以涉及包含具有硫族化物组合物和金属玻璃形成组合物的硫属化物材料混合物的存储单元。