公开(公告)号：US06969871B2

公开(公告)日：2005-11-29

申请号：US10438843

申请日：2003-05-16

申请人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

发明人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

IPC分类号： G02F1/1345 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L27/1285 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： In a film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high mobility semiconductor devices and an image display device using these semiconductor devices are realized.

摘要翻译： 在根据本发明的薄膜半导体器件中，在时间轴上和空间上调制来自固体激光器等的连续振荡光束，从而实现对晶体结构几乎最佳的晶体生长和晶体的生长速度 Si薄膜。 从而形成具有大直径的晶粒，在其晶界处没有突起的平坦度和受控的表面取向。 通过形成具有这些晶粒的通道，实现了高迁移率半导体器件和使用这些半导体器件的图像显示器件。

公开(公告)号：US20050255679A1

公开(公告)日：2005-11-17

申请号：US11186907

申请日：2005-07-22

申请人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

发明人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Mitsuharu Tai ,  Sedng-Kee Park ,  Takeo Shiba

IPC分类号： G02F1/1345 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L21/00

CPC分类号： H01L27/1285 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02609 ,  H01L21/02675 ,  H01L21/02691 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： In a thin film semiconductor device according to the present invention, a continuous oscillating light beam from a solid laser or the like is modulated on time axis and spatially, thereby realizing crystal growth that is nearly optimum for a crystal structure and a growth speed of crystals in a Si thin film. Crystal grains with a large diameter, flatness with no projections at their grain boundaries, and controlled surface orientations are thereby formed. By forming channels with these crystal grains, high-mobility semiconductor devices and an image display device using these semiconductor devices are realized.

摘要翻译： 在根据本发明的薄膜半导体器件中，在时间轴上调制来自固体激光器等的连续振荡光束，从而实现对于晶体结构和晶体生长速度几乎最佳的晶体生长 在Si薄膜中。 从而形成具有大直径的晶粒，在其晶界处没有突起的平坦度和受控的表面取向。 通过形成具有这些晶粒的沟道，实现了高迁移率半导体器件和使用这些半导体器件的图像显示器件。

公开(公告)号：US20050127361A1

公开(公告)日：2005-06-16

申请号：US11047620

申请日：2005-02-02

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L31/113

CPC分类号： H01L21/02686 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78678

摘要： A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm−3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm−3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.

摘要翻译： 薄膜半导体器件具有膜厚度为200nm以下的半导体薄膜。 半导体薄膜形成在电介质基板上，其翘曲点为600℃以下。 半导体薄膜具有其缺陷密度为1×10 -3 -3 -3以下的第一半导体薄膜区域和具有第一半导体薄膜区域的区域 1×10 3 -3 -3以上的缺陷密度以条纹的形式交替设置。 第一半导体薄膜区域的宽度大于半导体薄膜区域的宽度。 控制电介质基板上晶界的晶界，晶粒尺寸和取向，从而获得高品质的薄膜半导体器件。

公开(公告)号：US20050095822A1

公开(公告)日：2005-05-05

申请号：US11004858

申请日：2004-12-07

申请人： Seong-Kee Park ,  Shinya Yamaguchi ,  Mutsuko Hatano ,  Takeo Shiba

发明人： Seong-Kee Park ,  Shinya Yamaguchi ,  Mutsuko Hatano ,  Takeo Shiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/04 ,  H01L29/786 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  C30B1/00 ,  H01L21/36

CPC分类号： H01L21/02609 ,  H01L21/02675 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/66772 ,  H01L29/78654 ,  H01L29/78696

摘要： A method of forming thin-film semiconductor device is provided in which an island region of an isolated single-crystal thin-film is formed on an entire surface or within a specific region of an insulating film by utilizing cohesion phenomena due to the surface tension of a melted semiconductor, wherein more than one active region of a thin-film transistor is formed in the island region.

摘要翻译： 提供一种形成薄膜半导体器件的方法，其中通过利用由于表面张力引起的内聚现象，在绝缘膜的整个表面或特定区域内形成隔离单晶薄膜的岛区 熔融的半导体，其中在岛状区域中形成有多于一个薄膜晶体管的有源区。

公开(公告)号：US06872977B2

公开(公告)日：2005-03-29

申请号：US10188817

申请日：2002-07-05

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  H01L31/036

CPC分类号： H01L21/02686 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/045 ,  H01L29/6675 ,  H01L29/66765 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/78678

摘要： A thin film semiconductor device has a semiconductor thin film with a film thickness of 200 nm or less. The semiconductor thin film is formed over a dielectric substrate with a warping point of 600° C. or lower. The semiconductor thin film has a region in which a first semiconductor thin film region with the defect density of 1×1017 cm−3 or less and a second semiconductor thin film region with the defect density of 1×1017 cm−3 or more are disposed alternately in the form of stripes. The width of the first semiconductor thin film region is larger than the width of the semiconductor thin film region. The grain boundaries, grain size and orientation of crystals over the dielectric substrate are controlled, so that a high quality thin film semiconductor device is obtained.

摘要翻译： 薄膜半导体器件具有膜厚度为200nm以下的半导体薄膜。 半导体薄膜形成在电介质基板上，其翘曲点为600℃以下。 半导体薄膜具有其缺陷密度为1×10 17 cm -3以下的第一半导体薄膜区域和缺陷密度为1×10 17 cm -3的第二半导体薄膜区域， 3>以上以条纹的形式交替配置。 第一半导体薄膜区域的宽度大于半导体薄膜区域的宽度。 控制电介质基板上晶界的晶界，晶粒尺寸和取向，从而获得高品质的薄膜半导体器件。

公开(公告)号：US06501095B2

公开(公告)日：2002-12-31

申请号：US09791827

申请日：2001-02-26

申请人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Takeo Shiba ,  Yoshinobu Kimura ,  Seong-Kee Park

发明人： Shinya Yamaguchi ,  Mutsuko Hatano ,  Takeo Shiba ,  Yoshinobu Kimura ,  Seong-Kee Park

IPC分类号： H01L2904

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： The present invention relates to a thin film transistor device, an object of the invention is to realize the thin film transistor device of high mobility by large-grain sizing (quasi single crystal) a low-temperature poly-Si thin film being an elemental material of the thin film transistor in a state trued up to a crystal orientation having the most stable lattice structure in consideration of strain at the interface with a substrate, and by controlling a crystal position. The object described above can be achieved by realizing a high mobility thin film transistor device in a manner forming a channel with crystal grains having large grain size and controlled crystal orientations by paying attention to a fact that a {110} surface of IV group crystal (crystal composed of either one or a mixed crystal of them selected from a group of C, Si, Ge, Sn, and Pb) has the smallest dangling bond density, by minimizing strain energy at the substrate interface, and by making crystal growth with selection of crystal orientations having growth lengths equivalent to channel lengths.

摘要翻译： 本发明涉及一种薄膜晶体管器件，其目的是通过大晶粒尺寸（准单晶）实现高迁移率的薄膜晶体管器件，作为元素材料的低温多晶硅薄膜 考虑到与衬底的界面处的应变，并且通过控制晶体位置，在处于具有最稳定的晶格结构的晶体取向的状态下的薄膜晶体管。通过实现高移动性可以实现上述目的 薄膜晶体管器件以通过注意以下事实来形成具有大晶粒尺寸和晶体取向晶体的沟道的方式：注意以下事实：IV族晶体的{110}表面（由它们中的一种或其混晶构成的晶体被选择 通过使基板界面处的应变能最小化，并且通过选择使晶体生长，从C，Si，Ge，Sn和Pb组中获得最小的悬空键密度 具有等同于通道长度的生长长度的晶体取向。

公开(公告)号：US20080023704A1

公开(公告)日：2008-01-31

申请号：US11782701

申请日：2007-07-25

申请人： TAKESHI NODA ,  Takahiro Kamo ,  Eiji Oue ,  Mutsuko Hatano ,  Takeshi Sato

发明人： TAKESHI NODA ,  Takahiro Kamo ,  Eiji Oue ,  Mutsuko Hatano ,  Takeshi Sato

IPC分类号： H01L29/04 ,  H01L21/00

CPC分类号： H01L29/04 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02691 ,  H01L27/1248 ,  H01L27/1285

摘要： The present invention obtains a system-in-panel display device using a high-performance thin film transistor by suppressing aggregation of a molten semiconductor at the time of allowing strip-like pseudo-single crystal to grow continuously with a direction control by radiating beams of continuous oscillation laser to a semiconductor film made of silicon while scanning. A display device includes a silicon nitride film formed on the insulation substrate, a silicon oxide film formed on the silicon nitride film, a semiconductor film formed on the silicon oxide film, and a thin film transistor which uses the semiconductor film. Here, the silicon oxide film is constituted of a first silicon oxide film formed using SiH4 and N2O as raw material gases and a second silicon oxide film formed using a TEOS gas as a raw material gas, and the semiconductor film is made of pseudo-single crystal having strip-like grains.

摘要翻译： 本发明通过抑制带状伪单晶在通过辐射光束的方向控制而连续生长时，通过抑制熔融半导体的聚集来获得使用高性能薄膜晶体管的面板内系统显示装置 在扫描时对由硅制成的半导体膜进行连续振荡激光。 显示装置包括形成在绝缘基板上的氮化硅膜，形成在氮化硅膜上的氧化硅膜，形成在氧化硅膜上的半导体膜，以及使用该半导体膜的薄膜晶体管。 这里，氧化硅膜由使用SiH 4 N 2和N 2 O作为原料气体形成的第一氧化硅膜和使用TEOS形成的第二氧化硅膜构成 气体作为原料气体，半导体膜由具有带状粒子的假单晶构成。

公开(公告)号：US08963171B2

公开(公告)日：2015-02-24

申请号：US13792446

申请日：2013-03-11

申请人： Takahide Kuranaga ,  Takashi Hattori ,  Naoya Okada ,  Mutsuko Hatano

发明人： Takahide Kuranaga ,  Takashi Hattori ,  Naoya Okada ,  Mutsuko Hatano

IPC分类号： H01L51/50 ,  H01L21/00 ,  H01J1/62 ,  H01L51/52 ,  G02F1/1333

CPC分类号： H01L51/5253 ,  G02F1/133351 ,  H01L51/5256 ,  H01L2251/566

摘要： An image display device includes a resin film, an organic film which is formed above the resin film, a circuit layer which is formed above the organic film and includes at least a thin film transistor, and a barrier layer which is formed between the organic film and the circuit layer. The organic film has a first surface which faces the circuit layer and a side surface which crosses the first surface. The barrier layer covers the first surface and the side surface.

摘要翻译： 图像显示装置包括树脂膜，形成在树脂膜上方的有机膜，形成在有机膜上方并且至少包括薄膜晶体管的电路层，以及形成在有机膜之间的阻挡层 和电路层。 有机膜具有面向电路层的第一表面和与第一表面交叉的侧表面。 阻挡层覆盖第一表面和侧表面。

公开(公告)号：US08139173B2

公开(公告)日：2012-03-20

申请号：US12216581

申请日：2008-07-08

申请人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Mieko Matsumura

发明人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Mieko Matsumura

IPC分类号： G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/1368 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/13613

摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.

摘要翻译： 具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极 与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

公开(公告)号：US07977675B2

公开(公告)日：2011-07-12

申请号：US12423053

申请日：2009-04-14

申请人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Hiroyuki Uchiyama

发明人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Hiroyuki Uchiyama

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/7869

摘要： A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.

摘要翻译： 具有高性能和小变化的金属氧化物半导体器件。 它是一种使用金属氧化物膜作为沟道的场效应晶体管，其包括沟道区和源极区，并且包括具有比金属氧化物中的沟道区更低的氧含量的漏区，其中沟道区表现出半导体 特性和氧含量随着表面深度的减小而减小。