公开(公告)号：US20090215253A1

公开(公告)日：2009-08-27

申请号：US12196988

申请日：2008-08-22

Applicant: Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

Inventor： Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

IPC: H01L21/3115 ,  H01L21/336

CPC classification number: H01L21/02332 ,  H01L21/0234 ,  H01L21/265 ,  H01L21/28061 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.

Abstract translation: 本发明包括将氮掺入含氧化硅的层中的方法。 将含氧化硅的层暴露于含氮等离子体中以将氮引入层中。 氮气随后在层内热退火以将至少一些氮与硅结合在层内。 本发明还包括形成晶体管的方法。 在半导体衬底上形成栅氧化层。 栅氧化层包括二氧化硅。 将栅极氧化层暴露于含氮等离子体中以将氮引入层中，并且在暴露期间该层保持在小于或等于400℃。 随后，层内的氮被热退火以将至少大部分氮与硅结合。 在栅极氧化物层上形成至少一个导电层。 源极/漏极区域形成在半导体衬底内，并且通过至少一个导电层彼此门控连接。 本发明还包括晶体管结构。

公开(公告)号：US07560390B2

公开(公告)日：2009-07-14

申请号：US11144543

申请日：2005-06-02

Applicant: Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

Inventor： Sanket Sant ,  Gurtej Sandhu ,  Neal R. Rueger

IPC: H01L21/302

CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/76802 ,  H01L27/1052

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract translation: 使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。 去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。 然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。 或者，代替沉积交替层，无定形碳沉积在剩余的间隔物周围，随后在无定形碳上形成一对间隔物的多个循环，去除一对隔离物中的一个并沉积无定形碳层。 可以重复循环以形成所需的图案。 由于图案中的某些特征的临界尺寸可以通过控制间隔物之间​​的间隔的宽度来设定，所以可以形成特别小的掩模特征。

公开(公告)号：US07432166B2

公开(公告)日：2008-10-07

申请号：US10050373

申请日：2002-01-15

Applicant: Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

Inventor： Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

IPC: H01L21/00

CPC classification number: H01L21/02332 ,  H01L21/0234 ,  H01L21/265 ,  H01L21/28061 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.

Abstract translation: 本发明包括将氮掺入含氧化硅的层中的方法。 将含氧化硅的层暴露于含氮等离子体中以将氮引入层中。 氮气随后在层内热退火以将至少一些氮与硅结合在层内。 本发明还包括形成晶体管的方法。 在半导体衬底上形成栅氧化层。 栅氧化层包括二氧化硅。 将栅极氧化层暴露于含氮等离子体中以将氮引入层中，并且在暴露期间该层保持在小于或等于400℃。 随后，层内的氮被热退火以将至少大部分氮与硅结合。 在栅极氧化物层上形成至少一个导电层。 源极/漏极区域形成在半导体衬底内，并且通过至少一个导电层彼此门控连接。 本发明还包括晶体管结构。

公开(公告)号：US07262555B2

公开(公告)日：2007-08-28

申请号：US11083433

申请日：2005-03-17

Applicant: Neal R. Rueger ,  Gurtej S. Sandhu

Inventor： Neal R. Rueger ,  Gurtej S. Sandhu

IPC: H01J7/24 ,  B44C1/22

CPC classification number: H01J37/3233 ,  H01J37/32366

Abstract: A method and system for plasma generation and processing includes a plurality of beam generators each locally controllable and configured for operation upon a single substrate. A control circuit couples to each of the plurality of beam generators with the control circuit configured to independently regulate at least a portion of the plurality of beam generators. A process gas is introduced into an area above a surface of a substrate. A plurality of beam generators is locally controlled and is directed at the process gas. The beam generators independently emit electrons as controlled and at least a portion of the process gas is converted into plasma according to the electrons emitted from the plurality of the independently controllable beam generators. The substrate is processed using the plasma according to local control of each of the plurality of beam generators.

Abstract translation: 用于等离子体产生和处理的方法和系统包括多个光束发生器，每个光束发生器可局部地可控制并且被配置为在单个衬底上操作。 控制电路耦合到多个光束发生器中的每一个，控制电路被配置为独立地调节多个光束发生器的至少一部分。 将工艺气体引入衬底表面上方的区域。 多个束发生器被局部控制并且被引导到处理气体。 束发生器独立地发射受电子的电子，并且至少一部分处理气体根据从多个可独立控制的光束发生器发射的电子转换为等离子体。 根据多个光束发生器中的每一个的局部控制，使用等离子体处理衬底。

公开(公告)号：US07114404B2

公开(公告)日：2006-10-03

申请号：US10674963

申请日：2003-09-29

Applicant: Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

Inventor： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

IPC: F17D3/00 ,  F16K37/00 ,  H01L21/02 ,  H01L21/66

CPC classification number: G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T29/41 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

公开(公告)号：US06950178B2

公开(公告)日：2005-09-27

申请号：US10682017

申请日：2003-10-09

Applicant: Neal R. Rueger ,  Kevin T. Hamer

Inventor： Neal R. Rueger ,  Kevin T. Hamer

IPC: G01J3/30 ,  G01J3/443 ,  G01N21/68

CPC classification number: G01J3/443 ,  G01N21/68

Abstract: A method and system are presented for monitoring the optical emissions associated with a plasma used in integrated circuit fabrication. The optical emissions are processed by an optical spectrometer to obtain a spectrum. The spectrum is analyzed to determine the presence of particular disassociated species which are indicative of the presence of a suitable plasma and which are desired for a deposition, etching, or cleaning process.

Abstract translation: 提出了一种用于监测与集成电路制造中使用的等离子体相关的光发射的方法和系统。 光发射由光谱仪处理以获得光谱。 分析光谱以确定指示合适的等离子体的存在并且对于沉积，蚀刻或清洁过程是期望的特定解离物种的存在。

公开(公告)号：US06936547B2

公开(公告)日：2005-08-30

申请号：US10284681

申请日：2002-10-31

Applicant: Weimin Li ,  Neal R. Rueger ,  Li Li ,  Ross S. Dando ,  Kevin T. Hamer ,  Allen P. Mardian

Inventor： Weimin Li ,  Neal R. Rueger ,  Li Li ,  Ross S. Dando ,  Kevin T. Hamer ,  Allen P. Mardian

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/507 ,  H01L21/31

CPC classification number: C23C16/45565 ,  C23C16/455 ,  C23C16/507

Abstract: The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.

公开(公告)号：US06908807B2

公开(公告)日：2005-06-21

申请号：US10108013

申请日：2002-03-26

Applicant: Neal R. Rueger

Inventor： Neal R. Rueger

IPC: H01L21/762 ,  H01L21/8238

CPC classification number: H01L21/76229

Abstract: The invention includes a method of forming a semiconductor construction. A semiconductor substrate is placed within a reaction chamber. The substrate comprises a center region and an edge region surrounding the center region. The substrate comprises openings within the center region, and openings within the edge region. While the substrate is within the reaction chamber, a layer of insulative material is formed across the substrate. The layer is thicker over the one of the center region and edge region than over the other of the center region and edge region. The layer is exposed to an etch which removes the insulative material faster from over the one or the center region and edge region than from over the other of the center region and edge region.

Abstract translation: 本发明包括形成半导体结构的方法。 将半导体衬底放置在反应室内。 衬底包括中心区域和围绕中心区域的边缘区域。 基板包括中心区域内的开口，以及边缘区域内的开口。 当衬底在反应室内时，跨越衬底形成一层绝缘材料。 该层在中心区域和边缘区域中的一个上比在中心区域和边缘区域中的另一个厚。 该层被暴露于从中心区域和边缘区域之上的一个或中心区域和边缘区域上更快地去除绝缘材料的蚀刻，而不是从中心区域和边缘区域的另一个移除绝缘材料。

公开(公告)号：US06660657B1

公开(公告)日：2003-12-09

申请号：US09633556

申请日：2000-08-07

Applicant: Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

Inventor： Gurtej S. Sandhu ,  John T. Moore ,  Neal R. Rueger

IPC: H01L2131

CPC classification number: H01L21/02332 ,  H01L21/0234 ,  H01L21/265 ,  H01L21/28061 ,  H01L21/28167 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

Abstract: The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.

Abstract translation: 本发明包括将氮掺入含氧化硅的层中的方法。 将含氧化硅的层暴露于含氮等离子体中以将氮引入层中。 氮气随后在层内热退火以将至少一些氮与硅结合在层内。 本发明还包括形成晶体管的方法。 在半导体衬底上形成栅氧化层。 栅氧化层包括二氧化硅。 将栅极氧化层暴露于含氮等离子体中以将氮引入层中，并且在暴露期间该层保持在小于或等于400℃。 随后，层内的氮被热退火以将至少大部分氮与硅结合。 在栅极氧化物层上形成至少一个导电层。 源极/漏极区域形成在半导体衬底内，并且通过至少一个导电层彼此门控连接。 本发明还包括晶体管结构。

公开(公告)号：US06627465B2

公开(公告)日：2003-09-30

申请号：US09945161

申请日：2001-08-30

Applicant: Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

Inventor： Gurtej Singh Sandhu ,  Sujit Sharan ,  Neal R. Rueger ,  Allen P. Mardian

IPC: H01L2166

CPC classification number: G01F1/40 ,  G01F1/42 ,  G01P13/0006 ,  G01P13/0013 ,  G01P13/0033 ,  G05D7/0635 ,  Y10T29/41 ,  Y10T137/0396 ,  Y10T137/7722 ,  Y10T137/775 ,  Y10T137/8242

Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received. Other embodiments of the gate position sensor are described herein, as well as systems and methods that incorporate the novel MFC within a semiconductor manufacturing process.

Abstract translation: 提供了用于检测质量流量控制器（MFC）中的流量的系统和方法。 MFC中的门的位置被感测或以其他方式确定以监视通过MFC的流动并立即或几乎立即检测到流动故障。 在本发明的一个实施例中，提供了一种新颖的MFC。 MFC包括孔口，质量流量控制门，致动器和门位置传感器。 致动器移动控制门以控制通过孔口的流动。 门位置传感器确定门位置和/或门移动以监视流量并立即或几乎立即检测到流动故障。 根据本发明的一个实施例，门位置传感器包括用于发送信号的发射机和用于接收信号的接收机，使得接收机基于所接收的信号提供门的位置的指示。 这里描述了门位置传感器的其他实施例，以及在半导体制造过程中并入新颖的MFC的系统和方法。