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公开(公告)号：US07887910B2
公开(公告)日：2011-02-15
申请号：US11665182
申请日：2006-05-11
IPC分类号： B32B5/16
CPC分类号： B32B5/16 , G02B3/00 , G02B3/02 , G02B5/188 , G02B5/1895 , Y10T428/24413 , Y10T428/25 , Y10T428/265 , Y10T428/31598 , Y10T428/31609
摘要： A laminated optical element includes an optical substrate made of an optical material, an intermediate layer provided on the optical substrate, and an optical resin layer provided on the intermediate layer. The optical resin layer is made of a resin composed of an organometallic polymer having an -M-O-M- bond (M is a metal atom), a metal alkoxide and/or a hydrolysate thereof having only one hydrolyzable group, and an organic polymer having a urethane bond and a methacryloxy group or an acryloxy group. The intermediate layer is obtained by dispersing metal oxide microparticles in a matrix resin composed of a metal alkoxide having a radical polymerizable group and a hydrolyzable group and/or a hydrolysate thereof.
摘要翻译： 层压光学元件包括由光学材料制成的光学基板，设置在光学基板上的中间层和设置在中间层上的光学树脂层。 光学树脂层由具有-MOM-键（M为金属原子）的有机金属聚合物，仅具有一个可水解基团的金属醇盐和/或其水解产物组成的树脂和具有氨基甲酸酯的有机聚合物 键和甲基丙烯酰氧基或丙烯酰氧基。 中间层通过将金属氧化物微粒分散在由具有自由基聚合性基团的金属醇盐和可水解基团和/或其水解产物构成的基质树脂中而获得。
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公开(公告)号：US20100246100A1
公开(公告)日：2010-09-30
申请号：US12720876
申请日：2010-03-10
申请人： Takashi UMEMOTO , Nobuhiko Hayashi
发明人： Takashi UMEMOTO , Nobuhiko Hayashi
IPC分类号： H01G9/08
摘要： A solid electrolytic capacitor includes at least one capacitor element in which the other end of an anode lead extends beyond an exposed portion of an electrolyte layer exposed from a cathode layer. The solid electrolytic capacitor further includes: an anode terminal connected to the other end of the anode lead, a cathode terminal connected to the cathode layer, a resin layer and a resin outer package covering the capacitor element and the resin layer. The resin layer covering the exposed portion of the electrolyte layer, the other end of the anode lead, and a connecting part between the other end of the anode lead and the anode terminal. The resin layer includes a first resin layer covering the exposed portion and a second resin layer covering the first resin layer, the first resin layer being softer than the second resin layer.
摘要翻译： 固体电解电容器包括至少一个电容器元件，其中阳极引线的另一端延伸超过暴露于阴极层的电解质层的暴露部分。 固体电解电容器还包括：连接到阳极引线的另一端的阳极端子，连接到阴极层的阴极端子，覆盖电容器元件和树脂层的树脂层和树脂外部封装。 覆盖电解质层的暴露部分的树脂层，阳极引线的另一端以及阳极引线和阳极端子的另一端之间的连接部分。 树脂层包括覆盖暴露部分的第一树脂层和覆盖第一树脂层的第二树脂层，第一树脂层比第二树脂层软。
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公开(公告)号：US07457507B2
公开(公告)日：2008-11-25
申请号：US10586664
申请日：2005-11-30
IPC分类号： G02B6/00
摘要： An organometallic polymer material is obtained which excels in translucency, shows improved hardness after it is cured and exhibits high reliability at high temperature and high humidity.Characteristically, the organometallic polymer material contains an organometallic polymer having an —M—O—M— bond (M indicates a metal atom), a metal alkoxide having a single hydrolyzable group and/or its hydrolysate and an organic polymer having a urethane bond and a methacryloxy or acryloxy group, and preferably further contains an organic anhydride and/or an organic acid.
摘要翻译： 得到透明性优异的有机金属聚合物材料，其在固化后显示出提高的硬度，并且在高温和高湿度下表现出高可靠性。 特征在于，有机金属聚合物材料含有具有-MOM-键（M表示金属原子）的有机金属聚合物，具有单个可水解基团的金属醇盐和/或其水解产物和具有氨基甲酸酯键和甲基丙烯酰氧基或丙烯酰氧基的有机聚合物 并且优选还包含有机酸酐和/或有机酸。
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公开(公告)号：US20080232762A1
公开(公告)日：2008-09-25
申请号：US10586664
申请日：2005-11-30
摘要： An organometallic polymer material is obtained which excels in translucency, shows improved hardness after it is cured and exhibits high reliability at high temperature and high humidity.Characteristically, the organometallic polymer material contains an organometallic polymer having an -M-O-M- bond (M indicates a metal atom), a metal alkoxide having a single hydrolyzable group and/or its hydrolysate and an organic polymer having a urethane bond and a methacryloxy or acryloxy group, and preferably further contains an organic anhydride and/or an organic acid.
摘要翻译： 得到透明性优异的有机金属聚合物材料，其在固化后显示出提高的硬度，并且在高温和高湿度下表现出高可靠性。 特征在于，有机金属聚合物材料含有具有-MOM-键（M表示金属原子）的有机金属聚合物，具有单个可水解基团的金属醇盐和/或其水解产物和具有氨基甲酸酯键和甲基丙烯酰氧基或丙烯酰氧基的有机聚合物 并且优选还包含有机酸酐和/或有机酸。
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公开(公告)号：US07279344B2
公开(公告)日：2007-10-09
申请号：US11518174
申请日：2006-09-11
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01S5/22 , H01S5/3063 , H01S5/3086 , H01S5/309 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by forming a nitride-based semiconductor layer having excellent crystallinity without performing a long etching process. This nitride-based semiconductor element and the method thereof includes forming a mask layer having a recess portion on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer. A nitride-based semiconductor layer is laterally grown on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer. Thus, the strain of the laterally grown nitride-based semiconductor layer is so relaxed that the crystallinity of the nitride-based semiconductor layer is improved.
摘要翻译： 通过在不进行长蚀刻处理的情况下形成具有优异的结晶性的氮化物系半导体层，可以获得元素特性优异的氮化物系半导体元件。 这种氮化物基半导体元件及其方法包括在底层的基本平坦的上表面上形成具有凹部的掩模层，以部分地暴露底层的上表面。 在掩模层的凹部上形成空隙的同时，在底层的露出部和掩模层上横向生长氮化物系半导体层。 因此，横向生长的氮化物基半导体层的应变如此松弛，从而提高了氮化物基半导体层的结晶度。
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公开(公告)号：US07181121B2
公开(公告)日：2007-02-20
申请号：US10850463
申请日：2004-05-21
申请人： Keiichi Kuramoto , Youhei Nakagawa , Mitsuaki Matsumoto , Hiroaki Izu , Hitoshi Hirano , Nobuhiko Hayashi
发明人： Keiichi Kuramoto , Youhei Nakagawa , Mitsuaki Matsumoto , Hiroaki Izu , Hitoshi Hirano , Nobuhiko Hayashi
IPC分类号： G02B6/10
CPC分类号： G02B6/1221 , G02B6/125 , G02B2006/12126
摘要： An optical device includes a substrate, a core provided on the substrate, a first clad and a second clad formed around the core. The optical device further includes a light absorber layer, provided on the substrate, which absorbs light leaked from the core. The light absorber layer is formed of, for instance, the same material as that constituting the core.
摘要翻译： 光学装置包括基板，设置在基板上的芯，围绕芯部形成的第一包层和第二包层。 光学装置还包括设置在基板上的吸收层，其吸收从芯部泄漏的光。 光吸收层由例如与构成芯的材料相同的材料形成。
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公开(公告)号：US07109530B2
公开(公告)日：2006-09-19
申请号：US10796154
申请日：2004-03-10
IPC分类号： H01L33/00
CPC分类号： H01L21/02458 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01S5/22 , H01S5/3063 , H01S5/3086 , H01S5/309 , H01S5/34333 , H01S2301/173 , H01S2304/12
摘要： A nitride-based semiconductor element having excellent element characteristics is obtained by fabricating a nitride-based semiconductor layer having excellent crystallinity without performing extended etching. The nitride-based semiconductor element comprises a mask layer, having a recess portion, formed on a substantially flat upper surface of an underlayer to partially expose the upper surface of the underlayer, a nitride-based semiconductor layer formed on the exposed part of the underlayer and the mask layer while forming a void on the recess portion of the mask layer, and a nitride-based semiconductor element layer, formed on the nitride-based semiconductor layer, having an element region. During laterally growth, strain is relaxed thereby improving crystallinity. The underlayer is formed in a substantially flat shape, thereby avoiding extended etching.
摘要翻译： 通过在不进行延伸蚀刻的情况下制造具有优异结晶性的氮化物系半导体层，可以获得元素特性优异的氮化物系半导体元件。 氮化物系半导体元件包括具有凹部的掩模层，形成在下层的大致平坦的上表面上以部分地暴露下层的上表面;形成在底层的露出部分上的氮化物系半导体层 以及掩模层，同时在掩模层的凹部上形成空隙，以及形成在具有元件区域的氮化物基半导体层上的氮化物基半导体元件层。 在横向生长期间，松弛应变，从而提高结晶度。 底层形成为大致平坦的形状，从而避免延长蚀刻。
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公开(公告)号：US20050207723A1
公开(公告)日：2005-09-22
申请号：US11057255
申请日：2005-02-15
CPC分类号： G02B6/1245 , G02B6/12004 , G02B6/1221 , G02B6/30 , G02B6/422
摘要： Disclosed herein is an optical waveguide comprising a core layer to be an optical transmission region, an upper clad layer and a lower clad layer covering the core layer, in which the core layer, the upper clad layer and the lower clad layer are formed from resin materials, characterized in that a microlens made of a material having a higher refractive index than that of a material constituting said core layer is disposed in the vicinity of an end face of said core layer.
摘要翻译： 本发明公开了一种光波导，其包括作为光透射区域的芯层，覆盖芯层的上覆盖层和下覆盖层，其中芯层，上覆层和下覆盖层由树脂形成 材料，其特征在于，由具有比构成所述芯层的材料的折射率高的材料制成的微透镜设置在所述芯层的端面附近。
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公开(公告)号：US20050205885A1
公开(公告)日：2005-09-22
申请号：US11059648
申请日：2005-02-17
CPC分类号： G02B6/138
摘要： Disclosed herein is an optical waveguide comprising a core layer to be an optical waveguide region, an upper clad layer covering the core layer and a lower clad layer, characterized in that an ultraviolet control region for preventing ultraviolet light from entering is provided at any one location of under the lower clad layer, on an interface of the lower clad layer and the upper clad layer, and on the upper clad layer. And a method of fabricating this optical waveguide is also disclosed.
摘要翻译： 本文公开了一种光波导，其包括作为光波导区域的芯层，覆盖芯层的上覆层和下包层，其特征在于，在任何一个位置处设置用于防止紫外线进入的紫外线控制区域 在下包层的下面，在下包层和上包层的界面上，在上包层上。 并且还公开了制造该光波导的方法。
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70.发明授权Nitride based semiconductor light emitting device and nitride based semiconductor laser device 失效基于氮化物的半导体发光器件和氮化物基半导体激光器件公开(公告)号：US06914922B2
公开(公告)日：2005-07-05
申请号：US09898043
申请日：2001-07-05
申请人： Nobuhiko Hayashi , Takenori Goto , Takashi Kano , Yasuhiko Nomura
发明人： Nobuhiko Hayashi , Takenori Goto , Takashi Kano , Yasuhiko Nomura
CPC分类号： H01S5/32341 , H01L33/14 , H01L33/32 , H01S5/2004 , H01S5/2218 , H01S5/2222 , H01S2301/18
摘要： A semiconductor laser device is constructed by stacking a buffer layer, an undoped GaN layer, an n-GaN contact layer, an n-InGaN crack preventing layer, an n-AlGaN cladding layer, a light emitting layer, a p-AlGaN cladding layer, and a p-GaN contact layer in this order. A ridge portion comprising the p-GaN contact layer and the p-AlGaN cladding layer is formed, and the thickness of the p-AlGaN cladding layer in the ridge portion is less than 0.3 μm.
摘要翻译： 半导体激光器件通过堆叠缓冲层，未掺杂的GaN层，n-GaN接触层，n-InGaN防裂层，n-AlGaN包层，发光层，p-AlGaN包层 ，和p-GaN接触层。 形成包含p-GaN接触层和p-AlGaN包覆层的脊部，并且脊部中的p-AlGaN包层的厚度小于0.3μm。
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