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    Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures
    63.
    发明授权
    Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures 失效
    用于制造超高宽比，无晶圆的微光机电结构的掩模工艺

    公开(公告)号：US5628917A

    公开(公告)日：1997-05-13

    申请号：US383524

    申请日：1995-02-03

    Applicant: Noel C. MacDonald ,  Ali Jazairy

    Inventor： Noel C. MacDonald ,  Ali Jazairy

    IPC: B81B3/00 ,  B81C1/00 ,  B44C1/22 ,  H01L21/00

    CPC classification number: B81B3/0035 ,  B81C1/00428

    Abstract: A masking process resulting from a modified version of the SCREAM process is used for the fabrication of ultra-high aspect ratio, wafer-free, single crystal silicon movable micromechanical devices and frame structures of large vertical depth and narrow linewidth. The process is single-mask, self-aligned and allows the formation of releasable three-dimensional frame-like objects of arbitrary shape which can be made up to about half the wafer thickness in depth and can be subsequently lifted off the substrate and placed on any other material to be used as a mask or to be integrated with other devices. The process consists of a single lithography step and a repeated sequence of thermal oxidations and reactive ion etchings.

    Abstract translation: 由SCREAM工艺的改进版本产生的掩模工艺用于制造超高宽比，无晶圆，单晶硅可移动微机械器件和大垂直深度和窄线宽的框架结构。 该方法是单掩模，自对准并且允许形成任意形状的可释放的三维框架状物体，其可以被构成深度约为晶片厚度的大约一半，并且随后可以从衬底上提起并放置在 任何其他用作掩模或与其他设备集成的材料。 该过程由单个光刻步骤和重复的热氧化和反应离子蚀刻顺序组成。

    Compound stage MEM actuator suspended for multidimensional motion
    64.
    发明授权
    Compound stage MEM actuator suspended for multidimensional motion 失效
    复合级MEM执行器用于多维运动

    公开(公告)号：US5536988A

    公开(公告)日：1996-07-16

    申请号：US69725

    申请日：1993-06-01

    Applicant: Z. Lisa Zhang ,  Noel C. MacDonald

    Inventor： Z. Lisa Zhang ,  Noel C. MacDonald

    IPC: B81B1/00 ,  B81B3/00 ,  H02N1/00

    CPC classification number: H02N1/008 ,  B81B3/0021 ,  B81B3/0062 ,  B81C1/0019 ,  B82Y15/00 ,  B81B2201/11 ,  B81B2203/053 ,  B81B2203/055 ,  B81B2207/07

    Abstract: A microelectromechanical compound stage microactuator assembly capable of motion along x, y, and z axes for positioning and scanning integrated electromechanical sensors and actuators is fabricated from submicron suspended single crystal silicon beams. The microactuator incorporates an interconnect system for mechanically supporting a central stage and for providing electrical connections to componants of the microactuator and to devices carried thereby. The microactuator is fabricated using a modified single crystal reactive etching and metallization process which incorporates an isolation process utilizing thermal oxidation of selected regions of the device to provide insulating segments which define conductive paths from external circuitry to the actuator components and to microelectronic devices such as gated field emitters carried by the actuator.

    Abstract translation: 由亚微米悬浮单晶硅光束制造能够沿x，y和z轴运动的微机电复合级微致动器组件，用于定位和扫描集成的机电传感器和致动器。 该微型致动器包括用于机械地支撑中央级并用于提供与微型致动器的部件的电连接以及由此承载的装置的互连系统。 使用改进的单晶反应蚀刻和金属化工艺制造微致动器，其包括利用设备的选定区域的热氧化的隔离工艺，以提供绝缘段，其限定从外部电路到致动器部件的导电路径以及限定门控的微电子器件 由致动器承载的场致发射体。

    Methods of fabricating integrated, aligned tunneling tip pairs
    65.
    发明授权
    Methods of fabricating integrated, aligned tunneling tip pairs 失效
    制造集成的对准的隧道尖端对的方法

    公开(公告)号：US5449903A

    公开(公告)日：1995-09-12

    申请号：US76906

    申请日：1993-06-15

    Applicant: Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    Inventor： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    IPC: G01B7/34 ,  B81B1/00 ,  B81B3/00 ,  G01B7/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/12 ,  G01Q70/14 ,  H01J37/28 ,  H02N1/00 ,  G21K5/10

    CPC classification number: H02N1/008 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/16 ,  Y10S977/874

    Abstract: Self-aligned, opposed, nanometer dimension tips are fabricated in pairs, one of each pair being located on a movable, single crystal beam, with the beam being movable in three dimensions with respect to a substrate carrying the other tip of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers formed on the supporting beams. Spring means in each beam allow axial motion of the beam. The tips and beams are fabricated from single crystal silicon substrate, and the tips may be electrically isolated from the substrate by fabricating insulating segments in the beam structure.

    Abstract translation: 自对准的，相对的，纳米尺寸的尖端成对制造，每对中的一个位于可移动的单晶束上，其中光束可相对于承载一对的另一个尖端的基板在三维空间中移动。 一个尖端相对于另一个尖端的运动由形成在支撑梁上的换能器控制或感测。 每个梁中的弹簧装置允许梁的轴向运动。 尖端和光束由单晶硅衬底制成，并且尖端可以通过在梁结构中制造绝缘段而与衬底电隔离。

    Submicron isolated, released resistor structure
    67.
    发明授权
    Submicron isolated, released resistor structure 失效
    亚微米隔离，释放电阻结构

    公开(公告)号：US5287082A

    公开(公告)日：1994-02-15

    申请号：US906877

    申请日：1992-07-02

    Applicant: Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    Inventor： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    IPC: H01L21/02 ,  H01C1/012

    CPC classification number: H01L28/20

    Abstract: A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.

    Abstract translation: 具有可忽略的寄生电容（40），（42），（44）的亚微米电阻器包括承载在单晶硅晶片上的隔离放电光束（20）。 通过在衬底（24）中限定电阻器区域，掺杂该区域以产生期望的电阻率，以及围绕该区域蚀刻以产生电阻岛，来制造电阻器。 然后通过氧化将岛与基底隔离，并通过去除氧化物来产生隔离的释放的束（20）。

    Microdynamic release structure
    69.
    发明授权
    Microdynamic release structure 失效
    微动力释放结构

    公开(公告)号：US5072288A

    公开(公告)日：1991-12-10

    申请号：US313206

    申请日：1989-02-21

    Applicant: Noel C. MacDonald ,  Liang-Yuh Chen ,  Zuoying L. Zhang

    Inventor： Noel C. MacDonald ,  Liang-Yuh Chen ,  Zuoying L. Zhang

    IPC: B81C1/00 ,  H01H1/00 ,  H02N1/00

    CPC classification number: H02N1/008 ,  B82Y15/00 ,  H01H1/0094

    Abstract: A selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a substrate. Two beams form micromechanical tweezers that move in three dimensions by the application of potential differences between the beams, and between the beams and the silicon substrate. A high deposition rate selective tungsten CVD process is used to fabricate beams of greater than 3 micrometers thickness in patterned, CVD silicon dioxide trenches ion-implanted with silicon. Tweezers 200 micrometers in length with a cross section of 2.7 by 2.5 micrometers will close upon application of a voltage of less than 150 volts.

    Abstract translation: 使用选择性化学气相沉积（CVD）钨工艺在衬底上制造三维钨悬臂梁。 两个光束形成微机械镊子，其通过施加光束之间以及光束和硅衬底之间的电位差在三维中移动。 使用高沉积速率选择性钨CVD工艺来制造离子注入硅的图案化CVD二氧化硅沟槽中大于3微米厚度的光束。 长度为200微米，截面为2.7×2.5微米的镊子将在施加小于150伏的电压时闭合。

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