公开(公告)号：US5235187A

公开(公告)日：1993-08-10

申请号：US868138

申请日：1992-04-14

申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

IPC分类号： G01B7/34 ,  B81B1/00 ,  B81B3/00 ,  G01B7/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/12 ,  G01Q70/14 ,  H01J37/28 ,  H02N1/00

CPC分类号： H02N1/008 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/16 ,  Y10S977/874

摘要： Self-aligned, opposed, nanometer dimension tips are fabricated in pairs, one of each pair being located on a movable, single crystal beam, with the beam being movable in three dimensions with respect to a substrate carrying the other tip of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers formed on the supporting beams. Spring means in each beam allow axial motion of the beam. The tips and beams are fabricated from single crystal silicon substrate, and the tips may be electrically isolated from the substrate by fabricating insulating segments in the beam structure.

摘要翻译： 自对准的，相对的，纳米尺寸的尖端成对制造，每对中的一个位于可移动的单晶束上，其中光束可相对于承载一对的另一个尖端的基板在三维空间中移动。 一个尖端相对于另一个尖端的运动由形成在支撑梁上的换能器控制或感测。 每个梁中的弹簧装置允许梁的轴向运动。 尖端和光束由单晶硅衬底制成，并且尖端可以通过在梁结构中制造绝缘段而与衬底电隔离。

公开(公告)号：US5397904A

公开(公告)日：1995-03-14

申请号：US906873

申请日：1992-07-02

申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/73 ,  H01L29/786

CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/7317 ,  H01L29/78654 ,  H01L29/78696

摘要： A method for isolating transistors and a microstructure for providing isolation for transistors includes a beam located on a substrate. The beam is formed from the same material as the substrate, preferably single crystal silicon, and is released so as to be suspended in the cavity and spaced apart from the substrate. The beam is supported in the cavity by a cantilever structure or by spaced pedestals, or both. One or more transistors are fabricated in the beam, and are thus isolated from the substrate and may be isolated from each other if desired. Contact beams may also be provided to contact the transistor electrodes for interconnection of adjacent transistors or connection of the transistors to electrical circuitry on the substrate. The contact beams also provide mechanical support for the beams.Multiple beams in side-by-side arrays or stacked arrays may be provided.

摘要翻译： 用于隔离晶体管的方法和用于提供晶体管隔离的微结构包括位于衬底上的光束。 光束由与衬底相同的材料形成，优选为单晶硅，并且被释放以便悬挂在空腔中并与衬底间隔开。 梁通过悬臂结构或间隔开的支座或两者支撑在腔体中。 一个或多个晶体管制造在光束中，并且因此与衬底隔离，并且如果需要可以彼此隔离。 还可以提供接触光束以接触晶体管电极，用于相邻晶体管的互连或将晶体管连接到衬底上的电路。 接触梁还为梁提供机械支撑。 可以提供并排阵列或堆叠阵列中的多个光束。

公开(公告)号：US5449903A

公开(公告)日：1995-09-12

申请号：US76906

申请日：1993-06-15

申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

IPC分类号： G01B7/34 ,  B81B1/00 ,  B81B3/00 ,  G01B7/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/12 ,  G01Q70/14 ,  H01J37/28 ,  H02N1/00 ,  G21K5/10

CPC分类号： H02N1/008 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/16 ,  Y10S977/874

摘要： Self-aligned, opposed, nanometer dimension tips are fabricated in pairs, one of each pair being located on a movable, single crystal beam, with the beam being movable in three dimensions with respect to a substrate carrying the other tip of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers formed on the supporting beams. Spring means in each beam allow axial motion of the beam. The tips and beams are fabricated from single crystal silicon substrate, and the tips may be electrically isolated from the substrate by fabricating insulating segments in the beam structure.

摘要翻译： 自对准的，相对的，纳米尺寸的尖端成对制造，每对中的一个位于可移动的单晶束上，其中光束可相对于承载一对的另一个尖端的基板在三维空间中移动。 一个尖端相对于另一个尖端的运动由形成在支撑梁上的换能器控制或感测。 每个梁中的弹簧装置允许梁的轴向运动。 尖端和光束由单晶硅衬底制成，并且尖端可以通过在梁结构中制造绝缘段而与衬底电隔离。

公开(公告)号：US5287082A

公开(公告)日：1994-02-15

申请号：US906877

申请日：1992-07-02

申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

IPC分类号： H01L21/02 ,  H01C1/012

CPC分类号： H01L28/20

摘要： A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.

摘要翻译： 具有可忽略的寄生电容（40），（42），（44）的亚微米电阻器包括承载在单晶硅晶片上的隔离放电光束（20）。 通过在衬底（24）中限定电阻器区域，掺杂该区域以产生期望的电阻率，以及围绕该区域蚀刻以产生电阻岛，来制造电阻器。 然后通过氧化将岛与基底隔离，并通过去除氧化物来产生隔离的释放的束（20）。

公开(公告)号：US5179499A

公开(公告)日：1993-01-12

申请号：US868102

申请日：1992-04-14

申请人： Noel C. MacDonald ,  Jun J. Yao

发明人： Noel C. MacDonald ,  Jun J. Yao

IPC分类号： B81C1/00 ,  G01Q60/16 ,  H01H1/00 ,  H01H59/00 ,  H02N1/00

CPC分类号： H02N1/008 ,  B82Y35/00 ,  G01Q10/04 ,  H01H1/0094 ,  H01H2001/0068 ,  H01H2001/0078

摘要： Mechanically movable microstructure fabricated from a single crystal such as silicon and actuator structures for providing a high degree of controlled, precision motion of nanometer-scale.

摘要翻译： 由诸如硅和致动器结构的单晶制造的机械可移动微结构，用于提供纳米级的高度受控精密运动。

公开(公告)号：US07682956B2

公开(公告)日：2010-03-23

申请号：US11445067

申请日：2006-06-01

申请人： Masaru P. Rao ,  Marco F. Aimi ,  Noel C. MacDonald

发明人： Masaru P. Rao ,  Marco F. Aimi ,  Noel C. MacDonald

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： C23F4/00 ,  B81B2201/042 ,  B81B2203/033 ,  B81C1/00126 ,  B81C2201/0132 ,  Y10T29/49117

摘要： The present invention relates, in general, to a method for three-dimensional (3D) microfabrication of complex, high aspect ratio structures with arbitrary surface height profiles in metallic materials, and to devices fabricated in accordance with this process. The method builds upon anisotropic deep etching methods for metallic materials previously developed by the inventors by enabling simplified realization of complex, non-prismatic structural geometries composed of multiple height levels and sloping and/or non-planar surface profiles. The utility of this approach is demonstrated in the fabrication of a sloping electrode structure intended for application in bulk micromachined titanium micromirror devices, however such a method could find use in the fabrication of any number of other microactuator, microsensor, microtransducer, or microstructure devices as well.

摘要翻译： 本发明一般涉及用于金属材料中具有任意表面高度分布的复合高纵横比结构的三维（3D）微细加工方法，以及根据该方法制造的器件。 该方法基于由本发明人先前开发的金属材料的各向异性深蚀刻方法，其通过使得能够简化实现由多个高度级别和倾斜和/或非平面表面轮廓组成的复杂的非棱柱结构几何形状。 在制造用于体积微加工的钛微镜器件中的倾斜电极结构的过程中证明了这种方法的实用性，然而这种方法可用于制造任何数量的其它微型致动器，微传感器，微传感器或微结构器件，如 好。

公开(公告)号：US07022617B2

公开(公告)日：2006-04-04

申请号：US10606812

申请日：2003-06-26

申请人： Kanakasabapathi Subramanian ,  Noel C. MacDonald

发明人： Kanakasabapathi Subramanian ,  Noel C. MacDonald

IPC分类号： H01L21/461

CPC分类号： B81C1/00142 ,  B81B2203/0361 ,  B81C1/00071 ,  B81C1/00111 ,  B81C2201/0112 ,  Y10S977/70 ,  Y10S977/762

摘要： A process cycles between etching and passivating chemistries to create rough sidewalls that are converted into small structures. In one embodiment, a mask is used to define lines in a single crystal silicon wafer. The process creates ripples on sidewalls of the lines corresponding to the cycles. The lines are oxidized in one embodiment to form a silicon wire corresponding to each ripple. The oxide is removed in a further embodiment to form structures ranging from micro sharp tips to photonic arrays of wires. Fluidic channels are formed by oxidizing adjacent rippled sidewalls. The same mask is also used to form other structures for MEMS devices.

摘要翻译： 蚀刻和钝化化学物质之间的过程循环，以产生转变成小结构的粗糙侧壁。 在一个实施例中，使用掩模来限定单晶硅晶片中的线。 该过程在对应于循环的线的侧壁上产生波纹。 在一个实施例中，线被氧化以形成对应于每个纹波的硅线。 在另一个实施方案中去除氧化物以形成从微尖端到光线阵列的结构。 通过氧化相邻的波纹侧壁形成流体通道。 同样的掩模也用于形成MEMS器件的其他结构。

公开(公告)号：US06462391B1

公开(公告)日：2002-10-08

申请号：US09686885

申请日：2000-10-12

申请人： John M. Chong ,  Noel C. MacDonald

发明人： John M. Chong ,  Noel C. MacDonald

IPC分类号： H01L2982

CPC分类号： B81C1/00587 ,  B81B2201/051 ,  Y10S366/03

摘要： A microfabrication process for making enclosed, subsurface microfluidic tunnels, cavities, channels, and the like within suspended beams includes etching a single crystal silicon wafer to produce trenches defining a beam. The trench walls are oxidized, and the interior of the beam is etched through a channel via on the top of the beam to form a hollow beam with oxide sidewalls. The beam is released, and the via is then sealed to form an enclosed released channel beam.

摘要翻译： 用于在悬挂梁内制造封闭的，地下微流体通道，空腔，通道等的微加工方法包括蚀刻单晶硅晶片以产生限定光束的沟槽。 沟槽壁被氧化，并且光束的内部通过在光束顶部上的通道蚀刻而形成具有氧化物侧壁的中空光束。 梁被释放，然后将通孔密封以形成封闭释放的通道梁。

公开(公告)号：US06199874B1

公开(公告)日：2001-03-13

申请号：US08568845

申请日：1995-12-07

申请人： Gregory J. Galvin ,  Timothy J. Davis ,  Noel C. MacDonald

发明人： Gregory J. Galvin ,  Timothy J. Davis ,  Noel C. MacDonald

IPC分类号： B60G1700

CPC分类号： G01P15/131 ,  B81B2201/0235 ,  B81B2203/051 ,  B81C1/00619 ,  B81C2201/0132 ,  G01P1/006 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  G01P2015/0817

摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.

摘要翻译： 从单个硅晶片提供微机电电容式加速度计。 在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。 在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。 加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。 微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。

公开(公告)号：US06149190A

公开(公告)日：2000-11-21

申请号：US030641

申请日：1998-04-03

申请人： Gregory J. Galvin ,  Timothy J. Davis ,  Noel C. MacDonald

发明人： Gregory J. Galvin ,  Timothy J. Davis ,  Noel C. MacDonald

IPC分类号： B81B3/00 ,  B81C1/00 ,  B81C99/00 ,  G01P1/00 ,  G01P15/08 ,  G01P15/125 ,  G01P15/13 ,  B60R21/32 ,  G01P15/25

CPC分类号： G01P15/131 ,  B81C1/00619 ,  G01P1/006 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  B81B2203/051 ,  B81C2201/0132 ,  G01P2015/0814

摘要： A micromechanical capacitive accelerometer is provided from a single silicon wafer. The basic structure of the micromechanical accelerometer is etched in the wafer to form a released portion in the substrate, and the released and remaining portions of the substrate are coated with metal under conditions sufficient to form a micromechanical capacitive accelerometer. The substrate is preferably etched using reactive-ion etching for at least the first etch step in the process that forms the basic structure, although in another preferred embodiment, all etching is reactive-ion etching. The accelerometer also may comprise a signal-conditioned accelerometer wherein signal-conditioning circuitry is provided on the same wafer from which the accelerometer is formed, and VLSI electronics may be integrated on the same wafer from which the accelerometer is formed. The micromechanical capacitive accelerometer can be used for airbag deployment, active suspension control, active steering control, anti-lock braking, and other control systems requiring accelerometers having high sensitivity, extreme accuracy and resistance to out of plane forces.

摘要翻译： 从单个硅晶片提供微机电电容式加速度计。 在晶片中蚀刻微机械加速度计的基本结构，以在衬底中形成释放部分，并且在足以形成微机械电容式加速度计的条件下，用金属涂覆衬底的释放和剩余部分。 在形成基本结构的工艺中，优选使用反应离子蚀刻对至少第一蚀刻步骤蚀刻衬底，尽管在另一优选实施例中，所有蚀刻都是反应离子蚀刻。 加速度计还可以包括信号调节加速度计，其中信号调节电路设置在与其形成加速度计的同一晶片上，并且VLSI电子器件可以集成在形成加速度计的相同晶片上。 微机电容加速度计可用于安全气囊部署，主动悬架控制，主动转向控制，防抱死制动以及需要具有高灵敏度，极高精度和抗平面外力的加速度计的其他控制系统。