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    Methods of fabricating integrated, aligned tunneling tip pairs
    1.
    发明授权
    Methods of fabricating integrated, aligned tunneling tip pairs 失效
    整合，对齐的隧道提花对的方法

    公开(公告)号：US5235187A

    公开(公告)日：1993-08-10

    申请号：US868138

    申请日：1992-04-14

    申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    IPC分类号： G01B7/34 ,  B81B1/00 ,  B81B3/00 ,  G01B7/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/12 ,  G01Q70/14 ,  H01J37/28 ,  H02N1/00

    CPC分类号： H02N1/008 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/16 ,  Y10S977/874

    摘要： Self-aligned, opposed, nanometer dimension tips are fabricated in pairs, one of each pair being located on a movable, single crystal beam, with the beam being movable in three dimensions with respect to a substrate carrying the other tip of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers formed on the supporting beams. Spring means in each beam allow axial motion of the beam. The tips and beams are fabricated from single crystal silicon substrate, and the tips may be electrically isolated from the substrate by fabricating insulating segments in the beam structure.

    摘要翻译： 自对准的，相对的，纳米尺寸的尖端成对制造，每对中的一个位于可移动的单晶束上，其中光束可相对于承载一对的另一个尖端的基板在三维空间中移动。 一个尖端相对于另一个尖端的运动由形成在支撑梁上的换能器控制或感测。 每个梁中的弹簧装置允许梁的轴向运动。 尖端和光束由单晶硅衬底制成，并且尖端可以通过在梁结构中制造绝缘段而与衬底电隔离。

    Transistor microstructure
    2.
    发明授权
    Transistor microstructure 失效
    晶体管微结构

    公开(公告)号：US5397904A

    公开(公告)日：1995-03-14

    申请号：US906873

    申请日：1992-07-02

    申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/73 ,  H01L29/786

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  H01L29/0673 ,  H01L29/42384 ,  H01L29/7317 ,  H01L29/78654 ,  H01L29/78696

    摘要： A method for isolating transistors and a microstructure for providing isolation for transistors includes a beam located on a substrate. The beam is formed from the same material as the substrate, preferably single crystal silicon, and is released so as to be suspended in the cavity and spaced apart from the substrate. The beam is supported in the cavity by a cantilever structure or by spaced pedestals, or both. One or more transistors are fabricated in the beam, and are thus isolated from the substrate and may be isolated from each other if desired. Contact beams may also be provided to contact the transistor electrodes for interconnection of adjacent transistors or connection of the transistors to electrical circuitry on the substrate. The contact beams also provide mechanical support for the beams.Multiple beams in side-by-side arrays or stacked arrays may be provided.

    摘要翻译： 用于隔离晶体管的方法和用于提供晶体管隔离的微结构包括位于衬底上的光束。 光束由与衬底相同的材料形成，优选为单晶硅，并且被释放以便悬挂在空腔中并与衬底间隔开。 梁通过悬臂结构或间隔开的支座或两者支撑在腔体中。 一个或多个晶体管制造在光束中，并且因此与衬底隔离，并且如果需要可以彼此隔离。 还可以提供接触光束以接触晶体管电极，用于相邻晶体管的互连或将晶体管连接到衬底上的电路。 接触梁还为梁提供机械支撑。 可以提供并排阵列或堆叠阵列中的多个光束。

    Methods of fabricating integrated, aligned tunneling tip pairs
    3.
    发明授权
    Methods of fabricating integrated, aligned tunneling tip pairs 失效
    制造集成的对准的隧道尖端对的方法

    公开(公告)号：US5449903A

    公开(公告)日：1995-09-12

    申请号：US76906

    申请日：1993-06-15

    申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    IPC分类号： G01B7/34 ,  B81B1/00 ,  B81B3/00 ,  G01B7/00 ,  G01N37/00 ,  G01Q20/04 ,  G01Q60/16 ,  G01Q70/12 ,  G01Q70/14 ,  H01J37/28 ,  H02N1/00 ,  G21K5/10

    CPC分类号： H02N1/008 ,  B82Y35/00 ,  G01Q20/04 ,  G01Q60/16 ,  Y10S977/874

    摘要： Self-aligned, opposed, nanometer dimension tips are fabricated in pairs, one of each pair being located on a movable, single crystal beam, with the beam being movable in three dimensions with respect to a substrate carrying the other tip of a pair. Motion of one tip with respect to the other is controlled or sensed by transducers formed on the supporting beams. Spring means in each beam allow axial motion of the beam. The tips and beams are fabricated from single crystal silicon substrate, and the tips may be electrically isolated from the substrate by fabricating insulating segments in the beam structure.

    摘要翻译： 自对准的，相对的，纳米尺寸的尖端成对制造，每对中的一个位于可移动的单晶束上，其中光束可相对于承载一对的另一个尖端的基板在三维空间中移动。 一个尖端相对于另一个尖端的运动由形成在支撑梁上的换能器控制或感测。 每个梁中的弹簧装置允许梁的轴向运动。 尖端和光束由单晶硅衬底制成，并且尖端可以通过在梁结构中制造绝缘段而与衬底电隔离。

    Submicron isolated, released resistor structure
    4.
    发明授权
    Submicron isolated, released resistor structure 失效
    亚微米隔离，释放电阻结构

    公开(公告)号：US5287082A

    公开(公告)日：1994-02-15

    申请号：US906877

    申请日：1992-07-02

    申请人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    发明人： Susanne C. Arney ,  Noel C. MacDonald ,  Jun J. Yao

    IPC分类号： H01L21/02 ,  H01C1/012

    CPC分类号： H01L28/20

    摘要： A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.

    摘要翻译： 具有可忽略的寄生电容（40），（42），（44）的亚微米电阻器包括承载在单晶硅晶片上的隔离放电光束（20）。 通过在衬底（24）中限定电阻器区域，掺杂该区域以产生期望的电阻率，以及围绕该区域蚀刻以产生电阻岛，来制造电阻器。 然后通过氧化将岛与基底隔离，并通过去除氧化物来产生隔离的释放的束（20）。

    Micro electromechanical isolator
    7.
    发明授权
    Micro electromechanical isolator 有权
    微机电隔离器

    公开(公告)号：US06417743B1

    公开(公告)日：2002-07-09

    申请号：US09400125

    申请日：1999-09-21

    申请人： Robert E. Mihailovich ,  Jun J. Yao

    发明人： Robert E. Mihailovich ,  Jun J. Yao

    IPC分类号： H03H900

    CPC分类号： H03H9/462

    摘要： The present invention relates to a micro electromechanical (MEM) isolator in which an input signal induces an output signal by means of electrically insulating mechanical motion. The MEM isolator device comprises a dielectric moveable platform suspended above a substrate by flexible beams. A drive and a control capacitor each have one electrode supported by the platform and one electrode supported by the substrate. Coupling between electrical and mechanical energies is achieved by providing an input signal to the drive capacitor to induce platform motion. When the input signal is fed to the drive capacitor, it actuates electrostatic motion of the platform resulting in a change in the value of the control capacitance. The change in the control capacitance is converted via a simple electronics circuit into an output that mirrors the input but is electrically isolated therefrom. The advantages of such a device include simple electrical isolation provided by the dielectric platform, built in signal-debounce inherent to the structure mechanics, and economical integration with silicon integrated circuits.

    摘要翻译： 本发明涉及一种微机电（MEM）隔离器，其中输入信号通过电绝缘的机械运动来感应输出信号。 MEM隔离器装置包括通过柔性梁悬挂在衬底上的介电可移动平台。 驱动器和控制电容器各自具有由平台支撑的一个电极和由基板支撑的一个电极。 通过向驱动电容器提供输入信号以引起平台运动来实现电和机械能之间的耦合。 当输入信号被馈送到驱动电容器时，它致动平台的静电运动，导致控制电容值的变化。 控制电容的变化通过简单的电子电路转换成反映输入的输出，但与之电隔离。 这种器件的优点包括由介电平台提供的简单的电隔离，内置于结构力学固有的信号去抖动，以及与硅集成电路的经济集成。

    Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology
    9.
    发明授权
    Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology 失效
    使用微机电系统（MEMS）技术的单片集成开关电容器组

    公开(公告)号：US5880921A

    公开(公告)日：1999-03-09

    申请号：US848116

    申请日：1997-04-28

    申请人： J.L. Julian Tham ,  James L. Bartlett ,  Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Deepak Mehrotra ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao

    发明人： J.L. Julian Tham ,  James L. Bartlett ,  Mau Chung F. Chang ,  Henry O. Marcy, 5th ,  Deepak Mehrotra ,  Kenneth D. Pedrotti ,  David R. Pehlke ,  Charles W. Seabury ,  Jun J. Yao

    IPC分类号： H01H59/00 ,  H03B1/00 ,  H01G23/00

    CPC分类号： H01H59/0009 ,  H01G5/16 ,  H01H2001/0084 ,  H03B2201/0208 ,  H03B2201/0216 ,  H03B2201/025 ,  H03J2200/10

    摘要： A monolithically integrated switched capacitor bank using MEMS technology that is capable of handling GHz signal frequencies in both the RF and millimeter bands while maintaining precise digital selection of capacitor levels over a wide tuning range. Each MEMS switch includes a cantilever arm that is affixed to the substrate and extends over a ground line and a gapped signal line. An electrical contact is formed on the bottom of the cantilever arm positioned above and facing the gap in the signal line. A top electrode atop the cantilever arm forms a control capacitor structure above the ground line. A capacitor structure, preferably a MEMS capacitor suspended above the substrate at approximately the same height as the cantilever arm, is anchored to the substrate and connected in series with a MEMS switch. The MEMS switch is actuated by applying a voltage to the top electrode, which produces an electrostatic force that attracts the control capacitor structure toward the ground line, thereby causing the electrical contact to close the gap in the signal line and connect the MEMS capacitor structure between a pair of output terminals. The integrated MEMS switch-capacitor pairs have a large range between their on-state and off-state impedance, and thus exhibit superior isolation and insertion loss characteristics.

    摘要翻译： 使用MEMS技术的单片集成开关电容器组，其能够处理RF和毫米波段中的GHz信号频率，同时在宽调谐范围内保持电容器电平的精确数字选择。 每个MEMS开关包括悬臂，其固定在基板上并在接地线和间隙信号线上延伸。 在位于信号线上方并面向信号线的间隙的悬臂的底部上形成电接触。 在悬臂上方的顶部电极在地线上方形成控制电容器结构。 电容器结构，优选地悬置在基板上方的悬臂上方与悬臂大致相同高度的MEMS电容器被锚定到基板并与MEMS开关串联连接。 通过向顶部电极施加电压来致动MEMS开关，该电压产生吸引控制电容器结构朝向接地线的静电力，从而使电接触闭合信号线中的间隙，并将MEMS电容器结构 一对输出端子。 集成的MEMS开关电容器对在其导通状态和截止状态阻抗之间具有较大的范围，因此表现出优异的隔离和插入损耗特性。

    Micro electromechanical RF switch
    10.
    发明授权
    Micro electromechanical RF switch 失效
    微机电RF开关

    公开(公告)号：US5578976A

    公开(公告)日：1996-11-26

    申请号：US493445

    申请日：1995-06-22

    申请人： Jun J. Yao

    发明人： Jun J. Yao

    IPC分类号： H01H1/20 ,  H01H59/00 ,  H01P1/10 ,  H01H57/00

    CPC分类号： H01H59/0009 ,  H01H1/20

    摘要： A micro electromechanical RF switch is fabricated on a substrate using a suspended microbeam as a cantilevered actuator arm. From an anchor structure, the cantilever arm extends over a ground line and a gapped signal line that comprise microstrips on the substrate. A metal contact formed on the bottom of the cantilever arm remote from the anchor is positioned facing the signal line gap. An electrode atop the cantilever arm forms a capacitor structure above the ground line. The capacitor structure may include a grid of holes extending through the top electrode and cantilever arm to reduce structural mass and the squeeze damping effect during switch actuation. The switch is actuated by application of a voltage on the top electrode, which causes electrostatic forces to attract the capacitor structure toward the ground line so that the metal contact closes the gap in the signal line. The switch functions from DC to at least 4 GHz with an electrical isolation of -50 dB and an insertion loss of 0.1 dB at 4 GHz. A low temperature fabrication process allows the switch to be monolithically integrated with microwave and millimeter wave integrated circuits (MMICs). The RF switch has applications in telecommunications, including signal routing for microwave and millimeter wave IC designs, MEMS impedance matching networks, and band-switched tunable filters for frequency-agile communications.

    摘要翻译： 使用悬臂微束作为悬臂式致动器臂，在基板上制造微机电RF开关。 从锚结构中，悬臂在地线和覆盖信号线上延伸，该信号线在衬底上包括微带。 形成在远离锚固件的悬臂的底部上的金属接触件被定位成面对信号线间隙。 悬臂上方的电极在地线上方形成电容器结构。 电容器结构可以包括延伸穿过顶部电极和悬臂的孔格栅，以减少开关致动期间的结构质量和挤压阻尼效应。 通过在顶部电极上施加电压来致动开关，这导致静电力将电容器结构吸引到接地线，使得金属触点闭合信号线中的间隙。 该开关从DC到至少4 GHz，电隔离为-50 dB，在4 GHz时插入损耗为0.1 dB。 低温制造工艺允许开关与微波和毫米波集成电路（MMIC）单片集成。 RF开关具有电信应用，包括用于微波和毫米波IC设计的信号路由，MEMS阻抗匹配网络和用于频率敏捷通信的带通可调谐滤波器。