公开(公告)号：US09967504B1

公开(公告)日：2018-05-08

申请号：US15480833

申请日：2017-04-06

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Gang Chen

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14605 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/374

Abstract: A pixel circuit for use in an image sensor includes an unpinned photodiode disposed in a semiconductor material. The unpinned photodiode adapted to photogenerate charge carriers in response to incident light. A floating diffusion is disposed in the semiconductor and coupled to receive the charge carriers photogenerated in the unpinned photodiode. A transfer transistor is disposed in the semiconductor material and coupled between the unpinned photodiode and the floating diffusion. The transfer transistor is adapted to be switched on to transfer the charge carriers photogenerated in the unpinned photodiode to the floating diffusion. A boost capacitor is disposed over a surface of the semiconductor material proximate to the unpinned photodiode. The boost capacitor is coupled to receive a photodiode boost signal while the transfer transistor is switched on to further drive the charge carriers photogenerated in the unpinned photodiode to the floating diffusion.

公开(公告)号：US09966408B1

公开(公告)日：2018-05-08

申请号：US15791191

申请日：2017-10-23

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dajiang Yang ,  Gang Chen ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L21/00 ,  H01L27/146 ,  H01L21/265 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L27/14643 ,  H01L21/26513 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: A method of image sensor fabrication includes forming a photodiode and a floating diffusion in a first semiconductor material, and removing part of an oxide layer disposed proximate to a seed area on a surface of the first semiconductor material. The method also includes depositing a second semiconductor material over the surface of the first semiconductor material, and annealing the first semiconductor material and second semiconductor material. A portion of the second semiconductor material is etched away to form part of a source follower transistor, and dopant is implanted into the second semiconductor material to form a first doped region, a third doped region, and a second doped region. The second doped region is laterally disposed between the first doped region and the third doped region, and the second doped region is a channel of the source follower transistor.

公开(公告)号：US09955090B2

公开(公告)日：2018-04-24

申请号：US15215139

申请日：2016-07-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Xin Wang ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/355 ,  H04N9/04 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/35563 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.

公开(公告)号：US09881964B1

公开(公告)日：2018-01-30

申请号：US15427748

申请日：2017-02-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Dajiang Yang ,  Gang Chen ,  Vincent Venezia ,  Dyson H. Tai

IPC: H01L31/062 ,  H01L31/113 ,  H01L27/146 ,  H01L29/08 ,  H01L29/10 ,  H01L21/265

CPC classification number: H01L27/14643 ,  H01L21/26513 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14614 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor includes a photodiode disposed in a first semiconductor material and a floating diffusion disposed proximate to the photodiode in the first semiconductor material. A source follower transistor is disposed in part in a second semiconductor material and includes: a first doped region, a third doped region, and a second doped region with an opposite polarity as the first doped region and the third doped region, and a gate electrode coupled to the floating diffusion and disposed in the first semiconductor material and aligned with the second doped region in the second semiconductor material of the source follower transistor.

公开(公告)号：US20180027196A1

公开(公告)日：2018-01-25

申请号：US15215139

申请日：2016-07-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Xin Wang ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/355 ,  H04N9/04 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/35563 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.

公开(公告)号：US09799696B1

公开(公告)日：2017-10-24

申请号：US15293149

申请日：2016-10-13

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dyson H. Tai ,  Duli Mao ,  Cunyu Yang ,  Gang Chen

IPC: H01L31/02 ,  H01L31/0264 ,  H01L31/0376 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/1464

Abstract: An image sensor includes a semiconductor material with a photodiode disposed in the semiconductor material. The image sensor also includes a transfer gate electrically coupled to the photodiode to extract image charge from the photodiode in response to a transfer signal. A floating diffusion is electrically coupled to the transfer gate to receive the image charge from the photodiode. At least one isolation structure is disposed in the photodiode, and the at least one isolation structure extends from a surface of the semiconductor material into the photodiode.

公开(公告)号：US09691810B1

公开(公告)日：2017-06-27

申请号：US14974362

申请日：2015-12-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai ,  Arvind Kumar ,  Hung Chih Chang ,  Chih-Wei Hsiung

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645

Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer disposed between the semiconductor material and the microlens layer. The spacer layer has a concave cross-sectional profile across the array, and the microlens layer is conformal with the concave cross-sectional profile of the spacer layer.

公开(公告)号：US20160358969A1

公开(公告)日：2016-12-08

申请号：US14731707

申请日：2015-06-05

Applicant: OmniVision Technologies, Inc.

Inventor： Zhenhong Fu ,  Dajiang Yang ,  Xianmin Yi ,  Gang Chen ,  Sing-Chung Hu ,  Duli Mao

IPC: H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14649

Abstract: A front-side-interconnect (FSI) red-green-blue-infrared (RGB-IR) photosensor array has photosensors of a first type with a diffused N-type region in a P-type well, the P-type well diffused into a high resistivity semiconductor layer; photosensors of a second type, with a deeper diffused N-type region in a P-type well, the P-type well; and photosensors of a third type with a diffused N-type region diffused into the high resistivity semiconductor layer underlying all of the other types of photosensors. In embodiments, photosensors of a fourth type have a diffused N-type region in a P-type well, the N-type region deeper than the N-type region of photosensors of the first and second types.

Abstract translation: 前置互连（FSI）红 - 绿 - 蓝 - 红 - 红（RGB-IR）光电传感器阵列具有在P型阱中具有扩散的N型区域的第一类型的光电传感器，P型阱扩散到 高电阻率半导体层; P型井中具有较深扩散的N型区域的第二类光电传感器，P型井; 以及具有扩散的N型区域的第三类型的光电传感器扩散到所有其它类型的光电传感器的所有高电阻率半导体层。 在实施例中，第四类型的光电传感器在P型阱中具有扩散的N型区域，N型区域比第一和第二类型的光电传感器的N型区域更深。

公开(公告)号：US09496304B2

公开(公告)日：2016-11-15

申请号：US14704493

申请日：2015-05-05

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Rongsheng Yang ,  Gang Chen ,  Howard E. Rhodes ,  Sohei Manabe ,  Dyson H. Tai

IPC: H01L29/66 ,  H01L27/146 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14601 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/378

Abstract: A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.

Abstract translation: 像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。 浮置扩散部设置在设置在第一区域的外延层中的阱区域中。 耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。 设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散。

公开(公告)号：US20160211295A1

公开(公告)日：2016-07-21

申请号：US14601010

申请日：2015-01-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Gang Chen ,  Duli Mao ,  Yuanwei Zheng ,  Chih-Wei Hsiung ,  Arvind Kumar ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14612 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14647

Abstract: A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image sensor circuitry and a light filter array. The image sensor circuitry is disposed on the front side, and the light filter array is disposed proximate to the back side. The image sensor includes a first pixel with a first doped region that extends from the image sensor circuitry into the semiconductor material a first depth. The first pixel also includes a second doped region that is disposed between the back side of the semiconductor material and the first doped region. The second doped region is electrically isolated from the first doped region. A second pixel with a third doped region is also included in the image sensor. The third doped region extends from the image sensor circuitry into the semiconductor material a second depth.

Abstract translation: 背面照明图像传感器包括具有前侧和后侧的半导体材料。 半导体材料设置在图像传感器电路和滤光器阵列之间。 图像传感器电路设置在前侧，并且滤光器阵列靠近背面设置。 图像传感器包括具有第一掺杂区域的第一像素，其从图像传感器电路延伸到半导体材料第一深度。 第一像素还包括设置在半导体材料的背面和第一掺杂区之间的第二掺杂区域。 第二掺杂区域与第一掺杂区域电隔离。 具有第三掺杂区域的第二像素也包括在图像传感器中。 第三掺杂区域从图像传感器电路延伸到半导体材料第二深度。