公开(公告)号：US08552423B2

公开(公告)日：2013-10-08

申请号：US12835903

申请日：2010-07-14

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Hiroyuki Miyake ,  Hideaki Kuwabara ,  Tatsuya Takahashi

IPC分类号： H01L29/10

CPC分类号： H01L27/1225 ,  G02F1/1368 ,  H01L21/02554 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/45 ,  H01L29/78645

摘要： An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

摘要翻译： 半导体器件的开口率提高。 驱动电路和像素设置在一个基板上，驱动电路中的第一薄膜晶体管和像素中的第二薄膜晶体管均包括栅极电极层，栅电极层上的栅极绝缘层，氧化物 栅极绝缘层上的半导体层，氧化物半导体层上的源极和漏极层以及与栅极绝缘层，氧化物半导体层以及源极和漏极上的部分氧化物半导体层接触的氧化物绝缘层 层。 栅极电极层，栅极绝缘层，氧化物半导体层，源极和漏极电极层以及第二薄膜晶体管的氧化物绝缘层各自具有透光性。

公开(公告)号：US08421135B2

公开(公告)日：2013-04-16

申请号：US12323724

申请日：2008-11-26

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hideaki Kuwabara ,  Saishi Fujikawa

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hideaki Kuwabara ,  Saishi Fujikawa

IPC分类号： H01L31/062

CPC分类号： H01L27/1222 ,  G02F1/13454 ,  G02F1/13458 ,  H01L27/124 ,  H01L27/156 ,  H01L29/6675 ,  H01L29/66765

摘要： In a display device such as a liquid crystal display device, a large-sized display screen is realized under low power consumption. A surface of a source wiring line of a pixel portion employed in an active matrix type liquid crystal display device is processed by way of a plating process operation so as to lower a resistance value of this source wiring line. The source wiring line of the pixel portion is manufactured at a step different from a step for manufacturing a source wiring line of a drive circuit portion. Further, electrodes of a terminal portion are processed by a plating process operation so as to reduce a resistance value thereof.

公开(公告)号：US08350469B2

公开(公告)日：2013-01-08

申请号：US13280632

申请日：2011-10-25

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara

IPC分类号： H01L51/00

CPC分类号： H01L51/529 ,  H01L51/0042 ,  H01L51/005 ,  H01L51/0062 ,  H01L51/007

摘要： When a light emitting element is actuated to allow the light emission, the generation of Joule heat occurs, leading to the decomposition or crystallization of an organic compound to cause the degradation of the light emitting device. Therefore, a light emitting element of the present invention is provided for effecting removing or decreasing the generation of heat. In the present invention, between two electrodes, layers having organic compounds and carbon-based thin films are alternatively laminated one after another for stepping down the driving voltage in the light emitting element using the tunnel effect. In addition, a carbon-based thin film is placed on a film containing an organic compound, so that it prevents the electric field from being locally concentrated and also prevents the generation of short-circuit between the anode and the cathode.

摘要翻译： 当致动发光元件以允许发光时，发生焦耳热的产生，导致有机化合物的分解或结晶，导致发光器件的劣化。 因此，提供本发明的发光元件用于实现除去或减少热的产生。 在本发明中，在两个电极之间，交替层叠具有有机化合物的层和碳基薄膜，以使用隧道效应降低发光元件中的驱动电压。 此外，将碳基薄膜放置在含有有机化合物的膜上，防止电场局部浓缩，并防止阳极与阴极之间产生短路。

公开(公告)号：US08344363B2

公开(公告)日：2013-01-01

申请号：US12750325

申请日：2010-03-30

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Hideaki Kuwabara

IPC分类号： H01L35/24

CPC分类号： H01L51/5209 ,  G01J1/4228 ,  H01L25/167 ,  H01L27/3206 ,  H01L27/3211 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L33/0041 ,  H01L51/0096 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5221 ,  H01L51/5234 ,  H01L51/524 ,  H01L51/5271 ,  H01L51/529 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5315

摘要： A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

公开(公告)号：US20120214263A1

公开(公告)日：2012-08-23

申请号：US13459122

申请日：2012-04-28

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Masakazu Murakami

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Masakazu Murakami

IPC分类号： H01L33/00

CPC分类号： H01L51/56 ,  C23C14/046 ,  C23C14/12 ,  C23C14/246 ,  C23C14/564 ,  H01L27/3244 ,  H01L33/44

摘要： The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film formation chamber, an evaporation source holder in a rectangular shape in which a plurality of containers sealing evaporation material is moved at a certain pitch to a substrate and the evaporation material is vapor deposited on the substrate. Further, a longitudinal direction of an evaporation source holder in a rectangular shape may be oblique to one side of a substrate, while the evaporation source holder is being moved. Furthermore, it is preferable that a movement direction of an evaporation source holder during vapor deposition be different from a scanning direction of a laser beam while a TFT is formed.

摘要翻译： 本发明提供一种可以更有效地使用EL材料的成膜系统的气相沉积方法和气相沉积系统，并且形成具有高生产率的均匀性优异的EL材料。 根据本发明，在成膜室内部，将密封蒸发材料的多个容器以一定间距移动到基板上的矩形状的蒸发源保持器和蒸发材料蒸镀在基板上。 此外，蒸发源保持器的纵向方向可以在基板的一侧倾斜，同时蒸发源保持器被移动。 此外，优选的是，蒸镀源夹持器在气相沉积期间的移动方向与形成TFT的激光束的扫描方向不同。

公开(公告)号：US08207533B2

公开(公告)日：2012-06-26

申请号：US12327876

申请日：2008-12-04

申请人： Shinji Maekawa ,  Hideaki Kuwabara

发明人： Shinji Maekawa ,  Hideaki Kuwabara

IPC分类号： H01L29/04

CPC分类号： H01L29/78678 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/7869

摘要： The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

摘要翻译： 本发明提供一种使用适合于批量生产大型基板的液滴喷射方法的制造方法。 导电膜的感光材料溶液通过液滴喷射法选择性地放电，选择性地暴露于激光并显影或蚀刻，从而仅允许暴露于激光的区域实现源极布线和漏极布线 具有比通过放电形成的图案本身更微细的图案。 源极布线和漏极布线的一个特征是源极布线和漏极布线与岛状半导体层交叉并重叠。

公开(公告)号：US08198630B2

公开(公告)日：2012-06-12

申请号：US12789382

申请日：2010-05-27

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara ,  Yasuyuki Arai

IPC分类号： H01L29/04

CPC分类号： H01L27/1222 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/13452 ,  G02F1/13458 ,  G02F1/136204 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  G02F2201/123 ,  G02F2202/103 ,  G02F2202/105 ,  G02F2202/28 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67225 ,  H01L21/67236 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode, the source region and the drain region by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized, FIG. 2.

摘要翻译： 在传统的液晶显示装置中使用至少五个光掩模制造TFT，因此制造成本高。 通过在三个光刻步骤中通过使用三个光掩模来执行像素电极，源极区域和漏极区域的形成，制备具有反向交错型n沟道TFT的像素TFT部分的液晶显示装置和存储 可以实现电容器， 2。

公开(公告)号：US08049421B2

公开(公告)日：2011-11-01

申请号：US12689433

申请日：2010-01-19

申请人： Shunpei Yamazaki ,  Hideaki Kuwabara

发明人： Shunpei Yamazaki ,  Hideaki Kuwabara

IPC分类号： H01L51/00 ,  H05B33/22

CPC分类号： H01L51/529 ,  H01L51/0042 ,  H01L51/005 ,  H01L51/0062 ,  H01L51/007

摘要： When a light emitting element is actuated to allow the light emission, the generation of Joule heat occurs, leading to the decomposition or crystallization of an organic compound to cause the degradation of the light emitting device. Therefore, a light emitting element of the present invention is provided for effecting removing or decreasing the generation of heat. In the present invention, between two electrodes, layers having organic compounds and carbon-based thin films are alternatively laminated one after another for stepping down the driving voltage in the light emitting element using the tunnel effect. In addition, a carbon-based thin film is placed on a film containing an organic compound, so that it prevents the electric field from being locally concentrated and also prevents the generation of short-circuit between the anode and the cathode.

摘要翻译： 当致动发光元件以允许发光时，发生焦耳热的产生，导致有机化合物的分解或结晶，导致发光器件的劣化。 因此，提供本发明的发光元件用于实现除去或减少热的产生。 在本发明中，在两个电极之间，交替层叠具有有机化合物的层和碳基薄膜，以使用隧道效应降低发光元件中的驱动电压。 此外，将碳基薄膜放置在含有有机化合物的膜上，防止电场局部浓缩，并防止阳极与阴极之间产生短路。

公开(公告)号：US20110207255A1

公开(公告)日：2011-08-25

申请号：US13099804

申请日：2011-05-03

申请人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

发明人： Masayuki Sakakura ,  Takeshi Noda ,  Hideaki Kuwabara ,  Shunpei Yamazaki

IPC分类号： H01L33/02

CPC分类号： H01L27/3244 ,  H01L27/322 ,  H01L27/3248 ,  H01L51/0011 ,  H01L51/5052 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5218 ,  H01L51/56 ,  H01L2251/5315

摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。

公开(公告)号：US07939822B2

公开(公告)日：2011-05-10

申请号：US12346250

申请日：2008-12-30

申请人： Shinji Maekawa ,  Hideaki Kuwabara

发明人： Shinji Maekawa ,  Hideaki Kuwabara

IPC分类号： H01L29/10 ,  H01L21/339 ,  H01L21/00 ,  H01L21/44

CPC分类号： H01L29/78678 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/7869

摘要： The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

摘要翻译： 本发明提供一种使用适合于批量生产大型基板的液滴喷射方法的制造方法。 导电膜的感光材料溶液通过液滴喷射法选择性地放电，选择性地暴露于激光并显影或蚀刻，从而仅允许暴露于激光的区域实现源极布线和漏极布线 具有比通过放电形成的图案本身更微细的图案。 源极布线和漏极布线的一个特征是源极布线和漏极布线与岛状半导体层交叉并重叠。