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    DISPLAY SYSTEM AND ELECTRICAL APPLIANCE
    61.
    发明申请
    DISPLAY SYSTEM AND ELECTRICAL APPLIANCE 审中-公开

    公开(公告)号：US20160365029A1

    公开(公告)日：2016-12-15

    申请号：US15175270

    申请日：2016-06-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Jun Koyama ,  Noriko Ishimaru

    IPC: G09G3/3233 ,  G09G5/10

    Abstract: A display system in which the luminance of light-emitting elements in a light-emitting device is adjusted based on information on an environment. A sensor obtains information on an environment as an electrical signal. A CPU converts, based on comparison data set in advance, the information signal into a correction signal for correcting the luminance of EL elements. Upon receiving this correction signal, a voltage changer applies a predetermined corrected potential to the EL elements. Thus, this display system enables control of the luminance of the EL elements.

    Semiconductor display device
    63.
    发明授权
    Semiconductor display device 有权
    半导体显示装置

    公开(公告)号：US09478704B2

    公开(公告)日：2016-10-25

    申请号：US13686366

    申请日：2012-11-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Tatsuji Nishijima ,  Seiichi Yoneda ,  Takuro Ohmaru ,  Jun Koyama

    IPC: H01L29/10 ,  H01L33/16 ,  G09G3/36 ,  H01L27/12 ,  G02F1/1362

    CPC classification number: G09G3/3648 ,  G02F2001/136295 ,  G09G3/3614 ,  G09G3/3677 ,  G09G5/393 ,  G09G5/395 ,  G09G2300/0842 ,  G09G2310/0264 ,  G09G2330/021 ,  G09G2330/022 ,  G09G2360/121 ,  H01L27/1052 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869 ,  H01L33/16

    Abstract: In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped.

    Abstract translation: 在静止图像显示在具有像素的像素部分的情况下，例如通过停止对驱动电路的电源电压的供给来停止将具有图像数据的图像信号写入到像素部分的驱动电路， 并且停止向像素部分写入图像信号。 在驱动器电路停止之后，停止向用于控制驱动器电路的操作的面板控制器的电源电压供给和用于存储图像数据的图像存储器，并且向CPU提供电源电压以集中地控制 停止面板控制器，图像存储器和用于控制对半导体显示装置中的各种电路的电源电压供给的电源控制器。

    Liquid crystal display device and method for driving liquid crystal display device
    65.
    发明授权
    Liquid crystal display device and method for driving liquid crystal display device 有权
    液晶显示装置及液晶显示装置的驱动方法

    公开(公告)号：US09449569B2

    公开(公告)日：2016-09-20

    申请号：US13940788

    申请日：2013-07-12

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Yoshiharu Hirakata ,  Hiroyuki Miyake

    IPC: G09G3/36 ,  G02F1/137

    CPC classification number: G09G3/3614 ,  G02F2001/13793 ,  G09G3/3648 ,  G09G2310/0205 ,  G09G2310/0218 ,  G09G2310/0235

    Abstract: A liquid crystal display device capable of consuming less power and a method for driving the liquid crystal display device are provided. The liquid crystal display device includes a pixel portion, a light supply portion sequentially supplying lights of a plurality of hues to the pixel portion, a counter counting the number of frame periods, a signal generator determining timing of inverting the polarity of an image signal every plural consecutive frame periods by using data on the number of frame periods counted by the counter, and a controller inverting the polarity of the image signal in accordance with the timing. A plurality of pixels are provided in the pixel portion. The image signal whose polarity is inverted every plural frame periods is input to the plurality of pixels.

    Abstract translation: 提供能够消耗较少功率的液晶显示装置和驱动液晶显示装置的方法。 液晶显示装置包括：像素部，向像素部顺序地供给多种色调的光的供光部，对帧周期数进行计数的计数器，确定每次图像信号的极性反转的定时 通过使用由计数器计数的帧周期数的数据和控制器根据定时反转图像信号的极性的多个连续帧周期。 像素部中设置有多个像素。 将极性在每个帧周期反转的图像信号输入到多个像素。

    Temperature sensor circuit and semiconductor device including temperature sensor circuit
    66.
    发明授权
    Temperature sensor circuit and semiconductor device including temperature sensor circuit 有权
    温度传感器电路和半导体器件包括温度传感器电路

    公开(公告)号：US09435696B2

    公开(公告)日：2016-09-06

    申请号：US13873550

    申请日：2013-04-30

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun Koyama ,  Shunpei Yamazaki

    IPC: G01K7/01

    CPC classification number: G01K7/01

    Abstract: To provide a highly accurate temperature sensor circuit. The temperature sensor circuit includes a first constant current circuit; a first diode in which a first voltage reflecting the temperature of an object to be detected is generated between an anode and a cathode in accordance with a first current supplied from the first constant current circuit; a second constant current circuit; a second diode which includes an oxide semiconductor and in which a second voltage is generated between an anode and a cathode in accordance with a second current supplied from the second constant current circuit; and an amplifier circuit which amplifies a difference between the first voltage and the second voltage.

    Abstract translation: 提供高精度的温度传感器电路。 温度传感器电路包括第一恒流电路; 第一二极管，其中根据从第一恒流电路提供的第一电流，在阳极和阴极之间产生反映待检测物体的温度的第一电压; 第二恒流电路; 第二二极管，其包括氧化物半导体，并且其中根据从第二恒流电路提供的第二电流在阳极和阴极之间产生第二电压; 以及放大器电路，其放大第一电压和第二电压之间的差。

    Semiconductor device
    67.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09424950B2

    公开(公告)日：2016-08-23

    申请号：US14315601

    申请日：2014-06-26

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Kouhei Toyotaka ,  Jun Koyama ,  Hiroyuki Miyake

    IPC: G11C19/00 ,  G11C19/28 ,  G09G3/32 ,  G09G3/36

    CPC classification number: H01L27/124 ,  G02F1/1334 ,  G02F1/1337 ,  G02F1/134336 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3648 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2300/0426 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2320/0626 ,  G09G2330/021 ,  G11C19/28 ,  G11C19/287 ,  H01L27/1225 ,  H01L29/7869

    Abstract: A semiconductor device includes first and second transistors having the same conductivity type and a circuit. One of a source and a drain of the first transistor is electrically connected to that of the second transistor. First and third potentials are supplied to the circuit through respective wirings. A second potential and a first clock signal are supplied to the others of the sources and the drains of the first and second transistors, respectively. A second clock signal is supplied to the circuit. The third potential is higher than the second potential which is higher than the first potential. A fourth potential is equal to or higher than the third potential. The first clock signal alternates the second and fourth potentials and the second clock signal alternates the first and third potentials. The circuit controls electrical connections between gates of the first and second transistors and the wirings.

    Abstract translation: 半导体器件包括具有相同导电类型的第一和第二晶体管和电路。 第一晶体管的源极和漏极之一与第二晶体管的源极和漏极电连接。 第一和第三电位通过各自的布线提供给电路。 第二电位和第一时钟信号分别被提供给第一和第二晶体管的源极和漏极中的其它电极。 第二个时钟信号被提供给电路。 第三电位高于高于第一电位的第二电位。 第四个电位等于或高于第三个电位。 第一时钟信号交替第二和第四电位，第二时钟信号交替第一和第三电位。 该电路控制第一和第二晶体管的栅极与布线之间的电连接。

    Semiconductor device and method for manufacturing the same
    68.
    发明授权
    Semiconductor device and method for manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09412060B2

    公开(公告)日：2016-08-09

    申请号：US14500343

    申请日：2014-09-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Kiyoshi Kato ,  Takaaki Koen ,  Yuto Yakubo ,  Makoto Yanagisawa ,  Hisashi Ohtani ,  Eiji Sugiyama ,  Nozomi Horikoshi

    IPC: H01L39/00 ,  G06K19/077 ,  H01L23/29 ,  H01L23/31

    CPC classification number: G06K19/07735 ,  G06K19/07722 ,  G06K19/07794 ,  H01L23/295 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.

    Abstract translation: 一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。 半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。 在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。 其中一个结构体设置在片上天线和增强天线之间。 在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω/ cm2的导电膜。

    Back gate bias voltage control of oxide semiconductor transistor
    70.
    发明授权
    Back gate bias voltage control of oxide semiconductor transistor 有权
    氧化物半导体晶体管的背栅偏压控制

    公开(公告)号：US09378777B2

    公开(公告)日：2016-06-28

    申请号：US14641733

    申请日：2015-03-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Jun Koyama

    IPC: G11C5/14 ,  H01L29/786 ,  G11C11/24 ,  G11C19/28 ,  G11C16/34 ,  G11C7/12

    CPC classification number: G11C5/147 ,  G11C5/146 ,  G11C7/12 ,  G11C11/24 ,  G11C16/3418 ,  G11C19/28 ,  H01L27/1225 ,  H01L29/7869

    Abstract: To stably control a threshold voltage of a functional circuit using an oxide semiconductor. A variable bias circuit, a monitoring oxide semiconductor transistor including a back gate, a current source, a differential amplifier, a reference voltage source, and a functional circuit which includes an oxide semiconductor transistor including a back gate are provided. The current source supplies current between a source and a drain of the monitoring oxide semiconductor transistor to generate a gate-source voltage in accordance with the current. The differential amplifier compares the voltage with a voltage of the reference voltage source, amplifies a difference, and outputs a resulting voltage to the variable bias circuit. The variable bias circuit is controlled by an output of the differential amplifier and supplies voltage to the back gate of the monitoring oxide semiconductor transistor and the back gate of the oxide semiconductor transistor included in the functional circuit.

    Abstract translation: 为了稳定地控制使用氧化物半导体的功能电路的阈值电压。 提供一种可变偏置电路，包括背栅极，电流源，差分放大器，参考电压源和包括包括背栅的氧化物半导体晶体管的功能电路的监测氧化物半导体晶体管。 电流源在监测氧化物半导体晶体管的源极和漏极之间提供电流，以根据电流产生栅极 - 源极电压。 差分放大器将电压与参考电压源的电压进行比较，放大差值，并将得到的电压输出到可变偏置电路。 可变偏置电路由差分放大器的输出控制，并将电压提供给监视氧化物半导体晶体管的背栅和功能电路中包含的氧化物半导体晶体管的背栅。

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