公开(公告)号：US4071633A

公开(公告)日：1978-01-31

申请号：US772131

申请日：1977-02-25

申请人： Katsumichi Aoki ,  Susumu Shimizu ,  Keigo Satake ,  Shiro Yamazaki ,  Nobuo Hatakeyama

发明人： Katsumichi Aoki ,  Susumu Shimizu ,  Keigo Satake ,  Shiro Yamazaki ,  Nobuo Hatakeyama

IPC分类号： A01N37/28 ,  C07C67/00 ,  C07C241/00 ,  C07C243/38 ,  A01N9/20 ,  C07C103/82

CPC分类号： C07C243/38

摘要： Novel N-trichloroacetyl-N'-chlorobenzoylhydrazine derivatives, having the following formula: ##STR1## WHERE N STANDS FOR 1 OR 2, AND ESPECIALLY ADAPTED FOR USE AS FUNGICIDAL AGENT FOR AGRICULTURAL USE, AND PROCESS FOR MANUFACTURING SAME.

摘要翻译： 新型的N-三氯乙酰基-N'-氯苯甲酰肼衍生物，具有下列结构式：其中N为1或2的化合物，特别适用于农业用途的杀真菌剂及其制备方法。

公开(公告)号：US4007279A

公开(公告)日：1977-02-08

申请号：US544895

申请日：1975-01-28

申请人： Takaaki Ohtsuka ,  Keigo Satake ,  Shiro Yamazaki ,  Takeo Watanabe

发明人： Takaaki Ohtsuka ,  Keigo Satake ,  Shiro Yamazaki ,  Takeo Watanabe

IPC分类号： C07D339/08

CPC分类号： C07D339/08

摘要： A fungicidal compound having a general structure corresponding to a member selected from the group of 2,3-dicyano-5,6-dihydro-p-dithiin and its 5-alkyl derivatives, as expressed by the following general formula: ##STR1## wherein R stands for H or an alkyl radical of C.sub.1 - C.sub.6.

摘要翻译： 具有对应于选自2,3-二氰基-5,6-二氢 - 对 - 二硫杂及其5-烷基衍生物的成员的一般结构的杀真菌化合物，由以下通式表示：其中 R代表H或C1-C6的烷基。

公开(公告)号：US20120217510A1

公开(公告)日：2012-08-30

申请号：US13468486

申请日：2012-05-10

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L33/32 ,  H01L33/40

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+-layer, and forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1.

摘要翻译： 制备III族氮化物化合物的发光半导体器件的方法包括形成满足式（Al x Ga Ga 1-x 3）y 3 In 1-y 3 N的高载流子浓度N +层，其中0＆nlE; x3＆nlE; 1,0

公开(公告)号：US07112243B2

公开(公告)日：2006-09-26

申请号：US10200586

申请日：2002-07-23

申请人： Masayoshi Koike ,  Shiro Yamazaki

发明人： Masayoshi Koike ,  Shiro Yamazaki

IPC分类号： C30B29/38 ,  H01L21/36

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262

摘要： The present invention provides a method for producing a Group III nitride compound semiconductor, which method permits only minimal reaction of the semiconductor with a hetero-substrate during epitaxial growth and induces no cracks in the Group III nitride compound semiconductor even when the semiconductor is cooled to room temperature. The method includes a buffer layer formation step for forming a gas-etchable buffer layer on the hetero-substrate, and a semiconductor formation step for epitaxially growing the Group III nitride compound semiconductor on the buffer layer through a vapor phase growth method, wherein at least a portion of the buffer layer is gas-etched during or after the semiconductor formation step.

摘要翻译： 本发明提供了一种制造III族氮化物化合物半导体的方法，该方法在外延生长期间仅允许半导体与异质衬底的反应最小，并且即使当半导体被冷却到第三族氮化物半导体时也不引起裂纹 室内温度。 该方法包括用于在异质衬底上形成气体可蚀刻缓冲层的缓冲层形成步骤，以及用于通过气相生长法在缓冲层上外延生长III族氮化物半导体的半导体形成步骤，其中至少 在半导体形成步骤期间或之后，缓冲层的一部分被气蚀刻。

公开(公告)号：US07001790B2

公开(公告)日：2006-02-21

申请号：US09783035

申请日：2001-02-15

申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

IPC分类号： H01L21/00

CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1-x3)y3In1-y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1-x2)y2In1-y2N emission layer (5), and a Mg-doped (Alx1Ga1-x1)y1In1-y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载体的硅（Si）掺杂GaN n + +层（3） （n型）浓度，Si掺杂（Al x3 Ga 1-x 3）y 3在1-y 3中， 具有高载流子（n型）浓度的氮（Zn）和Si掺杂（Al 2 x 2 Ga 2） 1-x2 Y2在1-y2 N发射层（5）中，以及Mg掺杂（Al x1 Ga） 在1-y1 N p层（6）中。 AlN层（2）的厚度为500埃。 GaN n + +（3）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 n + +层（4）具有约2.0μm厚度和2×10 18 / cm 3电子浓度。 发射层（5）的厚度约为0.5μm。 p层6具有约1.0μm厚度和2×10 17 / cm 3孔浓度。 镍电极（7,8）分别连接到p层（6）和n + +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。

公开(公告)号：US06472690B1

公开(公告)日：2002-10-29

申请号：US09677789

申请日：2000-10-02

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlxGa1−xN) in which the n-layer of n-type gallium nitride compound semiconductor (AlxGa1−xN) is of double-layer structure including an n-layer of low carrier concentration and an n+-layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (AlxGa1−xN); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an iL-layer of low impurity concentration containing p-type impurities in comparatively low concentration and an iH-layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (AlxGa1−xN) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US5897509A

公开(公告)日：1999-04-27

申请号：US880677

申请日：1997-06-23

申请人： Masataka Toda ,  Hiroyuki Suganuma ,  Shiro Yamazaki ,  Koji Kuno

发明人： Masataka Toda ,  Hiroyuki Suganuma ,  Shiro Yamazaki ,  Koji Kuno

IPC分类号： A61C19/04 ,  A61B5/103

CPC分类号： A61C19/043

摘要： A probe for measuring a depth of a periodontal pocket includes an emitting device for emitting, from a position at a distance from the periodontal pocket, a light beam toward the periodontal pocket, a receiving device for receiving, at a position at another distance from the periodontal pocket, the light beam after being reflected on a bottom of the periodontal pocket, and an analyzing device for displaying the depth of the periodontal pocket after a calculation thereof on the basis of an analysis of the light beam received at the receiving device.

摘要翻译： 用于测量牙周袋深度的探针包括一个发射装置，用于从与牙周袋一定距离处的一个位置发射朝向牙周袋的光束;一个接收装置，用于在与 在牙周袋的底部反射后的光束，以及分析装置，用于根据在接收装置接收的光束的分析，计算出牙周袋的深度。

公开(公告)号：US5278433A

公开(公告)日：1994-01-11

申请号：US926022

申请日：1992-08-07

申请人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

发明人： Katsuhide Manabe ,  Akira Mabuchi ,  Hisaki Kato ,  Michinari Sassa ,  Norikatsu Koide ,  Shiro Yamazaki ,  Masafumi Hashimoto ,  Isamu Akasaki

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/025

摘要： Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) is of double-layer structure including an n-layer of low carrier concentration and an n.sup.+ -layer of high carrier concentration, the former being adjacent to the i-layer of insulating gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N); (2) a light-emitting semiconductor device of similar structure as above in which the i-layer is of double-layer structure including an i.sub.L -layer of low impurity concentration containing p-type impurities in comparatively low concentration and an i.sub.H -layer of high impurity concentration containing p-type impurities in comparatively high concentration, the former being adjacent to the n-layer; (3) a light-emitting semiconductor device having both of the above-mentioned features and (4) a method of producing a layer of an n-type gallium nitride compound semiconductor (Al.sub.x Ga.sub.1-x N) having a controlled conductivity from an organometallic compound by vapor phase epitaxy, by feeding a silicon-containing gas and other raw material gases together at a controlled mixing ratio.

摘要翻译： 这里公开的是（1）使用其中n型氮化镓化合物半导体（Al x Ga 1-x N）的n层是双层结构的氮化镓化合物半导体（Al x Ga 1-x N）的发光半导体器件，包括 低载流子浓度的n层和高载流子浓度的n +层，前者与绝缘的氮化镓化合物半导体（Al x Ga 1-x N）的i层相邻; （2）具有上述类似结构的发光半导体器件，其中i层是双层结构，其包括含有较低浓度的p型杂质的低杂质浓度的iL层和iH层 含有较高浓度的p型杂质的高杂质浓度，前者与n层相邻; （3）具有上述特征的发光半导体器件和（4）由有机金属化合物具有受控导电性的n型氮化镓系化合物半导体（Al x Ga 1-x N）的层的制造方法， 通过以受控的混合比将含硅气体和其它原料气体一起供给到气相外延。

公开(公告)号：US5151114A

公开(公告)日：1992-09-29

申请号：US667132

申请日：1991-03-11

申请人： Hideo Arahori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

发明人： Hideo Arahori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

IPC分类号： A01N47/36 ,  C07C311/39 ,  C07D521/00

CPC分类号： C07D521/00 ,  A01N47/36 ,  C07C311/39

摘要： Disclosed herein are N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R.sup.1 is CF.sub.3, COOH or CCl.dbd.CClCOOH, R.sup.2 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives as active ingredients.

摘要翻译： 本文公开了式（I）的N-取代-3-（取代肼基）苯磺酰胺衍生物：其中R 1是CF 3，COOH或CCl = CClCOOH，R 2是H，Cl，C 1 -C 3烷基或 C1-C4烷氧基羰基; Z是CH或N; X1是C1-C3烷基，C1-C3烷氧基或C1; X2是C1-C3烷基或C1-C3烷氧基，其制备方法和含有N-取代-3-取代的肼基苯磺酰胺衍生物作为活性成分的除草组合物。

公开(公告)号：US5130475A

公开(公告)日：1992-07-14

申请号：US798007

申请日：1991-11-26

申请人： Takafumi Shida ,  Hideo Arabori ,  Takeo Watanabe ,  Shiro Yamazaki ,  Hiroyasu Shinkawa

发明人： Takafumi Shida ,  Hideo Arabori ,  Takeo Watanabe ,  Shiro Yamazaki ,  Hiroyasu Shinkawa

IPC分类号： A01N43/653 ,  C07C65/21 ,  C07C67/14 ,  C07C69/734 ,  C07C235/42 ,  C07D249/10 ,  C07D263/42 ,  C07D263/48

CPC分类号： C07C65/21 ,  A01N43/653 ,  C07D249/10 ,  C07D263/48

摘要： Disclosed herein is a derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide represented by the following formula (I): ##STR1## wherein R represents an alkyl group of 2 to 10 carbon atoms, which is substituted by fluorine atom(s), and X represents a hydrogen atom or a fluorine atom, a process for producing the derivative and a herbicidal compositions containing the derivative of 1,5-diphenyl-1H-1,2,4-triazole-3-carboxamide as an active ingredient.