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92 条记录 (耗时 0.02 秒)

    N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives, and herbicidal compositions
    1.
    发明授权
    N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives, and herbicidal compositions 失效
    N-取代-3-（取代肼基）苯磺酰胺衍生物和除草组合物

    公开(公告)号：US5151114A

    公开(公告)日：1992-09-29

    申请号：US667132

    申请日：1991-03-11

    申请人： Hideo Arahori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

    发明人： Hideo Arahori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

    IPC分类号： A01N47/36 ,  C07C311/39 ,  C07D521/00

    CPC分类号： C07D521/00 ,  A01N47/36 ,  C07C311/39

    摘要： Disclosed herein are N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R.sup.1 is CF.sub.3, COOH or CCl.dbd.CClCOOH, R.sup.2 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives as active ingredients.

    摘要翻译： 本文公开了式（I）的N-取代-3-（取代肼基）苯磺酰胺衍生物：其中R 1是CF 3，COOH或CCl = CClCOOH，R 2是H，Cl，C 1 -C 3烷基或 C1-C4烷氧基羰基; Z是CH或N; X1是C1-C3烷基，C1-C3烷氧基或C1; X2是C1-C3烷基或C1-C3烷氧基，其制备方法和含有N-取代-3-取代的肼基苯磺酰胺衍生物作为活性成分的除草组合物。

    N-substituted-3-(substituted hydrazino)-benzenesulfonamides
    3.
    发明授权
    N-substituted-3-(substituted hydrazino)-benzenesulfonamides 失效
    N-取代-3-（取代的肼基） - 苯磺酰胺

    公开(公告)号：US5198566A

    公开(公告)日：1993-03-30

    申请号：US892890

    申请日：1992-06-03

    申请人： Hideo Arabori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

    发明人： Hideo Arabori ,  Shiro Yamazaki ,  Masato Arahira ,  Aiko Murakami

    IPC分类号： A01N47/36 ,  C07C311/39 ,  C07D521/00

    CPC分类号： C07D521/00 ,  A01N47/36 ,  C07C311/39

    摘要： Disclosed herein are N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives of the formula (I): ##STR1## wherein R.sup.1 and CF.sub.3, COOH or CCl=CClCOOH, R.sup.2 is H, Cl, C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.4 alkoxycarbonyl; Z is CH or N; X.sup.1 is C.sub.1 -C.sub.3 alkyl, C.sub.1 -C.sub.3 alkoxyl or Cl; and X.sup.2 is C.sub.1 -C.sub.3 alkyl or C.sub.1 -C.sub.3 alkoxyl, a process for the preparation thereof, and herbicidal compositions containing the N-substituted-3-(substituted hydrazino)benzenesulfonamide derivatives as active ingredients.

    摘要翻译： 本文公开了式（I）的N-取代-3-（取代的肼基）苯磺酰胺衍生物：其中R 1和CF 3，COOH或CCl = CClCOOH，R 2是H，Cl，C 1 -C 3烷基或 C1-C4烷氧基羰基; Z是CH或N; X1是C1-C3烷基，C1-C3烷氧基或C1; X2是C1-C3烷基或C1-C3烷氧基，其制备方法和含有N-取代-3-取代的肼基苯磺酰胺衍生物作为活性成分的除草组合物。

    Method for producing group III nitride-based compound semiconductor crystal
    9.
    发明授权
    Method for producing group III nitride-based compound semiconductor crystal 有权
    制备III族氮化物基化合物半导体晶体的方法

    公开(公告)号：US08227324B2

    公开(公告)日：2012-07-24

    申请号：US12448207

    申请日：2007-12-10

    申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： H01L21/20

    CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625

    摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.

    摘要翻译： 在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。 因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。 当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解 在助焊剂混合物中。

    Method for producing a semiconductor crystal
    10.
    发明授权
    Method for producing a semiconductor crystal 有权
    半导体晶体的制造方法

    公开(公告)号：US08216365B2

    公开(公告)日：2012-07-10

    申请号：US12073178

    申请日：2008-02-29

    申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

    IPC分类号： C30B25/18

    CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B9/10

    摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.

    摘要翻译： 本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。 包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐 在x轴方向。 因此，在m平面上存在支撑工具与晶种接触的三个接触点。 支撑工具具有在垂直方向上延伸的两个支撑构件。 一个支撑构件具有相对于水平面α倾斜30°的端部。 在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。 实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。