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公开(公告)号：US20110227060A1
公开(公告)日：2011-09-22
申请号：US12887674
申请日：2010-09-22
IPC分类号： H01L29/786
CPC分类号： H01L21/02565 , H01L21/02631 , H01L21/477 , H01L29/04 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching element. An In—Ga—Zn—O-based film having an incubation state that shows an electron diffraction pattern, which is different from a conventionally known amorphous state where a halo shape pattern appears and from a conventionally known crystal state where a spot appears clearly, is formed. The In—Ga—Zn—O-based film having an incubation state is used for a channel formation region of a channel etched thin film transistor.
摘要翻译： 本发明的目的是提供具有良好的电特性和高可靠性的薄膜晶体管，以及包括作为开关元件的薄膜晶体管的半导体器件。 具有显示电子衍射图案的温度状态的In-Ga-Zn-O系膜与常规已知的晕圈形状图案出现的非晶状态以及现有的已知的斑点出现明显的晶体状态不同， 形成了。 具有孵育状态的In-Ga-Zn-O系膜用于沟道蚀刻薄膜晶体管的沟道形成区域。
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公开(公告)号：US20110207255A1
公开(公告)日：2011-08-25
申请号：US13099804
申请日：2011-05-03
IPC分类号： H01L33/02
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。
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公开(公告)号：US07902740B2
公开(公告)日：2011-03-08
申请号：US11935831
申请日：2007-11-06
IPC分类号： H01L51/52
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L51/5206 , H01L51/5253 , H01L2227/323
摘要： A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
摘要翻译： 本发明的发光装置包括：形成在绝缘表面上的第一电极; 覆盖所述第一电极的端部并具有锥形边缘的第一绝缘层; 第二绝缘层，形成在第一电极和第一绝缘层上，并且由选自氧化硅，氮化硅和氮氧化硅中的一种或多种形成; 形成在所述第二绝缘层上的有机化合物层; 以及形成在有机化合物层上的第二电极。
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公开(公告)号：US07859606B2
公开(公告)日：2010-12-28
申请号：US10576177
申请日：2005-09-13
IPC分类号： G02F1/136
CPC分类号： H01L29/78669 , G02F1/1368 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/3248 , H01L29/41733 , H01L29/458 , H01L29/4908 , H01L29/786
摘要： It is an object of the present invention to connect a wiring, an electrode, or the like formed with two incompatible films (an ITO film and an aluminum film) without increasing the cross-sectional area of the wiring and to achieve lower power consumption even when the screen size becomes larger. The present invention provides a two-layer structure including an upper layer and a lower layer having a larger width than the upper layer. A first conductive layer is formed with Ti or Mo, and a second conductive layer is formed with aluminum (pure aluminum) having low electric resistance over the first conductive layer. A part of the lower layer projected from the end section of the upper layer is bonded with ITO.
摘要翻译： 本发明的目的是在不增加布线的横截面积的情况下连接由两个不兼容的膜（ITO膜和铝膜）形成的布线，电极等，并且甚至实现更低的功率消耗 当屏幕尺寸变大时。 本发明提供一种两层结构，其包括具有比上层宽的宽度的上层和下层。 第一导电层由Ti或Mo形成，并且在第一导电层上形成具有低电阻的铝（纯铝）的第二导电层。 从上层的端部突出的下层的一部分与ITO结合。
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公开(公告)号：US20090134399A1
公开(公告)日：2009-05-28
申请号：US12331679
申请日：2008-12-10
CPC分类号： H01L27/3244 , H01L27/322 , H01L27/3248 , H01L51/0011 , H01L51/5052 , H01L51/5206 , H01L51/5209 , H01L51/5218 , H01L51/56 , H01L2251/5315
摘要： A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.
摘要翻译： 将提供一种有源矩阵发光器件的制造方法，其中有源矩阵发光器件可以在较短的时间内以较低的成本与常规的低成本制造。 本发明的特征在于，与配置在有源矩阵型发光元件的像素区域中的每个TFT的半导体层接触或电连接的金属电极采用分层结构。 此外，金属电极被部分蚀刻并用作发光元件的第一电极。 缓冲层，含有有机化合物的层和第二电极层层叠在第一电极上。
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公开(公告)号：US07520790B2
公开(公告)日：2009-04-21
申请号：US10939959
申请日：2004-09-14
申请人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
发明人： Shunpei Yamazaki , Masayuki Sakakura , Masaharu Nagai , Yutaka Matsuda , Kengo Akimoto , Gen Fujii , Tetsuji Yamaguchi
CPC分类号： H01L51/529 , H01L27/12 , H01L27/1214 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L27/3276 , H01L29/66757 , H01L51/5206 , H01L51/5246 , H01L2251/5315 , H01L2251/5323
摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.
摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，耐热平面化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。
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公开(公告)号：US20080079359A1
公开(公告)日：2008-04-03
申请号：US11935831
申请日：2007-11-06
IPC分类号： H01L51/52
CPC分类号： H01L27/1259 , H01L27/1214 , H01L27/3246 , H01L29/42384 , H01L29/4908 , H01L51/5206 , H01L51/5253 , H01L2227/323
摘要： A light-emitting apparatus of the present invention includes: a first electrode formed on an insulating surface; a first insulating layer covering an end portion of the first electrode and having a tapered edge; a second insulating layer formed on the first electrode and the first insulating layer and formed of one kind or a plurality of kinds selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; an organic compound layer formed on the second insulating layer; and a second electrode formed on the organic compound layer.
摘要翻译： 本发明的发光装置包括：形成在绝缘表面上的第一电极; 覆盖所述第一电极的端部并具有锥形边缘的第一绝缘层; 第二绝缘层，形成在第一电极和第一绝缘层上，并且由选自氧化硅，氮化硅和氮氧化硅中的一种或多种形成; 形成在所述第二绝缘层上的有机化合物层; 以及形成在有机化合物层上的第二电极。
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公开(公告)号：US20060292865A1
公开(公告)日：2006-12-28
申请号：US11474933
申请日：2006-06-27
CPC分类号： H01L29/42384 , H01L27/124 , H01L27/1288 , H01L29/78621 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device of the present invention has a first conductive layer, a second conductive layer, an insulating layer which is formed between the first conductive layer and the second conductive layer and which has a contact hole, and a third conductive layer which is connected to the first conductive layer and the second conductive layer and of which at least a part of an end portion is formed inside the contact hole. Near a contact hole where the second conductive layer is connected to the third conductive layer, the third conductive layer does not overlap with the second conductive layer with the first insulating layer interposed therebetween and an end portion of the third conductive layer is not formed over the first insulating layer. This allows suppression of depression and projection of the third conductive layer.
摘要翻译： 本发明的半导体器件具有：第一导电层，第二导电层，形成在第一导电层和第二导电层之间并具有接触孔的绝缘层;以及第三导电层，其与 第一导电层和第二导电层，并且其中至少一部分端部形成在接触孔内。 在第二导电层连接到第三导电层的接触孔附近，第三导电层不与第二导电层重叠，其中第一绝缘层被插入，并且第三导电层的端部不形成在 第一绝缘层。 这允许抑制第三导电层的凹陷和投影。
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公开(公告)号：US20060214008A1
公开(公告)日：2006-09-28
申请号：US11389238
申请日：2006-03-27
IPC分类号： G06K19/06
CPC分类号： H01L27/1082 , B82Y10/00 , G11C11/34 , G11C13/0014 , G11C2213/79 , H01L23/4828 , H01L27/105 , H01L27/1203 , H01L27/1244 , H01L27/28 , H01L29/458 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.
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公开(公告)号：US20060043510A1
公开(公告)日：2006-03-02
申请号：US11184086
申请日：2005-07-19
申请人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
发明人： Shunpei Yamazaki , Satoshi Murakami , Motomu Kurata , Hiroyuki Hata , Mitsuhiro Ichijo , Takashi Ohtsuki , Aya Anzai , Masayuki Sakakura
IPC分类号： H01L29/04
CPC分类号： H04N5/655 , G06F3/02 , H01L27/12 , H01L27/1214 , H01L27/1222 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L27/3258 , H01L27/3276 , H01L33/60 , H01L51/0005 , H01L51/5246 , H01L51/56 , H01L2224/4847 , H01L2227/323 , H01L2251/5323 , H04N5/642
摘要： The present invention provides a method for manufacturing a highly reliable display device at a low cost with high yield. According to the present invention, a step due to an opening in a contact is covered with an insulating layer to reduce the step, and is processed into a gentle shape. A wiring or the like is formed to be in contact with the insulating layer and thus the coverage of the wiring or the like is enhanced. In addition, deterioration of a light-emitting element due to contaminants such as water can be prevented by sealing a layer including an organic material that has water permeability in a display device with a sealing material. Since the sealing material is formed in a portion of a driver circuit region in the display device, the frame margin of the display device can be narrowed.
摘要翻译： 本发明提供了一种以高成本低成本制造高度可靠的显示装置的方法。 根据本发明，由绝缘层覆盖由于接触开口而产生的台阶，以减小台阶，并且被加工成平缓的形状。 布线等形成为与绝缘层接触，从而增强布线等的覆盖。 此外，通过用包封材料密封包括显示装置中具有透水性的有机材料的层，可以防止由诸如水等污染物引起的发光元件的劣化。 由于密封材料形成在显示装置的驱动电路区域的一部分中，所以显示装置的边框可以变窄。
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