公开(公告)号：US08785281B2

公开(公告)日：2014-07-22

申请号：US13369707

申请日：2012-02-09

申请人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

发明人： Tze-Chiang Chen ,  Meikei Ieong ,  Rajarao Jammy ,  Mukesh V. Khare ,  Chun-yung Sung ,  Richard Wise ,  Hongwen Yan ,  Ying Zhang

IPC分类号： H01L21/8234

CPC分类号： H01L21/28079 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/6659

摘要： Methods for fabricating a CMOS structure use a first gate stack located over a first orientation region of a semiconductor substrate. A second gate material layer is located over the first gate stack and a laterally adjacent second orientation region of the semiconductor substrate. A planarizing layer is located upon the second gate material layer. The planarizing layer and the second gate material layer are non-selectively etched to form a second gate stack that approximates the height of the first gate stack. An etch stop layer may also be formed upon the first gate stack. The resulting CMOS structure may comprise different gate dielectrics, metal gates and silicon gates.

摘要翻译： 制造CMOS结构的方法使用位于半导体衬底的第一取向区域上方的第一栅极堆叠。 第二栅极材料层位于第一栅极叠层上方和半导体衬底的横向相邻的第二取向区域上。 平坦化层位于第二栅极材料层上。 平面化层和第二栅极材料层被非选择性蚀刻以形成近似第一栅极堆叠的高度的第二栅极堆叠。 也可以在第一栅极叠层上形成蚀刻停止层。 所得到的CMOS结构可以包括不同的栅极电介质，金属栅极和硅栅极。

公开(公告)号：US20130043559A1

公开(公告)日：2013-02-21

申请号：US13211570

申请日：2011-08-17

申请人： JUNEDONG LEE ,  Xi Li ,  Paul C. Parries ,  Richard Wise ,  Hongwen Yan

发明人： JUNEDONG LEE ,  Xi Li ,  Paul C. Parries ,  Richard Wise ,  Hongwen Yan

IPC分类号： H01L21/20 ,  H01L29/92 ,  H01L21/28

CPC分类号： H01L29/66181 ,  H01L21/3065 ,  H01L21/3081

摘要： A method includes removing an exposed portion of a first portion of a substrate to define a first trench portion partially defined by the first portion of the substrate and expose a second portion of the substrate, the first portion of the substrate disposed on the second portion of the substrate, the second portion of the substrate including an N+ doped silicon material, and removing a portion the exposed second portion of the substrate with an isotropic etching process to define a second trench portion.

摘要翻译： 一种方法包括去除衬底的第一部分的暴露部分以限定部分地由衬底的第一部分限定并且暴露衬底的第二部分的第一沟槽部分，衬底的第一部分设置在衬底的第二部分上 衬底，衬底的第二部分包括N +掺杂的硅材料，并且用各向同性蚀刻工艺去除衬底的暴露的第二部分的一部分以限定第二沟槽部分。

公开(公告)号：US20120153474A1

公开(公告)日：2012-06-21

申请号：US12975327

申请日：2010-12-21

申请人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

发明人： Xiang Hu ,  Helen Wang ,  Arifuzzaman (Arif) Sheikh ,  Habib Hichri ,  Richard Wise

IPC分类号： H01L21/283 ,  H01L29/49

CPC分类号： H01L21/31138 ,  H01L21/32139

摘要： A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.

摘要翻译： 集成电路系统的制造方法包括：提供基板; 在衬底上形成多晶硅层; 在所述多晶硅层上形成抗反射涂层; 将抗反射涂层图案蚀刻到抗反射涂层中，在多晶硅层上留下抗反射涂层残留物; 以及用包括溴化氢，氯和氧的蚀刻剂气体混合物蚀刻抗反射涂层残余物以除去抗反射涂层残余物以减轻多晶硅突起的形成。

公开(公告)号：US20110171827A1

公开(公告)日：2011-07-14

申请号：US12687282

申请日：2010-01-14

申请人： Mukta G. Farooq ,  Emily R. Kinser ,  Richard Wise ,  Hakeem Yusuff

发明人： Mukta G. Farooq ,  Emily R. Kinser ,  Richard Wise ,  Hakeem Yusuff

IPC分类号： H01L21/768

CPC分类号： H01L21/76847 ,  H01L21/0337 ,  H01L21/32136 ,  H01L21/76898 ,  H01L23/481 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A method includes patterning a photoresist layer on a structure to define an opening and expose a first planar area on a substrate layer, etching the exposed planar area to form a cavity having a first depth in the structure, removing a second portion of the photoresist to expose a second planar area on the substrate layer, forming a doped portion in the second planar area, and etching the cavity to expose a first conductor in the structure and the doped portion to expose a second conductor in the structure.

摘要翻译： 一种方法包括在结构上图案化光致抗蚀剂层以限定开口并暴露衬底层上的第一平面区域，蚀刻暴露的平面区域以形成在结构中具有第一深度的空腔，将光致抗蚀剂的第二部分去除 在衬底层上露出第二平面区域，在第二平面区域中形成掺杂部分，并且蚀刻腔体以暴露结构中的第一导体和掺杂部分以暴露结构中的第二导体。

公开(公告)号：US07871893B2

公开(公告)日：2011-01-18

申请号：US12020887

申请日：2008-01-28

申请人： Gregory Costrini ,  David M. Dobuzinsky ,  Thomas S. Kanarsky ,  Munir D. Naeem ,  Christopher D. Sheraw ,  Richard Wise

发明人： Gregory Costrini ,  David M. Dobuzinsky ,  Thomas S. Kanarsky ,  Munir D. Naeem ,  Christopher D. Sheraw ,  Richard Wise

IPC分类号： H01L21/76 ,  H01L21/763

CPC分类号： H01L29/045 ,  H01L21/76224

摘要： Disclosed are embodiments of a hybrid-orientation technology (HOT) wafer and a method of forming the HOT wafer with improved shallow trench isolation (STI) structures for patterning devices in both silicon-on-insulator (SOI) regions, having a first crystallographic orientation, and bulk regions, having a second crystallographic orientation. The improved STI structures are formed using a non-selective etch process to ensure that all of the STI structures and, particularly, the STI structures at the SOI-bulk interfaces, each extend to the semiconductor substrate and have an essentially homogeneous (i.e., single material) and planar (i.e., divot-free) bottom surface that is approximately parallel to the top surface of the substrate. Optionally, an additional selective etch process can be used to extend the STI structures a predetermined depth into the substrate.

摘要翻译： 公开了混合取向技术（HOT）晶片的实施例以及形成具有改进的浅沟槽隔离（STI）结构的HOT晶片的方法，用于在绝缘体上硅（SOI）区域中图案化器件，具有第一晶体取向 和具有第二结晶取向的体区。 使用非选择性蚀刻工艺形成改进的STI结构，以确保所有STI结构，特别是SOI-体界面处的STI结构各自延伸到半导体衬底并且具有基本均匀的（即，单个 材料）和大致平行于衬底的顶表面的平面（即，无自由）底表面。 可选地，可以使用附加的选择性蚀刻工艺来将STI结构延伸到衬底中的预定深度。

公开(公告)号：US20090107956A1

公开(公告)日：2009-04-30

申请号：US11877965

申请日：2007-10-24

申请人： Michael R. Sievers ,  Kaushik A. Kumar ,  Andres F. Munoz ,  Richard Wise

发明人： Michael R. Sievers ,  Kaushik A. Kumar ,  Andres F. Munoz ,  Richard Wise

IPC分类号： B05D5/00 ,  C23F1/00

CPC分类号： H01L21/31116 ,  H01L21/67069 ,  H01L21/67248 ,  Y10S438/978

摘要： A technique is described whereby temperature gradients are created within a semiconductor wafer. Temperature sensitive etching and/or deposition processes are then employed. These temperature sensitive processes proceed at different rates in regions with different temperatures. To reduce pinch off in etching processes, a temperature sensitive etch process is selected and a temperature gradient is created between the surface and subsurface of a wafer such that the etching process proceeds more slowly at the surface than deeper in the wafer. This reduces “crusting” of solid reaction products at trench openings, thereby eliminating pinch off in many cases. Similar temperature-sensitive deposition processes can be employed to produce void-free high aspect ratio conductors and trench fills.

摘要翻译： 描述了在半导体晶片内产生温度梯度的技术。 然后采用温度敏感的蚀刻和/或沉积工艺。 这些温度敏感过程在不同温度的区域中以不同的速率进行。 为了减少蚀刻过程中的夹断，选择温度敏感的蚀刻工艺，并且在晶片的表面和次表面之间产生温度梯度，使得蚀刻工艺在表面上比在晶片更深地进行得更慢。 这减少了沟槽开口处的固体反应产物的“结壳”，从而在许多情况下消除了夹断。 可以使用类似的温度敏感的沉积工艺来产生无空隙的高纵横比导体和沟槽填充物。

公开(公告)号：US20070236092A1

公开(公告)日：2007-10-11

申请号：US11485289

申请日：2006-07-13

申请人： Richard Wise

发明人： Richard Wise

IPC分类号： H02K49/00 ,  H02K47/00

CPC分类号： H02K7/025 ,  B60K17/12 ,  H02K49/102 ,  H02K49/108 ,  Y02E60/16 ,  Y02T10/6204

摘要： A power generating system includes a torque converter system receiving a rotational motion having a first torque from a source and producing a rotational output having a second torque different from the first torque, a transfer system having a first portion coupled to the rotational output of the torque converter system and a second portion magnetically coupled to the first portion, and a generator system coupled to the transfer system to produce and electrical output.

公开(公告)号：US20070228849A1

公开(公告)日：2007-10-04

申请号：US11485291

申请日：2006-07-13

申请人： Richard Wise

发明人： Richard Wise

IPC分类号： H02K7/06 ,  H02K49/00

CPC分类号： H02K7/025 ,  B60K17/12 ,  H02K49/102 ,  H02K49/108 ,  Y02E60/16 ,  Y02T10/6204

摘要： A power generating system includes a torque converter system receiving a rotational motion having a first torque from a source and producing a rotational output having a second torque different from the first torque, a transfer system having a first portion coupled to the rotational output of the torque converter system and a second portion magnetically coupled to the first portion, and a generator system coupled to the transfer system to produce and electrical output.

摘要翻译： 发电系统包括转矩系统，其接收来自源的第一转矩的旋转运动，并产生具有不同于第一转矩的第二转矩的转动输出;转移系统，具有与转矩的转动输出相连的第一部分 转换器系统和磁耦合到第一部分的第二部分，以及耦合到传输系统以产生和电输出的发电机系统。

公开(公告)号：US20070046117A1

公开(公告)日：2007-03-01

申请号：US11592138

申请日：2006-11-03

申请人： Richard Wise

发明人： Richard Wise

IPC分类号： H02K7/06 ,  H02K49/00

CPC分类号： H02K53/00 ,  B60K17/12 ,  H02K7/025 ,  H02K49/102 ,  Y02E60/16 ,  Y02T10/6204 ,  Y10T464/30

摘要： A torque converter device comprises a flywheel rotatable about a first axis, the flywheel including a first body portion having a first radius from a circumferential surface and a first radius of curvature, a first plurality of magnets mounted in the first body portion, each having first ends disposed from the circumferential surface of the first body portion, and each of the first ends of first plurality of magnets having a second radius of curvature similar to the first radius of curvature of the first body portion, a second plurality of magnets mounted in the first body portion, each of the second plurality of magnets being disposed from the circumferential surface of the first body portion, and a generator disk rotatable about a second axis angularly offset with respect to the first axis, the generator disk including a second body portion, and a third plurality of magnets within the second body portion for magnetically coupling to the first and second pluralities of magnets.

摘要翻译： 变矩器装置包括可围绕第一轴线旋转的飞轮，飞轮包括第一主体部分，第一主体部分具有从圆周表面的第一半径和第一曲率半径，安装在第一主体部分中的第一多个磁体，每个具有第一主体部分 从第一主体部分的圆周表面设置的端部，并且第一多个磁体的每个第一端部具有与第一主体部分的第一曲率半径相似的第二曲率半径，安装在第一主体部分中的第二多个磁体 第一主体部分，第二多个磁体中的每一个从第一主体部分的圆周表面设置;以及发电机盘，可围绕第二轴线旋转，第二轴线相对于第一轴线成角度偏移，发电机盘片包括第二主体部分， 以及第二主体部分内的第三多个磁体，用于磁耦合到第一和第二多个磁体。

公开(公告)号：US20060260985A1

公开(公告)日：2006-11-23

申请号：US11455810

申请日：2006-06-20

申请人： Richard Wise

发明人： Richard Wise

IPC分类号： B03C1/00

CPC分类号： B03C1/04 ,  B03C1/22 ,  B03C1/23

摘要： Apparatus is provided for separating non-magnetic mineral values from a source containing magnetic material and non magnetic material. The apparatus includes first and second conveyers in overlying relation which counter-rotate relative to one another. One of the conveyers includes a magnetic assembly which cooperates with paddles on the upper conveyer to progressively isolate values from magnetic material. Multiple stages are provided for intermittent magnetic interactions such that the non-magnetic materials are effectively isolated from the magnetic materials.