公开(公告)号：US08142606B2

公开(公告)日：2012-03-27

申请号：US11759542

申请日：2007-06-07

申请人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  Beom Soo Park ,  John M. White

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： C23C16/45565 ,  H01L31/182 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/546 ,  Y02P70/521

摘要： Methods and apparatus having a gradient spacing created between a substrate support assembly and a gas distribution plate for depositing a silicon film for solar cell applications are provided. In one embodiment, an apparatus for depositing films for solar cell applications may include a processing chamber, a substrate support disposed in the processing chamber and configured to support a quadrilateral substrate thereon, and a gas distribution plate disposed in the processing chamber above the substrate support, wherein a bottom surface of the gas distribution plate has a perimeter that includes edges and corners, and wherein the corners of the gas distribution plate are closer to the substrate support than the edges of the gas distribution plate.

摘要翻译： 提供了在衬底支撑组件和用于沉积太阳能电池应用的硅膜的气体分配板之间产生梯度间隔的方法和装置。 在一个实施例中，一种用于沉积太阳能电池薄膜的设备可以包括处理室，设置在处理室中的基板支撑件，并且被配置为在其上支撑四边形基板，以及布置在处理室中的基板支撑件上方的气体分配板 其中，所述气体分配板的底面具有包括边缘和角部的周边，并且其中所述气体分配板的角部比所述气体分配板的边缘更靠近所述基板支撑。

公开(公告)号：US08075690B2

公开(公告)日：2011-12-13

申请号：US12234359

申请日：2008-09-19

申请人： Ernst Keller ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

发明人： Ernst Keller ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/3244 ,  C23C16/45565

摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

公开(公告)号：US20110241892A1

公开(公告)日：2011-10-06

申请号：US13042408

申请日：2011-03-07

申请人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

发明人： Beom Soo Park ,  Soo Young Choi ,  John M. White ,  Hong Soon Kim ,  James Hoffman

IPC分类号： G08B21/00 ,  G01R13/14

CPC分类号： H01J37/32174 ,  H01J37/32935 ,  H03H7/40

摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.

摘要翻译： 通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。 在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。 在第二方面，第二对下限和上限不适合电源的频率。 两个方面优选一起用于检测异常状况的不同出现。

公开(公告)号：US20100288197A1

公开(公告)日：2010-11-18

申请号：US12779167

申请日：2010-05-13

申请人： Soo Young Choi ,  Suhail Anwar ,  Gaku Furuta ,  Beom Soo Park ,  Robin L. Tiner ,  John M. White ,  Shinichi Kurita

发明人： Soo Young Choi ,  Suhail Anwar ,  Gaku Furuta ,  Beom Soo Park ,  Robin L. Tiner ,  John M. White ,  Shinichi Kurita

IPC分类号： C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4404 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.

摘要翻译： 本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。 在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。 射频是RF处理室遇到的一个常见问题。 为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在 最靠近室壁的淋浴头。 阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

公开(公告)号：US07754294B2

公开(公告)日：2010-07-13

申请号：US12215602

申请日：2008-06-25

申请人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

发明人： Soo Young Choi ,  Tae Kyung Won ,  John M. White

IPC分类号： H05H1/24

CPC分类号： H01L21/3185

摘要： We have discovered that controlling a combination of PECVD deposition process parameters during deposition of silicon-containing thin film provides improved control over surface standing wave effects. By minimizing surface standing wave effects, the uniformity of film properties (particularly film thickness) across a substrate surface onto which the films have been deposited is improved.

摘要翻译： 我们已经发现，在沉积含硅薄膜期间控制PECVD沉积工艺参数的组合提供了改进的对表面驻波效应的控制。 通过最小化表面驻波效应，改善了其上沉积有薄膜的基板表面上的膜性质（特别是膜厚度）的均匀性。

公开(公告)号：US20100089319A1

公开(公告)日：2010-04-15

申请号：US12576991

申请日：2009-10-09

申请人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela ,  Jonghoon Baek ,  Jriyan Jerry Chen ,  Steve McPherson ,  Soo Young Choi ,  Robin L. Tiner

发明人： Carl A. Sorensen ,  John M. White ,  Jozef Kudela ,  Jonghoon Baek ,  Jriyan Jerry Chen ,  Steve McPherson ,  Soo Young Choi ,  Robin L. Tiner

IPC分类号： C23C16/00

CPC分类号： C23C16/4585 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32174

摘要： A method and apparatus having a RF return path with low impedance coupling a substrate support to a chamber wall in a plasma processing system is provided. In one embodiment, a processing chamber includes a chamber body having a chamber sidewall, a bottom and a lid assembly supported by the chamber sidewall defining a processing region, a substrate support disposed in the processing region of the chamber body, a shadow frame disposed on an edge of the substrate support assembly, and a RF return path having a first end coupled to the shadow frame and a second end coupled to the chamber sidewall.

摘要翻译： 提供了一种具有低阻抗的RF返回路径的方法和装置，其将衬底支撑件耦合到等离子体处理系统中的室壁。 在一个实施例中，处理室包括室主体，其具有室侧壁，底部和盖组件，其由限定加工区域的室侧壁支撑，设置在室主体的处理区域中的基板支撑件， 衬底支撑组件的边缘，以及RF返回路径，其具有耦合到阴影框架的第一端和联接到室侧壁的第二端。

公开(公告)号：US20090324847A1

公开(公告)日：2009-12-31

申请号：US12583814

申请日：2009-08-25

申请人： Soo Young Choi ,  John M. White

发明人： Soo Young Choi ,  John M. White

IPC分类号： C23C16/50

CPC分类号： C23C16/4401 ,  C23C16/5096 ,  H01J37/3244 ,  H01J2237/022

摘要： It has been discovered that a parasitic plasma problem which has existed with respect to incoming plasma source gases present in a source gas feed line to a plasma processing chamber can be avoided. The stability of a parasitic plasma is avoided by installing an RF resistor conduit in the source gas feed line and increasing the pressure in the RF resistor conduit through which the plasma source gases flow. Use of a variable surface restrictor in the RF resistor conduit or between the RF resistor conduit and the plasma processing chamber enables not only avoidance of the formation of a parasitic plasma in incoming plasma source gases, but also easier cleaning of the processing chamber plasma generation system when a remotely generated plasma is used for such cleaning.

摘要翻译： 已经发现，可以避免存在于等离子体处理室的源气体供给管线中的入射等离子体源气体存在的寄生等离子体问题。 通过在源气体供给管线中安装RF电阻器管道并且增加等离子体源气体通过其流过的RF电阻器管道中的压力来避免寄生等离子体的稳定性。 在RF电阻器导管中或在RF电阻器导管和等离子体处理室之间使用可变表面限制器不仅能够避免在输入等离子体源气体中形成寄生等离子体，而且可以更容易地清洁处理室等离子体产生系统 当远程产生的等离子体用于这种清洁时。

公开(公告)号：US20090071403A1

公开(公告)日：2009-03-19

申请号：US12233443

申请日：2008-09-18

申请人： Soo Young Choi ,  Robin L. Tiner ,  John M. White

发明人： Soo Young Choi ,  Robin L. Tiner ,  John M. White

IPC分类号： C23C16/513

CPC分类号： C23C16/24 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32522

摘要： The invention generally relates to a plasma enhanced chemical vapor deposition chamber for depositing amorphous or microcrystalline silicon on a glass substrate to fabricate solar voltaic cells. The chamber includes a backing plate having at least one fluid receiving conduit to receive cooling fluid to remove heat generated within the chamber by the plasma, thereby stabilizing and cooling the backing plate to assure the uniformity of deposition of materials on the surface of the substrate.

摘要翻译： 本发明一般涉及用于在玻璃基板上沉积非晶或微晶硅以制造太阳能电池的等离子体增强化学气相沉积室。 该腔室包括具有至少一个流体接收导管以便接收冷却流体以利用等离子体去除室内产生的热量的背板，从而稳定和冷却背板，以确保材料在衬底表面上的沉积的均匀性。

公开(公告)号：US07429410B2

公开(公告)日：2008-09-30

申请号：US11188922

申请日：2005-07-25

申请人： Ernst Keller ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

发明人： Ernst Keller ,  John M. White ,  Robin L. Tiner ,  Jiri Kucera ,  Soo Young Choi ,  Beom Soo Park ,  Michael Starr

IPC分类号： H05H1/24

CPC分类号： H01J37/3244 ,  C23C16/45565

摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gasses through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

公开(公告)号：US20080132080A1

公开(公告)日：2008-06-05

申请号：US11607702

申请日：2006-12-01

申请人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

发明人： Suhail Anwar ,  Chung-Hee Park ,  Beom Soo Park ,  Han Byoul Kim ,  Soo Young Choi ,  John M. White

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3185 ,  H01L21/67161 ,  H01L21/67207 ,  H01L21/67236 ,  H01L29/66765 ,  H01L31/1804 ,  H01L31/202 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.

摘要翻译： 已经发现并进一步开发了含硅膜的PECVD沉积方法。 当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法特别有用。 该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。 通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从 等离子处理区。