公开(公告)号：US07361548B2

公开(公告)日：2008-04-22

申请号：US11065086

申请日：2005-02-24

Applicant: Jae-Soon Lim ,  Sung-Tae Kim ,  Young-Sun Kim ,  Young-Geun Park ,  Suk-Jin Chung ,  Seung-Hwan Lee

Inventor： Jae-Soon Lim ,  Sung-Tae Kim ,  Young-Sun Kim ,  Young-Geun Park ,  Suk-Jin Chung ,  Seung-Hwan Lee

IPC: H01L21/8242

CPC classification number: H01L21/0228 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/28568 ,  H01L21/3141 ,  H01L27/10852 ,  H01L28/75 ,  H01L28/91

Abstract: Methods for forming a capacitor using an atomic layer deposition process include providing a reactant including an aluminum precursor onto a substrate to chemisorb a portion of the reactant to a surface of the substrate. The substrate has an underlying structure including a lower electrode. An ammonia (NH3) plasma is provided onto the substrate to form a dielectric layer including aluminum nitride on the substrate including the lower electrode. An upper electrode is formed on the dielectric layer. A second dielectric layer may be provided oil the first dielectric layer.

Abstract translation: 使用原子层沉积工艺形成电容器的方法包括在衬底上提供包含铝前体的反应物以将反应物的一部分化学吸附到衬底的表面。 衬底具有包括下电极的底层结构。 在基板上提供氨（NH 3 3）等离子体，以在包括下电极的基板上形成包括氮化铝的电介质层。 在电介质层上形成上电极。 第二电介质层可以设置在第一电介质层上。

公开(公告)号：US07205219B2

公开(公告)日：2007-04-17

申请号：US10823221

申请日：2004-04-13

Applicant: Se-Hoon Oh ,  Jung-Hee Chung ,  Jae-Hyoung Choi ,  Jeong-Sik Choi ,  Sung-Tae Kim ,  Cha-Young Yoo

Inventor： Se-Hoon Oh ,  Jung-Hee Chung ,  Jae-Hyoung Choi ,  Jeong-Sik Choi ,  Sung-Tae Kim ,  Cha-Young Yoo

IPC: H01L21/44

CPC classification number: H01L27/10855 ,  H01L21/76889 ,  H01L21/76895 ,  H01L27/10817 ,  H01L27/10894 ,  H01L27/10897

Abstract: Integrated circuit devices, for example, dynamic random access memory (DRAM) devices, are provided including an integrated circuit substrate having a cell array region and a peripheral circuit region. A buried contact plug is provided on the integrated circuit substrate in the cell array region and a resistor is provided on the integrated circuit substrate in the peripheral circuit region. A first pad contact plug is provided on the buried contact plug in the cell array region and a second pad contact plug is provided on the resistor in the peripheral circuit region. An ohmic layer is provided between the first pad contact plug and the buried contact plug and between the second pad contact plug and the resistor. Related methods of fabricating integrated circuit devices are also provided.

Abstract translation: 提供集成电路器件，例如动态随机存取存储器（DRAM）器件，其包括具有单元阵列区域和外围电路区域的集成电路衬底。 在单元阵列区域中的集成电路基板上设置埋入式接触插塞，并且在外围电路区域中的集成电路基板上设置电阻器。 第一焊盘接触插头设置在电池阵列区域中的埋入式接触插塞上，并且在外围电路区域中的电阻器上设置第二焊盘接触插头。 在第一焊盘接触插塞和埋地接触插头之间以及第二焊盘接触插头和电阻器之间提供欧姆层。 还提供了制造集成电路器件的相关方法。

公开(公告)号：US20060288941A1

公开(公告)日：2006-12-28

申请号：US11514266

申请日：2006-09-01

Applicant: Kyung-Soo Yi ,  Chul-Young Jang ,  Sung-Jae Jung ,  Yoon-Heung Tak ,  Sung-Tae Kim ,  Gol-Hee Lee

Inventor： Kyung-Soo Yi ,  Chul-Young Jang ,  Sung-Jae Jung ,  Yoon-Heung Tak ,  Sung-Tae Kim ,  Gol-Hee Lee

IPC: C23C16/00

CPC classification number: C23C14/12 ,  C23C14/243

Abstract: The present invention relates to an evaporation source for evaporating an organic electroluminescent layer. In particular, the present invention relates to the evaporation source preventing an aperture, through which a vaporized evaporation material is emitted, from being clogged by restricting heat transfer to outward. The evaporation source according to the present invention includes a cell retaining an evaporation material therein; a cell cap installed on the upper part of the cell and having a cell cap aperture for emitting a vaporized evaporation material; an external wall placed in the outside of the cell to support a heating means set up at the outside of the cell; a cover placed above the cell cap, fixed to the upper end of the external wall, and having a cover aperture corresponding to the cell cap aperture; and a shut-off plate placed between the cover and the cell cap and having a shut-off plate aperture corresponding to the cell cap aperture and the cover aperture in the center of the shut-off plate.

Abstract translation: 本发明涉及蒸发有机电致发光层的蒸发源。 特别地，本发明涉及防止通过限制向外传热的方式堵塞蒸发蒸发材料的孔的蒸发源。 根据本发明的蒸发源包括在其中保留蒸发材料的电池; 电池盖安装在电池的上部并具有用于发射汽化蒸发材料的电池盖孔; 设置在电池外部的外壁，以支撑设置在电池外部的加热装置; 固定在外壁的上端，并具有对应于电池盖孔的盖孔的盖子上的盖子; 以及置于盖和电池盖之间并具有对应于电池盖开口的关闭板孔和关闭板中心的盖孔的截止板。

公开(公告)号：US20060288940A1

公开(公告)日：2006-12-28

申请号：US11514261

申请日：2006-09-01

Applicant: Kyung-Soo Yi ,  Sung-Jae Jung ,  Yoon-Heung Tak ,  Sung-Tae Kim ,  Gol-Hee Lee

Inventor： Kyung-Soo Yi ,  Sung-Jae Jung ,  Yoon-Heung Tak ,  Sung-Tae Kim ,  Gol-Hee Lee

IPC: C23C16/00

CPC classification number: C23C14/12 ,  C23C14/243

Abstract: The present invention relates to an evaporation source for evaporating an organic electroluminescent layer. In particular, the present invention relates to the evaporation source preventing an aperture, through which a vaporized evaporation material is emitted, from being clogged by restricting heat transfer to outward. The evaporation source according to the present invention includes a cell retaining an evaporation material therein; a cell cap installed on the upper part of the cell and having a cell cap aperture for emitting a vaporized evaporation material; an external wall placed in the outside of the cell to support a heating means set up at the outside of the cell; a cover placed above the cell cap, fixed to the upper end of the external wall, and having a cover aperture corresponding to the cell cap aperture; and a shut-off plate placed between the cover and the cell cap and having a shut-off plate aperture corresponding to the cell cap aperture and the cover aperture in the center of the shut-off plate.

公开(公告)号：US20060244147A1

公开(公告)日：2006-11-02

申请号：US11339086

申请日：2006-01-25

Applicant: Jong-Cheol Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo ,  Gab-Jin Nam ,  Young-Geun Park ,  Jae-Hyoung Choi ,  Jae-Hyun Yeo ,  Ha-Jin Lim ,  Yun-Seok Kim

Inventor： Jong-Cheol Lee ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo ,  Gab-Jin Nam ,  Young-Geun Park ,  Jae-Hyoung Choi ,  Jae-Hyun Yeo ,  Ha-Jin Lim ,  Yun-Seok Kim

IPC: H01L23/48

CPC classification number: H01L21/022 ,  H01L21/02142 ,  H01L21/02156 ,  H01L21/02175 ,  H01L21/28273 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/11502 ,  H01L27/11521

Abstract: In a method of manufacturing a dielectric structure, after a tunnel oxide layer pattern is formed on a substrate, a floating gate is formed on the tunnel oxide layer. After a first dielectric layer pattern including a metal silicon oxide and a second dielectric layer pattern including a metal silicon oxynitride are formed, a control gate is formed on the dielectric structure. Since the dielectric structure includes at least one metal silicon oxide layer and at least one metal silicon oxynitride layer, the dielectric structure may have a high dielectric constant and a good thermal resistance. A non-volatile semiconductor memory device including the dielectric structure may have good electrical characteristics such as a large capacitance and a low leakage current.

Abstract translation: 在制造电介质结构的方法中，在衬底上形成隧道氧化物层图案之后，在隧道氧化物层上形成浮栅。 在形成包括金属氧化硅和包括金属氮氧化硅的第二电介质层图案的第一电介质层图案之后，在电介质结构上形成控制栅极。 由于介电结构包括至少一个金属氧化硅层和至少一个金属氮氧化硅层，所以介电结构可以具有高介电常数和良好的耐热性。 包括电介质结构的非易失性半导体存储器件可能具有良好的电特性，例如大电容和低漏电流。

公开(公告)号：US20060205198A1

公开(公告)日：2006-09-14

申请号：US11372117

申请日：2006-03-10

Applicant: Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

Inventor： Young-Geun Park ,  Jae-Hyun Yeo ,  Eun-Ae Chung ,  Ki-Vin Im ,  Young-Sun Kim ,  Sung-Tae Kim ,  Cha-Young Yoo

IPC: H01L21/8242 ,  H01L21/3205 ,  H01L21/4763

CPC classification number: H01L21/02205 ,  C23C16/405 ,  C23C16/45525 ,  C23C16/45553 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

Abstract: In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxidizing agent to form the thin film including hafnium oxide on the substrate. The hafnium precursor may be employed for forming a gate insulation layer of a transistor or a dielectric layer of a capacitor.

公开(公告)号：US20060190928A1

公开(公告)日：2006-08-24

申请号：US11154627

申请日：2005-06-16

Applicant: Sung-Tae Kim ,  Jeong-Ho Cha ,  Tae-Sung Park

Inventor： Sung-Tae Kim ,  Jeong-Ho Cha ,  Tae-Sung Park

IPC: G06F9/44

CPC classification number: H04L41/00

Abstract: The present invention relates to a device and method for managing a communication equipment, such as a router or a switch, using a command-line interface (CLI). A managing unit managing the communication equipment stores management information, which is a newly added software module or command, in a string format in a management file storage, and the management information is parsed in a parser and a newly registered management information is added to a database, thereby registering new management information without the need of compiling a CLI agent.

Abstract translation: 本发明涉及使用命令行界面（CLI）来管理诸如路由器或交换机的通信设备的设备和方法。 管理通信设备的管理单元以管理文件存储中的字符串格式存储作为新添加的软件模块或命令的管理信息，并且在解析器中解析管理信息，并将新登记的管理信息添加到 数据库，从而注册新的管理信息，而无需编译CLI代理。

公开(公告)号：US20060166707A1

公开(公告)日：2006-07-27

申请号：US11341268

申请日：2006-01-26

Applicant: Sung-Tae Kim

Inventor： Sung-Tae Kim

IPC: H04B1/38 ,  H04M1/00

CPC classification number: H04M1/7258

Abstract: A control apparatus for an end key in a portable terminal employing a keypad that enables a cathode control and the portable terminal incorporating therein the apparatus are provided. The control apparatus comprises a main power supply switch connected to a power supply unit and having at least control port for supplying a power to the portable terminal by being turned on if the control port is grounded, and an end key including a ground terminal connected to the ground and a first terminal coupled with the control port of the main power supply switch, wherein the first terminal forms a short circuit with the ground terminal if the end key is pressed.

Abstract translation: 提供了一种使用能够进行阴极控制的小键盘的便携式终端中的终端键的控制装置以及并入其中的便携式终端。 所述控制装置包括连接到电源单元的主电源开关，并且至少具有用于通过在所述控制端口接地时被接通来向便携式终端提供电力的控制端口，以及包括接地端子连接到 接地和与主电源开关的控制端口耦合的第一端子，其中如果结束键被按压，则第一端子与接地端子形成短路。

公开(公告)号：US20060063346A1

公开(公告)日：2006-03-23

申请号：US11149708

申请日：2005-06-10

Applicant: Jong-Cheol Lee ,  Ki-Vin Im ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo ,  Han-Mei Choi ,  Gab-Jin Nam

Inventor： Jong-Cheol Lee ,  Ki-Vin Im ,  Sung-Tae Kim ,  Young-Sun Kim ,  Cha-Young Yoo ,  Han-Mei Choi ,  Gab-Jin Nam

IPC: H01L21/20

CPC classification number: H01L21/0228 ,  C23C16/45531 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/515 ,  H01L21/02274 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31691 ,  H01L28/40 ,  H01L28/65

Abstract: In a method of forming a layer using an atomic layer deposition process, after a substrate is loaded into a chamber, a reactant is provided onto the substrate to form a preliminary layer. Atoms in the preliminary layer are partially removed from the preliminary layer using plasma formed from an inert gas such as an argon gas, a xenon gas or a krypton gas, or an inactive gas such as an oxygen gas, a nitrogen gas or a nitrous oxide gas to form a desired layer. Processes for forming the desired layer may be simplified. A highly integrated semiconductor device having improved reliability may be economically manufactured so that time and costs required for the manufacturing of the semiconductor device may be reduced.

Abstract translation: 在使用原子层沉积工艺形成层的方法中，在将衬底装载到室中之后，将反应物提供到衬底上以形成预备层。 使用由诸如氩气，氙气或氪气等惰性气体形成的等离子体或氧气，氮气或一氧化二氮等惰性气体，从预备层中部分除去原料中的原子 气体形成所需层。 可以简化用于形成所需层的工艺。 可以经济地制造具有提高的可靠性的高度集成的半导体器件，从而可以减少制造半导体器件所需的时间和成本。

公开(公告)号：US20060060907A1

公开(公告)日：2006-03-23

申请号：US11273505

申请日：2005-11-14

Applicant: Ki-Chul Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  Sung-Tae Kim ,  Thomas Kwon ,  Han-Mei Choi ,  Jae-Soon Lim

Inventor： Ki-Chul Kim ,  Young-Sun Kim ,  Gab-Jin Nam ,  Sung-Tae Kim ,  Thomas Kwon ,  Han-Mei Choi ,  Jae-Soon Lim

IPC: H01L27/108

CPC classification number: H01L21/32051 ,  H01L27/10817 ,  H01L27/10852 ,  H01L27/10855 ,  H01L27/10894 ,  H01L27/10897 ,  H01L28/91

Abstract: A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.

Abstract translation: 导电接触插塞延伸穿过电介质层中的开口以接触衬底并且包括延伸到邻近开口的电介质层上的加宽焊盘部分。 欧姆图案设置在插头的焊盘部分上，并且阻挡图案设置在欧姆图案上。 凹陷的第一电容器电极设置在阻挡图案上并且限定了远离基板的空腔。 电容器电介质层符合第一电容器电极的表面，并且第二电容器电极设置在与第一电容器电极相对的电容器电介质层上。 欧姆图案的侧壁，接触塞的阻挡图案和焊盘部分可以是基本上共面的，并且该器件还可以包括符合至少欧姆图案的侧壁，阻挡图案和焊盘部分的蚀刻停止层 接触插头。 描述相关的制造方法。