Abstract:
A plasma display apparatus comprising a connector is provided. The plasma display apparatus comprises a plasma display panel comprising an electrode of a predetermined width and a connector comprising an electrode line of a width narrower than the predetermined width of the electrode to supply a driving signal to the electrode. A distance between the electrode line and an adjacent electrode line is longer than a distance between the electrode and an adjacent electrode.
Abstract:
Disclosed are methods for fabricating semiconductor devices incorporating a composite trench isolation structure comprising a first oxide pattern, a SOG pattern and a second oxide pattern wherein the oxide patterns enclose the SOG pattern. The methods include the deposition of a first oxide layer and a SOG layer to fill recessed trench regions formed in the substrate. The first oxide layer and the SOG layer are then subjected to a planarization sequence including a CMP process followed by an etchback process to form a composite structure having a substantially flat upper surface that exposes both the oxide and the SOG material. The second oxide layer is then applied and subjected to a similar CMP/etchback sequence to obtain a composite structure having an upper surface that is recessed relative to a plane defined by the surfaces of adjacent active regions.
Abstract:
The present invention relates to a method of manufacturing a reflective polarizing film for a liquid crystal display device in which cholesteric liquid crystal layers having different selective light-reflecting wavelengths are laminated in the laminated coating method, thus a forming liquid crystal film that covers a visible light region and ¼λ retardation film are attached to the liquid crystal film. In this case, two or more cholestric liquid crystal layers having different selective light-reflecting wavelengths are laminated in order from the shorter wavelength to the longer wavelength in the laminated coating method. Further, during the lamination, orientation layers are laminated between the liquid crystal layers to maximize the selective reflection characteristic of the cholesteric liquid crystal.
Abstract:
Multi-layered structures formed using atomic-layer deposition processes include multiple metal oxide layers wherein the metal oxide layers are formed without the presence of interlayer oxide layers and may include different metal oxide compositions.
Abstract:
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.
Abstract:
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.
Abstract:
In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.
Abstract:
Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.
Abstract:
A thin film structure and a capacitor using the film structure and methods for forming the same. The thin film structure may include a first film formed on a substrate using a first reactant and an oxidant for oxidizing the first reactant. A second film may be formed on the first film to suppress crystallization of the first film. A capacitor may include a dielectric layer, which may further include the first thin film and the second thin film.
Abstract:
Disclosed is a method for forming metal oxide dielectric layers, more particularly HfO2 dielectric layers, using an atomic layer deposition (ALD) method in which a series of thin intermediate layers are formed and treated with one or more oxidizers and nitrogents before the next intermediate layer is formed on the substrate. The intermediate oxidation treatments reduce the number of organic contaminants incorporated into the metal oxide layer from the organometallic precursors to produce a dielectric layer having improved current leakage characteristics. The dielectric layers formed in this manner remain susceptible to crystallization if exposed to temperatures much above 550° C., so subsequent semiconductor manufacturing processes should be modified or eliminated to avoid such temperatures or limit the duration at such temperatures to maintain the performance of the dielectric materials.