公开(公告)号：US09831154B2

公开(公告)日：2017-11-28

申请号：US14331046

申请日：2014-07-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tsung-Han Tsai ,  Volume Chien ,  Yung-Lung Hsu ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Po-Zen Chen

IPC: H01L21/44 ,  H01L21/76 ,  H01L23/48 ,  H01L21/768 ,  H01L27/06 ,  H01L27/146

CPC classification number: H01L23/481 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76898 ,  H01L27/0688 ,  H01L27/14634 ,  H01L2224/24147 ,  H01L2224/8203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.

公开(公告)号：US20170025460A1

公开(公告)日：2017-01-26

申请号：US15284790

申请日：2016-10-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chiu-Jung Chen ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Volume Chien ,  Yung-Lung Hsu ,  Yun-Wei Cheng

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L2224/48463

Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

Abstract translation: 公开了半导体图像传感器装置的制造方法。 该方法包括提供具有像素区域，外围区域和接合焊盘区域的基板。 基板还具有与第一侧相对的第一侧和第二侧。 像素区域包含辐射感测区域。 该方法还包括在焊盘区域中形成接合焊盘; 以及至少在所述像素区域中，在形成所述焊盘之后，在所述衬底的所述第二侧上形成阻光结构。

公开(公告)号：US09553118B2

公开(公告)日：2017-01-24

申请号：US14307781

申请日：2014-06-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yun-Wei Cheng ,  Chiu-Jung Chen ,  Volume Chien ,  Kuo-Cheng Lee ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 缓冲层设置在衬底的第二侧上。 多个元件设置在缓冲层上。 元件和缓冲层具有不同的材料组成。 多个遮光结构分别设置在多个元件上。 辐射感测区域分别与由阻光结构，元件和缓冲层限定的多个开口对准。

公开(公告)号：US09543353B2

公开(公告)日：2017-01-10

申请号：US15168816

申请日：2016-05-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yun-Wei Cheng ,  Chiu-Jung Chen ,  Volume Chien ,  Kuo-Cheng Lee ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L27/14685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 多个遮光结构设置在基板的第二侧上。 钝化层涂覆在每个遮光结构的顶表面和侧壁上。 多个间隔物设置在涂覆在遮光结构的侧壁上的钝化层的部分上。

公开(公告)号：US09478578B2

公开(公告)日：2016-10-25

申请号：US14923148

申请日：2015-10-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Cherng Jeng ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Volume Chien ,  Yen-Hsung Ho ,  Allen Tseng

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14636 ,  H01L27/146 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: An embodiment semiconductor device includes a substrate such as a silicon or silicon-containing film, a pixel array supported by the substrate, and a metal stress release feature arranged around a periphery of the pixel array. The metal stress release feature may be formed from metal strips or discrete metal elements. The metal stress release feature may be arranged in a stress release pattern that uses a single line or a plurality of lines. The metal stress release pattern may also use metal corner elements at ends of the lines.

公开(公告)号：US20160276400A1

公开(公告)日：2016-09-22

申请号：US15168816

申请日：2016-05-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yun-Wei Cheng ,  Chiu-Jung Chen ,  Volume Chien ,  Kuo-Cheng Lee ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L27/14685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.

公开(公告)号：US09293490B2

公开(公告)日：2016-03-22

申请号：US14213542

申请日：2014-03-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Volume Chien ,  Yu-Heng Cheng ,  Huan-En Lin ,  Chi-Cherng Jeng ,  Fu-Tsun Tsai

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An integrated circuit structure includes a semiconductor substrate, an image sensor extending from a front surface of the semiconductor substrate into the semiconductor substrate, and an isolation structure extending from a back surface of the semiconductor substrate into the semiconductor substrate, wherein the isolation structure includes an air-gap therein. An air-gap sealing layer is on a backside of the semiconductor substrate. The air-gap sealing layer seals the air-gap, wherein the air-gap sealing layer includes a portion exposed to the air-gap.

Abstract translation: 集成电路结构包括半导体衬底，从半导体衬底的前表面延伸到半导体衬底中的图像传感器以及从半导体衬底的背表面延伸到半导体衬底中的隔离结构，其中隔离结构包括： 气隙在其中。 气隙密封层位于半导体衬底的背面。 气隙密封层密封气隙，其中气隙密封层包括暴露于气隙的部分。

公开(公告)号：US20160043129A1

公开(公告)日：2016-02-11

申请号：US14923148

申请日：2015-10-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chi-Cherng Jeng ,  Chun-Hao Chou ,  Tsung-Han Tsai ,  Kuo-Cheng Lee ,  Volume Chien ,  Yen-Hsung Ho ,  Allen Tseng

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L27/146 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: An embodiment semiconductor device includes a substrate such as a silicon or silicon-containing film, a pixel array supported by the substrate, and a metal stress release feature arranged around a periphery of the pixel array. The metal stress release feature may be formed from metal strips or discrete metal elements. The metal stress release feature may be arranged in a stress release pattern that uses a single line or a plurality of lines. The metal stress release pattern may also use metal corner elements at ends of the lines.

Abstract translation: 一种实施方案的半导体器件包括诸如硅或含硅膜的衬底，由衬底支撑的像素阵列以及围绕像素阵列周围布置的金属应力释放特征。 金属应力释放特征可以由金属条或离散金属元件形成。 金属应力释放特征可以布置在使用单线或多条线的应力释放模式中。 金属应力释放模式也可以在线的端部使用金属角元件。

公开(公告)号：US20150372033A1

公开(公告)日：2015-12-24

申请号：US14307781

申请日：2014-06-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yun-Wei Cheng ,  Chen Chiu-Jung ,  Volume Chien ,  Kuo-Cheng Lee ,  Yung-Lung Hsu ,  Chen Hsin-Chi

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A buffer layer is disposed over the second side of the substrate. A plurality of elements is disposed over the buffer layer. The elements and the buffer layer have different material compositions. A plurality of light-blocking structures is disposed over the plurality of elements, respectively. The radiation-sensing regions are respectively aligned with a plurality of openings defined by the light-blocking structures, the elements, and the buffer layer.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 缓冲层设置在衬底的第二侧上。 多个元件设置在缓冲层上。 元件和缓冲层具有不同的材料组成。 多个遮光结构分别设置在多个元件上。 辐射感测区域分别与由阻光结构，元件和缓冲层限定的多个开口对准。

公开(公告)号：US20150311247A1

公开(公告)日：2015-10-29

申请号：US14261472

申请日：2014-04-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chiu-Jung Chen ,  Yun-Wei Cheng ,  Volume Chien ,  Kuo-Cheng Lee ,  Chun-Hao Chou ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L2224/48463

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 辐射感测区域被多个间隙隔开。 多个辐射阻挡结构设置在基板的第二侧上。 每个辐射阻挡结构与相应的一个间隙对准。 多个滤色器设置在辐射阻挡结构之间。