公开(公告)号：US20180314145A1

公开(公告)日：2018-11-01

申请号：US15883234

申请日：2018-01-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Louis CHANG ,  Jen-Hao YEH ,  Tzung-Chi FU ,  Bo-Tsun LIU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F1/24 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/24 ,  G03F7/70025 ,  G03F7/70033 ,  H01L21/0275 ,  H05G2/00

Abstract: A method and system for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.

公开(公告)号：US20240377764A1

公开(公告)日：2024-11-14

申请号：US18781721

申请日：2024-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu TU ,  Chieh HSIEH ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/00 ,  H05G2/00

Abstract: An extreme ultraviolet (EUV) photolithography system detects debris travelling from an EUV generation chamber to a scanner. The photolithography system includes a detection light source and a sensor. The detection light source outputs a detection light across a path of travel of debris particles from the EUV generation chamber. The sensor senses debris particles by detecting interaction of the debris particles with the detection light.

公开(公告)号：US20240369937A1

公开(公告)日：2024-11-07

申请号：US18773322

申请日：2024-07-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Shang-Chieh CHIEN ,  Sheng-Kang YU ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/00 ,  G06N20/00

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

公开(公告)号：US20240365460A1

公开(公告)日：2024-10-31

申请号：US18769896

申请日：2024-07-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kuang SUN ,  Ming-Hsun TSAI ,  Wei-Shin CHENG ,  Cheng-Hao LAI ,  Hsin-Feng CHEN ,  Chiao-Hua CHENG ,  Cheng-Hsuan WU ,  Yu-Fa LO ,  Jou-Hsuan LU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: H05G2/00 ,  G03F7/00 ,  G05D23/19

CPC classification number: H05G2/006 ,  G03F7/70033 ,  G05D23/19

Abstract: The present disclosure is directed to a modularized vessel droplet generator assembly (MGDVA) including a droplet generator assembly (DGA). Under a normal operation, the liquid fuel moves along an operation pathway extending through the DGA to eject or discharge the liquid fuel (e.g., liquid tin) from a nozzle of the DGA into a vacuum chamber. The liquid fuel in the vacuum chamber is then exposed to a laser generating an extreme ultra-violet (EUV) light. Under a service operation, the operation pathway is closed and a service pathway extending through the DGA is opened. A gas is introduced into the service pathway forming a gas-liquid interface between the gas and the liquid fuel. The gas-liquid interface is driven to an isolation valve directly adjacent to the DGA. In other words, the gas pushes back the liquid fuel to the isolation valve. Once the gas-liquid interface reaches the isolation valve, the isolation valve is closed isolating the DGA from the liquid fuel.

公开(公告)号：US20240004304A1

公开(公告)日：2024-01-04

申请号：US17855357

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng Hung TSAI ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Heng-Hsin LIU ,  Li-Jui CHEN

IPC: G03F7/20

CPC classification number: G03F7/70175 ,  G03F7/70033

Abstract: Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.

公开(公告)号：US20230375944A1

公开(公告)日：2023-11-23

申请号：US17750151

申请日：2022-05-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shang-Chieh CHIEN ,  Tzu-Jung PAN ,  Wei-Shin CHENG ,  Cheng Hung TSAI ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20

CPC classification number: G03F7/7065 ,  G03F7/70033 ,  G03F7/7085 ,  G03F7/70025 ,  G03F7/70041

Abstract: An extreme ultraviolet (EUV) photolithography system includes a scanner that directs the EUV light onto an EUV reticle. The photolithography system includes one or more contamination reduction structures positioned within the scanner and configured to attract and decompose contaminant particles within the scanner. The contamination reduction structure includes a surface material that is highly electronegative.

公开(公告)号：US20220269182A1

公开(公告)日：2022-08-25

申请号：US17501848

申请日：2021-10-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Yu CHEN ,  Shang-Chieh CHIEN ,  Sheng-Kang YU ,  Li-Jui CHEN ,  Heng-Hsin LIU

IPC: G03F7/20 ,  G06N20/00

Abstract: An extreme ultraviolet (EUV) photolithography system generates EUV light by irradiating droplets with a laser. The system includes a collector and a plurality of vibration sensors coupled to the collector. The vibration sensors generate sensor signals indicative of shockwaves from laser pulses and impacts from debris. The system utilizes the sensor signals to improve the quality of EUV light generation.

公开(公告)号：US20210389678A1

公开(公告)日：2021-12-16

申请号：US16900735

申请日：2020-06-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ssu-Yu CHEN ,  Hsin-Feng CHEN ,  Chi YANG ,  Li-Jui CHEN

IPC: G03F7/20

Abstract: A system for controlling plasma position in extreme ultraviolet lithography light sources may include a vacuum chamber, a droplet generator to dispense a stream of droplets into the vacuum chamber, wherein the droplets are formed from a metal material, a laser light source to fire a plurality of laser pulses, including at least a first pulse and a second pulse, into the vacuum chamber, a sensor to detect an observed plasma position within the chamber, wherein the observed plasma position comprises a position at which the plurality of laser pulses vaporizes a droplet of the stream of droplets to produce a plasma that emits extreme ultraviolet radiation, and a first feedback loop connecting the sensor to the laser light source, wherein the first feedback loop adjusts a time delay between the first and second pulses to minimize a difference between the observed plasma position and a target plasma position.

公开(公告)号：US20210149317A1

公开(公告)日：2021-05-20

申请号：US16683432

申请日：2019-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Hsiang CHEN ,  Sheng-Kang YU ,  Shang-Chieh CHIEN ,  Li-Jui CHEN

IPC: G03F9/00 ,  G03F7/20

Abstract: A method of controlling a temperature of the semiconductor device includes operating an semiconductor apparatus; maintaining a temperature of a vessel of the semiconductor apparatus with a first cooling output by a cooling controller; heating the vessel for removing a material on the vessel; transferring a first signal, by a converter, to the cooling controller when heating the vessel; and reducing the first cooling output to a second cooling output by the cooling controller base on the first signal.

公开(公告)号：US20200379357A1

公开(公告)日：2020-12-03

申请号：US16995759

申请日：2020-08-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yu-Chih HUANG ,  Chi YANG ,  Che-Chang HSU ,  Li-Jui CHEN ,  Po-Chung CHENG

IPC: G03F7/20

Abstract: A method of controlling a feedback system with a data matching module of an extreme ultraviolet (EUV) radiation source is disclosed. The method includes obtaining a slit integrated energy (SLIE) sensor data and diffractive optical elements (DOE) data. The method performs a data match, by the data matching module, of a time difference of the SLIE sensor data and the DOE data to identify a mismatched set of the SLIE sensor data and the DOE data. The method also determines whether the time difference of the SLIE sensor data and the DOE data of the mismatched set is within an acceptable range. Based on the determination, the method automatically validates a configurable data of the mismatched set such that the SLIE sensor data of the mismatched set is valid for a reflectivity calculation.