公开(公告)号：US20090117681A1

公开(公告)日：2009-05-07

申请号：US12349026

申请日：2009-01-06

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L21/02 ,  H01L31/18

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size.In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.

摘要翻译： 本发明的目的是使元件占据的面积小型化，并将大量的元件集成在有限的区域中，使传感器元件具有更高的输出和更小的尺寸。 在本发明中，通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶体）的TFT的输出放大器电路来实现更高的输出和小型化 硅膜）用作塑料膜基材上的活性层，其能够抵抗诸如焊料回流工艺的安装过程中的温度。 根据本发明，可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US20080129396A1

公开(公告)日：2008-06-05

申请号：US11979995

申请日：2007-11-13

申请人： Kiyoshi Kato ,  Takanori Matsuzaki

发明人： Kiyoshi Kato ,  Takanori Matsuzaki

IPC分类号： H03L7/08

CPC分类号： H03L7/0995 ,  H03L7/093 ,  H03L7/107 ,  H03L7/18

摘要： An object is to provide a PLL having a wide operating range. Another object is to provide a semiconductor device or a wireless tag which has a wide operating range in a communication distance or temperature by incorporating such a PLL. The semiconductor device or the wireless tag includes a first divider circuit; a second divider circuit; a phase comparator circuit to which an output of the first divider circuit and an output of the second divider circuit are provided; a loop filter to which an output of the phase comparator circuit is supplied and in which a time constant is switched in accordance with an inputted signal; and a voltage controlled oscillator circuit to which an output of the loop filter is supplied and which supplies an output to the second divider circuit.

摘要翻译： 目的是提供具有宽工作范围的PLL。 另一个目的是提供一种半导体器件或无线标签，其通过结合这样的PLL在通信距离或温度中具有宽的工作范围。 半导体器件或无线标签包括第一除法电路; 第二分频电路; 相位比较器电路，第一分频电路的输出和第二除法电路的输出端提供给该相位比较器电路; 环路滤波器，根据输入的信号，提供相位比较器电路的输出并将时间常数切换到该环路滤波器; 以及压控振荡器电路，所述环路滤波器的输出端被提供给所述压控振荡器电路，并将输出提供给所述第二除法电路。

公开(公告)号：US20070267665A1

公开(公告)日：2007-11-22

申请号：US11829709

申请日：2007-07-27

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US07253391B2

公开(公告)日：2007-08-07

申请号：US10939998

申请日：2004-09-14

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： G01J1/44 ,  H03F3/08 ,  H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US20050167573A1

公开(公告)日：2005-08-04

申请号：US10952914

申请日：2004-09-30

申请人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

发明人： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC分类号： H01L27/146 ,  H01J40/14 ,  H01L21/82 ,  H01L27/14 ,  H01L31/00 ,  H01L31/10

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

摘要： The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.

摘要翻译： 本发明的目的是使元件占据的面积小型化，并将大量的元件集成在有限的区域中，使传感器元件具有更高的输出和更小的尺寸。 在本发明中，通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶体）的TFT的输出放大器电路来实现更高的输出和小型化 硅膜）用作塑料膜基材上的活性层，其能够抵抗诸如焊料回流工艺的安装过程中的温度。 根据本发明，可以获得能够抵抗弯曲应力的传感器元件。

公开(公告)号：US20050082463A1

公开(公告)日：2005-04-21

申请号：US10939998

申请日：2004-09-14

申请人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

发明人： Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki ,  Kazuo Nishi ,  Junya Maruyama

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/12 ,  H01L27/14692

摘要： In an optical sensor device employing an amorphous silicon photodiode, an external amplifier IC and the like are required due to low current capacity of the sensor element in order to improve the load driving capacity. It leads to increase in cost and mounting space of the optical sensor device. In addition, noise may easily superimpose since the photodiode and the amplifier IC are connected to each other over a printed circuit board. According to the invention, an amorphous silicon photodiode and an amplifier configured by a thin film transistor are formed integrally over a substrate so that the load driving capacity is improved while reducing cost and mounting space. Superimposing noise can be also reduced.

摘要翻译： 在采用非晶硅光电二极管的光学传感器装置中，由于传感器元件的低电流容量需要外部放大器IC等，以提高负载驱动能力。 这导致光学传感器装置的成本和安装空间的增加。 此外，由于光电二极管和放大器IC在印刷电路板上彼此连接，噪声可能容易地叠加。 根据本发明，非晶硅光电二极管和由薄膜晶体管构成的放大器一体地形成在基板上，从而提高负载驱动能力，同时降低成本和安装空间。 叠加噪音也可以减少。

公开(公告)号：US09190413B2

公开(公告)日：2015-11-17

申请号：US13019330

申请日：2011-02-02

申请人： Kiyoshi Kato ,  Shuhei Nagatsuka ,  Hiroki Inoue ,  Takanori Matsuzaki

发明人： Kiyoshi Kato ,  Shuhei Nagatsuka ,  Hiroki Inoue ,  Takanori Matsuzaki

IPC分类号： H01L27/105 ,  H01L27/115 ,  H01L27/12

CPC分类号： H01L27/108 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/1156 ,  H01L27/1225

摘要： A semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of times of writing. In the semiconductor device, a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is provided in matrix and a wiring (also called a bit line) for connecting one memory cell to another memory cell and a source or drain electrode of the first transistor are electrically connected to each other through a source or drain electrode of the second transistor. Accordingly, the number of wirings can be smaller than that in the case where the source or drain electrode of the first transistor and the source or drain electrode of the second transistor are connected to different wirings. Thus, the degree of integration of the semiconductor device can be increased.

摘要翻译： 具有新颖结构的半导体器件，其中即使在不提供电力的情况下也可以保持存储的数据，并且对写入次数没有限制。 在半导体装置中，以矩阵形式设置有各自包括第一晶体管，第二晶体管和电容器的多个存储单元，以及用于将一个存储单元连接到另一个存储单元的源（或称为位线） 第一晶体管的漏极电极通过第二晶体管的源极或漏极电极彼此电连接。 因此，布线数量可以比第一晶体管的源极或漏极以及第二晶体管的源极或漏极连接到不同的布线的情况下的布线数量小。 因此，可以提高半导体器件的集成度。

公开(公告)号：US08929161B2

公开(公告)日：2015-01-06

申请号：US13446661

申请日：2012-04-13

申请人： Takanori Matsuzaki

发明人： Takanori Matsuzaki

IPC分类号： G11C7/00

CPC分类号： G11C7/00 ,  G11C11/404 ,  G11C16/0416 ,  H01L27/1156 ,  H01L27/1225

摘要： A signal processing circuit including a nonvolatile storage circuit with a novel structure. The signal processing circuit includes a circuit that is supplied with a power supply voltage and has a first node to which a first high power supply potential is applied, and a nonvolatile storage circuit for holding a potential of the first node. The nonvolatile storage circuit includes a transistor whose channel is formed in an oxide semiconductor layer, and a second node that is brought into a floating state when the transistor is turned off. A second high power supply potential or a ground potential is input to a gate of the transistor. When the power supply voltage is not supplied, the ground potential is input to the gate of the transistor and the transistor is kept off. The second high power supply potential is higher than the first high power supply potential.

摘要翻译： 一种包括具有新颖结构的非易失性存储电路的信号处理电路。 信号处理电路包括被提供有电源电压并具有施加第一高电源电位的第一节点的电路和用于保持第一节点的电位的非易失性存储电路。 非易失性存储电路包括其沟道形成在氧化物半导体层中的晶体管，以及当晶体管截止时成为浮置状态的第二节点。 第二高电源电位或接地电位被输入到晶体管的栅极。 当不提供电源电压时，接地电位被输入到晶体管的栅极，并且晶体管保持截止。 第二个高电源电位高于第一个高电源电位。

公开(公告)号：US08842459B2

公开(公告)日：2014-09-23

申请号：US13489628

申请日：2012-06-06

申请人： Takanori Matsuzaki

发明人： Takanori Matsuzaki

IPC分类号： G11C5/06 ,  H01L27/108 ,  G11C11/402

CPC分类号： H01L27/108 ,  G11C11/4023 ,  H01L27/10894

摘要： A semiconductor device including a memory cell is provided. The memory cell comprises a transistor and a capacitor, and one of a resistor and a diode. A gate of the transistor is electrically connected to a word line, and one of a source and a drain of the transistor is electrically connected to a bit line. One terminal of the capacitor is electrically connected to the other of the source and the drain of the transistor, and the other terminal of the capacitor is electrically connected to a wiring. One terminal of one of the resistor and the diode is electrically connected to the other of the source and the drain of the transistor, and the other terminal of one of the resistor and the diode is electrically connected to the wiring.

摘要翻译： 提供了包括存储单元的半导体器件。 存储单元包括晶体管和电容器，以及电阻器和二极管之一。 晶体管的栅极电连接到字线，并且晶体管的源极和漏极中的一个电连接到位线。 电容器的一个端子电连接到晶体管的源极和漏极中的另一个，并且电容器的另一个端子电连接到布线。 电阻器和二极管中的一个的一个端子电连接到晶体管的源极和漏极中的另一个，并且电阻器和二极管中的一个的另一个端子电连接到布线。

公开(公告)号：US08649208B2

公开(公告)日：2014-02-11

申请号：US13473752

申请日：2012-05-17

申请人： Takanori Matsuzaki ,  Hiroki Inoue ,  Shuhei Nagatsuka

发明人： Takanori Matsuzaki ,  Hiroki Inoue ,  Shuhei Nagatsuka

IPC分类号： G11C11/24 ,  G11C5/06 ,  G11C7/00

CPC分类号： G11C11/404 ,  G11C16/0433 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/1255

摘要： A semiconductor device includes a nonvolatile memory cell including a writing transistor including an oxide semiconductor, a reading transistor including a semiconductor material different from that of the writing transistor, and a capacitor. Data is written to the memory cell by turning on the writing transistor so that a potential is supplied to a node where a source electrode of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected, and then turning off the writing transistor so that a predetermined potential is held in the node. Data is read out from the memory cell by supplying a precharge potential to a bit line, stopping the supply of the potential to the bit line, and determining whether the potential of the bit line is kept at the precharge potential or decreased.

摘要翻译： 半导体器件包括：非易失性存储单元，包括具有氧化物半导体的写入晶体管，包括与写入晶体管不同的半导体材料的读取晶体管，以及电容器。 通过接通写入晶体管将数据写入存储单元，使得电位被提供给写入晶体管的源电极，电容器的一个电极和读取晶体管的栅极电连接的节点，以及 然后关闭写入晶体管，使得在节点中保持预定的电位。 通过向位线提供预充电电位，停止对位线的电位供给，以及确定位线的电位是否保持在预充电电位还是减小，从存储单元读出数据。