公开(公告)号：US07582162B2

公开(公告)日：2009-09-01

申请号：US11600833

申请日：2006-11-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： C30B11/00 ,  C30B15/26 ,  H01L21/335

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US07560397B2

公开(公告)日：2009-07-14

申请号：US11709200

申请日：2007-02-22

申请人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

发明人： Shunpei Yamazaki ,  Hiroshi Shibata ,  Koichiro Tanaka ,  Masaaki Hiroki ,  Mai Akiba

IPC分类号： H01L21/26

CPC分类号： H01L21/02691 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675 ,  Y10S438/942

摘要： A method of manufacturing a semiconductor device is provided which uses a laser crystallization method capable of increasing substrate processing efficiency. An island-like semiconductor film including one or more islands is formed by patterning (sub-island). The sub-island is then irradiated with laser light to improve its crystallinity, and thereafter patterned to form an island. From pattern information of a sub-island, a laser light scanning path on a substrate is determined such that at least the sub-island is irradiated with laser light. In other words, the present invention runs laser light so as to obtain at least the minimum degree of crystallization of a portion that has to be crystallized, instead of irradiating the entire substrate with laser light.

摘要翻译： 提供一种制造半导体器件的方法，其使用能够提高衬底处理效率的激光结晶方法。 通过图案化（子岛）形成包括一个或多个岛的岛状半导体膜。 然后用激光照射子岛以改善其结晶度，然后图案化以形成岛。 从子岛的图案信息，确定基板上的激光扫描路径，使得至少使该子岛被激光照射。 换句话说，本发明运行激光，以便至少获得必须结晶的部分的最小结晶度，而不是用激光照射整个基板。

公开(公告)号：US07541618B2

公开(公告)日：2009-06-02

申请号：US11872402

申请日：2007-10-15

申请人： Hiroshi Shibata ,  Atsuo Isobe

发明人： Hiroshi Shibata ,  Atsuo Isobe

IPC分类号： H01L21/108

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1255

摘要： To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.

摘要翻译： 为了提供具有高开口率的高质量显示的液晶显示装置，同时确保足够的存储电容器（Cs），并且同时通过将电容器布线的负载（像素写入电流）分散在 及时有效减轻负荷。 扫描线形成在与栅电极不同的层上，使得电容器布线与信号线并联布置。 每个像素通过电介质连接到单独独立的电容器布线。 因此，可以避免由相邻像素的写入电流引起的电容器布线的电位变化，从而获得令人满意的显示图像。

公开(公告)号：US20090111893A1

公开(公告)日：2009-04-30

申请号：US11923064

申请日：2007-10-24

申请人： Yuzuru Kubohara ,  Hiroshi Shibata

发明人： Yuzuru Kubohara ,  Hiroshi Shibata

IPC分类号： A61K31/12 ,  A61P3/00

CPC分类号： A61K31/12 ,  Y10S514/866 ,  Y10S514/909

摘要： The compound represented by the general formula (I) is administered to a subject suffering from diabetes or obesity. In the formula (I), R1 and R2 independently represent an aliphatic hydrocarbon group having 1 to 10 carbon atoms or phenyl group, and arbitrary hydrogen atoms on the aliphatic hydrocarbon group and the phenyl group may be replaced by halogen, X1 represents halogen, and X2 represents hydrogen or halogen.

摘要翻译： 将由通式（I）表示的化合物给予患有糖尿病或肥胖症的受试者。 式（I）中，R 1和R 2独立地表示碳原子数1〜10的脂肪族烃基或苯基，脂肪族烃基和苯基的任意的氢原子可被卤素取代，X 1表示卤素， X2表示氢或卤素。

公开(公告)号：US20080035927A1

公开(公告)日：2008-02-14

申请号：US11878959

申请日：2007-07-30

申请人： Shunpei Yamazaki ,  Yu Yamazaki ,  Jun Koyama ,  Takayuki Ikeda ,  Hiroshi Shibata ,  Hidehito Kitakado ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Yu Yamazaki ,  Jun Koyama ,  Takayuki Ikeda ,  Hiroshi Shibata ,  Hidehito Kitakado ,  Takeshi Fukunaga

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  G02F1/136213 ,  H01L27/1255 ,  H01L29/78645

摘要： In a CMOS circuit formed on a substrate 100, a subordinate gate wiring line (a first wiring line) 102a and main gate wiring line (a second wiring line) 113a are provided in an n-channel TFT. The LDD regions 107a and 107b overlap the first wiring line 102a and not overlap the second wiring line 113a. Thus, applying a gate voltage to the first wiring line forms the GOLD structure, while not applying forms the LLD structure. In this way, the GOLD structure and the LLD structure can be used appropriately in accordance with the respective specifications required for the circuits.

摘要翻译： 在基板100上形成的CMOS电路中，在n沟道TFT中设置有​​从属栅极布线（第1布线）102a和主栅极布线（第2布线）113a。 LDD区域107a和107b与第一布线102a重叠，而不与第二布线113a重叠。 因此，向第一布线施加栅极电压形成GOLD结构，而不施加形成LLD结构。 以这种方式，可以根据电路所需的相应规格适当地使用GOLD结构和LLD结构。

公开(公告)号：US07282737B2

公开(公告)日：2007-10-16

申请号：US11321642

申请日：2005-12-30

申请人： Hiroshi Shibata ,  Atsuo Isobe

发明人： Hiroshi Shibata ,  Atsuo Isobe

IPC分类号： H01L29/04

CPC分类号： H01L27/1248 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2201/40 ,  H01L27/124 ,  H01L27/1255

摘要： To provide a liquid crystal display device having high quality display with a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a layer that is different from a gate electrode so that the capacitor wiring is arranged in parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of adjacent pixels can be avoided, thereby obtaining satisfactory display images.

摘要翻译： 为了提供具有高开口率的高质量显示的液晶显示装置，同时确保足够的存储电容器（Cs），并且同时通过将电容器布线的负载（像素写入电流）分散在 及时有效减轻负荷。 扫描线形成在与栅电极不同的层上，使得电容器布线与信号线并联布置。 每个像素通过电介质连接到单独独立的电容器布线。 因此，可以避免由相邻像素的写入电流引起的电容器布线的电位变化，从而获得令人满意的显示图像。

公开(公告)号：US07208766B2

公开(公告)日：2007-04-24

申请号：US11120175

申请日：2005-05-02

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroshi Shibata ,  Takeshi Fukunaga

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Hiroshi Shibata ,  Takeshi Fukunaga

IPC分类号： H01L29/04

CPC分类号： H01L27/124 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F1/1368 ,  G02F2001/136245 ,  H01L27/1237 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/78633 ,  H01L29/78645

摘要： Disclosed herein is a semiconductor device with high reliability which has TFT of adequate structure arranged according to the circuit performance required. The semiconductor has the driving circuit and the pixel portion on the same substrate. It is characterized in that the storage capacitance is formed between the first electrode formed on the same layer as the light blocking film and the second electrode formed from a semiconductor film of the same composition as the drain region, and the first base insulating film is removed at the part of the storage capacitance so that the second base insulating film is used as the dielectric of the storage capacitance. This structure provides a large storage capacitance in a small area.

摘要翻译： 本文公开了一种具有高可靠性的半导体器件，其具有根据所需电路性能布置的适当结构的TFT。 半导体在同一衬底上具有驱动电路和像素部分。 其特征在于，在与遮光膜形成在同一层上的第一电极和由与漏区相同组成的半导体膜形成的第二电极之间形成存储电容，并且去除第一基底绝缘膜 在存储电容的一部分处，使得第二基极绝缘膜用作存储电容的电介质。 该结构在小面积上提供了大的存储电容。

公开(公告)号：US07148507B2

公开(公告)日：2006-12-12

申请号：US11013539

申请日：2004-12-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： H01L21/84 ,  H01L31/36

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US07098086B2

公开(公告)日：2006-08-29

申请号：US10456503

申请日：2003-06-09

申请人： Hiroshi Shibata ,  Atsuo Isobe

发明人： Hiroshi Shibata ,  Atsuo Isobe

IPC分类号： H01L21/00

CPC分类号： H01L27/1255 ,  G02F1/133345 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L27/3276 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78633

摘要： To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images.

公开(公告)号：US07015505B2

公开(公告)日：2006-03-21

申请号：US10684936

申请日：2003-10-14

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.