公开(公告)号：US20130320446A1

公开(公告)日：2013-12-05

申请号：US13576933

申请日：2012-07-18

申请人： Wei Wang ,  Jing Wang ,  Lei Guo

发明人： Wei Wang ,  Jing Wang ,  Lei Guo

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/02521 ,  H01L21/0237 ,  H01L21/02488 ,  H01L29/045 ,  H01L29/7849 ,  H01L29/78603

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a rare earth oxide layer formed on the semiconductor substrate; a channel region formed on the rare earth oxide layer; and a source region and a drain region formed at both sides of the channel region respectively, in which a relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the channel region and/or the source region and the drain region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在半导体衬底上的稀土氧化物层; 形成在稀土氧化物层上的沟道区; 以及源极区域和漏极区域，分别形成在沟道区域的两侧，其中稀土氧化物层的晶格常数a与沟道区域的半导体材料的晶格常数b之间的关系和/或 源极区和漏极区是a =（n±c）b，其中n是整数，c是晶格常数的失配比，0

公开(公告)号：US08597486B2

公开(公告)日：2013-12-03

申请号：US12827789

申请日：2010-06-30

申请人： Changming Li ,  Wei Wang

发明人： Changming Li ,  Wei Wang

IPC分类号： B03C5/02

CPC分类号： B01L3/502784 ,  B01L2300/0816 ,  B01L2400/0415

摘要： The present invention refers to a droplet-based miniaturized device with on-demand droplet-trapping, -fusion, and -releasing. The device makes use of different electrical fields for directing droplets into microwells and releasing them from the same. In another aspect, the present invention refers to a system comprising such a microfluidic device and a method of operating it.

摘要翻译： 本发明涉及一种具有按需液滴捕获， - 注入和 - 释放的基于液滴的小型化装置。 该装置利用不同的电场将液滴引导到微孔中并将它们从其中释放出来。 另一方面，本发明涉及一种包含这种微流体装置的系统及其操作方法。

公开(公告)号：US20130302461A1

公开(公告)日：2013-11-14

申请号：US13468346

申请日：2012-05-10

申请人： AI-JUN YAN ,  Wei Wang ,  Wen-Zhi Xia

发明人： AI-JUN YAN ,  Wei Wang ,  Wen-Zhi Xia

IPC分类号： B29B17/00

CPC分类号： B65H54/62 ,  B65B27/06 ,  B65H2701/34

摘要： An automatic circle forming apparatus adapted for automatically forming OPP (O-phenylphenol) plastic circles includes a lower equipment cabinet, a first base plate, a transmitting module, an automatic separating module, an automatic tearing film module, a sucking waste mechanism, a displacement module, an automatic forming module and an upper equipment cabinet. The upper equipment cabinet is positioned on the first base plate for installing the transmitting module, the automatic separating module, the automatic tearing film module, the sucking waste mechanism, the displacement module and the automatic forming module therein. The upper equipment cabinet is equipped with a man-machine control interface which connects with and controls the transmitting module, the automatic separating module, the automatic tearing film module, the sucking waste mechanism, the displacement module and the automatic forming module for automatically forming the OPP plastic circles so as to improve operation efficiency and save a human cost.

摘要翻译： 适用于自动形成OPP（O-苯基苯酚）塑料圈的自动圆形成装置包括下部设备机柜，第一基板，发送模块，自动分离模块，自动撕裂膜模块，吸引废料机构，位移 模块，自动成型模块和上部设备柜。 上部设备机柜位于第一基板上，用于安装传动模块，自动分离模块，自动撕裂膜模块，吸吮机构，位移模块和自动成型模块。 上部设备机柜配有人机界面，与传送模块，自动分离模块，自动撕膜模块，吸吮机构，位移模块和自动成型模块相连接并控制，自动形成 OPP塑料圈，以提高运行效率，节省人力成本。

公开(公告)号：US08571908B2

公开(公告)日：2013-10-29

申请号：US13336845

申请日：2011-12-23

申请人： Hong Bo Li ,  Wei Wang ,  Hong Wei Ding ,  Jin Dong

发明人： Hong Bo Li ,  Wei Wang ,  Hong Wei Ding ,  Jin Dong

IPC分类号： G06Q10/00

CPC分类号： G06Q30/0202 ,  G06Q30/02

摘要： A method of and a system for allocating commodity shelves including obtaining shopping paths of customers, classifying the customers according to a predetermined standard, determining one or more shopping paths adopted by more customers in each kind of customers as frequent shopping path(s) of this kind of customers, calculating a see-buy rate of a commodity for each class of customers. The see-buy rate of a commodity for a class of customers refers to a probability to purchase the commodity for the class of customers. Calculating a shelf where each commodity in a set of commodities is located when the total expected benefits for set of commodities are maximized during a certain period of time. The total expected benefits include a sum of an expected benefit for the each commodity based on the see-buy rate and the frequency shopping path when each commodity is located in its own shelf.

摘要翻译： 一种用于分配商品货架的方法和系统，包括获取客户的购物路线，按照预定的标准对客户进行分类，确定每种客户中更多客户所采用的一个或多个购物路径，作为这些客户的频繁购物路径 客户的类型，计算每类客户的商品的购买率。 一类客户的商品的购买率是指为客户类购买商品的概率。 在一定时期内，当一套商品的总预期收益最大化时，计算一组商品中每种商品所在的货架。 总预期收益包括每个商品在每个商品位于其自己的货架中时，根据购买率和频率购物路径的预期收益总和。

公开(公告)号：US08565284B2

公开(公告)日：2013-10-22

申请号：US11838084

申请日：2007-08-13

申请人： Paul D. Ta ,  Wei Wang ,  Alvin Wang ,  Peter D. Bradshaw

发明人： Paul D. Ta ,  Wei Wang ,  Alvin Wang ,  Peter D. Bradshaw

IPC分类号： H04B1/00

CPC分类号： H04B15/04 ,  H04B2215/067

摘要： A spread spectrum clock signal generator and an accompanying method provide a spread spectrum clock signal of a reduced electromagnetic interference. The spread spectrum clock signal generator includes (a) a state machine, which maintains a current state of the spread spectrum clock signal generator, receives as input value a next state of the spread spectrum clock signal generator and generates a clock phase selection signal based on the current and next states; (b) a random number generator for generating the next state; and (c) a waveform generation circuit for generating a spread spectrum clock signal based on the clock phase selection signal.

摘要翻译： 扩频时钟信号发生器和伴随方法提供了降低的电磁干扰的扩频时钟信号。 扩展频谱时钟信号发生器包括：（a）保持扩频时钟信号发生器的当前状态的状态机接收扩频时钟信号发生器的下一个状态作为输入值，并产生基于 当前和下一个州; （b）用于产生下一状态的随机数发生器; 和（c）用于基于时钟相位选择信号产生扩频时钟信号的波形发生电路。

公开(公告)号：USD691726S1

公开(公告)日：2013-10-15

申请号：US29402534

申请日：2011-09-23

申请人： Jiuhe Jin ,  Wei Wang ,  Changbo Li

设计人： Jiuhe Jin ,  Wei Wang ,  Changbo Li

公开(公告)号：US20130260204A1

公开(公告)日：2013-10-03

申请号：US13432166

申请日：2012-03-28

申请人： Jie Xiao ,  Jiguang Zhang ,  Gordon L. Graff ,  Jun Liu ,  Wei Wang ,  Jianming Zheng ,  Wu Xu ,  Yuyan Shao ,  Zhenguo Yang

发明人： Jie Xiao ,  Jiguang Zhang ,  Gordon L. Graff ,  Jun Liu ,  Wei Wang ,  Jianming Zheng ,  Wu Xu ,  Yuyan Shao ,  Zhenguo Yang

IPC分类号： H01M4/58

CPC分类号： H01M8/188 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/58 ,  H01M4/5815 ,  H01M8/20 ,  H01M12/08 ,  H01M2300/0025 ,  H01M2300/0028 ,  Y02E60/122 ,  Y02E60/128 ,  Y02E60/528

摘要： Improved lithium-sulfur energy storage systems can utilizes LixSy as a component in an electrode of the system. For example, the energy storage system can include a first electrode current collector, a second electrode current collector, and an ion-permeable separator separating the first and second electrode current collectors. A second electrode is arranged between the second electrode current collector and the separator. A first electrode is arranged between the first electrode current collector and the separator and comprises a first condensed-phase fluid comprising LixSy. The energy storage system can be arranged such that the first electrode functions as a positive or a negative electrode.

摘要翻译： 改进的锂硫储能系统可以利用LixSy作为系统电极中的一个组件。 例如，能量存储系统可以包括第一电极集电器，第二电极集电器和分离第一和第二电极集电器的离子可渗透分离器。 第二电极布置在第二电极集电器和分离器之间。 第一电极布置在第一电极集电器和分离器之间，并且包括包含LixSy的第一冷凝相流体。 能量存储系统可以被布置成使得第一电极用作正极或负极。

公开(公告)号：US08546857B1

公开(公告)日：2013-10-01

申请号：US13576937

申请日：2012-07-16

申请人： Jing Wang ,  Lei Guo ,  Wei Wang

发明人： Jing Wang ,  Lei Guo ,  Wei Wang

IPC分类号： H01L29/08 ,  H01L29/417 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/66636 ,  H01L29/7848

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a source region and a drain region defined in the semiconductor substrate respectively, and a trench formed in the source region and/or the drain region, in which a rare earth oxide layer is formed in the trench; a source and/or a drain formed on the rare earth oxide layer; and a channel region formed between the source and the drain. A relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the source and/or the drain and/or the channel region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 限定在半导体衬底中的源极区和漏极区，以及在沟道中形成有稀土氧化物层的源极区和/或漏极区中形成的沟槽; 在稀土氧化物层上形成的源极和/或漏极; 以及形成在源极和漏极之间的沟道区域。 源极和/或漏极和/或沟道区的半导体材料的稀土氧化物层的晶格常数a与晶格常数b之间的关系为a =（n±c）b，其中n为 整数，c是晶格常数的失配比，0

公开(公告)号：US20130253208A1

公开(公告)日：2013-09-26

申请号：US13878662

申请日：2011-10-11

申请人： Min Lin ,  Hua Li ,  Wei Wang ,  Chijian He ,  Xiaoju Wu ,  Jizao Gao ,  Xichun She ,  Jun Long ,  Qingling Chen

发明人： Min Lin ,  Hua Li ,  Wei Wang ,  Chijian He ,  Xiaoju Wu ,  Jizao Gao ,  Xichun She ,  Jun Long ,  Qingling Chen

IPC分类号： B01J29/89 ,  C07D301/12

CPC分类号： B01J29/89 ,  B01J35/002 ,  B01J2229/32 ,  B01J2229/34 ,  B01J2229/42 ,  C07D301/12

摘要： The present invention provides a catalyst and the preparation process thereof and a process of epoxidising olefin using the catalyst. The catalyst contains a binder and a titanium silicate, the binder being an amorphous silica, the titanium silicate having a MFI structure, and the crystal grain of the titanium silicate having a hollow structure, with a radial length of 5-300 nm for the cavity portion of the hollow structure, wherein the adsorption capacity of benzene measured for the titanium silicate under the conditions of 25 degrees C., P/P0=0.10 and 1 h of adsorption time is at least 70 mg/g, and there is a hysteresis loop between the adsorption isotherm and the desorption isotherm for nitrogen adsorption by the molecular sieve at a low temperature; wherein based on the total amount of the catalyst, the content of the binder is 3-15 wt %, and the content of the titanium silicate is 85-97 wt %; and the catalyst has a crushing strength value of not less than 60 N/cm measured according to GB3635-1983 standard method. The catalyst according to the present invention has high strength, and shows high catalytic activity in the epoxidation of olefins.

摘要翻译： 本发明提供一种催化剂及其制备方法以及使用该催化剂使烯烃环氧化的方法。 催化剂含有粘合剂和钛硅酸盐，粘合剂是无定形二氧化硅，具有MFI结构的硅酸钛和具有中空结构的硅酸钛的晶粒，其中腔的径向长度为5-300nm 部分中空结构，其中在25℃，P / P0 = 0.10和1小时的吸附时间条件下测量的硅酸钛的苯的吸附能力为至少70mg / g，并且存在滞后 吸附等温线和分子筛在低温下氮吸附的解吸等温线之间的循环; 其中，基于催化剂的总量，粘合剂的含量为3〜15重量％，硅酸钛的含量为85〜97重量％。 催化剂的破碎强度值按照GB3635-1983标准方法测定，不小于60N / cm。 根据本发明的催化剂具有高强度，并且在烯烃的环氧化中显示出高的催化活性。

公开(公告)号：US20130240958A1

公开(公告)日：2013-09-19

申请号：US13521051

申请日：2012-05-29

申请人： Jing Wang ,  Lei Guo ,  Wei Wang

发明人： Jing Wang ,  Lei Guo ,  Wei Wang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/76283 ,  H01L29/7846

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; an active region formed in the semiconductor substrate, in which the active region comprises: a channel region, and a source region and a drain region formed on both sides of the channel region respectively; and a first isolation trench formed in the semiconductor substrate and on both sides of the active region, in which a first rare earth oxide layer is formed in each first isolation trench to produce a stress in the channel region in a channel length direction.

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括：半导体衬底; 形成在所述半导体衬底中的有源区，其中所述有源区包括：沟道区，以及分别形成在所述沟道区两侧的源区和漏区; 以及形成在所述半导体衬底中并且在所述有源区的两侧上形成的第一隔离沟槽，其中在每个第一隔离沟槽中形成第一稀土氧化物层，以在沟道长度方向上的沟道区域中产生应力。