公开(公告)号：US06838656B2

公开(公告)日：2005-01-04

申请号：US10734304

申请日：2003-12-15

申请人： Yasuhiro Okamoto

发明人： Yasuhiro Okamoto

IPC分类号： G01V8/10 ,  G06M7/00 ,  H01J40/14

CPC分类号： G01V8/10

摘要： A photoelectric sensor is disclosed that comprises a sensor unit having a casing. The casing includes one surface having a first display and a second display. The first display is structured and arranged to display a threshold value that may be set by an operator of the photoelectric sensor. The second display is structured and arranged to display the actual conditions sensed by said photoelectric sensor. The sensor also includes a selection device for selecting different operational values to display on the second display. The selection device can include a mechanism disposed on the casing for changing the different operational values on the second display. The selection device can also include an adjustment switch disposed on the casing. The adjustment switch allows the operator to adjust the threshold value shown on the first display while the second display shows at least one of the actual conditions sensed by the photoelectric sensor. The photoelectric sensor can be an integrated sensor or can include at least two parts, namely a sensor head and a main body unit. The sensor also can have a plurality of different display setting modes that can be shown on the displays and an operator may set these modes. These different modes include a power setting mode, a hold setting mode and a timer setting mode, each of which can have a plurality of displayable conditions.

摘要翻译： 公开了一种光电传感器，其包括具有壳体的传感器单元。 壳体包括具有第一显示器和第二显示器的一个表面。 第一显示器被构造和布置成显示可以由光电传感器的操作者设置的阈值。 第二显示器被构造和布置成显示由所述光电传感器感测的实际状况。 传感器还包括用于选择在第二显示器上显示的不同操作值的选择装置。 选择装置可以包括设置在壳体上用于改变第二显示器上的不同操作值的机构。 选择装置还可以包括设置在壳体上的调节开关。 调节开关允许操作者调整第一显示器上显示的阈值，而第二显示器显示由光电传感器感测的至少一个实际条件。 光电传感器可以是集成传感器，或者可以包括至少两个部分，即传感头和主体单元。 传感器还可以具有可以在显示器上显示的多种不同的显示设置模式，并且操作者可以设置这些模式。 这些不同的模式包括功率设定模式，保持设置模式和定时器设置模式，每个模式可以具有多个可显示条件。

公开(公告)号：US06646251B1

公开(公告)日：2003-11-11

申请号：US09617861

申请日：2000-07-17

申请人： Yasuhiro Okamoto

发明人： Yasuhiro Okamoto

IPC分类号： G06M700

CPC分类号： G01V8/12

摘要： A tolerance-level display portion 12 is provided in a casing 11 of a head 1 of a photoelectric switch. A light reception signal output from the head 1 is transmitted through a cable 31b of a main body 2. The casing 21 of the main body 2 contains a received light amount display portion 22, a tolerance-level display portion 24, adjust switches 28 and setting switches 29. The CPU in the main body 2 calculates a ratio of a light reception signal to a threshold value to obtain a tolerance level, and applies a control signal corresponding to the obtained tolerance level to a variable power supply circuit. The variable power supply circuit applies a variable voltage, which is dependent on the control signal, through a cable 31a to the head 1. The tolerance-level display portion 12 of the head 1 displays a tolerance level on the basis of the variable voltage by turning on the tolerance-level display LEDs 12a, 12b and 12c.

摘要翻译： 公差级显示部分12设置在光电开关的头部1的壳体11中。 从头1输出的光接收信号通过主体2的电缆31b传输。主体2的壳体21包含接收光量显示部分22，公差等级显示部分24，调节开关28和 设置开关29.主体2中的CPU计算光接收信号与阈值的比率以获得公差电平，并将与获得的公差电平相对应的控制信号施加到可变电源电路。 可变电源电路通过电缆31a向头部1施加取决于控制信号的可变电压。头1的公差等级显示部分12基于可变电压显示公差电平， 打开公差级显示LED 12a，12b和12c。

公开(公告)号：US5942384A

公开(公告)日：1999-08-24

申请号：US480946

申请日：1995-06-07

申请人： Tsutomu Arai ,  Koichi Kuno ,  Yasuhiro Okamoto ,  Shuzo Suga

发明人： Tsutomu Arai ,  Koichi Kuno ,  Yasuhiro Okamoto ,  Shuzo Suga

IPC分类号： G03C1/06 ,  G03C1/08 ,  G03C1/09 ,  G03C1/10 ,  G03C1/28 ,  G03C5/31

CPC分类号： G03C5/31 ,  G03C1/09 ,  G03C1/10 ,  G03C1/28 ,  G03C1/067 ,  G03C1/08

摘要： A silver halide photographic material is disclosed, comprising a support having thereon at least one light-sensitive silver halide emulsion layer, wherein at least 30 mol % of silver halide grains contained in the emulsion of the emulsion layer are silver chloride, the emulsion contains not more than 1.times.10.sup.-6 mol per mol of silver of a rhodium compound and/or not more than 1.times.10.sup.-5 mol per mol of silver of an iridium compound, and the silver halide grains have been selenium-sensitized. There is also disclosed a method for processing the silver halide photographic material.

摘要翻译： 公开了一种卤化银照相材料，其包括其上具有至少一种感光卤化银乳剂层的载体，其中乳液层乳液中所含的至少30摩尔％的卤化银颗粒是氯化银，乳液不含 每摩尔铑化合物银含量超过1×10-6摩尔，和/或不大于1×10-5摩尔/铱化合物银，并且卤化银颗粒已被硒敏化。 还公开了一种用于处理卤化银照相材料的方法。

公开(公告)号：US08928038B2

公开(公告)日：2015-01-06

申请号：US14117763

申请日：2012-05-15

申请人： Yasuhiro Okamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota

发明人： Yasuhiro Okamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Takashi Inoue ,  Kazuki Ota

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/4236 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7786

摘要： A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In1-zAlzN (0≦z≦1), a channel layer having a composition of: AlxGa1-xN (0≦x≦1) or InyGa1-yN (0≦y≦1). Or GaN provided on and lattice-matched to the lower barrier layer, a source electrode and a drain electrode having ohmic contact to an upper part of the semiconductor layers, disposed spaced to each other, and a gate electrode arranged via a gate insulating film in a region lying between the source electrode and the drain electrode.

摘要翻译： 场效应晶体管包括衬底和设置在衬底上的半导体层，其中半导体层包括设置在衬底上的下阻挡层，生长Ga面，晶格弛豫并具有组成In 1-z Al z N（0＆nl; z＆nl E; 1），具有以下组成的沟道层：Al x Ga 1-x N（0＆amp; nlE; x＆nlE; 1）或In y Ga 1-y N（0＆nlE; y＆nlE; 1）。 或提供在栅极绝缘膜上并与栅极绝缘膜配置的栅电极，栅极配置在栅极绝缘膜上，栅电极配置在栅极绝缘膜上， 位于源电极和漏电极之间的区域。

公开(公告)号：US08920924B2

公开(公告)日：2014-12-30

申请号：US13262788

申请日：2010-04-05

申请人： Atsushi Muramatsu ,  Kiyoshi Kanie ,  Atsuki Terabe ,  Yasuhiro Okamoto ,  Hideto Mizutani ,  Satoru Sueda ,  Hirofumi Takahashi

发明人： Atsushi Muramatsu ,  Kiyoshi Kanie ,  Atsuki Terabe ,  Yasuhiro Okamoto ,  Hideto Mizutani ,  Satoru Sueda ,  Hirofumi Takahashi

IPC分类号： B32B5/16 ,  C01G33/00 ,  H01L41/187 ,  C04B35/495 ,  H01L41/317

CPC分类号： H01L41/1873 ,  C01D1/02 ,  C01G33/006 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/03 ,  C01P2004/41 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2004/62 ,  C04B35/495 ,  C04B2235/3201 ,  C04B2235/3255 ,  C04B2235/52 ,  H01L41/317 ,  Y10T428/2982

摘要： Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of particles of the fine particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. Specifically disclosed are a method of producing particulate sodium-potassium niobate represented by the formula (1): NaxK(1-x)NbO3 (1), the method including four specific steps, wherein a high-concentration alkaline solution containing Na+ ion and K+ ion is used as an alkaline solution; and particulate sodium-potassium niobate having a controlled shape and size.

摘要翻译： 公开了一种在液相体系中生产细粒状碱金属铌酸盐的方法，其中可以控制细粒状碱金属铌酸盐颗粒的尺寸和形状; 和具有受控形状和尺寸的细颗粒碱金属铌酸盐。 具体公开的是由式（1）表示的颗粒状铌酸钾钠盐的方法：NaxK（1-x）NbO 3（1），该方法包括四个具体步骤，其中含有Na +离子和K + 离子用作碱性溶液; 和具有受控形状和尺寸的铌酸钾钠颗粒。

公开(公告)号：US08659055B2

公开(公告)日：2014-02-25

申请号：US13497557

申请日：2010-06-16

申请人： Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yuji Ando

发明人： Yasuhiro Okamoto ,  Kazuki Ota ,  Takashi Inoue ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yuji Ando

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/1054 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/267 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66734

摘要： Provided is a semiconductor device capable of suppressing an occurrence of a punch-through phenomenon.A semiconductor device includes a substrate 1, a first n-type semiconductor layer 2, a p-type semiconductor layer 3, a second n-type semiconductor layer 4, a drain electrode 13, a source electrode 11, a gate electrode 12, and a gate insulation film 21, wherein the first n-type semiconductor layer 2, the p-type semiconductor layer 3, and the second n-type semiconductor layer 4 are laminated on the substrate 1 in this order. The drain electrode 13 is in ohmic-contact with the first n-type semiconductor layer 2. The source electrode 11 is in ohmic-contact with the second n-type semiconductor layer 4. An opening portion to be filled or a notched portion that extends from an upper surface of the second n-type semiconductor layer 4 to an upper part of the first n-type semiconductor layer 2 is formed at a part of the p-type semiconductor layer 3 and a part of the second n-type semiconductor layer 4. The gate electrode 12 is in contact with an upper surface of the first n-type semiconductor layer 2, side surfaces of the p-type semiconductor layer 3, and side surfaces of the second n-type semiconductor layer 4 at inner surfaces of the opening portion to be filled or a surface of the notched portion via the gate insulation film 21. The p-type semiconductor layer 3 has a positive polarization charge at a first n-type semiconductor layer 2 side in a state where a voltage is applied to none of the electrodes.

摘要翻译： 提供能够抑制穿通现象发生的半导体装置。 半导体器件包括衬底1，第一n型半导体层2，p型半导体层3，第二n型半导体层4，漏极13，源电极11，栅电极12和 栅极绝缘膜21，其中第一n型半导体层2，p型半导体层3和第二n型半导体层4依次层压在基板1上。 漏电极13与第一n型半导体层2欧姆接触。源电极11与第二n型半导体层4欧姆接触。要填充的开口部分或延伸的缺口部分 从第二n型半导体层4的上表面到第一n型半导体层2的上部形成在p型半导体层3的一部分上，第二n型半导体层的一部分 栅电极12与第一n型半导体层2的上表面，p型半导体层3的侧表面和第二n型半导体层4的内表面的侧表面接触 待填充的开口部分或经由栅极绝缘膜21的切口部分的表面。在施加电压的状态下，p型半导体层3在第一n型半导体层2侧具有正极化电荷 没有电极。

公开(公告)号：US08552471B2

公开(公告)日：2013-10-08

申请号：US13139789

申请日：2009-12-11

申请人： Yasuhiro Okamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Kazuki Ota ,  Takashi Inoue ,  Hironobu Miyamoto ,  Kazuomi Endo

发明人： Yasuhiro Okamoto ,  Yuji Ando ,  Tatsuo Nakayama ,  Kazuki Ota ,  Takashi Inoue ,  Hironobu Miyamoto ,  Kazuomi Endo

IPC分类号： H01L29/66

CPC分类号： H01L29/402 ,  H01L29/0619 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/7787

摘要： There is provided a semiconductor apparatus capable of achieving both a reverse blocking characteristic and a low on-resistance. The semiconductor apparatus includes a first semiconductor layer including a channel layer, a source electrode formed on the first semiconductor layer, a drain electrode formed at a distance from the source electrode on the first semiconductor layer, and a gate electrode formed between the source electrode and the drain electrode on the first semiconductor layer. The drain electrode includes a first drain region where reverse current between the first semiconductor layer and the first drain region is blocked, and a second drain region formed at a greater distance from the gate electrode than the first drain region, where a resistance between the first semiconductor layer and the second drain region is lower than a resistance between the first semiconductor layer and the first drain region.

摘要翻译： 提供了能够实现反向阻挡特性和低导通电阻的半导体装置。 半导体装置包括：第一半导体层，包括沟道层，形成在第一半导体层上的源电极，在第一半导体层上与源极间隔一定距离处形成的漏电极，以及形成在源电极和 第一半导体层上的漏电极。 漏电极包括第一漏极区，其中第一半导体层和第一漏极区之间的反向电流被阻挡，以及形成在比栅极电极比第一漏极区更远的距离处的第二漏区， 半导体层和第二漏极区域比第一半导体层和第一漏极区域之间的电阻低。

公开(公告)号：US20130105811A1

公开(公告)日：2013-05-02

申请号：US13637555

申请日：2010-12-15

申请人： Yuji Ando ,  Takashi Inoue ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Kazuomi Endo

发明人： Yuji Ando ,  Takashi Inoue ,  Kazuki Ota ,  Yasuhiro Okamoto ,  Tatsuo Nakayama ,  Kazuomi Endo

IPC分类号： H01L29/78 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L29/78 ,  H01L21/8252 ,  H01L29/2003 ,  H01L29/4232 ,  H01L29/66477 ,  H01L29/7785 ,  H01L29/7787

摘要： The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer 112, a channel layer 113, a barrier layer 114, and a spacer layer 115 is formed of a group-III nitride semiconductor, and each of the upper surfaces thereof is a group-III atomic plane that is perpendicular to a (0001) crystal axis. The lattice-relaxed buffer layer 112, the channel layer 113 having a compressive strain, and the barrier layer 114 having a tensile strain, and the spacer layer 115 having a compressive strain are laminated on a substrate 100 in this order. The gate insulating film 14 is arranged on the spacer layer 115. The gate electrode 15 is arranged on the gate insulating film 14. The source electrode 161 and the drain electrode 162 are electrically connected to the channel layer 113 directly or via another component.

摘要翻译： 本发明提供了能够实现高阈值电压和低通态电阻两者的场效应晶体管，其制造方法和电子器件。 在场效应晶体管中，由III族氮化物半导体形成缓冲层112，沟道层113，势垒层114和间隔层115，其上表面分别为III族 原子平面垂直于（0001）晶轴。 栅格弛豫缓冲层112，具有压缩应变的沟道层113和具有拉伸应变的阻挡层114以及具有压缩应变的间隔层115以此顺序层压在基板100上。 栅极绝缘膜14布置在间隔层115上。栅电极15布置在栅极绝缘膜14上。源极161和漏极162直接或经由另一个部件电连接到沟道层113。

公开(公告)号：US08395237B2

公开(公告)日：2013-03-12

申请号：US13124872

申请日：2009-10-16

申请人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

发明人： Yuji Ando ,  Hironobu Miyamoto ,  Tatsuo Nakayama ,  Yasuhiro Okamoto ,  Takashi Inoue ,  Kazuki Ota

IPC分类号： H01L29/66 ,  H01L29/737

CPC分类号： H01L29/7371 ,  H01L29/045 ,  H01L29/2003

摘要： A bipolar transistor includes: a substrate; a collector and a base layer with a p-conductive-type, an emitter layer with an n-conductive-type. The collector layer is formed above the substrate and includes a first nitride semiconductor. The base layer with the p-conductive-type is formed on the collector layer and includes a second nit ride semiconductor. The emitter layer with the n-conductive-type is formed on the base layer and includes a third nitride semiconductor. The collector layer, the base layer and the emitter layer are formed so that crystal growing directions with respect to a surface of the substrate are in parallel to a [0001] direction of the substrate. The first nitride semiconductor includes: InycAlxcGa1-xc-ycN (0≦xc≦1, 0≦yc≦1, 0

摘要翻译： 双极晶体管包括：基板; 具有p导电型的集电极和基极层，具有n导电型的发射极层。 集电极层形成在衬底上方并且包括第一氮化物半导体。 具有p型导电型的基底层形成在集电极层上，并且包括第二耐磨半导体。 具有n导电型的发射极层形成在基极层上并且包括第三氮化物半导体。 形成集电体层，基极层和发射极层，使得相对于基板的表面的晶体生长方向与基板的[0001]方向平行。 第一氮化物半导体包括：InycAlxcGa1-xc-ycN（0＆nlE; xc＆nlE; 1,0＆amp; nlE; yc＆nlE; 1,0

公开(公告)号：US08394082B2

公开(公告)日：2013-03-12

申请号：US12777336

申请日：2010-05-11

申请人： Yasuhiro Okamoto ,  Kazuo Banju

发明人： Yasuhiro Okamoto ,  Kazuo Banju

IPC分类号： A61B19/00

CPC分类号： A61B1/0052 ,  A61B34/70 ,  A61B34/71 ,  A61B2017/003 ,  A61B2017/0034 ,  A61B2017/2929 ,  A61B2034/742

摘要： A medical system includes an insertion slave apparatus to be inserted into a body, a treatment slave apparatus to be inserted into the body together with the insertion slave apparatus to treat an object, an insertion master portion having a similar figure to the insertion slave apparatus and including a movable portion, wherein the insertion slave apparatus is to perform following actuation according to operation input to the insertion master portion, a treatment master portion to be operated by an operator, wherein the treatment slave apparatus is to perform following actuation according to operation input to the treatment master portion, and a connecting portion coupling the insertion master portion and the treatment master portion to each other, wherein the movable portion is to be moved through the connecting portion to operate the insertion master portion by holding and operating the treatment master portion.

摘要翻译： 一种医疗系统包括插入到主体中的插入从属装置，与插入从属装置一起插入到身体中的待处理从属装置以对待对象，具有与插入从属装置类似的插入主体部分，以及 包括可动部，其中，所述插入从属装置根据对所述插入主部的输入的操作进行跟随动作，所述处理主部由操作者操作，所述处理从属装置根据操作输入进行跟随动作 以及将插入主体部和处理主体部彼此联接的连接部，其中，可移动部通过连接部移动，以通过保持和操作处理主体部来操作插入主体部 。