AUTOMATIC OPTICAL POWER CONTROL METHOD FOR OLT IN PON
    61.
    发明申请
    AUTOMATIC OPTICAL POWER CONTROL METHOD FOR OLT IN PON 有权
    PON中PON的自动光功率控制方法

    公开(公告)号:US20100008667A1

    公开(公告)日:2010-01-14

    申请号:US12443416

    申请日:2007-09-21

    CPC classification number: H04Q11/0067 H04Q2011/0083

    Abstract: Provided is an automatic optical power control method for an optical line terminal (OLT) of a passive optical network (PON). The automatic optical power control method includes at the OLT, measuring an allowable range of the optical power allowing a normal network operation on the PON, at the OLT, setting an optimum optical signal level within the measured allowable range of the optical power, and at the OLT, adjusting a power level of a transmitter to the set optimum optical signal level. Accordingly, an appropriate power level can be selected depending on an optical distribution network (ODN) structure to drive the transmitter. Also, when the entire optical network units are deactivated, a laser of the transmitter is turned off to thereby minimize unnecessary power consumption at the OLT.

    Abstract translation: 提供了一种用于无源光网络(PON)的光线路终端(OLT)的自动光功率控制方法。 自动光功率控制方法包括在OLT处,在OLT处测量允许PON上的正常网络操作的光功率的允许范围,在所测量的光功率允许范围内设置最佳光信号电平,并且在 OLT将发射机的功率电平调整到设定的最佳光信号电平。 因此,可以根据用于驱动发射机的光分配网络(ODN)结构来选择适当的功率电平。 此外,当整个光网络单元被去激活时,发射机的激光被关闭,从而最小化OLT处的不必要的功率消耗。

    Nonvolatile memory device and method of fabricating the same
    63.
    发明授权
    Nonvolatile memory device and method of fabricating the same 失效
    非易失性存储器件及其制造方法

    公开(公告)号:US07642593B2

    公开(公告)日:2010-01-05

    申请号:US11698658

    申请日:2007-01-26

    CPC classification number: H01L29/42336 H01L27/115 H01L27/11521 H01L29/7881

    Abstract: a nonvolatile memory device Includes an active region defined in a semiconductor substrate and a control gate electrode crossing over the active region. A gate insulating layer is interposed between the control gate electrode and the active reigon. A floating gate is formed in the active region to penetrate the control gate electrode and extend to a predetermined depth into the semiconductor substrate. A tunnel insulating layer is successively interposed between the control gate electrode and the floating gate, and between the semiconductor substrate and the floating gate. The floating gate may be formed after a trench is formed by sequentially etching a control gate conductive layer and the semiconductor substrate, and a tunnel insulating layer is formed on the trench and sidewalls of the control gate conductive layer. The floating gate is formed in the trench to extend into a predetermined depth into the semiconductor substrate.

    Abstract translation: 非易失性存储器件包括限定在半导体衬底中的有源区和跨越有源区的控制栅电极。 栅极绝缘层介于控制栅极电极和活性电极之间。 在有源区中形成浮栅,以穿透控制栅电极并延伸到预定深度进入半导体衬底。 隧道绝缘层被连续插入在控制栅电极和浮栅之间以及半导体衬底和浮栅之间。 可以在通过顺序蚀刻控制栅极导电层和半导体衬底形成沟槽之后形成浮置栅极,并且在控制栅极导电层的沟槽和侧壁上形成隧道绝缘层。 浮动栅极形成在沟槽中,以延伸到预定深度进入半导体衬底。

    Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate
    64.
    发明授权
    Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate 失效
    具有选择栅电极和形成在浮栅上的控制栅电极的非易失性存储器件

    公开(公告)号:US07492002B2

    公开(公告)日:2009-02-17

    申请号:US11323355

    申请日:2005-12-30

    Abstract: A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.

    Abstract translation: 非易失性存储器件包括形成在衬底上的栅极绝缘层之间的浮置栅极,形成在浮置栅极上的隧道绝缘层,通过栅极绝缘层引入电荷的选择栅极电极和控制栅电极 通过隧道绝缘层引起电荷隧穿。 选择栅电极与控制栅电极绝缘。 根据非易失性存储器件,在浮动栅极上形成选择栅电极和控制栅电极,从而向相应的栅电极施加电压以写入和擦除数据。

    Data Processing Method for Application Layer
    65.
    发明申请
    Data Processing Method for Application Layer 失效
    应用层数据处理方法

    公开(公告)号:US20090007156A1

    公开(公告)日:2009-01-01

    申请号:US10594616

    申请日:2005-03-31

    Abstract: The present invention discloses a data processing method for application layer based on a living network control protocol. The data processing method for application layer which is based on a predetermined protocol composed of at least a lower layer and an application layer includes the steps of: receiving a predetermined primitive from an upper application software; generating a communication cycle identifier (CycleID) according to the primitive; generating a service description according to the primitive and the communication cycle identifier (CycleID); composing an application layer protocol data unit (APDU) including the primitive; and transmitting the APDU to the lower layer.

    Abstract translation: 本发明公开了一种基于生活网络控制协议的应用层数据处理方法。 基于由至少下层和应用层构成的预定协议的应用层的数据处理方法包括以下步骤:从上层应用软件接收预定原语; 根据原语生成通信周期标识符(CycleID); 根据原语和通信周期标识符(CycleID)生成服务描述; 组成包括原语的应用层协议数据单元(APDU); 并将APDU发送到下层。

    Network electric device
    66.
    发明授权
    Network electric device 失效
    网络电器

    公开(公告)号:US07454517B2

    公开(公告)日:2008-11-18

    申请号:US10558435

    申请日:2004-05-14

    Abstract: The present invention discloses a home network system using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least one electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, wherein the protocol includes an application layer, a network layer, a data link layer and a physical layer, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code form network security when accessing the dependent transmission medium; and wherein an application layer protocol data unit (APDU) is transmitted between the application layer and the network layer, a network layer protocol data unit (NPDU) is transmitted between the network layer and the data link layer and the between the network layer and the home code control sub-layer, a home code control sub-layer protocol data unit (HCNPDU) is transmitted between the home code control sub-layer and the data link layer, and a data frame unit is transmitted between the data link layer and the physical layer.

    Abstract translation: 本发明公开了一种使用生活网络控制协议的家庭网络系统。 家庭网络系统包括:基于预定协议的网络; 连接到网络的至少一个电气设备; 以及网络管理器,其连接到所述网络,用于控制和/或监视所述电子设备,其中所述协议包括应用层,网络层,数据链路层和物理层,其中所述物理层还包括用于 提供与依赖传输介质的接口,并且所述网络层还包括用于在访问所述从属传输介质时管理归属代码形式的网络安全性的归属代码控制子层; 并且其中应用层协议数据单元(APDU)在应用层与网络层之间传输,网络层协议数据单元(NPDU)在网络层与数据链路层之间以及网络层与网络层之间传输 归属码控制子层,归属码控制子层协议数据单元(HCNPDU)在归属码控制子层和数据链路层之间传输,数据帧单元在数据链路层和 物理层。

    Split gate type nonvolatile memory device
    67.
    发明授权
    Split gate type nonvolatile memory device 失效
    分闸式非易失性存储器件

    公开(公告)号:US07429766B2

    公开(公告)日:2008-09-30

    申请号:US11413640

    申请日:2006-04-28

    CPC classification number: H01L29/7881 H01L27/115 H01L27/11521 H01L29/42324

    Abstract: In a split gate type nonvolatile memory device, a supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.

    Abstract translation: 在分离栅型非易失性存储器件中,辅助层图案设置在半导体衬底的源极区域上。 由于源区域由于存在辅助层图案而垂直延伸,因此可以增加浮置栅极与源区域和辅助层图案重叠的区域的面积。 因此,形成在源极和浮置栅极之间的电容器的电容增加,使得非易失性存储器件可以在低电压电平下执行编程/擦除操作。

    Home Network System
    68.
    发明申请
    Home Network System 失效
    家庭网络系统

    公开(公告)号:US20080140797A1

    公开(公告)日:2008-06-12

    申请号:US11597289

    申请日:2005-05-27

    Abstract: The present invention discloses a home network system using an LnCP. The home network system includes one or more master devices, one or more slave devices, and a network for connecting the master devices to the slave devices on the basis of a predetermined protocol. In the home network system, the master device performs one or plural communication cycles with the plurality of slave devices at the same time at a predetermined time point, and each slave device performs one communication cycle with the master device at the time point.

    Abstract translation: 本发明公开了一种使用LnCP的家庭网络系统。 家庭网络系统包括一个或多个主设备,一个或多个从设备和用于基于预定协议将主设备连接到从设备的网络。 在家庭网络系统中,主设备在预定时间点同时与多个从设备进行一个或多个通信周期,并且每个从设备在该时间点与主设备执行一个通信周期。

    METHOD FOR TRACKING A LOST MOBILE STATION
    69.
    发明申请
    METHOD FOR TRACKING A LOST MOBILE STATION 审中-公开
    跟踪移动站的方法

    公开(公告)号:US20080003979A1

    公开(公告)日:2008-01-03

    申请号:US11768674

    申请日:2007-06-26

    Abstract: Provided is a method for tracking a lost mobile station. The method includes, when a replacement Subscriber Identity Module (SIM) card is installed, determining whether the replacement SIM card is registered as a licensed replacement SIM card; when the SIM card is not registered, transmitting a previously stored tracking short message to a preset destination; and upon receipt of a tracking response short message, setting a tracking lock mode for limiting use of some functions of the mobile station.

    Abstract translation: 提供了一种跟踪丢失的移动台的方法。 该方法包括:当安装替换用户身份模块(SIM)卡时,确定替换SIM卡是否被注册为许可替换SIM卡; 当SIM卡未被注册时,将预先存储的跟踪短消息发送到预设目的地; 并且在接收到跟踪响应短消息时,设置用于限制移动台的某些功能的使用的跟踪锁定模式。

    Electrically Erasable and Programmable Read Only Memories Including Variable Width Overlap Regions and Methods of Fabricating the Same
    70.
    发明申请
    Electrically Erasable and Programmable Read Only Memories Including Variable Width Overlap Regions and Methods of Fabricating the Same 审中-公开
    电可擦除和可编程只读存储器,包括可变宽度重叠区域及其制造方法

    公开(公告)号:US20070132005A1

    公开(公告)日:2007-06-14

    申请号:US11562223

    申请日:2006-11-21

    Abstract: An electrically erasable and programmable read only memory (EEPROM) is fabricated by forming isolation patterns defining active regions in predetermined regions of a semiconductor substrate including a memory transistor region and a selection transistor region. A gate insulating layer having tunnel regions is formed on the active regions. A first conductive layer is formed on the resultant structure having the gate insulating layer. The first conductive layer is patterned to form openings exposing top surfaces of the isolation patterns. The patterning takes place such that a distance between a selected opening and the active region adjacent the opening varies depending on the width of the isolation pattern disposed under the opening. Related EEPROM devices are also disclosed.

    Abstract translation: 通过在包括存储晶体管区域和选择晶体管区域的半导体衬底的预定区域中形成限定有源区域的隔离图案来制造电可擦除和可编程只读存储器(EEPROM)。 在有源区上形成具有隧道区的栅极绝缘层。 在具有栅极绝缘层的所得结构上形成第一导电层。 图案化第一导电层以形成露出隔离图案顶表面的开口。 进行图案化,使得所选择的开口和邻近开口的有源区域之间的距离根据设置在开口下方的隔离图案的宽度而变化。 还公开了相关的EEPROM器件。

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