Abstract:
Provided is an automatic optical power control method for an optical line terminal (OLT) of a passive optical network (PON). The automatic optical power control method includes at the OLT, measuring an allowable range of the optical power allowing a normal network operation on the PON, at the OLT, setting an optimum optical signal level within the measured allowable range of the optical power, and at the OLT, adjusting a power level of a transmitter to the set optimum optical signal level. Accordingly, an appropriate power level can be selected depending on an optical distribution network (ODN) structure to drive the transmitter. Also, when the entire optical network units are deactivated, a laser of the transmitter is turned off to thereby minimize unnecessary power consumption at the OLT.
Abstract:
A bonding pad having an anti-pad peeling-off structure is disclosed. In a method of forming the bonding pad, after a metal pad layer is formed, a slit is formed in the metal pad layer. A protecting layer is formed on the metal pad layer. The protecting layer is partially removed to expose the metal pad such that a portion of the protecting layer remains in the slits to be connected to the main protecting layer. The protecting layer formed in the slit is connected to the protecting layer such that the residual protecting layer pattern buffer when physical impacts are generated, to prevent peeling-off of the metal pad layer.
Abstract:
a nonvolatile memory device Includes an active region defined in a semiconductor substrate and a control gate electrode crossing over the active region. A gate insulating layer is interposed between the control gate electrode and the active reigon. A floating gate is formed in the active region to penetrate the control gate electrode and extend to a predetermined depth into the semiconductor substrate. A tunnel insulating layer is successively interposed between the control gate electrode and the floating gate, and between the semiconductor substrate and the floating gate. The floating gate may be formed after a trench is formed by sequentially etching a control gate conductive layer and the semiconductor substrate, and a tunnel insulating layer is formed on the trench and sidewalls of the control gate conductive layer. The floating gate is formed in the trench to extend into a predetermined depth into the semiconductor substrate.
Abstract:
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.
Abstract:
The present invention discloses a data processing method for application layer based on a living network control protocol. The data processing method for application layer which is based on a predetermined protocol composed of at least a lower layer and an application layer includes the steps of: receiving a predetermined primitive from an upper application software; generating a communication cycle identifier (CycleID) according to the primitive; generating a service description according to the primitive and the communication cycle identifier (CycleID); composing an application layer protocol data unit (APDU) including the primitive; and transmitting the APDU to the lower layer.
Abstract:
The present invention discloses a home network system using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least one electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, wherein the protocol includes an application layer, a network layer, a data link layer and a physical layer, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code form network security when accessing the dependent transmission medium; and wherein an application layer protocol data unit (APDU) is transmitted between the application layer and the network layer, a network layer protocol data unit (NPDU) is transmitted between the network layer and the data link layer and the between the network layer and the home code control sub-layer, a home code control sub-layer protocol data unit (HCNPDU) is transmitted between the home code control sub-layer and the data link layer, and a data frame unit is transmitted between the data link layer and the physical layer.
Abstract:
In a split gate type nonvolatile memory device, a supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.
Abstract:
The present invention discloses a home network system using an LnCP. The home network system includes one or more master devices, one or more slave devices, and a network for connecting the master devices to the slave devices on the basis of a predetermined protocol. In the home network system, the master device performs one or plural communication cycles with the plurality of slave devices at the same time at a predetermined time point, and each slave device performs one communication cycle with the master device at the time point.
Abstract:
Provided is a method for tracking a lost mobile station. The method includes, when a replacement Subscriber Identity Module (SIM) card is installed, determining whether the replacement SIM card is registered as a licensed replacement SIM card; when the SIM card is not registered, transmitting a previously stored tracking short message to a preset destination; and upon receipt of a tracking response short message, setting a tracking lock mode for limiting use of some functions of the mobile station.
Abstract:
An electrically erasable and programmable read only memory (EEPROM) is fabricated by forming isolation patterns defining active regions in predetermined regions of a semiconductor substrate including a memory transistor region and a selection transistor region. A gate insulating layer having tunnel regions is formed on the active regions. A first conductive layer is formed on the resultant structure having the gate insulating layer. The first conductive layer is patterned to form openings exposing top surfaces of the isolation patterns. The patterning takes place such that a distance between a selected opening and the active region adjacent the opening varies depending on the width of the isolation pattern disposed under the opening. Related EEPROM devices are also disclosed.